V23990-K209-A40-0B-PM [VINCOTECH]
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型号: | V23990-K209-A40-0B-PM |
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描述: | Trench Fieldstop IGBT4 technology 双极性晶体管 |
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V23990-K209-A40-PM
MiniSKiiP® 1 PIM
1200V / 8A
MiniSKiiP® 1 housing
Features
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
Target Applications
Schematic
● Industrial Motor Drives
Types
● V23990-K209-A40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
1600
29
V
A
A
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
IFSM
Surge forward current
220
240
46
Tj=25°C
Th=80°C
I2t-value
I2t
A2s
W
Ptot
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
1200
14
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
24
A
52
W
V
VGE
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright by Vincotech
1
Revision: 4.2
V23990-K209-A40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
13
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
24
A
38
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12.7
min 12.7
mm
mm
Copyright by Vincotech
2
Revision: 4.2
V23990-K209-A40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
D8,D9,D10,D11,D12,D13
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,51
1,42
0,86
0,79
0,03
0,03
VF
Vto
rt
25
25
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Ǒ
0,05
Ir
1500
mA
Thermal grease
RthJH
thickness≤50۷m
λ=1 W/mK
K/W
Thermal resistance chip to heatsink per chip
1,5
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,5
VGE(th) VCE=VGE
0,0003
8
V
V
1,6
2,01
2,38
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,06
180
1200
0
mA
nA
Ǒ
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
115
126
33
Rise time
39
ns
225
290
89
130
0,56
0,88
0,48
0,77
td(off)
tf
Turn-off delay time
Rgoff=64Ǒ
Rgon=64Ǒ
±15
600
8
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
490
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
30
Vcc=960V
15
8
53
nC
Thermal grease
thickness≤50۷m
λ=1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,84
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,37
2,28
4,49
6,2
362
574
0,61
1,47
31
2,9
VF
IRRM
trr
8
8
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=64Ǒ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
22
0,24
0,62
Erec
Thermal grease
thickness≤50۷m
λ=1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
2,53
PTC
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
Ǒ
%
∆R/R R100=1670 Ǒ
R
-3
3
1670,313
7,635*10-3
1,731*10-5
Ǒ
A-value
B(25/50) Tol. %
B(25/100) Tol. %
1/K
1/K²
B-value
Vincotech NTC Reference
E
Copyright by Vincotech
3
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
20
20
16
12
8
16
12
8
4
4
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
۷s
250
150
۷s
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
9
24
20
16
12
7,5
6
4,5
3
Tj = Tjmax-25°C
8
4
0
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
1,5
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
0,8
1,6
2,4
3,2
4
At
At
tp =
tp =
250
10
۷s
250
۷s
VCE
=
V
Copyright by Vincotech
4
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2
1,5
1
2
1,5
1
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
0,5
0,5
0
0
I C (A)
R G ( Ω )
0
3
6
9
12
15
18
0
50
100
150
200
250
300
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
64
600
±15
8
V
V
A
V
Rgon
Rgoff
=
=
Ǒ
Ǒ
64
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,9
0,9
0,75
0,6
Erec
0,75
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,6
Erec
0,45
0,3
0,15
0
0,45
0,3
Tj = 25°C
Erec
Tj = 25°C
Erec
0,15
0
I C (A)
R G ( Ω )
300
0
3
6
9
12
15
0
50
100
150
200
250
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
600
°C
V
25/150
600
±15
8
°C
V
V
A
=
=
=
=
±15
V
Rgon
=
64
Ǒ
Copyright by Vincotech
5
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdoff
tdon
tdon
tf
tf
tr
0,1
0,1
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
300
0
3
6
9
12
15
0
50
100
150
200
250
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
64
°C
V
150
600
±15
8
°C
=
=
=
=
V
V
A
V
Rgon
Rgoff
=
=
Ǒ
Ǒ
64
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
trr = f(Rgon
)
1
0,8
0,6
0,4
0,2
0
1
trr
trr
0,8
0,6
0,4
0,2
Tj = Tjmax -25°C
Tj = Tjmax -25°C
trr
trr
Tj = 25°C
Tj = 25°C
0
0
50
100
150
200
250
300
I C (A)
R g on ( Ω )
0
3
6
9
12
15
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
A
V
=
=
±15
V
Rgon
=
VGE =
64
Ǒ
±15
Copyright by Vincotech
6
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2
2
Qrr
1,6
1,6
1,2
0,8
0,4
Tj = Tjmax -25°C
Qrr
Tj = Tjmax -25°C
1,2
Qrr
0,8
Tj = 25°C
Tj = 25°C
Qrr
0,4
0
0
0
I C (A)
R g on ( Ω)
300
0
3
6
9
12
15
50
100
150
200
250
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
A
V
=
=
±15
V
Rgon
=
VGE =
64
Ǒ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
10
10
8
6
4
2
8
Tj = Tjmax -25°C
IRRM
6
IRRM
Tj = Tjmax - 25°C
IRRM
4
Tj = 25°C
IRRM
Tj = 25°C
2
0
0
0
I C (A)
