10UT10FNTR [VISHAY]
High Performance Generation 5.0 Schottky Rectifier, 10 A; 高性能5.0代肖特基整流器， 10 A
| 型号： | 10UT10FNTR |
| 厂家： | 
VISHAY |
| 描述： | High Performance Generation 5.0 Schottky Rectifier, 10 A |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
I-PAK(TO-251AA)
D-PAK(TO-252AA)
• Optimized VF vs. IR trade off for high efficiency
Base
cathode
4
Base
cathode
4
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
2
• Negligible switching losses
Cathode
3
3
1
1
• Submicron trench technology
Anode
Anode
Anode
Anode
2
Cathode
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
VS-10UT10
VS-10WT10FN
PRODUCT SUMMARY
APPLICATIONS
I-PAK(TO-251AA),
D-PAK (TO-252AA)
• High efficiency SMPS
• High frequency switching
• Output rectification
Package
IF(AV)
VR
10 A
100 V
• Reverse battery protection
• Freewheeling
VF at IF
0.66 V
IRM max.
TJ max.
Diode variation
EAS
4 mA at 125 °C
175 °C
• DC/DC systems
• Increased power density systems
Single die
54 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
VF
CHARACTERISTICS
VALUES
100
UNITS
V
V
10 Apk, TJ = 125 °C (typical)
Range
0.615
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
VS-10UT10
VS-10WT10FN
SYMBOL
TEST CONDITIONS
TJ = 25 °C
UNITS
Maximum DC reverse voltage
VR
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 159 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
10
A
Following any rated load
condition and with rated
V
5 μs sine or 3 μs rect. pulse
610
Maximum peak one cycle
non-repetitive surge current
IFSM
EAS
IAR
A
mJ
A
RRM applied (1)
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 3 A, L = 12 mH
110
54
Non-repetitive avalanche energy
Repetitive avalanche current
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
IAS at
TJ max.
Note
(1)
Measured connecting 2 anode pins
Revision: 02-Nov-11
Document Number: 94647
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.630
0.735
0.840
0.530
0.615
0.730
-
MAX. UNITS
5 A
-
10 A
TJ = 25 °C
0.810
20 A
0.890
(1)(2)
Forward voltage drop
VFM
V
5 A
-
10 A
TJ = 125 °C
0.660
0.770
20 A
TJ = 25 °C
TJ = 125 °C
50
μA
mA
pF
(1)
Reverse leakage current
IRM
VR = Rated VR
-
4
Junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
400
8.0
-
-
Series inductance
LS
nH
Maximum voltage rate of change
dV/dt
-
10 000
V/μs
Notes
(1)
Pulse width < 300 μs, duty cycle < 2 %
Only 1 anode pin connected
(2)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
2
°C/W
Typical thermal resistance,
case to heatsink
0.3
0.3
g
Approximate weight
Marking device
0.01
oz.
Case style I-PAK
Case style D-PAK
10UT10
10WT10FN
100
100
10
175 °C
150 °C
125 °C
TJ = 175 °C
1
100 °C
75 °C
50 °C
10
0.1
0.01
0.001
TJ = 125 °C
25 °C
TJ = 25 °C
1
0.0001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Nov-11
Document Number: 94647
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
1000
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
175
170
165
160
155
150
145
10
180°
120°
90°
60°
30°
8
6
4
2
0
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
0
2
4
6
8
10
12
14
16
0
3
6
9
12
15
IF(AV) Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 02-Nov-11
Document Number: 94647
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
1000
100
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
10
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 02-Nov-11
Document Number: 94647
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
U
T
10
FN TRL
1
2
3
4
5
6
7
-
-
-
Vishay Semiconductors product
Current rating (10 A)
Package:
1
2
3
U = I-PAK
W = D-PAK
-
-
-
-
T = Trench
4
5
6
7
Voltage code (100 V)
TO-252AA (D-PAK)
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
I-PAK (TO-251AA)
D-PAK (TO-252AA)
I-PAK (TO-251AA)
D-PAK (TO-252AA)
www.vishay.com/doc?95024
www.vishay.com/doc?95448
www.vishay.com/doc?95025
www.vishay.com/doc?95059
www.vishay.com/doc?95033
www.vishay.com/doc?95026
Dimensions
Part marking information
Packaging information
SPICE model
Revision: 02-Nov-11
Document Number: 94647
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
I-PAK - S
DIMENSIONS FOR I-PAK - S in millimeters
E
A
b3
E1
c2
4
3
2
1
b2
b4
c
b
e
e
DIMENSIONAL REQUIREMENTS
MIN. MAX.
SYMBOL
NOM.
6.60
4.13
0.76
2.16
6.10
11.25
0.76
0.84
5.34
0.51
2.286 BSC
2.30
0.50
0.50
-
E
L
6.40
3.98
0.66
1.96
6.00
11.05
0.64
0.77
5.21
0.41
6.70
4.28
0.86
2.36
6.20
11.45
0.88
1.14
5.46
0.61
L4
L5
D
H
b
b2
b3
b4
e
A
2.20
0.40
0.40
5.30
4.40
2.38
0.60
0.60
-
c
c2
D1
E1
-
-
Document Number: 95024
Revision: 24-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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