V23990-K209-A-/0B/-PM [VINCOTECH]
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VINCOTECH 
V23990-K209-A-PM
datasheet
MiniSKiiP® 1 PIM
1200V / 8A
MiniSKiiP® 1 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT3 technology
Target Applications
Schematic
● Industrial drives
Types
● V23990-K209-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
29
V
A
A
Th=80°C
Tj=Tjmax
IFSM
Surge forward current
220
240
46
tp=10ms
Tj=25°C
Th=80°C
half sine wave
I2t-value
I2t
A2s
W
Ptot
Tj=Tjmax
Power dissipation
Maximum Junction Temperature
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
1200
18
V
A
Th=80°C
Th=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
24
A
62
W
V
VGE
Gate-emitter peak voltage
Short circuit ratings
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
900
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 3
V23990-K209-A-PM
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
12
V
A
Th=80°C
Th=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
29
A
28
W
°C
Tjmax
Maximum Junction Temperature
150
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 3
V23990-K209-A-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,51
1,42
0,86
0,79
0,03
0,03
VF
Vto
rt
25
25
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢀ
0,05
Ir
1500
mA
Thermal grease
RthJH
thickness≤50um
λ =1 W/mK
K/W
Thermal resistance chip to heatsink
1,5
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
5,6
1,9
VGE(th) VCE=VGE
0,00015
8
V
V
1,1
1,75
1,85
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,03
300
1200
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
46
44
21
Rise time
27
ns
317
385
96
174
0,65
0,82
0,54
0,82
td(off)
tf
Turn-off delay time
Rgoff=54 ꢀ
Rgon=54 ꢀ
±15
600
8
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
551
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
40
Reverse transfer capacitance
Gate charge
17
±15
58
nC
Thermal grease
thickness≤50um
λ =1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink
1,5
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,55
1,57
7,8
1,77
VF
IRRM
trr
5
8
V
A
Peak reverse recovery current
Reverse recovery time
8,8
434
610
1,16
1,77
75
38
0,48
0,75
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
diF/dt=tbd A/us
0
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ =1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink
2,5
PTC
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
1000
ꢀ
%
∆R/R R100=1670 ꢀ
R
-3
3
1670,313
7,635*10-3
1,731*10-5
ꢀ
A-value
B(25/50) Tol. %
B(25/100) Tol. %
1/K
1/K²
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
25
25
20
15
10
5
20
15
10
5
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
ꢁs
250
125
ꢁs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
12
20
16
12
8
9
6
3
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
4
Tj = Tjmax-25°C
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
3
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
4
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2
1,6
1,2
0,8
0,4
0
1,5
1,2
0,9
0,6
0,3
0
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff Low T
Eoff High T
Eoff Low T
I C (A)
R G ( Ω )
0
3
6
9
12
15
0
40
80
120
160
200
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
81
600
±15
8
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
81
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1
0,8
0,6
0,4
0,2
0
Erec
Erec
Tj = Tjmax -25°C
0,8
Tj = Tjmax -25°C
Erec
0,6
Tj = 25°C
Erec
Tj = 25°C
0,4
0,2
0
I C (A)
R G ( Ω )
200
0
3
6
9
12
15
0
40
80
120
160
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
81
600
±15
8
V
Rgon
=
ꢀ
copyright Vincotech
5
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdoff
tf
tf
tdon
tr
0,1
0,1
tdon
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
200
0
2
4
6
8
10
12
14
16
0
40
80
120
160
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
600
±15
81
°C
V
125
600
±15
8
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
81
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,8
0,6
0,4
0,2
0
0,8
trr
Tj = Tjmax -25°C
trr
Tj = Tjmax -25°C
0,6
0,4
0,2
trr
trr
Tj = 25°C
Tj = 25°C
0
0
40
80
120
160
200
I C (A)
R g on
(
Ω
)
0
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
600
25/125
600
8
=
=
VR =
IF =
±15
V
Rgon
=
VGE =
81
ꢀ
±15
copyright Vincotech
6
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2,5
2
Tj = Tjmax -25°C
Qrr
Qrr
2
1,6
1,2
0,8
0,4
Tj = Tjmax -25°C
Qrr
1,5
1
Qrr
Tj = 25°C
Tj = 25°C
0,5
0
0
0
I C (A)
R g on ( Ω)
0
4
8
12
16
40
80
120
160
200
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
600
25/125
600
8
=
VR =
=
IF =
±15
V
Rgon
=
VGE =
81
ꢀ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
12
10
Tj = Tjmax -25°C
IRRM
8
6
4
2
0
Tj = 25°C
IRRM
9
6
3
Tj = Tjmax - 25°C
