70-W212NMA600M7-LC09F71 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;型号: | 70-W212NMA600M7-LC09F71 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
文件: | 总32页 (文件大小:9356K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
70-W212NMA600M7-LC09F71
datasheet
VINcoMNPC X4
1200 V / 600 A
Topology features
VINco X4 12 mm housing
● Common Emitter configuration
● Desaturation Pins
● Mixed Voltage Neutral Point Clamped Topology (T-Type)
● On-board Capacitors
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
● Switching optimized for EMC
Housing features
● Base isolation: Al2O3
● Optimized for three-level topologies
● Enables high switching frequencies
● Low inductive package
Schematic
● Easy paralleling
● Optimal current sharing
● Thermo-mechanical push-and-pull force relief
● M6 High Power Screw Contact
● M4 Low Inductive Interface
● Press-fit connection to driver PCB
Target applications
● Solar Inverters
● UPS
Types
● 70-W212NMA600M7-LC09F71
Copyright Vincotech
1
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
475
1200
819
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
650
352
1200
475
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
1200
35
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
77
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
≤ 50%
> 50%
650
500
Relative moisture level
VCES
Collector-emitter voltage
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
468
1200
625
±20
9
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
338
511
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
48
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
80
A
Ptot
84
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-40 ... 105
°C
Copyright Vincotech
3
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Storage temperature
-40…+125
-40…+(Tjmax - 25)
125
°C
°C
°C
Operation temperature under switching
condition
Tjop
Maximum allowed PCB temperature
TPCB
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,06
600
25
5,4
6
6,6
V
V
25
1,58
1,8
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,86
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
400
µA
nA
Ω
20
2000
0,75
120000
3520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
Reverse transfer capacitance
Gate charge
0
10
25
25
1280
VCC = 600 V
0/15
600
4000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,12
K/W
25
458
472
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
76
tr
125
25
89
Rgon = 1 Ω
Rgoff = 1 Ω
360
td(off)
Turn-off delay time
Fall time
ns
125
25
386
±15
350
600
62,1
84,31
28,01
38,42
24,43
31,55
tf
ns
125
25
QrFWD=45,44 µC
QrFWD=83,52 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
5
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,62
1,63
1,64
1,85(1)
200
VF
IR
Forward voltage
600
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,2
K/W
25
321,31
348,23
353,62
631,4
45,44
83,52
10,47
20,26
3597
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=10600 A/µs
di/dt=4275 A/µs
Qr
±15
350
600
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
2787
Copyright Vincotech
6
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
1,61
1,69
1,7
1,9(1)
VF
IR
Forward voltage
20
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
50
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,23
K/W
Copyright Vincotech
7
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,06
600
25
5,4
6
6,6
V
V
25
1,37
1,43
1,45
1,6(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
800
µA
nA
Ω
20
1
Cies
Coes
Cres
Qg
76000
3280
1400
2480
pF
pF
pF
nC
Output capacitance
Reverse transfer capacitance
Gate charge
0
10
25
25
VCC = 300 V
15
600
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,15
K/W
25
324
333
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
65
tr
125
25
82
Rgon = 1 Ω
Rgoff = 1 Ω
284
td(off)
Turn-off delay time
Fall time
ns
125
25
309
±15
350
600
69,98
82,78
18,5
27,76
22,3
29,76
tf
ns
125
25
QrFWD=56,27 µC
QrFWD=73,47 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
8
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,8
1,9
1,9
2,1(1)
160
VF
IR
Forward voltage
600
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,19
K/W
25
408,32
397,79
334,88
476,52
56,27
73,47
13,77
17,42
4382
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=11600 A/µs
di/dt=5938 A/µs
Qr
±15
350
600
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
2758
Copyright Vincotech
9
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,23
1,74
1,65
1,61
1,87(1)
0,48
VF
IR
Forward voltage
40
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,14
