80-M006PNB010SA01-K615D [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 80-M006PNB010SA01-K615D |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总17页 (文件大小:934K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
80ꢀM006PNB010SA*ꢀK615*
datasheet
MiniSKiiP® PIM 0
Features
600 V / 10 A
MiniSKiiP®0 housing
● Solderless interconnection
● Trench Fieldstop IGBT's for low saturation losses
● Optional 2ꢀ and 3ꢀleg rectifier
Target Applications
Schematic
● Industrial Drives
● Embedded Drives
Types
80ꢀM006PNB010SA01ꢀK615D, 2ꢀleg rectifier
80ꢀM006PNB010SAꢀK615C, 3ꢀleg rectifier
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
V
A
T s = 80 °C
T c = 80 °C
25
25
T j = T jmax
t p = 10 ms
T j = T jmax
I FSM
Surge (nonꢀrepetitive) forward current
I2tꢀvalue
220
240
A
T j = 25 °C
I 2
t
A2s
T s = 80 °C
T c = 80 °C
46
70
P tot
Power dissipation
W
T jmax
Maximum Junction Temperature
150
°C
Inverter Switch
V CE
I C
Collectorꢀemitter break down voltage
600
V
A
T s = 80 °C
T c = 80 °C
15
15
T j = T jmax
DC collector current
I CRM
t p limited by T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
30
30
A
V CE ≤ 1200V, T j ≤ T op max
T j = T jmax
A
T s = 80 °C
T c = 80 °C
48
72
P tot
V GE
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150 °C
V GE = 15 V
6
µs
V
360
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
600
V
A
T s = 80 °C
T c = 80 °C
15
15
T j=T jmax
DC forward current
t p limited by T jmax
T j=T jmax
T s = 25 °C
Repetitive peak forward current
Power dissipation
30
A
T s = 80 °C
T c = 80 °C
38
57
W
°C
T jmax
Maximum Junction Temperature
175
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
ꢀ40…+(T jmax ꢀ 25)
Operation temperature under switching condition
Isolation Properties
Insulation voltage
V is
tp=2s
DC Voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative Tracking Index
CTI
copyright Vincotech
2
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V]
I C [A]
or
V GE [V]
or
or
V CE [V] I F [A]
T j [°C]
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Rectifier Diode
25
125
25
125
25
125
25
1,43
1,44
0,92
0,79
20,29
26,11
1,64
0,05
V F
V to
r t
Forward voltage
25
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
25
25
mꢁ
mA
I r
1500
125
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
1,5
K/W
Inverter Switch
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
25
150
25
150
25
150
25
5
5,8
6,5
1,99
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE=V GE
0,00015
V
V
1,19
1,64
1,89
15
0
10
0,0006
300
600
0
mA
nA
ꢁ
20
150
none
25
150
25
150
25
150
25
150
25
150
25
90
91
22
Rise time
25
ns
133
156
120
144
0,26
0,38
0,26
0,34
t d(off)
t f
Turnꢀoff delay time
R goff = 32 ꢁ
R gon = 32 ꢁ
±15
300
10
Fall time
E on
Turnꢀon energy loss
mWs
pF
E off
C ies
C oss
C rss
Q G
Turnꢀoff energy loss
150
Input capacitance
551
40
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
17
±15
55
62
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
2
K/W
Inverter Diode
25
150
25
150
25
150
25
150
25
150
25
1,39
1,32
6,77
9,87
233
V F
I RRM
Diode forward voltage
10
10
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
352
0,66
1,46
105
109
0,13
0,30
Q rr
R gon = 32 ꢁ
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
300
µC
( di rf/dt )max
E rec
A/µs
mWs
150
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
Thermal resistance junction to sink
