V23990-P580-C418-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P580-C418-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总24页 (文件大小：1641K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P580-*4*-PM
datasheet
flow PIM 1
1200 V / 35 A
Features
flow 1 housing
17 mm housing
Press-fit pin
/ Solder pin
● Three-phase rectifier, optional BRC, Inverter, NTC
● Very compact housing, easy to route
● IGBT4 / EmCon4 technology for low saturation
losses and improved EMC behaviour
12 mm housing
Press-fit pin
/ Solder pin
Target Applications
● Industrial drives
● Embedded drives
Schematic
Types
● V23990-P580-A41-PM
● V23990-P580-A41Y-PM
● V23990-P580-A418-PM
● V23990-P580-A418Y-PM
● V23990-P580-C41-PM
● V23990-P580-C41Y-PM
● V23990-P580-C418-PM
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
35
V
A
I FSM
Surge (non-repetitive) forward current
280
390
A
t p = 10 ms
50Hz half sine wave
I2t-value
I 2
t
A2s
P tot
T j = T jmax
T s = 80 °C
Power dissipation
56
W
T jmax
Maximum Junction Temperature
150
°C
Inverter Switch
V CE
I C
Collector-emitter breakdown voltage
1200
35
V
A
DC collector current
I CRM
t p limited by T jmax
V CE ≤ 1200 V, T j ≤ T op max
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
105
105
114
±20
A
A
P tot
V GE
T s = 80 °C
W
V
Gate-emitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
35
V
A
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
70
A
T s = 80 °C
80
W
°C
T jmax
Maximum Junction Temperature
175
Brake Switch
V CE
I C
Collector-emitter breakdown voltage
1200
25
V
A
DC collector current
I CRM
t p limited by T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
75
A
V CE ≤ 1200V, T j ≤ T op max
T j = T jmax
50
A
P tot
V GE
T s = 80 °C
94
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
Brake Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
10
V
A
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
20
A
T s = 80 °C
46
W
°C
T jmax
Maximum Junction Temperature
175
Thermal Properties
Storage temperature
T stg
T op
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Isolation Properties
t
t
= 2 s
DC Voltage*
AC Voltage
6000
2500
V
V is
Isolation voltage
= 1 min
V
Creepage distance
Clearance
min 12,7
7,91 / 7,96
min 12,7
>200
mm
mm
mm
12 mm housing solder pin / press-fit pin
17 mm housing
Comparative tracking index
* 100 % tested in production
CTI
copyright Vincotech
2
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Rectifier Diode
25
125
25
125
25
125
25
0,8
1,16
1,13
0,90
0,78
8
1,6
V F
V to
r t
Forward voltage
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
11
0,02
2
I r
1600
150
λpaste = 3,4 W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
1,25
K/W
Inverter Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0012
35
25
5
5,8
6,5
2,3
V
V
25
125
1,6
1,95
2,39
15
0
1200
0
25
25
0,5
mA
nA
Ω
20
300
none
25
125
25
125
25
125
25
125
25
125
25
92
92
18
Rise time
23
ns
213
274
75
105
1,62
2,49
1,81
2,82
t d(off)
t f
Turn-off delay time
R goff = 16 Ω
R gon = 16 Ω
±15
600
35
Fall time
E on
Turn-on energy loss
mWs
E off
Turn-off energy loss
125
C ies
Input capacitance
1950
155
C oss
C rss
Output capacitance
f
= 1 MHz
0
25
25
pF
Reverse transfer capacitance
115
λpaste = 3,4 W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
0,83
K/W
Inverter Diode
25
125
25
125
25
125
25
125
25
125
25
1
1,83
1,80
69
79
150
2,2
V F
I RRM
Diode forward voltage
35
35
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
277
3,93
7,47
4100
2080
1,69
3,31
Q rr
R gon = 16 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
600
µC
( di rf/dt )max
E rec
A/µs
mWs
125
λpaste = 3,4 W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
1,19
K/W
copyright Vincotech
3
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A]
V GS [V]
T j [°C]
Min
Max
V DS [V] I D [A]
Brake Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,00085
25
25
5
5,8
6,5
2,2
V
V
25
125
1,6
1,86
2,31
15
0
1200
0
25
25
0,005
200
mA
nA
Ω
20
none
25
125
25
125
25
125
25
125
25
125
25
127
129
36
Rise time
42
ns
232
276
74
112
1,81
2,42
1,37
2,19
t d(off)
t f
Turn-off delay time
R goff = 32 Ω
R gon = 32 Ω
15
600
25
Fall time
E on
Turn-on energy loss
Turn-off energy loss
Input capacitance
mWs
pF
E off
C ies
C oss
C rss
Q G
125
1430
115
85
Output capacitance
f
= 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
960
25
10
25
120
nC
λpaste = 3,4 W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
1,01
K/W
Brake Diode
25
125
1,35
1,85
1,76
2,05
2,7
V F
Diode forward voltage
V
μA
I r
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
25
25
125
25
125
25
125
25
125
25
125
10
12
I RRM
A
396
624
1,55
3,03
36
32
0,63
1,30
t rr
Q rr
ns
R gon = 32 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
15
µC
( di rf/dt )max
E rec
A/µs
mWs
λpaste = 3,4 W/mK
(PSX)
R th(j-s)
Thermal resistance junction to sink
2,07
K/W
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
25
25
25
25
25
22000
Ω
%
-5
5
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
3950
3996
B (25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
4
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
flow 1 housing
figure 1.