R gon ( Ω )
300
50
100
150
200
250
0
3
6
9
12
15
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
=
=
V
A
V
±15
V
Rgon
=
VGE =
64
Ǒ
±15
Copyright by Vincotech
7
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
300
750
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIo/dtLow T
dIrec/dt
250
200
150
100
50
600
450
300
150
0
di0/dtHigh T
dIrec/dtHigh T
dIrec/dtLow T
0
I C (A)
R gon ( Ω )
300
0
3
6
9
12
15
0
50
100
150
200
250
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
°C
V
25/150
600
8
°C
V
A
V
=
=
±15
V
Rgon
=
VGE =
64
Ǒ
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
D = 0,5
0,2
0,1
0,2
0,1
10-1
10-1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
At
At
tp / T
1,84
tp / T
2,53
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,05
Tau (s)
4,8E+00
5,9E-01
1,2E-01
3,8E-02
8,5E-03
1,7E-03
R (C/W)
0,06
Tau (s)
9,0E+00
4,4E-01
7,9E-02
1,2E-02
1,4E-03
2,9E-04
0,14
0,40
0,65
1,02
0,45
0,55
0,29
0,41
0,13
0,09
Copyright by Vincotech
8
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
100
80
60
40
20
0
16
12
8
4
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
80
60
40
20
0
20
16
12
8
4
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
Copyright by Vincotech
9
Revision: 4.2
V23990-K209-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
20
)
103
240V
10uS
16
12
8
100uS
102
101
100
1mS
960V
10mS
100mS
DC
4
0
0
10-1
100
20
40
60
80
103
101
102
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
8
A
single pulse
80
ºC
VGE
Tj =
=
±15
V
Tjmax
ºC
Copyright by Vincotech
10
Revision: 4.2
V23990-K209-A40-PM
D8,D9,D10,D11,D12,D13
Figure 1
Diode
Figure 2
Diode
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
50
40
30
100
20
D = 0,5
0,2
Tj = Tjmax-25°C
10-1
0,1
Tj = 25°C
0,05
0,02
0,01
0,005
0.000
10
0
10-2
10-5
0
0,5
1
1,5
2
2,5
VF (V)
t p (s)
10-4
10-3
10-2
10-1
100
1011
At
At
tp =
tp / T
1,5
250
۷s
D =
RthJH
=
K/W
Figure 3
Power dissipation as a
Diode
Figure 4
Forward current as a
Diode
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
80
60
40
20
0
50
40
30
20
10
0
T h
(
o C)
T h (
o C)
150
0
30
60
90
120
150
0
30
60
90
120
At
At
Tj =
Tj =
150
ºC
150
ºC
Copyright by Vincotech
11
Revision: 4.2
V23990-K209-A40-PM
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
Copyright by Vincotech
12
Revision: 4.2
V23990-K209-A40-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
64 Ω
Rgon
Rgoff
64 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
200
%
120
tdoff
%
IC
VCE
170
100
VGE 90%
140
VCE 90%
80
VCE
110
80
VGE
IC
60
40
20
0
VGE
tdon
50
tEoff
20
VCE 3%
VGE10%
IC10%
-10
-40
IC 1%
0,7
tEon
3,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
0,8
time (us)
2,8
2,9
3
3,1
3,3
3,4
3,5 3,6
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
600
8
V
600
8
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,29
0,69
۷s
۷s
0,13
0,42
۷s
۷s
Figure 3
Output inverter IGBT
VCE
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
120
200
%
fitted
%
IC
170
100
IC 90%
80
140
VCE
110
IC
60
40
20
0
60%
IC90%
80
tr
IC 40%
50
20
IC10%
Ic
IC10%
tf
-10
-40
-20
0,15
0,2
0,25
0,3
0,35
0,4
0,45
0,5
time (us)
3
3,1
3,2
3,3
3,4
3,5
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
V
600
V
8
A
8
A
0,13
۷s
0,04
۷s
Copyright by Vincotech
13
Revision: 4.2
V23990-K209-A40-PM
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
%
180
%
Pon
Eoff
Poff
100
140
100
60
80
60
40
Eon
20
VGE 90%
20
IC 1%
Uce3%
Uge10%
0
tEoff
tEon
-20
-20
2,88
2,98
3,08
3,18
3,28
3,38
3,48
3,58
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time(us)
time (us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
4,81
kW
mJ
۷s
4,81
kW
mJ
۷s
0,77
0,69
0,88
0,42
tEoff
=
tEon =
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
100
Id
%
80
60
trr
40
20
Vd
0
IRRM10%
-20
-40
-60
-80
fitted
IRRM90%
IRRM100%
-100
3
3,2
3,4
3,6
3,8
4
time(us)
Vd (100%) =
Id (100%) =
600
V
8
A
IRRM (100%) =
-6
A
trr
=
0,57
۷s
Copyright by Vincotech
14
Revision: 4.2
V23990-K209-A40-PM
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
%
120
%
Erec
Qrr
100
80
60
40
20
0
100
Id
tErec
tQrr
50
0
-50
Prec
-100
-20
3,05
3,3
3,55
3,8
4,05
4,3
4,55
time(us)
3,05
3,3
3,55
3,8
4,05
4,3
4,55
time(us)
Id (100%) =
P
rec (100%) =
8
A
4,81
0,62
1,18
kW
mJ
۷s
Qrr (100%) =
Erec (100%) =
tErec
1,47
1,18
۷C
۷s
tQrr
=
=
Copyright by Vincotech
15
Revision: 4.2
V23990-K209-A40-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K12-T-PM)
V23990-K209-A40-/0A/-PM
K209A40
K209A40
K209A40
K209A40
K209A40-/0A/
K209A40-/1A/
K209A40-/0B/
K209A40-/1B/
with std lid (black V23990-K12-T-PM) and P12 V23990-K209-A40-/1A/-PM
with thin lid (white V23990-K13-T-PM) V23990-K209-A40-/0B/-PM
with thin lid (white V23990-K13-T-PM) and P12 V23990-K209-A40-/1B/-PM
Outline
Pinout
Copyright by Vincotech
16
Revision: 4.2
V23990-K209-A40-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright by Vincotech
17
Revision: 4.2
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