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元器件品牌
2N520
[ETC]
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | TO-5 ; 晶体管| BJT | PNP | 12V V（ BR ） CEO | TO- 5
元器件型号：
2N520
生产厂家：
ETC
描述和应用：
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | TO-5
晶体管| BJT | PNP | 12V V（ BR ） CEO | TO- 5
晶体 晶体管
PDF文件：
总4页 (文件大小：337K)
下载文档：
下载PDF数据表文档文件
型号参数：2N520参数
查看货源
2N5200
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46
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47
ETC
2N5202
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
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30
GESS
2N5202
HIGH-SPEED, SILICON N-P-N
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13
NJSEMI
2N5202
Transistor
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0
ASI
2N5202PBFREE
Power Bipolar Transistor,
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0
CENTRAL
2N5204
MAXIMUM ALLOWABLE RATINGS
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18
NJSEMI
2N5204
25 and 35 Amp RMS SCRs
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37
KNOX
2N5204
25 and 35 Amp RMS SCRs
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20
IRF
2N5204
25 AND 35 AMP RMS SCRS
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IRF
2N5204
25 and 35 Amp RMS SCRs
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14
IRF
2N5204M
SILICON CONTROLLED RECTIFIER,600V V(DRM),22A I(T),TO-208VARM6
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STMICROELECTR
2N5204M
Silicon Controlled Rectifier, 35A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-208AA
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0
VISHAY
2N5204M
SILICON CONTROLLED RECTIFIER,600V V(DRM),22A I(T),TO-208VARM6
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0
STMICROELECTR
2N5204M
Silicon Controlled Rectifier, 35A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-208AA
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IRF
2N5204MPBF
Silicon Controlled Rectifier, 35A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-208AA
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0
VISHAY
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