IGBT
figure 2.
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
100
100
80
60
40
80
60
40
20
20
0
0
0
V
CE (V)
V
CE (V)
0
1
2
3
4
5
1
2
3
4
5
At
At
t p
=
t p =
250
25
μs
°C
250
150
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
35
30
25
20
15
10
5
60
50
40
30
Tj = Tjmax-25°C
20
Tj = Tjmax-25°C
Tj = 25°C
10
Tj = 25°C
0
0
0
V
GE (V)
VF (V)
3,0
2
4
6
8
10
12
0,0
0,5
1,0
1,5
2,0
2,5
At
At
t p
=
t p =
250
10
μs
250
μs
V CE
=
V
copyright Vincotech
5
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eoff High T
Eon High T
Eon High T
Eon Low T
Eoff Low T
Eon Low T
Eoff High T
Eoff Low T
0
10
20
30
40
50
60
R G ( Ω ) 70
0
10
20
30
40
50
60
I C (A) 70
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/150
600
±15
16
25/150
600
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
35
V
=
I C =
Ω
Ω
A
=
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
4,5
4,5
Erec
4
4
Tj = Tjmax -25°C
3,5
3,5
Tj = Tjmax -25°C
3
2,5
2
3
Erec
2,5
2
Tj = 25°C
Erec
1,5
1
1,5
Tj = 25°C
Erec
1
0,5
0
0,5
0
0
10
20
30
40
50
60 I C (A)
70
R G ( Ω )
70
0
10
20
30
40
50
60
With an inductive load at
With an inductive load at
T j =
T j =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
±15
16
V
±15
35
V
=
I C =
Ω
A
copyright Vincotech
6
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdon
tdoff
tf
tf
tr
0,1
0,1
tdon
tr
0,01
0,01
0,001
0,001
I
C (A)
R
G ( Ω )
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
With an inductive load at
With an inductive load at
T j =
T j =
150
600
±15
16
°C
V
150
600
±15
35
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
16
figure 11.
FWD
figure 12.
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon
)
0,3
0,8
trr
Tj = Tjmax -25°C
trr
0,25
0,2
0,6
0,4
0,2
Tj = Tjmax -25°C
trr
Tj = 25°C
0,15
0,1
Tj = 25°C
trr
0,05
0
0
0
10
20
30
40
50
60
70
R g on ( Ω )
I
C (A)
0
10
20
30
40
50
60
70
At
At
T j =
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
35
A
=
V GE =
Ω
±15
V
copyright Vincotech
7
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
10
8,4
7,2
6
Qrr
Qrr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
8
6
4
2
0
4,8
3,6
2,4
1,2
Tj = 25°C
Tj = 25°C
Qrr
Qrr
0
0
10
20
30
40
50
60
70
R g on ( Ω)
I C (A)
0
10
20
30
40
50
60
70
At
T j =
At
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V CE
V GE
R gon
=
V
A
V
=
±15
16
V
35
=
V GE =
Ω
±15
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
100
150
IRRM
Tj = Tjmax -25°C
IRRM
125
100
75
80
Tj = 25°C
60
40
20
0
Tj = Tjmax - 25°C
50
Tj = 25°C
IRRM
25
IRRM
0
0
I C (A)
R gon ( Ω )
70
0
10
20
30
40
50
60
70
10
20
30
40
50
60
At
T j =
At
T j =
V R =
I F =
25/150
600
°C
25/150
600
°C
V CE
V GE
R gon
=
V
V
Ω
V
A
V
=
±15
16
35
=
V GE =
±15
copyright Vincotech
8
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
4500
9000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
8000
7000
6000
5000
4000
3000
2000
1000
0
4000
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
R gon ( Ω )
I
C (A)
0
10
20
30
40
50
60
70
At
T j =
At
T j =
V R =
I F =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
=
±15
16
V
35
A
=
V GE =
Ω
±15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
100
101
100
10-1
D = 0,5
0,2
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
102
100
101
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,83
K/W
1,19
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
