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80-M1126PA010M7-K217F7 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
80-M1126PA010M7-K217F7
型号： 80-M1126PA010M7-K217F7
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总17页 (文件大小：1376K)
中文：  中文翻译
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80-M1126PA010M7-K217F70  
datasheet  
MiniSKiiP® PACK 1  
1200 V / 10 A  
MiniSkiip® 1  
Features  
● IGBT M7 with low VCEsat and improved EMC behavior  
● Open emitter configuration  
● Solder-free spring contact technology  
● Built-in PTC  
Schematic  
Target applications  
● Industrial Drives  
● Embedded Drive  
Types  
● 80-M1126PA010M7-K217F70  
Maximum Ratings  
Tjꢀ= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
1200  
10  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
20  
A
ꢀ
Tj = Tjmax  
67  
W
V
±20  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
1
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Maximum Ratings  
Tjꢀ= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
1200  
14  
V
A
ꢀ
ꢀ
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
20  
A
Tj = Tjmax  
53  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
6,3  
V
Visol  
Isolation voltage  
AC Voltage  
With std lid  
tp = 1 min  
V
Creepage distance  
mm  
mm  
For more informations see handling instructions  
With std lid  
Clearance  
6,3  
For more informations see handling instructions  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tjꢀꢀ[°C]  
VFꢀ [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,001  
10  
25  
5,4  
6
6,6  
V
V
25  
1,66  
1,90  
1,96  
1,95  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
55  
µA  
nA  
Ω
20  
500  
none  
2000  
86  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
23  
15  
600  
10  
80  
nC  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j‐s)  
Thermal resistance junction to sink  
1,41  
K/W  
Dynamic  
25  
128  
126  
123  
td(on)  
125  
150  
25  
Turn-on delay time  
29  
tr  
Rise time  
125  
150  
25  
32  
34  
145  
Rgoff = 32 Ω  
Rgon = 32 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
179  
182  
98  
108  
±15  
600  
10  
tf  
117  
0,883  
1,125  
1,189  
0,656  
0,860  
0,908  
Qr  
Qr  
Qr  
= 1,1 μC  
= 1,7 μC  
= 1,8 μC  
FWD  
FWD  
FWD  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
3
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tjꢀꢀ[°C]  
VFꢀ [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
125  
150  
1,61  
1,69  
1,69  
2,1  
25  
VF  
IR  
Forward voltage  
10  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j‐s)  
Thermal resistance junction to sink  
1,80  
K/W  
Dynamic  
25  
9
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
9
9
Peak recovery current  
A
254  
373  
409  
1,088  
1,664  
1,808  
0,374  
0,620  
0,680  
85  
trr  
Reverse recovery time  
ns  
di/dt = 278 A/μs  
di/dt = 270 A/μs ±15  
di/dt = 272 A/μs  
Qr  
600  
10  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
ꢀ
125  
150  
54  
49  
Thermistor  
R
Rated resistance  
25  
1
kΩ  
%
ΔR/R  
ꢀ
Deviation of R100ꢀ  
R100ꢀ  
R100 = 1670 Ω  
100  
100  
25  
-2  
+2  
R
1670  
0,76  
Ω
Power dissipation constant  
A-value  
mW/K  
1/K  
1/K²  
7,635*10-3  
1,731*10-5  
A(25/50)  
ꢀ
25  
B
(25/100)ꢀ  
B-value  
25  
Vincotech PTC Reference  
E
Copyright Vincotech  
4
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
= f(  
)
VCE  
= f(  
)
VCE  
IC  
IC  
VGEꢀ  
:
I
I
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
=
=
250  
150  
7 V to 17 V in steps of 1 V  
μs  
tp  
tp  
Tj  
=
V
:
Tj  
°C  
VGE  
from  
