V23990-P640-G06Y-PM [VINCOTECH]

High inrush current capability;
V23990-P640-G06Y-PM
型号: V23990-P640-G06Y-PM
厂家: VINCOTECH    VINCOTECH
描述:

High inrush current capability

文件: 总20页 (文件大小:7642K)
中文:  中文翻译
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V23990-P640-G06Y-PM  
datasheet  
flowCON 0  
1600 V / 75 A  
Features  
flow 0 12 mm housing  
● Three-phase input rectifier  
● Brake chopper  
Schematic  
Target applications  
● Industrial Drives  
● Embedded Drives  
● UPS  
Types  
● V23990-P640-G06Y-PM  
Copyright Vincotech  
1
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Brake Switch  
VCES  
Collector-emitter voltage  
1200  
35  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
70  
A
Ptot  
72  
W
V
VGES  
Gate-emitter voltage  
±20  
150  
Tjmax  
Maximum junction temperature  
°C  
Brake Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
23  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
50  
A
Ptot  
41  
W
°C  
Tjmax  
Maximum junction temperature  
150  
Brake Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
1200  
3
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
6
A
Ptot  
19  
150  
W
°C  
Tjmax  
Maximum junction temperature  
Copyright Vincotech  
2
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Rectifier Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
78  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
740  
2740  
88  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
>12,7  
9,11  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
3
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Brake Switch  
Static  
VGE(th)  
VCEsat  
ICES  
IGES  
rg  
Gate-emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
VCE = VGE  
0,0015  
35  
25  
5
5,8  
6,5  
V
V
25  
1,35  
1,74  
1,98  
2,05(1)  
15  
0
125  
1200  
0
25  
25  
250  
600  
µA  
nA  
Ω
30  
6
Cies  
2530  
132  
115  
pF  
pF  
pF  
Coes  
Cres  
Output capacitance  
f = 1 Mhz  
0
25  
25  
Reverse transfer capacitance  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,97  
K/W  
25  
87  
84  
td(on)  
Turn-on delay time  
Rise time  
ns  
ns  
125  
25  
20  
tr  
125  
25  
22  
Rgon = 32 Ω  
Rgoff = 16 Ω  
521  
td(off)  
Turn-off delay time  
Fall time  
ns  
125  
25  
615  
0/15  
700  
35  
50,22  
141,88  
3,49  
4,47  
2,68  
4,32  
tf  
ns  
125  
25  
QrFWD=2,75 µC  
QrFWD=5,03 µC  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
mWs  
125  
25  
125  
Copyright Vincotech  
4
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Brake Diode  
Static  
25  
1,23  
1,78  
1,8  
1,97(1)  
20  
VF  
IR  
Forward voltage  
25  
V
125  
Reverse leakage current  
Vr = 1200 V  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,72  
K/W  
25  
37,42  
45,3  
IRRM  
Peak recovery current  
Reverse recovery time  
Recovered charge  
A
125  
25  
301,34  
419,53  
2,75  
trr  
ns  
125  
25  
di/dt=2239 A/µs  
di/dt=2068 A/µs  
Qr  
0/15  
700  
35  
μC  
125  
25  
5,03  
1,04  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
125  
25  
2,06  
2619  
1765  
(dirf/dt)max  
125  
Brake Sw. Protection Diode  
Static  
25  
1,23  
1,67  
1,59  
1,97(1)  
27  
VF  
IR  
Forward voltage  
3
V
125  
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
3,72  
K/W  
Copyright Vincotech  
5
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Rectifier Diode  
Static  
25  
1,18  
1,15  
1,23(1)  
VF  
IR  
Forward voltage  
80  
125  
150  
25  
V
1,17(1)  
50  
Reverse leakage current  
Thermal  
Vr = 1600 V  
µA  
150  
1500  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,79  
K/W  
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
6
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
80  
100  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
60  
40  
20  
75  
50  
25  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
125  
μs  
°C  
25 °C  
Tj:  
VGE  
Tj =  
125 °C  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
35  
10  
30  
25  
20  
15  
10  
5
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
12  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,974  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
6,59E-02  
1,61E-01  
6,07E-01  
7,79E-02  
3,57E-02  
2,73E-02  
3,01E+00  
3,99E-01  
8,47E-02  
1,42E-02  
2,31E-03  
4,08E-04  
Copyright Vincotech  
7
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
8
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
70  
60  
50  
40  
30  
20  
10  
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
μs  
1,5  
2,0  
2,5  
3,0  
3,5  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
D =  
tp / T  
1,717  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
5,74E-02  
1,85E-01  
9,45E-01  
2,69E-01  
1,43E-01  
1,19E-01  
3,42E+00  
4,11E-01  
7,07E-02  
1,95E-02  
3,59E-03  
4,63E-04  
Copyright Vincotech  
9
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Sw. Protection Diode Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
7
6
5
4
3
2
1
0
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
3,715  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
1,58E-01  
5,74E-01  
1,74E+00  
5,91E-01  
6,54E-01  
3,25E+00  
1,68E-01  
4,01E-02  
8,37E-03  
1,47E-03  
Copyright Vincotech  
10  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Rectifier Diode Characteristics  
figure 10.  
Rectifier  
figure 11.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
200  
150  
100  
50  
10  
-1  
10  
-2  
10  
0,5  
0,2  
-3  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
0,00  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,25  