1,05E-01 8,25E-01
3,41E-01 1,19E-01
2,63E-01 4,37E-02
8,23E-02 7,94E-03
3,86E-02 7,50E-04
R (K/W) Tau (s)
6,30E-02 2,93E+00
1,30E-01 4,06E-01
5,50E-01 7,36E-02
2,26E-01 2,16E-02
1,15E-01 4,46E-03
9,49E-02 5,82E-04
8,50E-03 2,11E-04
copyright Vincotech
9
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
225
200
175
150
125
100
75
60
50
40
30
20
10
0
50
25
0
o C)
T s (
o C)
0
50
100
150
200
T s
(
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
150
125
100
75
60
50
40
30
20
10
0
50
25
0
0
50
100
150
200
T s
(
o C)
T s (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
10
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 25.
IGBT
figure 26.
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
V GE = f(Q G)
16
14
12
103
10uS
240 V
960 V
10
8
102
100uS
1mS
101
6
10mS
4
100mS
DC
100
2
0
10-1
0
40
80
120
160
200
240
103
Q g (nC)
100
102
101
VCE (V)
At
At
D =
single pulse
I C
=
35
A
T s =
80
ºC
V GE
=
±15
T jmax
V
T j =
figure 27.
IGBT
figure 28.
IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
t sc = f(V GE
)
I C(sc) = f(V GE)
50
180
160
140
120
100
80
40
30
20
10
60
40
20
0
0
10
12
14
16
18
20
10
11
12
13
14
15
16
17
18
V GE(V)
VGE (V)
At
At
V CE
=
1200
175
V
V CE
≤
1200
175
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
11
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Inverter Characteristics
figure 29.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
80
IC MAX
70
60
50
40
30
20
10
0
0
200
400
600
800
1000
1200
1400
VCE (V)
At
T j =
T jmax-25
ºC
copyright Vincotech
12
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Brake Characteristics
figure 1.
IGBT
figure 2.
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
40
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
t p
=
t p =
250
25
μs
°C
250
150
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
25
35
30
25
20
15
20
15
10
5
Tj = Tjmax-25°C
Tj = 25°C
10
Tj = Tjmax-25°C
5
Tj = 25°C
0
0
0
2
4
6
8
10
VGE (V)
0
0,5
1
1,5
2
2,5
3
3,5
VF (V)
At
At
t p
=
t p
=
250
10
μs
V
250
μs
V CE
=
copyright Vincotech
13
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Brake Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
7
7
Eon
Eon
6
6
Tj = Tjmax -25°C
5
5
4
3
2
1
0
Eon
Eon
Tj = Tjmax -25°C
4
3
2
1
Eoff
Eoff
Eoff
Eoff
Tj = 25°C
Tj = 25°C
0
0
25
50
75
100
125
150
)
R G
(
Ω
0
10
20
30
40
50
I
C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/150
600
±15
32
°C
V
25/150
600
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
25
V
=
I C =
Ω
Ω
A
=
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
1,6
1,6
Erec
Tj = Tjmax - 25°C
Tj = Tjmax -25°C
1,2
0,8
1,2
Erec
Erec
0,8
Tj = 25°C
Tj = 25°C
Erec
0,4
0,0
0,4
0,0
0
25
50
75
100
125
150
R G ( Ω )
I C (A)
0
10
20
30
40
50
With an inductive load at
With an inductive load at
T j =
T j =
25/150
600
°C
V
25/150
600
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
±15
32
V
±15
25
V
=
I C =
Ω
A
copyright Vincotech
14
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Brake Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdon
tdoff
tdon
tf
tr
0,1
0,1
tf
tr
0,01
0,01
0,001
0,001
R G ( Ω )
150
I C (A)
0
10
20
30
40
50
0
25
50
75
100
125
With an inductive load at
With an inductive load at
T j =
T j =
25/150
600
±15
32
°C
V
25/150
600
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
25
V
=
I C =
Ω
Ω
A
=
32
figure 11.
