10UT10 [VISHAY]
High Performance Generation 5.0 Schottky Rectifier, 10 A; 高性能5.0代肖特基整流器， 10 A
| 型号： | 10UT10 |
| 厂家： | 
VISHAY |
| 描述： | High Performance Generation 5.0 Schottky Rectifier, 10 A |
| 文件： | 总8页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
I-PAK(TO-251AA)
D-PAK(TO-252AA)
• Optimized VF vs. IR trade off for high efficiency
Base
cathode
4
Base
cathode
4
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
2
• Negligible switching losses
Cathode
3
3
1
1
• Submicron trench technology
Anode
Anode
Anode
Anode
2
Cathode
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
VS-10UT10
VS-10WT10FN
PRODUCT SUMMARY
APPLICATIONS
I-PAK(TO-251AA),
D-PAK (TO-252AA)
• High efficiency SMPS
• High frequency switching
• Output rectification
Package
IF(AV)
VR
10 A
100 V
• Reverse battery protection
• Freewheeling
VF at IF
0.66 V
IRM max.
TJ max.
Diode variation
EAS
4 mA at 125 °C
175 °C
• DC/DC systems
• Increased power density systems
Single die
54 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
VF
CHARACTERISTICS
VALUES
100
UNITS
V
V
10 Apk, TJ = 125 °C (typical)
Range
0.615
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
VS-10UT10
VS-10WT10FN
SYMBOL
TEST CONDITIONS
TJ = 25 °C
UNITS
Maximum DC reverse voltage
VR
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 159 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
10
A
Following any rated load
condition and with rated
V
5 μs sine or 3 μs rect. pulse
610
Maximum peak one cycle
non-repetitive surge current
IFSM
EAS
IAR
A
mJ
A
RRM applied (1)
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 3 A, L = 12 mH
110
54
Non-repetitive avalanche energy
Repetitive avalanche current
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
IAS at
TJ max.
Note
(1)
Measured connecting 2 anode pins
Revision: 10-Aug-11
Document Number: 94647
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.630
0.735
0.840
0.530
0.615
0.730
-
MAX. UNITS
5 A
-
10 A
TJ = 25 °C
0.810
20 A
0.890
(1)(2)
Forward voltage drop
VFM
V
5 A
-
10 A
TJ = 125 °C
0.660
0.770
20 A
TJ = 25 °C
TJ = 125 °C
50
μA
mA
pF
(1)
Reverse leakage current
IRM
VR = Rated VR
-
4
Junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
400
8.0
-
-
Series inductance
LS
nH
Maximum voltage rate of change
dV/dt
-
10 000
V/μs
Notes
(1)
Pulse width < 300 μs, duty cycle < 2 %
Only 1 anode pin connected
(2)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
2
°C/W
Typical thermal resistance,
case to heatsink
0.3
0.3
g
Approximate weight
Marking device
0.01
oz.
Case style I-PAK
Case style D-PAK
10UT10
10WT10FN
100
100
10
175 °C
150 °C
125 °C
TJ = 175 °C
1
100 °C
75 °C
50 °C
10
0.1
0.01
0.001
TJ = 125 °C
25 °C
TJ = 25 °C
1
0.0001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Aug-11
Document Number: 94647
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
1000
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
175
170
165
160
155
150
145
10
180°
120°
90°
60°
30°
8
6
4
2
0
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
0
2
4
6
8
10
12
14
16
0
3
6
9
12
15
IF(AV) Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 10-Aug-11
Document Number: 94647
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
1000
100
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
10
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 10-Aug-11
Document Number: 94647
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
U
T
10
FN TRL
1
2
3
4
5
6
7
-
-
-
Vishay Semiconductors product
Current rating (10 A)
Package:
1
2
3
U = I-PAK
W = D-PAK
-
-
-
-
T = Trench
4
5
6
7
Voltage code (100 V)
TO-252AA (D-PAK)
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95024
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95025
www.vishay.com/doc?95033
www.vishay.com/doc?95026
Revision: 10-Aug-11
Document Number: 94647
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
I-PAK - S, D-PAK
DIMENSIONS FOR I-PAK - S in millimeters
E
A
b3
E1
c2
4
3
2
1
b2
b3
c
b
e
e
DIMENSIONAL REQUIREMENTS
MIN. MAX.
SYMBOL
NOM.
6.60
4.13
0.76
2.16
6.10
11.25
0.76
0.84
5.34
0.51
2.286 BSC
2.30
0.50
0.50
-
E
L
6.40
3.98
0.66
1.96
6.00
11.05
0.64
0.77
5.21
0.41
6.70
4.28
0.86
2.36
6.20
11.45
0.88
1.14
5.46
0.61
L4
L5
D
H
b
b2
b3
b4
e
A
2.20
0.40
0.40
5.30
4.40
2.38
0.60
0.60
-
c
c2
D1
E1
-
-
Document Number: 95024
Revision: 05-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Outline Dimensions
Vishay Semiconductors
I-PAK - S, D-PAK
DIMENSIONS FOR D-PAK in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
MIN.
M
C A B
b3
0.010
c2
(6.74)
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
(6.23)
B
MIN.
MIN.
Seating
plane
D1
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
(2.28)
(2) L5
Detail “C”
A
0.06
b
0.010
MIN.
c
(1.524)
b2
C A B
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
Lead tip
(7)
C
Gauge
plane
C
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
2.29 BSC
H
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
(7)
(8)
Dimension b1 and c1 applied to base metal only
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC outline TO-252AA
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Document Number: 95024
Revision: 05-Jan-11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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