20ETF06FNPBF [VISHAY]
Fast Soft Recovery Rectifier Diode, 20 A; 快速软恢复整流二极管， 20 A
| 型号： | 20ETF06FNPBF |
| 厂家： | 
VISHAY |
| 描述： | Fast Soft Recovery Rectifier Diode, 20 A |
| 文件： | 总8页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20ETF..FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• The fully isolated package (VINS = 2500 VRMS) is
UL E78996 approved
Base
cathode
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
2
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
1
3
• Input rectifications where severe restrictions on
conducted EMI should be met
Cathode
Anode
TO-220AC FULL-PAK
DESCRIPTION
PRODUCT SUMMARY
The 20ETF..FPPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
VF at 10 A
< 1.2 V
300 A
200 V to 600 V
IFSM
VRRM
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
CHARACTERISTICS
VALUES
20
UNITS
Sinusoidal waveform
A
V
200 to 600
300
A
10 A, TJ = 25 °C
1 A, 100 A/μs
1.2
V
trr
60
ns
°C
TJ
- 40 to 150
VOLTAGE RATINGS
V
RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
20ETF02FPPbF
20ETF04FPPbF
20ETF06FPPbF
200
400
600
300
500
700
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 94 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
20
250
300
316
442
4420
A
Maximum peak one cycle non-repetitive
surge current
IFSM
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A, TJ = 25 °C
VALUES
1.30
1.67
12.5
0.9
UNITS
Maximum forward voltage drop
VFM
V
60 A, TJ = 25 °C
Forward slope resistance
Threshold voltage
rt
m
VF(TO)
TJ = 150 °C
TJ = 25 °C
V
0.1
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
160
10
IF at 20 Apk
trr
ta tb
Irr
Qrr
S
A
100 A/μs
25 °C
t
dir
dt
1.25
0.6
μC
Qrr
IRM(REC)
Typical
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
1.5
62
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
1.5
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
20ETF02FP
20ETF04FP
20ETF06FP
Case style TO-220 FULL-PAK
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94095
Revision: 06-Aug-10
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
150
140
130
120
110
100
90
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
60°
30°
20ETF.. Series
RthJC (DC) = 1.5 K/W
Ø
Conduction angle
RMS limit
Ø
Conduction period
20ETF.. Series
TJ = 150 °C
120° 180°
20
30°
10
60° 90°
15
80
0
0
5
25
0
5
10
15
20
25
30
35
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
300
250
200
150
100
At any rated load condition and with
rated VRRM applied following surge.
20ETF.. Series
RthJC (DC) = 1.5 K/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
90°
60°
120°
20ETF.. Series
DC
30
180°
25
50
80
0
5
10
15
20
35
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
35
30
25
20
15
10
5
550
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
20ETF.. Series
TJ = 150 °C
20ETF.. Series
0
0
5
10
15
20
25
0.001
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
1000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IFM = 30 A
IFM = 20 A
20ETF.. Series
TJ = 25 °C
100
IFM = 10 A
10
TJ = 25 °C
TJ = 150 °C
IFM = 5 A
IFM = 1 A
20ETF.. Series
1
0
0
0
1
2
3
4
5
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
0.15
0.10
0.05
0
10
20ETF.. Series
TJ = 150 °C
20ETF.. Series
TJ = 25 °C
9
IFM = 30 A
IFM = 20 A
8
7
6
5
4
3
2
1
0
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 10 A
IFM = 5 A
IFM = 5 A
IFM = 1 A
IFM = 1 A
0
200
400
600
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.5
70
20ETF.. Series
TJ = 150 °C
20ETF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
60
50
40
30
20
10
0
0.4
0.3
0.2
0.1
0
IFM = 30 A
I
FM = 20 A
IFM = 10 A
FM = 5 A
IFM = 1 A
I
IFM = 5 A
IFM = 1 A
800 1000
0
200
400
600
800
1000
0
200
400
600
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94095
Revision: 06-Aug-10
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
100
80
60
40
20
0
20ETF.. Series
TJ = 150 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
1
0.1
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
20
E
T
F
06
FP PbF
1
2
3
4
5
6
7
1
2
-
-
Current rating (20 = 20 A)
Circuit configuration:
E = Single diode
3
4
-
-
Package:
T = TO-220AC
Type of silicon:
F = Fast soft recovery rectifier
Voltage code x 100 = VRRM
FULL-PAK
02 = 200 V
04 = 400 V
06 = 600 V
5
6
7
-
-
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95005
www.vishay.com/doc?95009
www.vishay.com/doc?95410
Part marking information
SPICE model
www.vishay.com
6
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94095
Revision: 06-Aug-10
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters
1ꢀ06
1ꢀ04
304
301
Hole Ø
208
206
307
302
7031
6091
160ꢀ
1508
1604
1504
1ꢀ°
303
301
13056
130ꢀ5
ꢀ09
ꢀ07
ꢀ061
ꢀ038
1015
10ꢀ5
2054 TYP0
TYP0
104
103
2054 TYP0
2085
2065
R ꢀ07
R ꢀ05
(2 places)
Lead assignments
Diodes
408
406
1 + 2 - Cathode
3 - Anode
5° ꢀ05°
5° ꢀ05°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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1
相关型号：
20ETF06FPPBF
Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, FULLPACK-3
VISHAY
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