V23990-P580-A47-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P580-A47-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总29页 (文件大小：8784K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P580-A47-PM
datasheet
flowPIM 1
1200 V / 35 A
Features
flow 1 17 mm housing
● Three-phase rectifier, optional BRC, Inverter, NTC
● Very compact housing, easy to route
● IGBT4 / EmCon4 technology for low saturation
losses and improved EMC behavior
Schematic
Target applications
● Industrial drives
● Embedded drives
Types
● V23990-P580-A47-PM
Copyright Vincotech
1
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
54
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
105
181
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
61
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
70
A
Ptot
144
175
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
54
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
105
181
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1600
36
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
130
80
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
58
Tjmax
Maximum junction temperature
150
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
61
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
90
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0012
35
25
5,3
5,8
6,3
V
25
1,58
1,95
2,4
2,07(1)
15
0
V
150
1200
0
25
25
5
µA
nA
Ω
20
120
None
2000
70
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
270
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,53
K/W
25
92
91,6
18
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
23,4
212,6
273,8
75,33
104,91
1,62
2,49
1,81
2,82
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
35
tf
ns
150
25
QrFWD=3,93 µC
QrFWD=7,47 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
150
Copyright Vincotech
4
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,83
1,8
2,05(1)
7,7
VF
IR
Forward voltage
35
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,66
K/W
25
68,91
78,7
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
150,18
277,1
3,93
trr
ns
150
25
di/dt=2744 A/µs
di/dt=2239 A/µs
Qr
±15
600
35
μC
150
25
7,47
1,69
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
3,31
4100
2080
(dirf/dt)max
150
Copyright Vincotech
5
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0012
35
25
5,3
5,8
6,3
V
25
1,58
1,95
2,4
2,07(1)
15
0
V
150
1200
0
25
25
5
µA
nA
Ω
20
120
None
2000
70
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
270
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,53
K/W
25
93,2
97,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
97,4
32,6
tr
125
150
25
34,8
34,8
Rgon = 16 Ω
Rgoff = 16 Ω
195,2
248,6
264
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
300
20
102,12
147,41
163
tf
125
150
25
ns
QrFWD=24,35 µC
QrFWD=25,94 µC
QrFWD=28 µC
4,11
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
4,65
mWs
mWs
4,98
0,783
1,29
Eoff
125
150
1,48
Copyright Vincotech
6
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Brake Diode
Static
25
1,03
1,11(1)
VF
IR
Forward voltage
7
125
150
25
0,961
V
1,01(1)
5
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
700
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,21
K/W
Rectifier Diode
Static
25
1,15
1,1
1,5(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Vr = 1600 V
µA
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,78
K/W
Copyright Vincotech
7
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,525
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,54E-02
7,24E-02
1,86E-01
1,25E-01
5,08E-02
4,60E-02
2,18E+00
4,41E-01
7,20E-02
2,12E-02
2,99E-03
5,56E-04
Copyright Vincotech
9
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,658
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
3,19E-02
6,47E-02
1,55E-01
2,31E-01
9,18E-02
8,32E-02
4,88E+00
8,75E-01
1,07E-01
2,86E-02
4,91E-03
8,44E-04
Copyright Vincotech
11
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
35
10
30
25
20
15
10
5
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,525
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,54E-02
7,24E-02
1,86E-01
1,25E-01
5,08E-02
4,60E-02
2,18E+00
4,41E-01
7,20E-02
2,12E-02
2,99E-03
5,56E-04
Copyright Vincotech
12
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
CE(V)
V
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Diode Characteristics
figure 13.
