2N5199-E3 [VISHAY]
Small Signal Field-Effect Transistor, N-Channel, Junction FET;
| 型号： | 2N5199-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, N-Channel, Junction FET |
| 文件： | 总7页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) ꢀ VGS1 – VGS2ꢀ Max (mV)
2N5196
2N5197
2N5198
2N5199
–0.7 to –4
–0.7 to –4
–0.7 to –4
–0.7 to –4
–50
–50
–50
–50
1
1
1
1
–15
–15
–15
–15
5
5
10
15
FEATURES
BENEFITS
APPLICATIONS
D Monolithic Design
D High Slew Rate
D Tight Differential Match vs. Current
D Wideband Differential Amps
D Improved Op Amp Speed, Settling Time
D High-Speed, Temp-Compensated,
Accuracy
Single-Ended Input Amps
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D High Speed Comparators
D Impedance Converters
D High CMRR: 100 dB
D Minimum Error with Large Input Signal
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
S
G
2
1
1
3
6
4
D
1
D
2
2
5
G
1
S
2
Top View
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation :
Notes
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-1
2N5196/5197/5198/5199
Vishay Siliconix
SPECIFICATIONS FOR 2N5196 AND 2N5197 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N5196
2N5197
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= –1 mA, V = 0 V
–57
–2
–50
–0.7
0.7
–50
–0.7
0.7
(BR)GSS
G
DS
V
V
V
= 20 V, I = 1 nA
DS D
–4
7
–4
7
GS(off)
b
Saturation Drain Current
I
V
= 20 V, V = 0 V
DS GS
3
mA
pA
nA
pA
nA
V
DSS
V
= –30 V, V = 0 V
–10
–20
–5
–25
–50
–15
–15
–3.8
–25
–50
–15
–15
–3.8
GS
DG
DG
DS
Gate Reverse Current
Gate Operating Current
I
GSS
T
= 150_C
A
V
V
= 20 V, I = 200 mA
D
I
G
T
= 125_C
–0.8
–1.5
A
Gate-Source Voltage
V
= 20 V, I = 200 mA
–0.2
–0.2
GS
D
Dynamic
Common-Source
Forward Transconductance
g
2.5
2
1
4
1
4
mS
fs
V
= 20 V, V = 0 V
GS
f = 1 kHz
DS
Common-Source
Output Conductance
g
os
50
50
mS
Common-Source
Forward Transconductance
g
0.8
1
0.7
1.6
4
0.7
1.6
4
mS
fs
V
= 20 V, I = 200 mA
f = 1 kHz
DS
D
Common-Source
Output Conductance
g
mS
os
iss
rss
Common-Source
Input Capacitance
C
3
6
6
V
= 20 V, V = 0 V
GS
DS
pF
f = 1 MHz
Common-Source
Reverse Transfer Capacitance
C
1
2
2
nV⁄
√Hz
Equivalent Input Noise Voltage
Noise Figure
e
V
= 20 V, V = 0 V, f = 1 kHz
9
20
0.5
20
0.5
n
DS
GS
V
= 20 V, V = 0 V
GS
DS
NF
dB
f = 100 Hz, R = 10 MW
G
Matching
|
|
Differential Gate-Source Voltage
V
–V
V
= 20 V, I = 200 mA
5
5
5
mV
DG
D
GS1 GS2
|
|
D V
–V
Gate-Source Voltage Differential
Change with Temperature
V
= 20 V, I = 200 mA
DG
D
GS1 GS2
10
mV/_C
T
= –55 to 125_C
A
DT
I
DSS1
Saturation Drain Current Ratio
V
= 20 V, V = 0 V
0.98
0.95
0.97
1
0.95
0.97
1
DS
GS
I
DSS2
g
fs1
Transconductance Ratio
0.99
0.1
1
1
5
1
1
5
g
fs2
V
= 20 V, I = 200 mA
DS
D
f = 1 kHz
Differential Output Conductance
Differential Gate Current
mS
|
|
g
–g
os1 os2
V
= 20 V, I = 200 mA , T = 125_C
0.1
nA
dB
|
|
DG
D
A
I
–I
G1 G2
c
Common Mode Rejection Ratio
CMRR
V
= 10 to 20 V, I = 200 mA
100
DG
D
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-2
2N5196/5197/5198/5199
Vishay Siliconix
SPECIFICATIONS FOR 2N5198 AND 2N5199 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N5198
2N5199
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= –1 mA, V = 0 V
–57
–2
–50
–0.7
0.7
–50
–0.7
0.7
(BR)GSS
G
DS
V
V
V
= 20 V, I = 1 nA
DS D
–4
7
–4
7
GS(off)
b
Saturation Drain Current
I
V
= 20 V, V = 0 V
DS GS
3
mA
pA
nA
pA
nA
V
DSS
V
= –30 V, V = 0 V
–10
–20
–5
–25
–50
–15
–15
–3.8
–25
–50
–15
–15
–3.8
GS
DG
DG
DS
Gate Reverse Current
Gate Operating Current
I
GSS
T
= 150_C
A
V
V
= 20 V, I = 200 mA
D
I
G
T
=125_C
–0.8
–1.5
A
Gate-Source Voltage
V
= 20 V, I = 200 mA
–0.2
–0.2
GS
D
Dynamic
Common-Source
Forward Transconductance
g
2.5
2
1
4
1
4
mS
fs
V
= 20 V, V = 0 V, f = 1 kHz
GS
DS
Common-Source
Output Conductance
g
os
50
50
mS
Common-Source
Forward Transconductance
g
fs
0.8
0.7
1.6
0.7
1.6
mS
V
= 20 V, I = 200 mA
DS
D
f = 1 kHz
Common-Source
Output Conductance
g
1
3
1
4
6
2
4
6
2
mS
os
Common-Source Input Capacitance
C
iss
rss
V
= 20 V, V = 0 V, f = 1 MHz
pF
Common-Source
Reverse Transfer Capacitance
DS
GS
C
nV⁄
√Hz
Equivalent Input Noise Voltage
Noise Figure
e
V
= 20 V, V = 0 V, f = 1 kHz
9
20
20
n
DS
GS
V
= 20 V, V = 0 V
GS
DS
NF
0.5
0.5
dB
f = 100 Hz, R = 10 MW
G
Matching
|
|
Differential Gate-Source Voltage
V
–V
V
V
= 20 V, I = 200 mA
10
20
15
40
mV
DG
D
GS1 GS2
|
|
D V
–V
Gate-Source Voltage Differential
Change with Temperature
= 20 V, I = 200 mA
DG
T
D
GS1 GS2
mV/_C
= –55 to 125_C
A
DT
I
DSS1
Saturation Drain Current Ratio
V
= 20 V, V = 0 V
0.97
0.95
0.95
1
0.95
0.95
1
DS
GS
I
DSS2
g
fs1
Transconductance Ratio
0.97
0.2
1
1
5
1
1
5
g
fs2
V
= 20 V, I = 200 mA
DS
D
f = 1 kHz
Differential Output Conductance
Differential Gate Current
mS
|
|
g
–g
os1 os2
V
= 20 V, I = 200 mA , T = 125_C
0.1
97
nA
dB
|
|
DG
D
A
I
–I
G1 G2
c
Common Mode Rejection Ratio
CMRR
V
= 10 to 20 V, I = 200 mA
DG D
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NQP
c. This parameter not registered with JEDEC.
