80-M3166BA140SC02-K489G4 [VINCOTECH]
High inrush current capability;
| 型号： | 80-M3166BA140SC02-K489G4 |
| 厂家： | 
VINCOTECH |
| 描述： | High inrush current capability |
| 文件： | 总22页 (文件大小：7051K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M3166BA140SC02-K489G40
datasheet
MiniSKiiP CON 3
1200 V / 140 A
Topology features
MiniSKiiP® 3 16 mm housing
● Three-phase Rectifier
● Brake Chopper
● Temperature sensor
Component features
● High inrush current capability
Housing features
● Base isolation: Al2O3
● Easy assembly in one mounting step
● Flexible PCB design w/o pin holes
● Rugged solderless spring contacts
Schematic
Target applications
● Motor Drivers
● Servo Drivers
● UPS
Types
● 80-M3166BA140SC02-K489G40
Copyright Vincotech
1
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Switch
VCES
Collector-emitter voltage
1200
164
450
427
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
114
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
900
A
Single Half Sine Wave,
tp = 10 ms
4050
252
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Rectifier Thyristor
VRRM
ITRMSM
ITSM
Repetitive peak reverse voltage
1600
95
V
A
Maximum RMS on-state current
Surge on-state current
I2t value
Tj = Tjmax
Ts = 80 °C
Tj = 130 °C
Tj = 130 °C
Ts = 80 °C
Single Half Sine Wave,
tp = 10 ms
1250
7810
169
A
Single Half Sine Wave,
tp = 10 ms
I2t
A2s
W
°C
Ptot(AV)
Tjmax
Mean total power loss
Maximum Junction Temperature
Tj = Tjmax
130
Copyright Vincotech
2
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
132
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
1380
9520
182
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0052
150
25
5,3
5,8
6,3
V
25
1,58
1,93
2,4
2,07(1)
15
0
V
150
1200
0
25
25
2
µA
nA
Ω
20
240
5
Cies
Cres
Qg
8600
320
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
1140
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,22
K/W
25
64,2
65
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
66
70,8
71
tr
125
150
25
70
Rgon = 4 Ω
Rgoff = 4 Ω
597
td(off)
Turn-off delay time
Fall time
125
150
25
681
ns
708
0/15
700
150
27,94
44,94
90,2
26,61
35,58
38,38
11,67
16,84
18,78
tf
125
150
25
ns
QrFWD=9,61 µC
QrFWD=19,74 µC
QrFWD=24,48 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
2,51
2,54
2,46(1)
2,38(1)
180
VF
IR
Forward voltage
150
V
150
25
Reverse leakage current
Vr = 1200 V
µA
150
14000
28000
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,38
K/W
25
40,69
54,34
60,7
IRRM
Peak recovery current
125
150
25
A
461,27
625,29
712,96
9,61
trr
Reverse recovery time
125
150
25
ns
di/dt=800 A/µs
di/dt=1170 A/µs
di/dt=1197 A/µs
Qr
Recovered charge
0/15
700
150
125
150
25
19,74
24,48
3,57
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
7,41
mWs
A/µs
9,26
97,86
60,59
65,54
(dirf/dt)max
125
150
Copyright Vincotech
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30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Rectifier Thyristor
Static
25
1,09
1,02
1,5
VT
IRD
IH
On-state voltage
110
V
125
Direct reverse current
Holding current
Vr = 1600 V
25
25
25
25
25
200
220
550
1,98
100
µA
mA
mA
V
tp = μs IG = A diG/d
t = A/μs
IL
Latching current
VGT
Gate trigger voltage
Gate trigger current
IGT
mA
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,3
K/W
Rectifier Diode
Static
25
1,2
1,21(1)
1,1(1)
VF
IR
Forward voltage
77
V
125
1,11
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,38
K/W
Copyright Vincotech
6
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
Maximum Current
Power dissipation constant
A-value
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
7
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
125
10
-1
100
75
50
25
0
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,222
25 °C
Tj:
VCE
=
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,55E-02
4,93E-02
9,20E-02
5,29E-02
1,25E-02
4,81E+00
1,04E+00
1,47E-01
3,54E-02
2,68E-03
Copyright Vincotech
8
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100µs
100
10
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
9
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,377
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
2,99E-02
6,92E-02
1,77E-01
7,45E-02
2,66E-02
3,14E+00
5,61E-01
9,53E-02
2,61E-02
2,31E-03
Copyright Vincotech
10
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Rectifier Thyristor Characteristics
figure 8.
Thyristor
figure 9.
