V23990-P640-G06Y-PM [VINCOTECH]
High inrush current capability;型号: | V23990-P640-G06Y-PM |
厂家: | VINCOTECH |
描述: | High inrush current capability |
文件: | 总20页 (文件大小:7642K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V23990-P640-G06Y-PM
datasheet
flowCON 0
1600 V / 75 A
Features
flow 0 12 mm housing
● Three-phase input rectifier
● Brake chopper
Schematic
Target applications
● Industrial Drives
● Embedded Drives
● UPS
Types
● V23990-P640-G06Y-PM
Copyright Vincotech
1
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Switch
VCES
Collector-emitter voltage
1200
35
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
72
W
V
VGES
Gate-emitter voltage
±20
150
Tjmax
Maximum junction temperature
°C
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
23
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
50
A
Ptot
41
W
°C
Tjmax
Maximum junction temperature
150
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
3
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
6
A
Ptot
19
150
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
2
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
78
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
740
2740
88
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
>12,7
9,11
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
3
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0015
35
25
5
5,8
6,5
V
V
25
1,35
1,74
1,98
2,05(1)
15
0
125
1200
0
25
25
250
600
µA
nA
Ω
30
6
Cies
2530
132
115
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,97
K/W
25
87
84
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
20
tr
125
25
22
Rgon = 32 Ω
Rgoff = 16 Ω
521
td(off)
Turn-off delay time
Fall time
ns
125
25
615
0/15
700
35
50,22
141,88
3,49
4,47
2,68
4,32
tf
ns
125
25
QrFWD=2,75 µC
QrFWD=5,03 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
4
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,23
1,78
1,8
1,97(1)
20
VF
IR
Forward voltage
25
V
125
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,72
K/W
25
37,42
45,3
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
301,34
419,53
2,75
trr
ns
125
25
di/dt=2239 A/µs
di/dt=2068 A/µs
Qr
0/15
700
35
μC
125
25
5,03
1,04
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
2,06
2619
1765
(dirf/dt)max
125
Brake Sw. Protection Diode
Static
25
1,23
1,67
1,59
1,97(1)
27
VF
IR
Forward voltage
3
V
125
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
3,72
K/W
Copyright Vincotech
5
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,18
1,15
1,23(1)
VF
IR
Forward voltage
80
125
150
25
V
1,17(1)
50
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1500
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,79
K/W
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
6
30 Apr. 2021 / Revision 1
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datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
75
50
25
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
12
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
0,974
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,59E-02
1,61E-01
6,07E-01
7,79E-02
3,57E-02
2,73E-02
3,01E+00
3,99E-01
8,47E-02
1,42E-02
2,31E-03
4,08E-04
Copyright Vincotech
7
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
8
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
1,717
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
5,74E-02
1,85E-01
9,45E-01
2,69E-01
1,43E-01
1,19E-01
3,42E+00
4,11E-01
7,07E-02
1,95E-02
3,59E-03
4,63E-04
Copyright Vincotech
9
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
7
6
5
4
3
2
1
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
3,715
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,58E-01
5,74E-01
1,74E+00
5,91E-01
6,54E-01
3,25E+00
1,68E-01
4,01E-02
8,37E-03
1,47E-03
Copyright Vincotech
10
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,792
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,05E-02
8,93E-02
2,82E-01
3,51E-01
3,93E-02
5,90E+00
1,13E+00
1,79E-01
6,17E-02
3,00E-03
Copyright Vincotech
11
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switching Characteristics
figure 12.
IGBT
figure 13.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
9
8
7
6
5
4
3
2
1
0
12,5
10,0
7,5
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
5,0
Eoff
2,5
0,0
0
10
20
30
40
50
60
70
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
32
V
125 °C
700
0/15
35
V
V
A
125 °C
V
Rgon
Rgoff
Ω
Ω
16
figure 14.
FWD
figure 15.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
32
V
125 °C
700
0/15
35
V
125 °C
V
V
A
Ω
Copyright Vincotech
12
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
tf
-1
10
td(on)
td(on)
-1
10
tf
tr
tr
-2
10
-2
10
0
10
20
30
40
50
60
70
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
700
0/15
32
°C
125
700
0/15
35
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
16
figure 18.
FWD
figure 19.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
32
V
125 °C
700
0/15
35
V
125 °C
V
V
A
Ω
Copyright Vincotech
13
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switching Characteristics
figure 20.
FWD
figure 21.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
32
V
125 °C
700
0/15
35
V
125 °C
V
V
A
Ω
figure 22.
FWD
figure 23.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
60
50
40
30
20
10
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
32
V
125 °C
700
0/15
35
V
V
A
125 °C
V
Ω
Copyright Vincotech
14
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
4000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
dirr/dt ──────
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
32
V
V
Ω
125 °C
700
0/15
35
V
V
A
125 °C
figure 26.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Rgon
Rgoff
=
=
32
16
Ω
Ω
Copyright Vincotech
15
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switching Definitions
figure 27.
IGBT
figure 28.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 29.
IGBT
figure 30.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
16
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Brake Switching Definitions
figure 31.
FWD
figure 32.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
17
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
V23990-P640-G06Y-PM
V23990-P640-G06Y-/3/-PM
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
BrE
33,5
30,7
26,4
23,9
21,4
18,9
0
0
0
0
0
0
2
BrG
3
DC-
4
DC-
5
DC-
6
DC-
7
not assembled
8
not assembled
9
not assembled
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0
0
DC+
DC+
DC+
DC+
L1
2,5
0
5
0
7,5
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,1
14,6
7
2,5
5
L1
L1
12
L2
14,5
17
L2
L2
24
L3
26,5
29
L3
L3
33,5
33,5
33,5
BrC
BrC
Br+
Copyright Vincotech
18
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Pinout
DC+
10,11,12,13
Br+
25
D1
D3
D5
D7
L1
14,15,16
L2
17,18,19
BrC
23,24
L3
T1
D8
20,21,22
2
1
BrG
BrE
D2
D4
D6
3,4,5,6
DC-
Identification
Component
Voltage
Current
Function
Comment
ID
T1
IGBT
FWD
FWD
1200 V
1200 V
1200 V
35 A
25 A
3 A
Brake Switch
Brake Diode
D7
D8
D2, D1, D4, D3, D6,
D5
Brake Sw. Protection Diode
Rectifier
1600 V
80 A
Rectifier Diode
Copyright Vincotech
19
30 Apr. 2021 / Revision 1
V23990-P640-G06Y-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P640-G06Y-PM-D1-14
30 Apr. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
30 Apr. 2021 / Revision 1
相关型号:
V23990-P689-F-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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