Rectifier
figure 14.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
0,75
1,00
1,25
1,50
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,207
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,84E-02
9,58E-02
3,31E-01
3,77E-01
2,24E-01
1,41E-01
9,11E+00
7,20E-01
6,88E-02
1,87E-02
3,64E-03
8,43E-04
Copyright Vincotech
14
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
80
60
40
20
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,779
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
2,91E-02
7,35E-02
1,61E-01
2,98E-01
1,23E-01
9,51E-02
9,03E+00
9,52E-01
1,41E-01
3,46E-02
5,73E-03
1,21E-03
Copyright Vincotech
15
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eon
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eoff
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Rgon
Rgoff
Ω
Ω
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Ω
Copyright Vincotech
17
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
tf
-1
10
tr
tf
td(on)
-1
10
-2
10
tr
-2
10
-3
10
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
150
600
±15
35
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
150 °C
600
±15
35
V
150 °C
V
A
Ω
Copyright Vincotech
18
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
Qr
4
2
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
150 °C
600
±15
35
V
150 °C
V
V
A
Ω
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
120
100
80
60
40
20
0
175
150
125
100
75
IRM
IRM
50
IRM
IRM
25
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
150 °C
600
±15
35
V
V
A
150 °C
Ω
Copyright Vincotech
19
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
150 °C
600
±15
35
V
V
A
150 °C
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
20
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
125 °C
150 °C
300
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
16
figure 35.
Rectifier
figure 36.
Rectifier
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
125 °C
150 °C
300
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
21
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
td(off)
tr
-1
10
tf
td(on)
-1
10
tr
-2
10
-2
10
-3
10
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
300
±15
16
°C
150
300
±15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 39.
Rectifier
figure 40.
Rectifier
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
125 °C
150 °C
300
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
Copyright Vincotech
22
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Switching Characteristics
figure 41.
Rectifier
figure 42.
Rectifier
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
45
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
5
10
15
20
25
30
35
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
125 °C
150 °C
300
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 43.
Rectifier
figure 44.
Rectifier
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
5
10
15
20
25
30
35
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
125 °C
150 °C
300
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
23
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Brake Switching Characteristics
figure 45.
Rectifier
figure 46.
Rectifier
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
800
4500
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
700
600
500
400
300
200
100
0
dirr/dt ──────
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
300
±15
16
V
V
125 °C
150 °C
300
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
24
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Ordering Code
Marking
Version
Ordering Code
V23990-P580-A47-PM
V23990-P580-A47-/3/-PM
Without thermal paste
With thermal paste (3,4 W/mK, PSX-P7)
VIN
VIN
Date code
WWYY
Type&Ver
TTTTTTTVV
Serial
UL
UL
Lot
Serial
Text
LLLLL
SSSS
Type&Ver
Lot number
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
G27
52,55
47,7
44,8
37,8
37,8
35
2
0
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Inv
DC+Inv
Therm1
Therm2
DC-3
G15
3
0
4
0
5
2,8
0
6
7
35
2,8
0
8
28
9
25,2
22,4
19,6
16,8
14
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
0
0
S15
0
DC-2
G13
11,2
8,4
0
0
S13
5,6
0
DC-1
G11
2,8
0
0
0
S11
0
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
25
16,9
8,6
2,8
Ph1
2,8
G12
7,5
S12
14,5
17,3
22
Ph2
G14
S14
29
Ph3
31,8
36,5
43,5
52,55
52,55
52,55
52,55
G16
S16
ACIn1
ACIn2
ACIn3
Br
DC-Br
Copyright Vincotech
27
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Pinout
DC+Rect
4,5
DC+Inv
6,7
D27
D32
D34
D36
T12
T14
T16
D15
D13
D11
G12
S12
G14
S14
G16
20
21
26
27
23
S16
ACIn1
ACIn2
ACIn3
24
28
29
30
19
22
Br
Ph1
Ph2
Ph3
31
25
T27
T11
T13
T15
D14
D12
D16
D31
D33
D35
G27
G11
S11
G13
S13
G15
S15
17
18
1
14
15
11
12
Rt
Therm1 Therm2
DC-Rect
2,3
DC-Br
32
DC-1
16
DC-2
13
DC-3
10
8
9
D27 cathode connected from +INV to +RECT
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
35 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
1200 V
35 A
D15, D16
T27
IGBT
1200 V
1600 V
35 A
7 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
Rectifier
1600 V
28 A
Rectifier Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
28
21 Sep. 2021 / Revision 3
V23990-P580-A47-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Updated Inverter Switch, Inverter Diode, Brake Switch and
Brake Diode characteristic values
V23990-P580-A47-PM-D3-14
21 Sep. 2021
Inverter and Brake dynamic characteristics
Updated datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
21 Sep. 2021 / Revision 3
相关型号：
V23990-P580-C418-PM
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明