1N4002GP/71 [VISHAY]
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;型号: | 1N4002GP/71 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
文件: | 总4页 (文件大小:329K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
®
IF(AV)
VRRM
IFSM
IR
1.0 A
50 V to 1000 V
30 A
5.0 µA
*
VF
1.1 V
d
e
t
n
e
Tj max.
175 °C
t
a
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
DO-204AL (DO-41)
brazed-lead assembly
by Patent No. 3,930,306
Features
Mechanical Data
• Superectifier structure for High Reliability
application
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Cavity-free glass-passivated junction
• Low forward voltage drop
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
• Low leakage current, typical I less than 0.1 µA
• High forward surge capability
R
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for both consumer and automotive applications
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
800
1000
V
* Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
420
600
560
800
700
V
V
* Maximum DC blocking
voltage
100
1000
* Maximum average forward
rectified current 0.375"
(9.5 mm) lead length
at TA = 75 °C
IF(AV)
1.0
A
* Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
30
A
* Maximum full load reverse
current, full cycle average
0.375" (9.5 mm) lead length
TA = 75 °C
IR(AV)
µA
* Operating junction and
TJ, TSTG
- 65 to + 175
°C
storage temperature range
Document Number 88504
14-Sep-05
www.vishay.com
1
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
Test condition Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit
at 1.0 A
VF
1.1
V
instantaneous
forward voltage
* Maximum DC
reverse current
at rated DC
T A= 2 5 ° C
TA = 125 °C
IR
5.0
50
µA
blocking voltage
Typical reverse at IF = 0.5 A,
trr
2.0
8.0
µs
pF
recovery time
IR = 1.0 A,
Irr = 0.25 A
Typical junction at 4.0 V, 1 MHz
capacitance
CJ
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit
Typical thermal resistance (1)
RθJA
RθJL
55
25
°C/W
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
* JEDEC registered values
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.0
0.8
0.6
0.4
0.2
0
30
25
20
15
10
5.0
60 Hz
Resistive or
Inductive Load
TJ = TJ max.
8.3 ms Single Half Sine-Wave
0.375" (9.5mm)
Lead Length
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88504
14-Sep-05
2
1N4001GP thru 1N4007GP
Vishay General Semiconductor
20
10
20
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
1
0.1
0.01
1
10
100
0.6
0.8
1.0
1.2
1.4
1.6
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
10
TJ = 100 °C
1
0.1
1
TJ = 25 °C
0.01
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
%)
eak Reverse Voltage (
Percent of Rated P
t - Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
0.026 (0.66)
0.023 (0.58)
NOTE: Lead diameter is
for suffix “E” part numbers
Document Number 88504
14-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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