80-M312PMA150M701-K420A82 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | 80-M312PMA150M701-K420A82 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总30页 (文件大小:9582K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
80-M312PMA150M01-K420A82
datasheet
MiniSKiiP® PIM 3
1200 V / 150 A
Features
MiniSKiiP® 3 16 mm housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Kelvin Emitter for improved switching performance
● Solder-free spring contact technology
● Built-in PTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M312PMA150M01-K420A82
Copyright Vincotech
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14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
186
300
411
±20
9,5
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
123
300
211
175
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
186
300
411
±20
9,5
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
90
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
168
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Rectifier Diode
VRRM
IFAV
IFSM
I2t
Peak repetitive reverse voltage
1600
85
V
A
Forward average current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Surge (non-repetitive) forward current
Surge current capability
890
3960
141
150
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Copyright Vincotech
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14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,02
150
25
5,4
6
6,6
V
V
25
1,57
1,8
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 600 V
15
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,23
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
415,6
431,4
433
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
95,4
tr
125
150
25
109,8
113,8
300,2
339,6
345,8
78,49
89,66
96,1
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
150
tf
125
150
25
ns
QrFWD=14,68 µC
QrFWD=22,62 µC
QrFWD=25,6 µC
21,13
27,11
28,88
9,81
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
13,01
14,02
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,8
1,9
2,1
40
VF
IR
Forward voltage
150
125
150
V
1,89
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,45
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
63,36
71,74
74,12
408,81
552,96
623,41
14,68
22,62
25,6
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=1573 A/µs
di/dt=980 A/µs
di/dt=1114 A/µs
Qr
Recovered charge
±15
600
150
125
150
25
μC
4,97
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
8,08
mWs
A/µs
9,18
335,06
235,2
218,31
(dirf/dt)max
125
150
Copyright Vincotech
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14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,02
150
25
5,4
6
6,6
V
V
25
1,57
1,8
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
320
VCC = 600 V
15
150
1000
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,23
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
142
144
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
145
68
tr
125
150
25
81
81
Rgon = 1 Ω
Rgoff = 1 Ω
426
td(off)
Turn-off delay time
Fall time
125
150
25
472
ns
490
0/15
700
147
68,92
91,64
97,54
20,67
25,61
26,7
10,6
14,07
14,91
tf
125
150
25
ns
QrFWD=12,09 µC
QrFWD=18,33 µC
QrFWD=20,6 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,82
1,96
1,96
2,1
40
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,57
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
55,27
64
IRRM
Peak recovery current
125
150
25
A
67,14
359,46
463,66
516,02
12,09
18,33
20,6
trr
Reverse recovery time
125
150
25
ns
di/dt=949 A/µs
di/dt=863 A/µs
di/dt=1320 A/µs
Qr
Recovered charge
0/15
700
147
125
150
25
μC
4,45
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
7,22
mWs
A/µs
8,27
350,37
227,05
211,77
(dirf/dt)max
125
150
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,04
0,972
0,956
1,1
VF
IR
Forward voltage
60
125
150
25
V
100
2
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
0,5
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
Maximum Current
Power dissipation constant
A-value
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
Copyright Vincotech
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14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,231
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,43E-02
4,70E-02
9,03E-02
1,43E-02
1,51E-02
1,35E+00
1,88E-01
4,69E-02
5,67E-03
8,02E-04
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,451
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,15E-02
6,77E-02
1,95E-01
1,06E-01
2,17E-02
1,90E-02
3,34E+00
7,23E-01
1,44E-01
5,27E-02
5,11E-03
6,41E-04
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,231
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,43E-02
4,70E-02
9,03E-02
1,43E-02
1,51E-02
1,35E+00
1,88E-01
4,69E-02
5,67E-03
8,02E-04
Copyright Vincotech
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80-M312PMA150M01-K420A82
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,567
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,57E-02
7,78E-02
1,72E-01
1,82E-01
4,06E-02
3,79E-02
6,41E+00
7,56E-01
1,48E-01
5,10E-02
4,40E-03
6,96E-04
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
50
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