0,50  
μs  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
VF(V)  
10  
10  
10  
10  
tp(s)  
tp  
=
250  
D =  
tp / T  
0,792  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
3,05E-02  
8,93E-02  
2,82E-01  
3,51E-01  
3,93E-02  
5,90E+00  
1,13E+00  
1,79E-01  
6,17E-02  
3,00E-03  
Copyright Vincotech  
11  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switching Characteristics  
figure 12.  
IGBT  
figure 13.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(IC)  
E = f(Rg)  
9
8
7
6
5
4
3
2
1
0
12,5  
10,0  
7,5  
Eon  
Eon  
Eon  
Eoff  
Eon  
Eoff  
Eoff  
5,0  
Eoff  
2,5  
0,0  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
0
25  
50  
75  
100  
125  
150  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
125 °C  
700  
0/15  
35  
V
V
A
125 °C  
V
Rgon  
Rgoff  
Ω
Ω
16  
figure 14.  
FWD  
figure 15.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Erec  
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
125 °C  
700  
0/15  
35  
V
125 °C  
V
V
A
Ω
Copyright Vincotech  
12  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switching Characteristics  
figure 16.  
IGBT  
figure 17.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(off)  
td(off)  
0
10  
tf  
-1  
10  
td(on)  
td(on)  
-1  
10  
tf  
tr  
tr  
-2  
10  
-2  
10  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
0
25  
50  
75  
100  
125  
150  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
125  
700  
0/15  
32  
°C  
125  
700  
0/15  
35  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
V
V
Ω
Ω
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
A
16  
figure 18.  
FWD  
figure 19.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn off gate resistor  
trr = f(IC)  
trr = f(Rgoff)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
trr  
trr  
trr  
trr  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
125 °C  
700  
0/15  
35  
V
125 °C  
V
V
A
Ω
Copyright Vincotech  
13  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switching Characteristics  
figure 20.  
FWD  
figure 21.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of turn off gate resistor  
Qr = f(IC)  
Qr = f(Rgoff)  
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr  
Qr  
Qr  
Qr  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
125 °C  
700  
0/15  
35  
V
125 °C  
V
V
A
Ω
figure 22.  
FWD  
figure 23.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of turn off gate resistor  
IRM = f(IC)  
IRM = f(Rgoff)  
60  
50  
40  
30  
20  
10  
0
125  
100  
75  
50  
25  
0
IRM  
IRM  
IRM  
IRM  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
125 °C  
700  
0/15  
35  
V
V
A
125 °C  
V
Ω
Copyright Vincotech  
14  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switching Characteristics  
figure 24.  
FWD  
figure 25.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgoff)  
4000  
10000  
8000  
6000  
4000  
2000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
dirr/dt ──────  
0
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
IC(A)  
Rgoff(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
Tj:  
Tj:  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
V
Ω
125 °C  
700  
0/15  
35  
V
V
A
125 °C  
figure 26.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
80  
IC MAX  
70  
60  
50  
40  
30  
20  
10  
0
0
250  
500  
750  
1000  
1250  
1500  
V
CE(V)  
Tj =  
At  
125  
°C  
Rgon  
Rgoff  
=
=
32  
16  
Ω
Ω
Copyright Vincotech  
15  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switching Definitions  
figure 27.  
IGBT  
figure 28.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 29.  
IGBT  
figure 30.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
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30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Brake Switching Definitions  
figure 31.  
FWD  
figure 32.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
17  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
Without thermal paste  
With thermal paste  
V23990-P640-G06Y-PM  
V23990-P640-G06Y-/3/-PM  
VIN  
VIN  
Date code  
WWYY  
Type&Ver  
TTTTTTTVV  
Serial  
UL  
UL  
Lot  
Serial  
Text  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
BrE  
33,5  
30,7  
26,4  
23,9  
21,4  
18,9  
0
0
0
0
0
0
2
BrG  
3
DC-  
4
DC-  
5
DC-  
6
DC-  
7
not assembled  
8
not assembled  
9
not assembled  
0
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
0
0
DC+  
DC+  
DC+  
DC+  
L1  
2,5  
0
5
0
7,5  
0
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
17,1  
14,6  
7
2,5  
5
L1  
L1  
12  
L2  
14,5  
17  
L2  
L2  
24  
L3  
26,5  
29  
L3  
L3  
33,5  
33,5  
33,5  
BrC  
BrC  
Br+  
Copyright Vincotech  
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30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Pinout  
DC+  
10,11,12,13  
Br+  
25  
D1  
D3  
D5  
D7  
L1  
14,15,16  
L2  
17,18,19  
BrC  
23,24  
L3  
T1  
D8  
20,21,22  
2
1
BrG  
BrE  
D2  
D4  
D6  
3,4,5,6  
DC-  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T1  
IGBT  
FWD  
FWD  
1200 V  
1200 V  
1200 V  
35 A  
25 A  
3 A  
Brake Switch  
Brake Diode  
D7  
D8  
D2, D1, D4, D3, D6,  
D5  
Brake Sw. Protection Diode  
Rectifier  
1600 V  
80 A  
Rectifier Diode  
Copyright Vincotech  
19  
30 Apr. 2021 / Revision 1  
V23990-P640-G06Y-PM  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
V23990-P640-G06Y-PM-D1-14  
30 Apr. 2021  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
20  
30 Apr. 2021 / Revision 1  

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