IGBT
figure 12.
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
D = 0,5
0,2
10-1
0,2
0,1
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
1
10-5
10-4
10-3
10-2
10-1
100
101
1
t p (s)
t p (s)
t p / T
t p / T
At
R th(j-s)
D =
At
R th(j-s)
D =
=
=
1,01
K/W
2,07
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
8,44E-02 1,03E+00
2,46E-01 1,79E-01
4,48E-01 5,38E-02
1,38E-01 1,04E-02
5,48E-02 1,66E-03
3,85E-02 8,73E-04
R (K/W) Tau (s)
5,09E-02 4,26E+00
1,55E-01 5,03E-01
7,75E-01 7,89E-02
5,33E-01 2,68E-02
3,54E-01 5,03E-03
1,97E-01 9,09E-04
copyright Vincotech
15
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Brake Characteristics
figure 13.
IGBT
figure 14.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
175
150
125
100
75
50
40
30
20
10
0
50
25
0
o C)
T s (
o C)
0
50
100
150
200
T s
(
0
50
100
150
200
At
T j =
At
T j =
175
ºC
175
15
ºC
V
V GE
=
figure 15.
Power dissipation as a
FWD
figure 16.
FWD
Forward current as a
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
90
80
70
60
50
40
30
20
10
0
15
12
9
6
3
0
o C)
T s (
o C)
0
50
100
150
200
T s
(
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
16
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Rectifier Diode
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
90
80
70
60
50
40
30
100
10-1
10-2
10-3
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
Tj = Tjmax-25°C
20
10
0
Tj = 25°C
0,0
0,3
0,5
0,8
1,0
1,3
1,5
1,8
t p (s)
102
VF (V)
10-5
10-4
10-3
10-2
10-1
100
101
t
p / T
At
At
R th(j-s) =
D =
t p
=
250
μs
1,25
K/W
Diode thermal model values
R (K/W) Tau (s)
8,00E-02 5,22E+00
1,56E-01 4,18E-01
6,95E-01 8,82E-02
2,23E-01 3,07E-02
9,97E-02 5,99E-03
figure 3.
Power dissipation as a
Rectifier Diode
figure 4.
Rectifier Diode
Forward current as a
function of heatsink temperature
I F = f(T s)
function of heatsink temperature
P tot = f(T s)
160
140
120
100
80
50
40
30
20
10
0
60
40
20
0
0
25
50
75
100
125
150
T s
(
o C)
T s (
o C)
125
0
25
50
75
100
150
At
T j =
At
T j =
150
ºC
150
ºC
copyright Vincotech
17
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T )
NTC-typical temperature characteristic
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
25
45
65
85
105
125
T (°C)
copyright Vincotech
18
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Switching Definitions Inverter
General conditions
T j
=
=
=
150 °C
16 Ω
16 Ω
flow 1 housing
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
140
350
%
%
IC
120
300
tdoff
VCE
100
250
200
150
VCE 90%
IC
VGE 90%
80
60
40
VCE
100
tEoff
20
0
VGE
tdon
IC 1%
50
IC10%
VGE
VCE 3%
VGE10%
-20
-40
0
tEon
-50
-0,4
-0,2
0
0,2
0,4
0,6
0,8
2,9
3
3,1
3,2
3,3
3,4
3,5
time(us)
time (us)
V GE (0%) =
-15
15
V
V GE (0%) =
-15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
600
35
V
600
35
V
A
A
t doff
=
=
0,27
0,54
μs
μs
t don
=
=
0,09
0,31
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
140
325
%
%
Ic
120
275
225
175
fitted
VCE
IC
100
IC 90%
80
IC
60%
60
125
40
20
0
IC 40%
IC90%
tr
75
25
IC10%
IC10%
VCE
tf
-20
-25
0,1
0,2
0,3
0,4
0,5
0,6
3
3,1
3,2
3,3
3,4
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
600
35
V
V C (100%) =
I C (100%) =
t r =
600
35
V
A
A
0,11
μs
0,02
μs
copyright Vincotech
19
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Switching Definitions Inverter
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
120
225
%
%
Eoff
Pon
100
Poff
175
125
80
60
40
20
Eon
75
25
VGE 90%
VCE
3%
VGE 10%
0
tEoff
tEon
IC
1%
-25
-20
-0,1
3
3,1
3,2
3,3
3,4
0,1
0,3
0,5
0,7
time (us)
time(us)
P off (100%) =
E off (100%) =
21,01
2,82
0,54
kW
mJ
μs
P on (100%) =
E on (100%) =
21,01
2,49
0,31
kW
mJ
μs
t E off
=
t E on =
figure 7.
