20ETF10STRLPBF [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 20A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3;
| 型号： | 20ETF10STRLPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3 整流二极管 局域网 软恢复二极管 快速软恢复二极管 |
| 文件： | 总8页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• The fully isolated package (VINS = 2500 VRMS
is UL E78996 approved
)
Base
cathode
2
• Designed and qualified for industrial level
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
1
3
Cathode Anode
TO-220AC FULL-PAK
• Input rectifications where severe restrictions on
conducted EMI should be met
PRODUCT SUMMARY
DESCRIPTION
VF at 20 A
< 1.31 V
355 A
The 20ETF..FPPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
IFSM
VRRM
1000 V to 1200 V
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
IF(AV)
IFSM
trr
CHARACTERISTICS
VALUES
1000 to 1200
20
UNITS
V
Sinusoidal waveform
A
355
1 A, 100 A/μs
20 A, TJ = 25 °C
Range
95
ns
V
VF
1.31
TJ
- 40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
20ETF10FPPbF
20ETF12FPPbF
1000
1200
1100
1300
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
20
300
355
450
635
6350
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 93222
Revision: 26-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A, TJ = 25 °C
VALUES
1.31
11.88
0.93
0.1
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
V
m
V
rt
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VRRM
mA
TJ = 150 °C
6
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
400
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 20 Apk
trr
Irr
Qrr
S
6.1
A
25 A/μs
25 °C
ta tb
t
dir
dt
1.7
μC
Qrr
IRM(REC)
Typical
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
1.5
62
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
1.5
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
20ETF10FP
Case style TO-220AC FULL-PAK
20ETF12FP
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93222
Revision: 26-Jul-10
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
150
140
130
120
110
100
35
RthJC (DC) = 0.9 K/W
180°
120°
90°
60°
30°
30
25
20
15
10
5
Ø
Conduction angle
RMS limit
30°
Ø
60°
Conduction period
90°
TJ = 150 °C
120°
180°
0
0
5
10
15
20
25
0
5
10
15
20
25
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
350
300
250
200
150
100
50
150
140
130
120
110
100
At any rated load condition and with
rated VRRM applied following surge.
RthJC (DC) = 0.9 K/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
60°
90°
30°
120°
DC
30
180°
25
1
10
100
0
5
10
15
20
35
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
400
35
30
25
20
15
10
5
Maximum non-repetitive surge current
versus pulse train duration.
180°
120°
90°
60°
30°
350
300
250
200
150
100
50
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
TJ = 150 °C
0
0
5
10
15
20
25
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93222
Revision: 26-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
6
IFM = 30 A
TJ = 25 °C
TJ = 25 °C
5
4
3
2
1
0
I
FM = 30 A
IFM = 20 A
IFM = 20 A
IFM = 10 A
I
FM = 5 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
50
100
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
1.2
10
IFM = 30 A
TJ = 150 °C
TJ = 150 °C
8
0.9
0.6
0.3
0
IFM = 20 A
IFM = 30 A
FM = 20 A
IFM = 10 A
FM = 5 A
IFM = 1 A
I
6
IFM = 10 A
I
4
IFM = 5 A
2
IFM = 1 A
0
0
50
100
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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For technical questions within your region, please contact one of the following:
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Document Number: 93222
Revision: 26-Jul-10
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
25
20
15
10
5
35
IFM = 30 A
TJ = 150 °C
TJ = 25 °C
IFM = 30 A
30
25
20
15
10
5
IFM = 20 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 1 A
0
0
0
50
100
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 93222
Revision: 26-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
20
E
T
F
12
FP PbF
1
2
3
4
5
6
7
1
2
-
-
Current rating (20 = 20 A)
Circuit configuration:
E = Single diode
3
4
-
-
Package:
T = TO-220AC
Type of silicon:
F = Fast soft recovery rectifier
Voltage ratings
10 = 1000 V
12 = 1200 V
5
6
7
-
-
-
FULL-PAK
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95005
www.vishay.com/doc?95009
Part marking information
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93222
Revision: 26-Jul-10
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters
1ꢀ06
1ꢀ04
304
301
Hole Ø
208
206
307
302
7031
6091
160ꢀ
1508
1604
1504
1ꢀ°
303
301
13056
130ꢀ5
ꢀ09
ꢀ07
ꢀ061
ꢀ038
1015
10ꢀ5
2054 TYP0
TYP0
104
103
2054 TYP0
2085
2065
R ꢀ07
R ꢀ05
(2 places)
Lead assignments
Diodes
408
406
1 + 2 - Cathode
3 - Anode
5° ꢀ05°
5° ꢀ05°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
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