0,75
1,00
1,25
1,50
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,498
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,89E-02
6,83E-02
1,51E-01
1,60E-01
3,57E-02
3,33E-02
6,41E+00
7,56E-01
1,48E-01
5,10E-02
4,40E-03
6,96E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
50
100
150
200
250
300
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
150 °C
600
±15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
12,5
10,0
7,5
Erec
Erec
Erec
Erec
Erec
5,0
5,0
Erec
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tr
tr
-1
10
-1
10
tf
tf
-2
10
-2
10
0
50
100
150
200
250
300
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
150
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0,0
0
50
100
150
200
250
300
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
50
100
150
200
250
300
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2250
2000
1750
1500
1250
1000
750
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
500
250
0
0
50
100
150
200
250
300
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
150 °C
600
±15
150
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
21
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
1
V
V
Ω
Ω
125 °C
150 °C
700
0/15
147
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
1
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
10
10
Erec
Erec
8
8
Erec
6
6
Erec
Erec
4
4
Erec
2
2
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
1
V
V
Ω
125 °C
150 °C
700
0/15
147
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
tr
td(on)
tr
tf
-1
10
-1
10
tf
-2
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
1
°C
V
150
700
0/15
147
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
1
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
1
V
V
Ω
125 °C
150 °C
700
0/15
147
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
1
V
V
Ω
125 °C
150 °C
700
0/15
147
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
1
V
V
Ω
125 °C
150 °C
700
0/15
147
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
24
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
3000
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
2500
2000
1500
1000
500
0
0
25
50
75
100
125
150
175
200
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
1
V
V
Ω
125 °C
150 °C
700
0/15
147
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
1
1
Ω
Copyright Vincotech
25
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
26
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
27
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M312PMA150M01-K420A82-/0A/
80-M312PMA150M01-K420A82-/0B/
80-M312PMA150M01-K420A82-/1A/
80-M312PMA150M01-K420A82-/1B/
80-M312PMA150M01-K420A82-/3A/
80-M312PMA150M01-K420A82-/3B/
80-M312PMA150M01-K420A82-/4A/
80-M312PMA150M01-K420A82-/4B/
80-M312PMA150M01-K420A82-/5A/
80-M312PMA150M01-K420A82-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (3,4 W/mK, PSX-P7, silicone-free)
With thin lid (2.8mm height) + thermal grease (3,4 W/mK, PSX-P7, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
-25,3
-6,4
-3,2
0
Function
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
-25,9
10,82
10,82
-32,82
-32,82
4,32
2,2
+B
B
15,83
15,83
15,83
15,83
15,83
15,83
G5
E5
W
8,74
2
11,94
8,74
B
3
B
4
W
11,94
22,1
B
5
3,2
6,4
W
-B
6
W
4,32
25,3
-B
7
not assembled
not assembled
22,1
3,42
-25,3
-22,1
+rect
+rect
8
3,42
9
15,83
15,83
8,13
G6
E6
-T
not assembled
not assembled
-9,3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
25,3
-25,3
3,42
+DC
+DC
GB
EB
8,13
-22,1
+T
3,42
-6,1
not assembled
25,3
-39,32
-39,32
-39,32
-39,32
-40,22
-40,22
15,7
8,13
-DC
18,9
not assembled
-12,18
22,1
-B
41,82
41,82
41,82
0,43
E3
V
25,3
-B
-8,98
-25,3
-22,1
+rect
+rect
-5,79
V
22,1
G4
E4
G3
not assembled
not assembled
-9,3
0,43
25,3
-1,07
-25,3
-40,22
-40,22
-10,18
-10,18
+DC
+DC
L1
not assembled
not assembled
-8,98
-6,09
-25,3
-1,82
-1,82
V
V
-22,1
L1
-5,79
not assembled
not assembled
-9,5
not assembled
not assembled
25,3
-10,18
-10,18
-10,18
-10,18
-10,18
-10,18
-53,82
-53,82
L2
L2
-7,27
-14,97
-14,97
-DC
G2
E2
-6,3
22,1
6,3
-rect
-rect
L3
25,3
9,5
not assembled
-11,82
22,1
23,95
23,95
23,95
-19,22
U
U
25,3
L3
-8,63
-25,3
L1
-5,42
E1
G1
-22,1
L1
-25,3
not assembled
not assembled
-9,5
not assembled
-11,82
-19,7
-19,7
U
U
-53,82
-53,82
L2
L2
-8,62
-6,3
not assembled
-1
not assembled
6,3
17,74
17,74
-22,67
-22,67
-25,9
+B
+B
-53,82
-53,82
-53,82
-53,82
-rect
-rect
L3
2,2
9,5
22,1
-DC
-DC
+B
22,1
25,3
25,3
L3
-1
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
28
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T2, T1, T4, T3, T6, T5
IGBT
1200 V
150 A
Inverter Switch
D1, D2, D3, D4, D5,
FWD
1200 V
150 A
Inverter Diode
D6
T7
D7
IGBT
FWD
1200 V
1200 V
150 A
100 A
Brake Switch
Brake Diode
D11, D8, D12, D9,
D13, D10
PTC1
Rectifier
1600 V
60 A
Rectifier Diode
Thermistor
Thermistor
Copyright Vincotech
29
14 Feb. 2020 / Revision 1
80-M312PMA150M01-K420A82
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M312PMA150M01-K420A82-D1-14
14 Feb. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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14 Feb. 2020 / Revision 1
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