VGE  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
= f(  
)
VGE  
= f( )  
Z th(j‐s) tp  
IC  
101  
I
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
=
100  
10  
μs  
25 °C  
125 °C  
150 °C  
=
D
tp  
tpꢀ/ꢀT  
=
V
:
Tj  
=
R th(j‐s)  
1,41  
K/W  
VCE  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
6,61E-02  
1,81E-01  
5,32E-01  
3,21E-01  
1,59E-01  
1,49E-01  
1,89E+00  
2,00E-01  
4,93E-02  
1,08E-02  
2,58E-03  
4,46E-04  
Copyright Vincotech  
5
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
= f(  
)
VCE  
IC  
I
=
single pulse  
80  
D
=
ºC  
V
Ts  
=
±15  
VGE  
=
Tjꢀ  
Tjmax  
Copyright Vincotech  
6
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
= f(  
)
= f( )  
tp  
IF  
VF  
Z th(j‐s)  
101  
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
=
250  
μs  
25 °C  
125 °C  
150 °C  
=
/
tp  
tp  
D
T
:
Tj  
1,80  
K/W  
R th(j‐s)  
FWD thermal model values  
(K/W)  
Rꢀ  
τ
(s)  
9,72E-02  
2,38E-01  
9,04E-01  
3,13E-01  
1,25E-01  
1,19E-01  
1,16E+00  
1,67E-01  
4,46E-02  
8,53E-03  
2,30E-03  
3,66E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical PTC characteristic  
as a function of temperature  
Thermistor  
=
R
f(T)  
Copyright Vincotech  
7
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
Eꢀ=ꢀf(R g  
)
Eꢀ=ꢀf(IC  
)
ꢀ
ꢀ
ꢀ
ꢀ
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
ꢀ
:
ꢀ
VCE  
=
=
=
600  
±15  
32  
V
V
Ω
Ω
T
j
VCE  
=
600  
±15  
10  
V
V
A
Tj:  
VGEꢀ  
VGEꢀ=  
R gonꢀ  
ICꢀ=  
R
goffꢀ=  
32  
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erecꢀ=ꢀf(Ic)  
Erecꢀ=ꢀf(R g)  
ꢀ
ꢀ
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
ꢀ
:
Tj  
VCE  
=
=
=
600  
±15  
32  
V
V
Ω
Tj:  
VCEꢀ=  
VGEꢀ=  
ICꢀ=  
600  
±15  
10  
V
V
A
VGEꢀ  
R gonꢀ  
Copyright Vincotech  
8
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
tꢀ=ꢀf(IC  
)
tꢀ=ꢀf(R g)  
ꢀ
ꢀ
With an inductive load at  
With an inductive load at  
Tjꢀ=ꢀ  
150  
600  
±15  
32  
°C  
V
Tjꢀ=ꢀ  
150  
600  
±15  
10  
°C  
V
ꢀ
ꢀ
VCE  
=
=
=
VCE  
=
=
VGEꢀ  
V
VGEꢀ  
V
R gonꢀ  
Ω
Ω
ICꢀ=  
A
R
goffꢀ=  
32  
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trrꢀ=ꢀf(IC  
)
trrꢀ=ꢀf(R gon)  
ꢀ
ꢀ
25 °C  
600  
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE  
=
600  
±15  
32  
V
V
Ω
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ  
=
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGEꢀ  
=
125 °C  
150 °C  
VGEꢀ  
=
±15  
10  
R gonꢀ  
=
ICꢀ  
=
Copyright Vincotech  
9
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q rꢀ=ꢀf(IC  
)
Q rꢀ=ꢀf(R gon)  
Q
Q
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ  
=
600  
±15  
32  
V
V
Ω
25 °C  
125 °C  
150 °C  
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE  
VGEꢀ=  
IC  
=
600  
±15  
10  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGEꢀ=  
R gonꢀ  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRMꢀ=ꢀf(IC  
)
IRMꢀ=ꢀf(R gon)  
I
I
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ  
=
600  
±15  
32  
V
V
Ω
25 °C  
125 °C  
150 °C  
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ  
VGEꢀ=  
ICꢀ  
=
600  
±15  
10  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
:
Tj  
VGEꢀ=  
R gonꢀ  
=
=
Copyright Vincotech  
10  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,ꢀdi rr/dtꢀ=ꢀf(IC  
)
di F/dt,ꢀdi rr/dtꢀ=ꢀf(R gon)  
d
iF/  
d
t
d
iF/dt  
ꢀ
i
t
dir r/dt  
dirr  
/
d
t
i
25 °C  
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ  
=
600  
V
V
Ω
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ  
VGEꢀ=  
IC  
=
600  
±15  
10  
V
V
A
25 °C  
:
Tj  
:
Tj  
VGEꢀ  
=
±15  
32  
125 °C  
150 °C  
125 °C  
150 °C  
R gonꢀ  
=
=
figure 15.  
