V23990-P689-F-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P689-F-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总16页 (文件大小：6806K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P689-F-PM
datasheet
flowPACK 2
1200 V / 100 A
Features
flow 2 17 mm housing
● High power flow2 housing
● Trench Fieldstop Technology IGBT4
● Compact and low inductive design
Schematic
Target applications
● Motor Drive
● Power Generation
● UPS
Types
● V23990-P689-F-PM
Copyright Vincotech
1
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
115
300
307
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
91
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
176
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
min. 12,7
> 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0034
100
25
5,3
5,8
6,3
V
25
1,58
1,94
2,35
2,07(1)
15
0
V
150
1200
0
25
25
2
µA
nA
Ω
20
240
2
Cies
Cres
Qg
5600
200
760
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,31
K/W
25
103,8
107,8
17,6
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
23
Rgon = 4 Ω
Rgoff = 4 Ω
218,6
293,2
71,68
110,56
4,04
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
100
tf
ns
150
25
QrFWD=9,32 µC
QrFWD=18,66 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
6,73
5,25
150
8,77
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,99
2,01
2,05(1)
18
VF
IR
Forward voltage
100
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,54
K/W
25
163,67
186,62
130,08
294,35
9,32
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
trr
ns
150
25
di/dt=6900 A/µs
di/dt=5512 A/µs
Qr
±15
600
100
μC
150
25
18,66
3,87
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
7,96
8743
(dirf/dt)max
150
3702
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
VCE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,309
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,00E-02
7,30E-02
1,19E-01
4,31E-02
1,45E-02
1,67E+00
2,35E-01
5,35E-02
1,45E-02
1,21E-03
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
CE(V)
V
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,539
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
3,25E-02
5,01E-02
1,38E-01
2,22E-01
5,69E-02
3,92E-02
4,14E+00
9,90E-01
1,45E-01
3,37E-02
9,51E-03
7,97E-04
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switching Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eon
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
150 °C
600
±15
100
V
150 °C
V
A
Rgon
Rgoff
4
figure 10.
FWD
figure 11.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
12
10
8
10
Erec
8
Erec
6
6
Erec
4
4
Erec
2
2
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
8
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switching Characteristics
figure 12.
IGBT
figure 13.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
-1
10
tf
tr
-1
10
tr
-2
10
-3
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 14.
FWD
figure 15.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
9
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switching Characteristics
figure 16.
FWD
figure 17.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
30
25
20
15
10
5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
figure 18.
FWD
figure 19.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
250
200
150
100
50
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
10
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switching Characteristics
figure 20.
FWD
figure 21.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
150 °C
600
±15
100
V
V
A
150 °C
V
Ω
figure 22.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
11
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switching Definitions
figure 23.
IGBT
figure 24.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 25.
IGBT
figure 26.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
12
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Inverter Switching Definitions
figure 27.
FWD
figure 28.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
13
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Ordering Code
Marking
Version
Ordering Code
V23990-P689-F-PM
V23990-P689-F-/3/-PM
Without thermal paste
With thermal paste (3,4 W/mK, PSX-P7)
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
S11
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
57,2
57,2
65,8
65,8
68,5
68,5
64,1
61,4
58,7
56
0
DC-3
DC-3
1,2
2,7
2
1,2
2,7
0
G11
0
DC+3
DC+3
DC+3
DC+3
G16
S16
Ph3
3
3,9
DC-1
DC-1
DC-1
DC-1
DC+1
DC+1
DC+1
DC+1
S13
2,7
0
4
3,9
2,7
0
5
6,6
2,7
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
6
6,6
2,7
0
7
15,2
15,2
17,9
17,9
26,5
26,5
29,2
29,2
31,9
31,9
40,5
40,5
43,2
43,2
51,8
51,8
54,5
54,5
8
2,7
0
9
Ph3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
2,7
0
53,3
50,6
38,8
36,1
33,4
30,7
28
Ph3
Ph3
2,7
0
G13
G14
S14
Ph2
DC-2
DC-2
DC-2
DC-2
DC+2
DC+2
DC+2
DC+2
S15
2,7
0
Ph2
2,7
0
Ph2
25,3
13,5
10,8
8,1
Ph2
2,7
0
G12
S12
Ph1
2,7
0
5,4
Ph1
2,7
0
G15
2,7
Ph1
DC-3
DC-3
0
Ph1
2,7
Copyright Vincotech
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26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Pinout
DC+1
7,8,9,10
DC+2
17,18,19,20
DC+3
27,28,29,30
T12
T14
T16
D11
D13
D15
G12
43
G14
37
G16
31
S12
S14
S16
44
38
32
PH1
45,46,47,48
PH2
39,40,41,42
PH3
33,34,35,36
T11
T13
T15
D12
D14
D16
G11
2
G13
12
G15
22
S11
S13
S15
1
11
21
DC-1
3,4,5,6
DC-2
13,14,15,16
DC-3
23,24,25,26
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
100 A
100 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
1200 V
Inverter Diode
Copyright Vincotech
15
26 Sep. 2021 / Revision 4
V23990-P689-F-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Introduce Rth values with PSX-P7 TIM
V23990-P689-F-PM-D4-14
26 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
26 Sep. 2021 / Revision 4
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