2N3819/D [ETC]

JFET VHF/UHF Amplifier ; JFET VHF / UHF放大器\n
2N3819/D
型号: 2N3819/D
厂家: ETC    ETC
描述:

JFET VHF/UHF Amplifier
JFET VHF / UHF放大器\n

放大器
文件: 总8页 (文件大小:174K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N3819  
JFET VHF/UHF Amplifier  
N–Channel – Depletion  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Drain–Source Voltage  
Drain–Gate Voltage  
Gate–Source Voltage  
Drain Current  
Symbol  
Value  
25  
Unit  
Vdc  
V
DS  
DG  
GS  
3 DRAIN  
V
V
25  
Vdc  
25  
Vdc  
2
I
D
100  
10  
mAdc  
mAdc  
GATE  
Forward Gate Current  
Total Device Dissipation  
I
G(f)  
P
D
1 SOURCE  
@ T = 25°C  
Derate above 25°C  
350  
2.8  
mW  
mW/°C  
A
Storage Channel Temperature Range  
T
stg  
–65 to +150  
°C  
1
2
3
TO–92  
CASE 29  
STYLE 22  
MARKING DIAGRAM  
2N  
3819  
YWW  
2N3819 = Device Code  
Y
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
2N3819  
Package  
Shipping  
5000 Units/Box  
TO–92  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
March, 2002 – Rev. 0  
2N3819/D  
2N3819  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate–Source Breakdown Voltage  
V
25  
0.5  
Vdc  
Vdc  
(BR)GSS  
(I = 1.0 µAdc, V = 0)  
G
DS  
Gate–Source  
V
GS  
7.5  
(V = 15 Vdc, I = 200 µAdc)  
DS  
D
Gate–Source Cutoff Voltage  
(V = 15 Vdc, I = 10 nAdc)  
V
ā8.0  
210  
Vdc  
GS(off)  
DS  
D
Gate Reverse Current  
(V = 15 Vdc, V = 0)  
I
nAdc  
GSS  
GS  
DS  
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
I
2.0  
20  
mAdc  
DSS  
(V = 15 Vdc, V = 0)  
DS  
GS  
SMALL–SIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
Output Admittance  
(V = 15 Vdc, V = 0, f = 1.0 kHz)  
Y
fs  
3.0  
6.5  
mmhos  
mmhos  
mmhos  
mmhos  
pF  
DS  
GS  
(V = 15 Vdc, V = 0, f = 1.0 kHz)  
Y
os  
40  
DS  
GS  
Forward Transfer Admittance  
Reverse Transfer Admittance  
Input Capacitance  
(V = 15 Vdc, V = 0, f = 200 MHz)  
Y
5.6  
1.0  
3.0  
0.7  
0.9  
700  
DS  
GS  
fs  
rs  
(V = 15 Vdc, V = 0, f = 200 MHz)  
Y
DS  
GS  
(V = 20 Vdc, –V = 1.0 Vdc)  
C
DS  
GS  
iss  
rss  
oss  
Reverse Transfer Capacitance  
Output Capacitance  
(V = 20 Vdc, –V = 1.0 Vdc, f = 1.0 MHz)  
C
pF  
DS  
GS  
(V = 20 Vdc, –V = 1.0 Vdc, f = 1.0 MHz)  
DS  
C
pF  
GS  
Cut–off Frequency (Note 1)  
(V = 15 Vdc, V = 0)  
F
(Yfs)  
