2N3819 [VISHAY]
N-Channel JFET; N沟道JFET
| 型号： | 2N3819 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel JFET |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3819
Vishay Siliconix
N-Channel JFET
PRODUCT SUMMARY
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
v –8
–25
2
2
FEATURES
BENEFITS
APPLICATIONS
D Excellent High-Frequency Gain:
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
Gps 11 dB @ 400 MHz
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D Very Low Noise: 3 dB @ 400 MHz
D Sample-and-Hold
D Very Low Distortion
D Very Low Capacitance Switches
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
TO-226AA
(TO-92)
1
S
G
D
2
3
Top View
ABSOLUTE MAXIMUM RATINGS
1
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-1
2N3819
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
Typa
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= –1 mA , V = 0 V
–25
–35
–3
(BR)GSS
G
DS
V
V
V
= 15 V, I = 2 nA
–8
20
–2
–2
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
2
10
–0.002
–0.002
–20
mA
nA
mA
DSS
DS
GS
V
= –15 V, V = 0 V
DS
GS
Gate Reverse Current
I
GSS
T
A
= 100_C
c
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
DG D
pA
Drain Cutoff Current
I
V
= 10 V, V = –8 V
2
D(off)
DS
GS
Drain-Source On-Resistance
Gate-Source Voltage
r
V
= 0 V, I = 1 mA
150
W
DS(on)
GS
D
V
V
= 15 V, I = 200 mA
–0.5
–2.5
0.7
–7.5
GS
DS
D
V
Gate-Source Forward Voltage
V
I = 1 mA , V = 0 V
G DS
GS(F)
Dynamic
f = 1 kHz
f = 100 MHz
f = 1 kHz
2
5.5
5.5
25
6.5
c
Common-Source Forward Transconductance
g
mS
fs
V
V
= 15 V
DS
1.6
= 0 V
GS
c
Common-Source Output Conductance
g
os
50
8
mS
Common-Source Input Capacitance
C
2.2
0.7
iss
rss
V
V
= 15 V, V = 0 V, f = 1 MHz
pF
DS
DS
GS
Common-Source Reverse Transfer Capacitance
C
4
nV⁄
√Hz
c
Equivalent Input Noise Voltage
e
= 10 V, V = 0 V, f = 100 Hz
6
n
GS
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.
NH
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
20
10
500
100
rDS @ I
1 mA, V = 0 V
GS
D =
g
@ VDS = 10 V, VGS = 0 V
os
IDSS
f = 1 kHz
8
6
4
80
60
40
16
12
400
300
rDS
g
fs
g
os
8
4
0
200
100
0
IDSS @ VDS = 15 V, VGS = 0 V
@ VDS = 15 V, VGS = 0 V
f = 1 kHz
2
0
20
0
g
fs
0
–2
–4
–6
–8
–10
0
–2
–4
–6
–8
–10
V
– Gate-Source Cutoff Voltage (V)
V
– Gate-Source Cutoff Voltage (V)
GS(off)
GS(off)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-2
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Forward Transconductance
vs. Drain Current
Gate Leakage Current
100 nA
10
5 mA
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
1 mA
10 nA
1 nA
8
0.1 mA
T
= 125_C
A
T
A
= –55_C
125_C
6
IGSS
125_C
@
100 pA
25_C
5 mA
4
1 mA
0.1 mA
10 pA
1 pA
T
A
= 25_C
2
0
IGSS @ 25_C
0.1 pA
0
0
0
10
20
10
–2
0.1
1
10
10
–3
VDG – Drain-Gate Voltage (V)
I – Drain Current (mA)
D
Output Characteristics
Output Characteristics
10
8
15
12
VGS(off) = –2 V
VGS(off) = –3 V
V
= 0 V
V
= 0 V
GS
GS
–0.3 V
6
4
9
6
–0.2 V
–0.4 V
–0.6 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–0.8 V
–1.0 V
–1.2 V
2
0
3
0
–1.8 V
–1.4 V
2
4
6
8
0
2
4
6
8
V
– Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
DS
Transfer Characteristics
Transfer Characteristics
10
8
10
8
VGS(off) = –2 V
VDS = 10 V
VGS(off) = –3 V
VDS = 10 V
T
A
= –55_C
T
A
= –55_C
25_C
25_C
6
4
6
4
125_C
125_C
2
0
2
0
–0.4
–0.8
–1.2
–1.6
0
–0.6
–1.2
–1.8
–2.4
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-3
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltgage
10
10
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
8
8
T
A
= –55_C
125_C
T
= –55_C
A
6
4
2
0
6
4
2
0
25_C
25_C
125_C
0
–0.4
–0.8
–1.2
–1.6
–2
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
300
240
180
T
A
= –55_C
g
R
L
fs
A
+
V
1 ) R g
os
L
80
60
Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = –2 V
R
+
I
L
D
–3 V
VGS(off) = –2 V
120
60
0
40
20
0
–3 V
0.1
1
10
0.1
1
10
ID – Drain Current (mA)
I
D
– Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
4
3.0
2.4
f = 1 MHz
f = 1 MHz
VDS = 0 V
3
2
1
0
1.8
1.2
0.6
0
VDS = 0 V
VDS = 10 V
VDS = 10 V
0
–20
0
–4
–8
–12
–16
–20
–4
–8
–12
–16
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-4
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Input Admittance
Forward Admittance
100
100
T
= 25_C
T
= 25_C
A
A
VDS = 15 V
VGS = 0 V
VDS = 15 V
VGS = 0 V
Common Source
Common Source
b
is
10
10
g
g
is
fs
–b
is
1
1
0.1
0.1
100
200
500
1000
100
200
500
1000
1000
10
f – Frequency (MHz)
f – Frequency (MHz)
Reverse Admittance
Output Admittance
10
1
10
T
= 25_C
T
= 25_C
A
A
VDS = 15 V
VGS = 0 V
VDS = 15 V
VGS = 0 V
b
os
–b
rs
Common Source
Common Source
1
g
os
–g
rs
0.1
0.1
0.01
0.01
100
200
500
1000
100
200
500
f – Frequency (MHz)
f – Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
16
20
16
VGS(off) = –3 V
VDS = 10 V
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
T
A
= –55_C
12
8
12
8
25_C
125_C
I
= 5 mA
D
4
4
ID = IDSS
0
0
0.1
10
100
1 k
f – Frequency (Hz)
10 k
100 k
1
ID – Drain Current (mA)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-5
相关型号：
2N3819-STYLE-H
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92
ALLEGRO
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