IGBT  
Reverse bias safe operating area  
ICꢀ=ꢀf(VCE  
)
I
ICꢀMAX  
I
I
V
At  
Tjꢀ=  
175  
°C  
Ω
R
gonꢀ=  
32  
32  
R goffꢀ=  
Ω
Copyright Vincotech  
11  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Definitions  
General conditions  
=
=
=
T jꢀ  
Rgonꢀ  
125 °C  
32 Ω  
Rgoffꢀ  
32 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VCE  
VGE  
tEoff  
VCE  
tEon  
-15  
VGEꢀ(0%)ꢀ=  
GEꢀ(100%)ꢀ=  
VCꢀ(100%)ꢀ=  
-15  
15  
V
VGEꢀ(0%)ꢀ=  
VGEꢀ(100%)ꢀ=  
VCꢀ(100%)ꢀ=  
ICꢀ(100%)ꢀ=  
tdonꢀ=  
V
V
V
15  
V
600  
10  
V
600  
10  
V
I
t
Cꢀ(100%)ꢀ=  
doffꢀ=  
A
A
0,179  
0,737  
μs  
μs  
0,126  
0,493  
μs  
μs  
tEoffꢀ  
=
tEonꢀ  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
tf  
VCE  
600  
10  
V
600  
10  
V
VCꢀ(100%)ꢀ=  
ICꢀ(100%)ꢀ=  
VCꢀ(100%)ꢀ=  
ICꢀ(100%)ꢀ=  
A
A
0,108  
μs  
0,032  
μs  
tfꢀ=  
trꢀ=  
Copyright Vincotech  
12  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Eoff  
Pon  
Poff  
Eon  
tEoff  
tEon  
Poffꢀ(100%)ꢀ=  
offꢀ(100%)ꢀ=  
tEoffꢀ  
6,02  
0,86  
0,74  
kW  
mJ  
μs  
Ponꢀ(100%)ꢀ=  
Eonꢀ(100%)ꢀ=  
6,02  
1,13  
0,49  
kW  
mJ  
μs  
E
=
tEonꢀ=  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
fitted  
VF  
VFꢀ(100%)ꢀ=  
Fꢀ(100%)ꢀ=  
IRRMꢀ(100%)ꢀ=  
rrꢀ=  
600  
V
I
10  
A
-9  
A
t
0,373  
μs  
Copyright Vincotech  
13  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Inverter Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
IF  
Qr  
Erec  
tErec  
Prec  
IFꢀ(100%)ꢀ=  
10  
A
Precꢀ(100%)ꢀ=  
Erecꢀ(100%)ꢀ=  
tErecꢀ=  
6,02  
0,62  
1,00  
kW  
Q
rꢀ(100%)ꢀ=  
1,66  
1,00  
μC  
μs  
mJ  
tQrꢀ=  
μs  
Copyright Vincotech  
14  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Ordering Code & Marking  
Version  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
Ordering Code  
80-M1126PA010M7-K217F70-/0A/  
80-M1126PA010M7-K217F70-/0B/  
80-M1126PA010M7-K217F70-/1A/  
80-M1126PA010M7-K217F70-/1B/  
80-M1126PA010M7-K217F70-/4A/  
80-M1126PA010M7-K217F70-/4B/  
80-M1126PA010M7-K217F70-/5A/  
80-M1126PA010M7-K217F70-/5B/  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
PCB pad table  
Pin  
1
X
Y
Function  
G16  
15,93 -14,6  
2
15,93  
15,93  
-9,8  
-5  
Ph3  
Ph3  
3
4
Not assembled  
7,62 G15  
5
15,93  
6
15,93 12,62  
Therm1  
Therm2  
7
15,93  
15,8  
8
Not assembled  
9
8,23  
8,23  
7,73  
12,62  
15,8  
DC-3  
10  
DC-3  
G14  
11  
12  
13  
14  
-14,6  
Not assembled  
0,53  
0,53  
0,53  
9,45  
12,62  
15,8  
G13  
15  
16  
17  
18  
19  
20  
21  
22  
DC-2  
DC-2  
Ph2  
-0,47 -14,6  
-0,47 -9,8  
Ph2  
Not assembled  
-7,17 12,62  
-7,17 15,8  
-8,07 -14,6  
-8,07 -9,8  
DC-1  
DC-1  
23  
24  
DC+  
DC+  
G12  
Ph1  
Ph1  
25 -15,02 -15,8  
26 -15,02 -9,8  
27 -15,02  
28  
0
Not assembled  
29 -15,02 15,8  
G11  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
15  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14,  
T15, T16  
IGBT  
1200 V  
10 A  
10 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
FWD  
PTC  
1200 V  
Inverter Diode  
Thermistor  
Rt  
Copyright Vincotech  
16  
09 Nov. 2017 / Revision 1  
80-M1126PA010M7-K217F70  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 120  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 1 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
80-M1126PA010M7-K217F70-D1-14  
09 Nov. 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
09 Nov. 2017 / Revision 1  

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