MHz  
DS  
GS  
1. The frequency at which g is 0.7 of its value at 1 kHz.  
fs  
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2
2N3819  
COMMON SOURCE CHARACTERISTICS  
ADMITTANCE PARAMETERS  
(VDS = 15 Vdc, Tchannel = 25°C)  
30  
20  
5.0  
3.0  
2.0  
b
@ I  
DSS  
10  
7.0  
5.0  
is  
b
rs  
@ I  
DSS  
1.0  
0.7  
0.5  
0.25 I  
DSS  
3.0  
2.0  
g
is  
@ I  
DSS  
0.3  
0.2  
g
is  
@ 0.25 I  
DSS  
1.0  
0.7  
0.5  
0.1  
g
rs  
@ I , 0.25 I  
DSS  
DSS  
b
is  
@ 0.25 I  
DSS  
0.07  
0.05  
0.3  
10  
20 30  
50 70 100  
200 300  
1000  
10  
20 30  
50 70 100  
200 300  
1000  
500 700  
500 700  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 1. Input Admittance (yis)  
Figure 2. Reverse Transfer Admittance (yrs)  
20  
10  
10  
5.0  
b
os  
@ I and 0.25 I  
DSS DSS  
7.0  
5.0  
2.0  
1.0  
g
fs  
@ I  
DSS  
g
fs  
@ 0.25 I  
DSS  
3.0  
2.0  
0.5  
0.2  
0.1  
g
@ I  
DSS  
os  
1.0  
0.7  
0.5  
|b | @ I  
fs  
DSS  
0.05  
|b | @ 0.25 I  
fs  
DSS  
g
@ 0.25 I  
DSS  
os  
0.02  
0.01  
0.3  
0.2  
10  
20 30  
50 70 100  
200 300  
1000  
10  
20 30  
50 70 100  
200 300  
1000  
500 700  
500 700  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 3. Forward Transadmittance (yfs)  
Figure 4. Output Admittance (yos)  
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3
2N3819  
COMMON SOURCE CHARACTERISTICS  
S–PARAMETERS  
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)  
30°  
20°  
10°  
0°  
350°  
340°  
330°  
30°  
20°  
10°  
0°  
350°  
340°  
330°  
I
= 0.25 I  
100  
D
DSS  
1.0  
40°  
50°  
40°  
50°  
0.4  
320°  
310°  
32  
31  
200  
300  
100  
200  
0.9  
0.8  
0.7  
0.6  
0.3  
400  
500  
600  
700  
800  
I
D
= I , 0.25 I  
DSS  
DSS  
800  
300  
900  
700  
500  
0.2  
0.1  
I
D
= I  
DSS  
60°  
70°  
300°  
290°  
60°  
70°  
30  
29  
400  
500  
600  
400  
300  
200  
600  
80°  
90°  
280°  
270°  
260°  
80°  
90°  
28  
27  
26  
0.0  
700  
800  
900  
900  
100  
100°  
100°  
110°  
120°  
250°  
240°  
110°  
120°  
25  
24  
130°  
140°  
230°  
220°  
130°  
140°  
23  
22  
150°  
30°  
160°  
20°  
170°  
180°  
190°  
200°  
210°  
330°  
150°  
30°  
160°  
20°  
170°  
180°  
190°  
200°  
340°  
210°  
330°  
Figure 5. S11s  
Figure 6. S12s  
10°  
0°  
350°  
340°  
10°  
0°  
100  
1.0  
100  
350°  
200  
I
D
= 0.25 I  
DSS  
300  
40°  
50°  
40°  
50°  
320°  
310°  
32  
31  
400  
500  
600  
700  
800  
200  
300  
400  
500  
600  
0.9  
0.6  
0.5  
0.4  
0.3  
I
D
= I  
DSS  
700  
800  
900  
900  
0.8  
0.7  
0.6  
60°  
70°  
300°  
290°  
60°  
70°  
30  
29  
900  
800  
800  
900  
80°  
90°  
280°  
270°  
260°  
80°  
90°  
28  
27  
26  
700  
600  
500  
400  
I
D
= 0.25 I  
DSS  
700  
600  
500  
400  
0.3  
0.4  
0.5  
0.6  
100°  
100°  
100  
110°  
120°  
300  
250°  
240°  
110°  
120°  
25  
24  
200  
100  
300  
I
D
= I  
DSS  
200  
130°  
140°  
230°  
220°  
130°  
140°  
23  
22  
150°  
160°  
170°  
180°  
190°  
200°  
210°  
150°  
160°  
170°  
180°  
190°  
200°  
210°  
Figure 7. S21s  
Figure 8. S22s  
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4
2N3819  
COMMON GATE CHARACTERISTICS  
ADMITTANCE PARAMETERS  
(VDG = 15 Vdc, Tchannel = 25°C)  
0.5  
20  
0.3  
0.2  
10  
7.0  
5.0  
b
rg  
@ I  
DSS  
g
@ I  
DSS  
ig  
0.1  
0.07  
0.05  
3.0  
2.0  
g
rg  
@ 0.25 I  
DSS  
0.25 I  
DSS  
0.03  
0.02  
1.0  
0.7  
0.5  
b
ig  
@ I  
DSS  
0.01  
b
ig  
@ 0.25 I  
