20ETF06SPBF [VISHAY]
Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A; 表面贴装快速软恢复整流二极管， 20 A
| 型号： | 20ETF06SPBF |
| 厂家： | 
VISHAY |
| 描述： | Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A |
| 文件： | 总8页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
Surface Mountable Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Base
common
cathode
+
• Designed
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
and
qualified
according
to
2
• Halogen-free according to IEC 61249-2-21
definition
D2PAK (SMD-220)
1
3
-
-
Anode
Anode
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
IF(AV)
20 A
200 V, 400 V, 600 V
1.3 V
DESCRIPTION
VR
The VS-20ETF..SPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
VF at IF
IFSM
300 A
trr
60 ns
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
TJ max.
Diode variation
Snap factor
150 °C
Single die
0.6
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
CHARACTERISTICS
VALUES
20
UNITS
Sinusoidal waveform
A
V
200 to 600
300
A
10 A, TJ = 25 °C
1 A, 100 A/μs
Range
1.2
V
trr
60
ns
°C
TJ
- 40 to 150
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-20ETF02SPbF
VS-20ETF04SPbF
VS-20ETF06SPbF
200
400
600
300
500
700
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 97 °C, 180° conduction half sine wave
VALUES
20
UNITS
Maximum average forward current
IF(AV)
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
250
A
Maximum peak one cycle
non-repetitive surge current
IFSM
300
316
Maximum I2t for fusing
I2t
A2s
442
Maximum I2t for fusing
I2t
4420
A2s
Revision: 17-Aug-11
Document Number: 94097
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A, TJ = 25 °C
VALUES
1.30
1.67
12.5
0.9
UNITS
Maximum forward voltage drop
VFM
V
60 A, TJ = 25 °C
Forward slope resistance
Threshold voltage
rt
m
VF(TO)
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
V
0.1
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
160
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 20 Apk
trr
Irr
Qrr
S
10
A
100 A/μs
25 °C
ta tb
t
dir
dt
1.25
0.6
μC
Qrr
IRM(REC)
Typical
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.9
40
°C/W
Maximum thermal resistance
junction to ambient (PCB mount)
(1)
RthJA
Soldering temperature
TS
240
2
°C
g
Approximate weight
0.07
oz.
20ETF02S
20ETF04S
20ETF06S
Marking device
Case style TO-263AB (D2PAK)
Note
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
(1)
Revision: 17-Aug-11
Document Number: 94097
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
45
40
35
30
25
20
15
10
5
20ETF.. Series
RthJC (DC) = 0.9 K/W
DC
180°
120°
90°
60°
30°
Ø
Conduction angle
RMS limit
Ø
Conduction period
120° 180°
60° 90°
30°
20ETF.. Series
TJ = 150 °C
80
70
0
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
30
35
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
300
250
200
150
100
50
20ETF.. Series
RthJC (DC) = 0.9 K/W
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
60°
90°
120°
20ETF.. Series
DC
30
180°
80
0
5
10
15
20
25
35
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
35
30
25
20
15
10
5
550
Maximum non-repetitive surge current
versus pulse train duration.
180°
120°
90°
60°
30°
500
450
400
350
300
250
200
150
100
50
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
20ETF.. Series
TJ = 150 °C
20ETF.. Series
0.001 0.01
0
0
5
10
15
20
25
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-11
Document Number: 94097
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
1000
100
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
IFM = 30 A
IFM = 20 A
20ETF.. Series
TJ = 25 °C
IFM = 10 A
IFM = 5 A
TJ = 25 °C
TJ = 150 °C
20ETF.. Series
IFM = 1 A
800 1000
1
0
1
2
3
4
5
0
200
400
600
dI/dt - Rate of Fall of Forward Current (A/µs)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
0.15
0.10
0.05
0
10
20ETF.. Series
TJ = 150 °C
20ETF.. Series
TJ = 25 °C
9
IFM = 30 A
8
IFM = 30 A
IFM = 20 A
7
IFM = 20 A
6
5
4
IFM = 10 A
IFM = 5 A
IFM = 10 A
3
2
1
0
IFM = 5 A
IFM = 1 A
IFM = 1 A
0
200
400
600
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.5
70
20ETF.. Series
TJ = 150 °C
20ETF.. Series
TJ = 25 °C
60
50
40
30
20
10
0
IFM = 30 A
IFM = 20 A
0.4
0.3
0.2
0.1
0
IFM = 30 A
IFM = 20 A
FM = 10 A
I
IFM = 10 A
IFM = 5 A
IFM = 5 A
IFM = 1 A
IFM = 1 A
800
0
200
400
600
800
1000
0
200
400
600
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 17-Aug-11
Document Number: 94097
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
100
80
60
40
20
0
20ETF.. Series
TJ = 150 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 17-Aug-11
Document Number: 94097
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF..SPbF Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
F
06
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = Single diode
-
-
Package:
4
5
T = TO-220
Type of silicon:
F = Fast soft recovery rectifier
Voltage code x 100 = VRRM
S = D2PAK
02 = 200 V
04 = 400 V
06 = 600 V
6
7
8
-
-
-
None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
PbF = Lead (Pb)-free
9
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
Revision: 17-Aug-11
Document Number: 94097
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Document Number: 91000
Revision: 11-Mar-11
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