2,5
K/W
Thermistor
Rated resistance
Deviation of R
R100
R
25
1000
ꢁ
%
R 25 = 1000 ꢁ
R 100 = 1670 ꢁ
25
100
ꢀ3
ꢀ2
3
2
Δ R/R
R 100
25
1670
0,76
ꢁ
Temperature coefficient
Aꢀvalue
% /K
1/K
1/K²
7,635*10ꢀ3
1,731*10ꢀ5
B (25/50)
25
25
B (25/100)
Bꢀvalue
Vincotech PTC Reference
E
copyright Vincotech
3
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
25
25
20
15
10
5
20
15
10
5
0
0
0
0
V
CE (V)
V
CE (V)
1
2
3
4
5
1
2
3
4
5
t p
=
t p =
250
25
ꢂs
°C
250
150
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
10
35
30
25
20
8
6
4
2
15
Tj = Tjmax-25°C
Tj = Tjmax-25°C
10
5
Tj = 25°C
Tj = 25°C
0
0
0
VGE (V)
VF (V)
2
4
6
8
10
0,0
0,5
1,0
1,5
2,0
2,5
t p
=
t p =
250
10
ꢂs
V
250
ꢂs
V CE
=
copyright Vincotech
4
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
0
5
10
15
20
0
32
64
96
128
160
inductive load
inductive load
T j =
T j =
°C
V
°C
V
25/150
25/150
300
V CE
V GE
=
=
V CE
V GE
=
=
300
±15
32
V
±15
10
V
R gon
R goff
=
=
I C =
ꢁ
ꢁ
A
32
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,6
0,5
0,4
0,3
0,4
Tj = Tjmax -25°C
Erec
0,3
Erec
0,2
Erec
Tj = 25°C
Tj = Tjmax -25°C
0,2
Erec
0,1
0,0
0,1
Tj = 25°C
0,0
I
C (A)
R G ( Ω )
0
5
10
15
20
0
32
64
96
128
160
inductive load
inductive load
T j =
T j =
°C
V
°C
V
25/150
300
25/150
300
V CE
V GE
=
=
V CE
V GE
=
=
±15
32
V
±15
10
V
R gon
=
I C =
ꢁ
A
copyright Vincotech
5
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
1,00
0,10
0,01
0,00
tdoff
tdoff
tdon
tf
tf
0,10
tdon
tr
tr
0,01
0,00
I C (A)
R G ( Ω )
0
5
10
15
20
0
32
64
96
128
160
inductive load
inductive load
T j =
T j =
150
300
±15
32
°C
V
150
300
±15
10
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
ꢁ
ꢁ
A
=
32
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon
)
0,6
0,6
0,5
0,4
0,3
trr
trr
0,5
0,4
Tj = Tjmax -25°C
trr
trr
0,3
0,2
0,1
0,0
Tj = Tjmax -25°C
0,2
0,1
Tj = 25°C
Tj = 25°C
0,0
I
C (A)
R g on ( Ω )
160
0
5
10
15
20
0
32
64
96
128
T j =
T j =
V R =
I F =
°C
V
°C
V
25/150
25/150
300
V CE
V GE
R gon
=
300
±15
32
=
V
10
A
=
V GE =
ꢁ
±15
V
copyright Vincotech
6
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
2,5
2,0
1,5
2,0
Qrr
Tj = Tjmax -25°C
1,6
1,2
0,8
0,4
0,0
Qrr
Qrr
1,0
Tj = Tjmax -25°C
Qrr
Tj = 25°C
0,5
Tj = 25°C
0,0
I
C (A)
R g on ( Ω)
160
0
5
10
15
20
0
32
64
96
128
T j =
T j =
V R =
I F =
°C
V
°C
V
25/150
300
25/150
300
V CE
V GE
=
=
±15
32
V
10
A
R gon
=
V GE =
ꢁ
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
12
25
IRRM
10
20
Tj = Tjmax - 25°C
Tj = Tjmax -25°C
8
IRRM
15
10
5
6
Tj = 25°C
4
2
0
Tj = 25°C
IRRM
IRRM
0
I
C (A)
R gon ( Ω )
0
5
10
15
20
0
32
64
96
128
160
T j =
T j =
V R =
I F =
°C
V
°C
V
25/150
25/150
300
V CE
V GE
R gon
=
300
±15
32
=
V
10
A
=
V GE =
ꢁ
±15
V
copyright Vincotech
7
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
2500
600
µ
µ
µ
µ
dI0/dt
dI0/dt
Tj = 25°C
dIrec/dt
dIrec/dt
500
400
300
200
100
0
2000
dIo/dtLow T
di0/dtHigh T
1500
1000
500
Tj = Tjmax - 25°C
dIrec/dtLow T
dIrec/dtHigh T
dIrec/dtHigh T
0
0
32
64
96
128
160
R gon ( Ω )
I C (A)
0
5
10
15
20
T j =
T j =
V R =
I F =
°C
V
°C
V
25/150
25/150
300
V CE
V GE
R gon
=
300
±15
32
=
V
10
A
=
V GE =
ꢁ
±15
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
0,1
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
t p / T
t p / T
D =
R th(j-s)
D =
R th(j-s)
=
=
2
K/W
1,62
2,5
K/W
2,04
IGBT thermal model values
FWD thermal model values
Thermal grease