IGBT
Turn-off Switching Waveforms & definition of t rr
120
%
Id
80
trr
40
Vd
0
IRRM10%
-40
fitted
-80
-120
-160
IRRM90%
-200
-240
IRRM100%
3
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
V d (100%) =
I d (100%) =
600
35
V
A
I RRM (100%) =
t rr
-79
0,28
A
=
μs
copyright Vincotech
20
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Switching Definitions Inverter
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
120
%
%
Erec
Id
Qrr
100
100
tQrr
50
80
tErec
0
60
40
20
0
-50
-100
-150
-200
-250
Prec
-20
3
3,2
3,4
3,6
3,8
4
4,2
3
3,5
4
4,5
5
time(us)
time(us)
I d (100%) =
Q rr (100%) =
35
A
P rec (100%) =
E rec (100%) =
21,01
3,31
1,00
kW
mJ
μs
7,47
1,00
μC
μs
t Q rr
=
t E rec =
copyright Vincotech
21
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 17mm housing solder pins
Ordering Code
V23990-P580-A41-PM
with thermal paste 17mm housing solder pins
without thermal paste 17mm housing press-fit pins
with thermal paste 17mm housing press-fit pins
without thermal paste 12mm housing solder pins
with thermal paste 12mm housing solder pins
without thermal paste 12mm housing press-fit pins
with thermal paste 12mm housing press-fit pins
V23990-P580-A41-/3/-PM
V23990-P580-A41Y-PM
V23990-P580-A41Y-/3/-PM
V23990-P580-A418-PM
V23990-P580-A418-/3/-PM
V23990-P580-A418Y-PM
V23990-P580-A418Y-/3/-PM
V23990-P580-C41-PM
without thermal paste 17mm housing solder pins without brake
with thermal paste 17mm housing solder pins without brake
V23990-P580-C41-/3/-PM
without thermal paste 17mm housing press-fit pins without brake
with thermal paste 17mm housing press-fit pins without brake
without thermal paste 12mm housing press-fit pins without brake
with thermal paste 12mm housing press-fit pins without brake
V23990-P580-C41Y-PM
V23990-P580-C41Y-/3/-PM
V23990-P580-C418Y-PM
V23990-P580-C418Y-/3/-PM
Name&Ver
NNNNNNNVV
Lot number
VIN Date code
VIN WWYY
Type&Ver
TTTTTTTVV
UL
Lot
Serial
Text
UL
LLLLL
SSSS
Serial
Date code
Datamatrix
LLLLL
SSSS
WWYY
Outline
Pin table
module
P589-C41
P589-C418
whitout pins
Pin
1
X
Y
0
Function
BrG
1, 31, 32
1, 31, 32
52,55
2
47,7
44,8
37,8
37,8
35
0
0
DC-
DC-
DC+
DC+
Inv+
Inv+
R1
3
12 mm solder pin
4
0
5
2,8
0
6
7
35
2,8
0
8
28
9
25,2
22,4
19,6
16,8
14
0
R2
12 mm press-fit pin
17 mm solder pin
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
N6
G6
S6
0
0
0
N4
G4
S4
11,2
8,4
0
0
5,6
0
N2
G2
S2
2,8
0
0
0
0
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
28,5
25
16,9
8,6
2,8
U
2,8
G1
S1
7,5
17 mm press-fit pin
14,5
17,3
22
V
G3
S3
29
W
31,8
36,5
43,5
52,55
52,55
52,55
52,55
G5
S5
L1
L2
L3
BrC
BrE
copyright Vincotech
22
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1,T2,T3,T4,T5,T6
IGBT
FWD
1200 V
1200 V
1200 V
1200 V
1600 V
35 A
35 A
25 A
10 A
35 A
Inverter Switch
Inverter Diode
Brake Switch
Brake Diode
D1,D2,D3,D4,D5,D6
T7
IGBT
D7
D8,D9,D10,D11,D12,D13
NTC
FWD
Rectifier
NTC
Rectifier Diode
Thermistor
copyright Vincotech
23
18 Dec. 2018 / Revision 9
V23990-P580-*4*-PM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990-P580-x4x-D9-14
18 Dec. 2018
Isolation Voltage updated
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
24
18 Dec. 2018 / Revision 9
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