IRRM
IRRM
Tj = 25°C
0
0
I C (A)
R gon ( Ω )
200
40
80
120
160
0
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
600
25/125
600
8
=
=
VR =
IF =
±15
V
Rgon
=
VGE =
81
ꢀ
±15
copyright Vincotech
7
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
400
500
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
400
300
200
100
0
300
200
100
0
I C (A)
R gon ( Ω )
200
0
4
8
12
16
0
40
80
120
160
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
600
25/125
=
=
VR =
600
8
IF =
VGE
±15
V
Rgon
=
=
81
ꢀ
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,1
0,05
0,02
0,01
0,005
0.000
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
1,5
tp / T
2,5
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,06
Tau (s)
1,0E+01
5,8E-01
9,9E-02
1,8E-02
2,8E-03
2,9E-04
R (K/W)
0,05
Tau (s)
9,0E+00
6,6E-01
1,2E-01
2,9E-02
4,8E-03
6,9E-04
0,18
0,25
0,56
0,88
0,46
0,73
0,19
0,33
0,10
0,26
copyright Vincotech
8
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
120
100
80
60
40
20
0
25
20
15
10
5
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
60
45
30
15
0
20
16
12
8
4
0
T h
(
o C)
T h (
o C)
120
0
30
60
90
120
150
0
30
60
90
150
At
At
Tj =
Tj =
150
°C
150
°C
copyright Vincotech
9
Revision: 3
V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
20
)
103
17,5
15
100uS
240V
1mS
102
101
100
960V
12,5
10
10mS
100mS
7,5
5
DC
2,5
0
0
10-1
100
12,5
25
37,5
50
62,5
75
103
101
102
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
8
A
single pulse
80
ºC
VGE
Tj =
=
±15
V
Tjmax
ºC
copyright Vincotech
10
Revision: 3
V23990-K209-A-PM
datasheet
D8,D9,D10,D11,D12,D13
Figure 1
Diode
Figure 2
Diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
10-2
40
30
20
D = 0,5
0,2
Tj = Tjmax-25°C
0,1
10
0,05
0,02
0,01
0,005
0.000
Tj = 25°C
0
0
0,5
1
1,5
2
VF (V)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
1
At
At
tp =
tp / T
1,5
250
ꢁs
D =
RthJH
=
K/W
Figure 3
Power dissipation as a
Diode
Figure 4
Forward current as a
Diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
80
60
40
20
0
50
40
30
20
10
0
T h
(
o C)
T h (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
At
At
Tj =
Tj =
150
ºC
150
ºC
copyright Vincotech
11
Revision: 3
V23990-K209-A-PM
datasheet
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
copyright Vincotech
12
Revision: 3
V23990-K209-A-PM
datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
125 °C
81 Ω
Rgon
Rgoff
81 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
250
%
125
tEoff
%
VCE
IC
200
150
100
VCE 90%
VGE 90%
75
50
25
0
VGE
IC
VCE
100
VGE
tdoff
tdon
50
IC 1%
VCE 3%
IC10%
VGE10%
0
tEon
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
2,5
2,6
2,7
2,8
2,9
3
3,1
time (us)
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
600
8
V
600
8
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,39
0,64
ꢁs
ꢁs
0,04
0,48
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
120
250
%
fitted
%
VCE
IC
100
Ic
200
IC 90%
80
150
100
IC
60
40
20
0
60%
IC90%
VCE
IC 40%
tr
50
IC 10%
IC10%
0
tf
-50
-20
2,7
2,75
2,8
2,85
2,9
0,1
0,2
0,3
0,4
0,5
0,6
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
8
V
600
8
V
A
A
0,17
ꢁs
0,03
ꢁs
copyright Vincotech
13
Revision: 3
V23990-K209-A-PM
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
Pon
%
%
Eoff
100
150
IC
1%
Poff
75
50
Eon
100
50
25
Uce3%
VGE 90%
Uge10%
0
tEon
0
tEoff
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
2,5
2,6
2,7
2,8
2,9
3
3,1
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
4,79
0,82
0,64
kW
mJ
ꢁs
4,79
0,82
0,48
kW
mJ
ꢁs
tEoff
=
tEon =
Figure 7
Output inverter IGBT
Turn-off Switching Waveforms & definition of trr
150
Id
100
%
trr
50
Vd
fitted
IRRM 10%
0
-50
-100
-150
IRRM 90%
IRRM 100%
2,6
2,8
3
3,2
3,4
3,6
time(us)
Vd (100%) =
Id (100%) =
600
8
V
A
IRRM (100%) =
9
A
trr
=
0,61
ꢁs
copyright Vincotech
14
Revision: 3
V23990-K209-A-PM
datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
%
125
%
Qrr
Erec
Id
100
100
75
50
25
0
tQrr
tErec
50
0
-50
Prec
-100
-150
-25
2,6
2,8
3
3,2
3,4
3,6
3,8
4
2,6
2,8
3
3,2
3,4
3,6
3,8
time(us)
4
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
8
A
4,79
kW
mJ
ꢁs
Qrr (100%) =
1,77
1,08
ꢁC
ꢁs
0,75
1,08
tQrr
=
tErec =
copyright Vincotech
15
Revision: 3
V23990-K209-A-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K12-T-PM)
V23990-K209-A-/0A/-PM
K209A
K209A
K209A
K209A
K209A-/0A/
K209A-/1A/
K209A-/0B/
K209A-/1B/
with std lid (black V23990-K12-T-PM) and P12 V23990-K209-A-/1A/-PM
with thin lid (white V23990-K13-T-PM) V23990-K209-A-/0B/-PM
with thin lid (white V23990-K13-T-PM) and P12 V23990-K209-A-/1B/-PM
Outline
Pinout
copyright Vincotech
16
Revision: 3
V23990-K209-A-PM
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
Revision: 3
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