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-3
2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
3
100 nA
10 nA
1 nA
5
4
IG @ ID = 200 mA
2.6
2.2
1.8
IDSS
T
A
= 125_C
g
fs
3
2
1
0
IGSS @ 125_C
50 mA
100 pA
50 mA
200 mA
10 pA
1 pA
IGSS @ 25_C
T
A
= 25_C
IDSS @ VDS = 15 V, VGS = 0 V
@ VDG = 15 V, VGS = 0 V
f = 1 kHz
1.4
1
g
fs
0.1 pA
0
–1
–2
–3
–4
–5
0
10
20
30
40
50
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
Output Characteristics
Output Characteristics
5
5
VGS(off) = –3 V
VGS = 0 V
VGS(off) = –2 V
–0.3 V
4
3
2
1
0
4
3
2
1
0
–0.6 V
VGS = 0 V
–0.9 V
–1.2 V
–0.2 V
–0.4 V
–0.6 V
–1.5 V
–0.8 V
–1.0 V
–1.2 V
–1.8 V
–2.1 V
–1.4 V
–2.4 V
0
4
8
12
16
20
0
4
8
12
16
20
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2
2.5
VGS = 0 V
VGS(off) = –2 V
VGS(off) = –3 V
–0.3 V
VGS = 0 V
–0.2 V
–0.4 V
1.6
1.2
0.8
0.4
0
2.0
1.5
1.0
0.5
0
–0.6 V
–0.9 V
–0.6 V
–0.8 V
–1.2 V
–1.5 V
–1.8 V
–1.0 V
–1.2 V
–1.4 V
–2.1 V
–2.4 V
–1.6 V
0.8
0
0.2
0.4
0.6
1
0
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-4
2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Gate-Source Differential Voltage
vs. Drain Current
Transfer Characteristics
5
100
10
1
VDG = 20 V
VGS(off) = –2 V
VDS = 20 V
T
= 25_C
A
4
T
A
= –55_C
3
2
2N5199
2N5196
25_C
125_C
1
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
0.01
0.1
ID – Drain Current (mA)
1
VGS – Gate-Source Voltage (V)
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
100
130
120
110
100
90
VDG = 20 V
DVDG
DT = 25 to 125_C
A
CMRR = 20 log
DT = –55 to 25_C
A
D
V
V
GS2
–
GS1
2N5199
2N5196
10
DVDG = 10 – 20 V
5 – 10 V
80
1
0.01
0.1
1
0.01
0.1
ID – Drain Current (mA)
1
I
D – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
100
1 k
80
60
40
800
600
400
VGS(off) = –3 V
VGS(off) = –2 V
VGS(off) = –3 V
VGS(off) = –2 V
g
R
L
fs
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, VDS = 5 V
20
0
200
0
10 V
R
+
L
I
D
0.01
0.1
1
0.01
0.1
1
I
D
– Drain Current (mA)
ID – Drain Current (mA)
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-5
2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
5
f = 1 MHz
f = 1 MHz
8
6
4
2
0
4
3
2
1
0
VDS = 0 V
5 V
VDS = 0 V
5 V
15 V
15 V
20 V
20 V
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
16
2.5
2.0
1.5
1.0
0.5
0
VGS(off) = –2 V
VDS = 20 V
f = 1 kHz
VDS = 20 V
T
A
= –55_C
ID @ 200 mA
12
8
25_C
VGS = 0 V
4
0
125_C
10
100
1 k
10 k
100 k
0.01
0.1
1
f – Frequency (Hz)
ID – Drain Current (mA)
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
2.5
2.0
1.5
1.0
1 k
10
VGS(off) = –2 V
VDS = 20 V
f = 1 kHz
g
os
800
8
6
T
A
= –55_C
600
400
25_C
4
2
0
r
DS
200
0
0.5
0
125_C
rDS @ I = 100 mA, VGS = 0 V
D
g
os
@ VDS = 20 V, VGS = 0 V, f = 1 kHz
–1
–2
–3
–4
–5
0.01
0.1
ID – Drain Current (mA)
1
0
VGS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-6
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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