Thyristor
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
250
200
150
100
50
10
-1
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
0,75
1,00
1,25
1,50
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,297
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Thyristor thermal model values
R (K/W)
τ (s)
1,68E-02
5,61E-02
1,84E-01
2,80E-02
1,20E-02
1,21E+01
1,12E+00
2,71E-01
1,13E-01
7,99E-03
Copyright Vincotech
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30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,384
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
2,93E-02
7,73E-02
1,90E-01
6,48E-02
2,27E-02
5,76E+00
7,33E-01
1,18E-01
4,24E-02
4,61E-03
Copyright Vincotech
12
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
13
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
120
100
80
60
40
20
0
60
50
40
30
20
10
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
50
100
150
200
250
300
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
Ω
125 °C
150 °C
700
0/15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
12,5
10,0
7,5
Erec
Erec
Erec
Erec
Erec
5,0
5,0
Erec
2,5
2,5
0,0
0,0
0,0
0
50
100
150
200
250
300
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
14
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80-M3166BA140SC02-K489G40
datasheet
Brake Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
tr
-1
10
td(on)
tf
td(on)
tr
-1
10
tf
-2
10
-2
10
0
50
100
150
200
250
300
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
4
°C
V
150
700
0/15
150
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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80-M3166BA140SC02-K489G40
datasheet
Brake Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
Qr
Qr
Qr
Qr
Qr
Qr
0
0
0,0
0
50
100
150
200
250
300
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
90
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
50
100
150
200
250
300
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
150
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
3500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
50
100
150
200
250
300
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
150
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
17
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
18
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Brake Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M3166BA140SC02-K489G40-/0A/
80-M3166BA140SC02-K489G40-/0B/
80-M3166BA140SC02-K489G40-/1A/
80-M3166BA140SC02-K489G40-/1B/
80-M3166BA140SC02-K489G40-/4A/
80-M3166BA140SC02-K489G40-/4B/
80-M3166BA140SC02-K489G40-/5A/
80-M3166BA140SC02-K489G40-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G36
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
not assembled
not assembled
not assembled
8,74
15,83
-25,3
2
not assembled
not assembled
not assembled
not assembled
not assembled
15,7
3
-32,82
-32,82
-35,68
-35,68
S27
G27
Br
4
11,94
5
22,1
6
25,3
Br
7
15,83
15,83
15,83
15,83
8,13
DC-
DC-
DC-
DC-
not assembled
not assembled
8
18,9
9
22,1
-36,58
-36,58
-36,58
-36,58
-15,7
-12,5
-9,3
ACIn1
ACIn1
ACIn1
ACIn1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
25,3
-25,3
-22,1
22,1
Therm1
Therm2
DC-
8,13
-6,1
8,13
not assembled
not assembled
22,1
8,13
25,3
DC-
1,82
-15,38
-12,18
-8,98
-5,79
22,1
ACIn3
ACIn3
ACIn3
ACIn3
DC-
-39,32
-39,32
Br
Br
1,82
25,3
1,82
not assembled
not assembled
1,82
0,43
-40,22
-40,22
-40,22
-40,22
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-50,18
-53,82
-53,82
-53,82
-53,82
-53,82
-53,82
-15,7
-12,5
-9,3
ACIn1
ACIn1
ACIn1
ACIn1
0,43
25,3
DC-
-1,07
-1,82
-1,82
-1,82
-1,82
-25,3
-15,38
-12,18
-8,98
-5,79
G34
ACIn3
ACIn3
ACIn3
ACIn3
-6,09
-25,3
-22,1
-18,9
-15,7
-9,5
DC+Rect
DC+Rect
DC+Rect
DC+Rect
DC+Br
DC+Br
DC+Br
DC+Br
Br
not assembled
not assembled
not assembled
not assembled
not assembled
-6,3
6,3
9,5
-16,05 -15,02
-16,05 -11,82
ACIn2
ACIn2
ACIn2
ACIn2
G32
22,1
25,3
-25,3
-22,1
-18,9
-15,7
-9,5
Br
-16,05
-16,05
-19,22
-19,7
-19,7
-19,7
-19,7
-8,63
-5,42
-25,3
-15,02
-11,82
-8,62
-5,42
DC+Rect
DC+Rect
DC+Rect
DC+Rect
DC+Br
DC+Br
ACIn2
ACIn2
ACIn2
ACIn2
-6,3
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
-53,82
-53,82
-53,82
-53,82
6,3
9,5
DC+Br
DC+Br
Br
22,1
25,3
Br
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
20
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Pinout
68,69,70,71,78,79,80,81
DC+Rect
72,73,74,75,82,83,85,86
DC+Br
G32
G34
21
G36
35
1
D27
Th32
Th34
Th36
ACIn1
54,55,56,57,64,65,66,67
Br
ACIn2
31,32,33,34,36,37,38,39
50,51,60,61,76,77,87,88
T27
ACIn3
15,16,17,18,22,23,24,25
49 G27
D31
D33
D35
48 S27
PTC
DC-
Therm1
11
Therm2
7,8,9,10,13,14,19,20
12
Identification
Component
Voltage
Current
Function
Comment
ID
T27
D27
IGBT
FWD
1200 V
1200 V
1600 V
1600 V
150 A
150 A
95 A
Brake Switch
Brake Diode
Th32, Th34, Th36
D31, D33, D35
PTC
Thyristor
Rectifier
PTC
Rectifier Thyristor
Rectifier Diode
Thermistor
140 A
Copyright Vincotech
21
30 Apr. 2022 / Revision 3
80-M3166BA140SC02-K489G40
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Correct tau values of thermal characteristic
80-M3166BA140SC02-K489G40-D3-14
30 Apr. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
30 Apr. 2022 / Revision 3
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