Phase change interface
Thermal grease
Phase change interface
R (K/W) τ (s)
R (K/W) Tau (s)
R (K/W) τ (s)
R (K/W) Tau (s)
0,04
0,15
0,71
0,61
0,26
0,22
5,9E+00
0,00
0,00
0,00
0,00
0,00
0,00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,05
0,25
0,88
0,73
0,33
0,26
9,0E+00
0,00
0,00
0,00
0,00
0,00
0,00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
0,0E+00
5,2Eꢀ01
7,5Eꢀ02
1,8Eꢀ02
2,8Eꢀ03
2,7Eꢀ04
6,6Eꢀ01
1,2Eꢀ01
2,9Eꢀ02
4,8Eꢀ03
6,9Eꢀ04
copyright Vincotech
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12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
100
80
60
40
20
0
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T j =
T j =
V GE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
75
60
45
30
15
0
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T j =
T j =
175
°C
175
°C
copyright Vincotech
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12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Inverter Switch / Inverter Diode
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collectorꢀemitter voltage
I C = f(V CE
)
V GE = f(Q G)
102
17,5
1mS
10uS
100uS
10mS
100mS
DC
15
12,5
10
101
120V
480V
100
7,5
5
10-1
2,5
0
10-2
100
0
10
20
30
40
50
60
70
80
103
Q G (nC)
101
102
VCE (V)
D =
single pulse
I C
=
10
A
T h
=
80
ºC
V
V GE
=
±15
T jmax
T j =
ºC
Figure 27
IGBT
Figure 28
IGBT
Short circuit withstand time as a function of
gateꢀemitter voltage
Typical short circuit collector current as a function of
gateꢀemitter voltage
t sc = f(V GE
)
I sc = f(V GE)
17,5
250
15
12,5
10
200
150
100
50
7,5
5
2,5
0
0
VGE (V)
12
14
16
18
VGE (V)
20
12
14
16
18
20
V CE
=
600
175
V
V CE
≤
600
175
V
T j ≤
T j =
ºC
ºC
copyright Vincotech
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12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Rectifier Diode
Figure 1
Rectifier Diode
Figure 2
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
100
10-1
10-2
75
60
45
30
15
0
Tj = 25°C
Tj = Tjmax-25°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
t p (s)
0,0
0,5
1,0
1,5
2,0
2,5
VF (V) 3,0
10-5
10-4
10-3
10-2
10-1
100
101
1
t p / T
t p
=
250
ꢂs
D =
R th(j-s)
=
1,5
K/W
Figure 3
Power dissipation as a
Rectifier Diode
Figure 4
Forward current as a
Rectifier Diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
105
90
75
60
45
30
15
0
30
25
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
30
60
90
120
150
0
30
60
90
120
150
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
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12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Thermistor
Figure 1
Thermistor
Thermistor
Typical PTC characteristic
as a function of temperature
R T = f(T )
Equation of PTC resistance temperature dependency
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
R (T ) = 1000 Ω[1+ A *(T ꢀ25°C) +B *(T ꢀ25°C) 2]
[Ω]
25
45
65
85
105
125
T (°C)
copyright Vincotech
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12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Switching Definitions Output Inverter
General conditions
T j
=
=
=
150 °C
32 ꢁ
32 ꢁ
R gon
R goff
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
250
%
140
%
IC
120
tdoff
200
VCE
100
VCE 90%
150
VGE 90%
80
60
40
20
0
VCE
IC
100
VGE
tEoff
tdon
50
IC10%
VCE 3%
VGE10%
IC 1%
0
VGE
tEon
-50
-20
2,8
2,9
3
3,1
3,2
3,3
3,4
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (µs)