DSS  
g
ig  
@ I , 0.25 I  
DSS  
DSS  
0.3  
0.2  
0.007  
0.005  
10  
20 30  
50 70 100  
200 300  
1000  
10  
20 30  
50 70 100  
200 300  
1000  
500 700  
500 700  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 9. Input Admittance (yig)  
Figure 10. Reverse Transfer Admittance (yrg)  
10  
1.0  
0.7  
0.5  
g
fg  
@ I  
DSS  
b
og  
@ I , 0.25 I  
DSS DSS  
7.0  
5.0  
3.0  
2.0  
g
fg  
@ 0.25 I  
0.3  
0.2  
DSS  
1.0  
0.1  
0.7  
0.5  
0.07  
0.05  
g
og  
@ I  
DSS  
b
fg  
@ I  
DSS  
0.3  
0.2  
0.03  
0.02  
b
rg  
@ 0.25 I  
DSS  
g
og  
@ 0.25 I  
DSS  
0.1  
0.01  
10  
20 30  
50 70 100  
200 300  
1000  
10  
20 30  
50 70 100  
200 300  
1000  
500 700  
500 700  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 11. Forward Transfer Admittance (yfg)  
Figure 12. Output Admittance (yog)  
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5
2N3819  
COMMON GATE CHARACTERISTICS  
S–PARAMETERS  
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)  
30°  
20°  
10°  
0°  
350°  
340°  
330°  
30°  
20°  
10°  
0°  
350°  
340°  
330°  
0.7  
40°  
50°  
40°  
50°  
320°  
310°  
0.04  
32  
31  
I
= 0.25 I  
DSS  
D
100  
200  
200  
300  
0.6  
100  
0.03  
0.02  
0.01  
0.0  
400  
500  
600  
700  
300  
DSS  
0.5  
400  
500  
600  
60°  
70°  
300°  
290°  
60°  
70°  
30  
29  
800  
900  
I
= I  
D
0.4  
0.3  
700  
80°  
90°  
280°  
270°  
260°  
80°  
90°  
28  
27  
26  
800  
900  
100  
500  
600  
600  
100°  
100°  
I
D
= 0.25 I  
DSS  
I
D
= I  
DSS  
700  
110°  
120°  
250°  
240°  
110°  
120°  
25  
24  
0.01  
700  
800  
800  
0.02  
0.03  
900  
130°  
140°  
230°  
220°  
130°  
140°  
23  
22  
900  
0.04  
150°  
30°  
160°  
20°  
170°  
180°  
190°  
200°  
210°  
150°  
30°  
160°  
20°  
170°  
180°  
190°  
200°  
210°  
330°  
Figure 13. S11g  
Figure 14. S12g  
10°  
0°  
350°  
340°  
330°  
10°  
0°  
1.5  
1.0  
350°  
300  
340°  
500  
0.5  
40°  
50°  
40°  
50°  
320°  
310°  
32  
31  
200  
400  
700  
100  
600  
100  
800  
900  
0.4  
0.9  
0.8  
0.7  
0.6  
I
D
= I  
DSS  
I
D
= I , 0.25 I  
DSS  
100  
DSS  
0.3  
0.2  
60°  
70°  
300°  
290°  
60°  
70°  
30  
29  
I
D
= 0.25 I  
DSS  
80°  
90°  
280°  
270°  
260°  
80°  
90°  
28  
27  
26  
0.1  
900  
900  
100°  
100°  
110°  
120°  
250°  
240°  
110°  
120°  
25  
24  
130°  
140°  
230°  
220°  
130°  
140°  
23  
22  
150°  
160°  
170°  
180°  
190°  
200°  
210°  
150°  
160°  
170°  
180°  
190°  
200°  
210°  
Figure 15. S21g  
Figure 16. S22g  
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6
2N3819  
PACKAGE DIMENSIONS  
TO–92 (TO–226)  
CASE 29–11  
ISSUE AL  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
C
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
SECTION X–X  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
STYLE 22:  
PIN 1. SOURCE  
2. GATE  
3. DRAIN  
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7
2N3819  
ON Semiconductor is a trademark and  
is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right  
to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products  
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any  
and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must  
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
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For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
2N3819/D  

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