60CPU04-F3 [VISHAY]
Ultrafast Rectifier, 2 x 30 A FRED Pt; 超快整流器， 2× 30 A FRED铂
| 型号： | 60CPU04-F3 |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast Rectifier, 2 x 30 A FRED Pt |
| 文件： | 总8页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 30 A FRED Pt®
FEATURES
• Low forward voltage drop
Base
common
cathode
2
• 175 °C operating junction temperature
• Ultrafast recovery time
• Low leakage current
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
1
3
DESCRIPTION/APPLICATIONS
Anode
1
Anode
2
TO-247AC
2
VS-60CPU04-F3 series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
Common
cathode
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
Package
TO-247AC
2 x 30 A
400 V
IF(AV)
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, dc-to-dc converters as well
as freewheeling diodes in low voltage inverters, and
chopper motor drives.
VR
VF at IF
1.30 V
t
rr (typical)
37 ns
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
TJ maximum
175 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
400
30
V
per leg
Average rectified forward current
per device
IF(AV)
Rated VR, TC = 134 °C
60
A
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
IFSM
IFM
TJ = 25 °C
300
Rated VR, square wave, 20 kHz, TC = 134 °C
60
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 30 A
400
-
-
-
-
-
-
-
-
-
-
1.10
0.92
1.25
1.10
-
1.30
1.10
1.6
1.4
10
V
IF = 30 A, TJ = 150 °C
IF = 60 A
Forward voltage
VF
IF = 60 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
IR
μA
TJ = 150 °C, VR = VR rated
VR = 400 V
-
100
-
Junction capacitance
Series inductance
CT
LS
40
pF
nH
Measured lead to lead 5 mm from package body
12
-
Document Number: 93189
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier,
2 x 30 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
37
40
-
46
Reverse recovery time
trr
ns
65
-
TJ = 125 °C
119
6.4
-
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 25 °C
-
Peak recovery current
IRRM
A
TJ = 125 °C
14.7
206
874
-
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
0.6
-
1.0
40
-
Thermal resistance,
junction to ambient per leg
Typical socket mount
Mounting surface, flat, smooth and greased
°C/W
Thermal resistance,
case to heatsink
0.5
-
-
6
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC
60CPU04
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93189
Revision: 17-Sep-10
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier,
2 x 30 A FRED Pt®
1000
100
10
1000
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 175 °C
1
TJ = 75 °C
TJ = 125 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
TJ = 25 °C
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
50
100
150
200
250
300
350
400
VF - Forward Voltage Drop (V)
93189_01
93189_02
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
10
0
50
100
150
200
250
300
93189_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
93189_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93189
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier,
2 x 30 A FRED Pt®
180
1000
160
140
120
100
DC
IF = 30 A, TJ = 125 °C
100
IF = 30 A, TJ = 25 °C
Square wave (D = 0.50)
Rated VR applied
See note (1)
10
100
0
5
10 15 20 25 30 35 40 45
1000
IF(AV) - Average Forward Current (A)
93189_05
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
93189_07
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
60
10 000
50
40
30
20
10
0
IF = 30 A, TJ = 125 °C
RMS limit
1000
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
IF = 30 A, TJ = 25 °C
100
100
0
5
10 15 20 25 30 35 40 45
1000
93189_06
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
93189_08
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93189
Revision: 17-Sep-10
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier,
2 x 30 A FRED Pt®
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93189
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VS-60CPU04-F3
Vishay Semiconductors
Ultrafast Rectifier,
2 x 30 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
U
04 -F3
1
2
3
4
5
6
7
1
-
-
-
-
-
-
-
HPP product suffix
Current rating (60 = 60 A)
2
3
4
5
6
7
Circuit configuration: C = Common cathode
P = TO-247AC
U = Ultrafast rectifier
Voltage rating (04 = 400 V)
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CPU04-F3
25
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
Part marking information
SPICE model
www.vishay.com/doc?95007
www.vishay.com/doc?95398
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93189
Revision: 17-Sep-10
Outline Dimensions
Vishay Semiconductors
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DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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