time(µs)
V GE (0%) =
ꢀ15
V
V GE (0%) =
ꢀ15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
300
10
V
300
10
V
A
A
t doff
=
=
0,15
0,48
ꢂs
ꢂs
t don
=
=
0,09
0,24
ꢂs
ꢂs
t E off
t E on
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
140
250
%
%
Ic
120
fitted
IC
VCE
200
150
100
IC 90%
80
VCE
100
IC
60%
60
IC90%
tr
IC 40%
40
50
20
IC10%
IC10%
0
0
tf
-20
-50
-0,05
0
0,05
0,1
0,15
0,2
0,25
0,3
3
3,05
3,1
3,15
3,2
3,25
time (µs)
time(µs)
V C (100%) =
I C (100%) =
t f =
300
V
V C (100%) =
I C (100%) =
t r =
300
10
V
10
A
A
0,13
ꢂs
0,02
ꢂs
copyright Vincotech
13
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
120
180
%
%
Pon
Eoff
Poff
100
80
60
40
20
150
120
Eon
90
60
30
0
VGE 90%
IC 1%
VCE
3%
VGE 10%
0
tEoff
tEon
-20
-30
-0,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
time (µs)
2,9
3
3,1
3,2
3,3
3,4
time(µs)
P off (100%) =
E off (100%) =
3,01
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
3,01
0,36
0,24
kW
mJ
ꢂs
0,32
0,48
t E off
=
t E on =
Figure 7
Output inverter FWD
Turnꢀoff Switching Waveforms & definition of t rr
120
%
Id
80
trr
40
Vd
0
IRRM10%
fitted
-40
-80
IRRM90%
IRRM100%
3,25
-120
2,95
3,1
3,4
3,55
3,7
time(µs)
V d (100%) =
I d (100%) =
I RRM (100%) =
300
10
V
A
ꢀ10
0,34
A
t rr
=
ꢂs
copyright Vincotech
14
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turnꢀon Switching Waveforms & definition of t Qrr
Turnꢀon Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec
)
150
120
%
%
Qrr
Erec
Id
100
100
80
60
40
20
0
tQrr
tErec
50
0
-50
-100
-150
Prec
-20
2,9
3,1
3,3
3,5
3,7
3,9
4,1
4,3
3
3,2
3,4
3,6
3,8
4
4,2
time(µs)
time(µs)
I d (100%) =
Q rr (100%) =
10
A
P rec (100%) =
E rec (100%) =
3,01
kW
mJ
ꢂs
1,50
1,00
ꢂC
ꢂs
0,32
1,00
t Q rr
=
t E rec =
copyright Vincotech
15
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout ꢀ Identification
Ordering Code & Marking
Version
Ordering Code
with 2ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM)
with 2ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM) and P12
with 2ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM)
with 2ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM) and P12
with 3ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM)
with 3ꢀleg rectifier, std lid (black V23990ꢀK02ꢀTꢀPM) and P12
with 3ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM)
with 3ꢀleg rectifier, thin lid (white V23990ꢀK03ꢀTꢀPM) and P12
80ꢀM006PNB010SA01ꢀK615Dꢀ/0A/
80ꢀM006PNB010SA01ꢀK615Dꢀ/1A/
80ꢀM006PNB010SA01ꢀK615Dꢀ/0B/
80ꢀM006PNB010SA01ꢀK615Dꢀ/1B/
80ꢀM006PNB010SAꢀK615Cꢀ/0A/
80ꢀM006PNB010SAꢀK615Cꢀ/1A/
80ꢀM006PNB010SAꢀK615Cꢀ/0B/
80ꢀM006PNB010SAꢀK615Cꢀ/1B/
Name
Type&Ver
Date code
Vinco&Lot Serial&UL
Text
NNꢀNNNNNNNNNNNNNN
TTTTTTTVV
WWYY
Vinco LLLLL
SSSS UL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1ꢀT6
D1ꢀD6
D7ꢀD12
PTC
IGBT
FWD
600 V
600 V
1600 V
ꢀ
10 A
10 A
25 A
ꢀ
Inverter Switch
Inverter Diode
Rectifier Diode
Thermistor
Rectifier Diode
PTC
copyright Vincotech
16
12 Jan. 2016 / Revision 3
80ꢀM006PNB010SA*ꢀK615*
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
198
Handling instructions for MiniSkiiP ® 0 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 0 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80ꢀM006PNB010SAxꢀK615xꢀD3ꢀ14
12 Jan. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
12 Jan. 2016 / Revision 3
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