1N4002GPE/66 [VISHAY]
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
| 型号： | 1N4002GPE/66 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction Rectifier
Reverse Voltage
50 to 1000V
Forward Current 1.0A
DO-204AL
(DO-41)
Features
1.0 (25.4)
MIN.
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
0.107 (2.7)
0.080 (2.0)
DIA.
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
0.205 (5.2)
0.160 (4.1)
• 1.0 Ampere operation at TA = 75°C with no thermal
runaway
• Typical IR less than 0.1µA
®
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
Mechanical Data
Case: JEDEC DO-204AL, molded plastic over glass body
0.034 (0.86)
0.028 (0.71)
DIA.
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
0.026 (0.66)
0.023 (0.58)
NOTE: Lead diameter is
for suffix "E" part numbers
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Weight: 0.012 oz., 0.3 g
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
1N
1N
1N
1N
1N
1N
1N
Parameter
Symbol
Unit
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP
Maximum repetitive peak reverse voltage
* Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
* Maximum DC blocking voltage
100
* Maximum average forward rectified current
0.375" (9.5mm) lead length at TA = 75°C
IF(AV)
IFSM
1.0
30
30
A
A
* Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
* Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length TA = 75°C
IR(AV)
µA
RθJA
RθJL
55
25
(Note 1)
Typical thermal resistance
°C/W
°C
* Operating junction and storage temperature range
TJ, TSTG
–65 to +175
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A
VF
1.1
V
* Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
5.0
50
IR
µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
2.0
µs
Typical junction capacitance at 4.0V, 1MHz
CJ
8.0
pF
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
Document Number 88504
08-Jul-03
www.vishay.com
1
1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Fig. 1 – Forward Current Derating Curve
30
25
20
15
10
5.0
1.0
TJ = TJmax
8.3ms Single Half Sine-Wave
(JEDEC Method)
60HZ Resistive or
Inductive Load
0.8
0.6
0.4
0.2
0.375" (9.5mm)
Lead Length
0
1
10
100
0
25
50
75
100
125
150
175
Ambient Temperature (°C)
Number of Cycles at 60H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 –Typical Reverse Characteristics
10
20
10
TJ = 100°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
1
0.1
0.01
0.1
TJ = 25°C
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig. 6 – Typical Transient Thermal
Impedance
Fig. 5 – Typical Junction Capacitance
20
10
100
10
1
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
1
0.1
0.1
0.01
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t -- Pulse Duration (sec)
www.vishay.com
2
Document Number 88504
08-Jul-03
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