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
1360
nF
%
%
%
Tolerance
-10
10
Dissipation factor
Climatic category
0,04
40/105/56
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1750
1750
VGE
:
7 V
8 V
9 V
1500
1250
1000
750
500
250
0
1500
1250
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
Tj =
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
600
10
500
400
300
200
100
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,116
25 °C
125 °C
150 °C
VCE
=
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,98E-02
3,00E-02
3,39E-02
2,73E-02
4,89E-03
4,58E+00
1,08E+00
1,49E-01
2,18E-02
5,44E-04
Copyright Vincotech
11
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
10000
1000
100
10
17,5
15,0
12,5
10,0
7,5
10µs
100µs
1ms
10ms
100ms
DC
1
5,0
0,1
2,5
0,01
0,0
1
10
100
1000
10000
0
500 1000 1500 2000 2500 3000 3500 4000 4500
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
150
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
1750
1500
1250
1000
750
500
250
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,2
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,88E-02
4,51E-02
7,10E-02
4,92E-02
1,59E-02
3,84E+00
6,36E-01
9,33E-02
1,96E-02
1,53E-03
Copyright Vincotech
13
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Sw. Protection Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,234
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,37E-02
2,23E-01
5,35E-01
2,37E-01
1,75E-01
2,41E+00
9,36E-02
2,00E-02
2,21E-03
2,82E-04
Copyright Vincotech
14
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Switch Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1750
1750
VGE
:
7 V
8 V
9 V
1500
1250
1000
750
500
250
0
1500
1250
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
125 °C
150 °C
VGE
Tj =
V
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 13.
IGBT
figure 14.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
600
10
500
400
300
200
100
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,152
25 °C
125 °C
150 °C
VCE
=
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,58E-03
4,22E-02
5,54E-02
3,88E-02
6,10E-03
8,37E+00
1,07E+00
1,25E-01
2,00E-02
6,89E-04
Copyright Vincotech
15
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Switch Characteristics
figure 15.
IGBT
figure 16.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
10000
1000
100
10
22,5
20,0
17,5
15,0
12,5
10,0
7,5
100µs
1ms
10ms
100ms
DC
1
5,0
0,1
2,5
0,01
0,0
1
10
100
1000
10000
0
500
25
1000
1500
2000
2500
3000
3500
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
16
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
1750
1500
1250
1000
750
500
250
0
10
-1
10
-2
10
-3
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,186
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,79E-02
4,32E-02
5,97E-02
4,70E-02
8,15E-03
3,85E+00
6,60E-01
1,04E-01
2,25E-02
1,69E-03
Copyright Vincotech
17
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Sw. Protection Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
10
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,135
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,28E-02
2,30E-01
5,00E-01
1,99E-01
1,53E-01
2,41E+00
9,67E-02
1,70E-02
2,18E-03
2,04E-04
Copyright Vincotech
18
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Thermistor Characteristics
figure 21.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
120
100
80
60
40
20
0
150
125
100
75
Eon
Eon
Eon
Eon
Eoff
Eoff
50
Eoff
Eoff
25
0
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
Ω
350
±15
600
V
V
A
VGE
Rgon
Rgoff
1
figure 24.
FWD
figure 25.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
30
25
20
15
10
5
30
25
20
15
10
5
Erec
Erec
Erec
Erec
0
0
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
Copyright Vincotech
20
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Switching Characteristics
figure 26.
IGBT
figure 27.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
td(off)
0
10
tr
tf
tr
-1
10
-1
10
tf
-2
10
-2
10
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
1
°C
V
125
350
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
1
figure 28.
FWD
figure 29.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
1,2
1,0
0,8
0,6
0,4
0,2
0,0
1,50
1,25
1,00
0,75
0,50
0,25
0,00
trr
trr
trr
trr
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
Copyright Vincotech
21
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
150
125
100
75
120
100
80
60
40
20
0
Qr
Qr
Qr
50
Qr
25
0
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
figure 32.
FWD
figure 33.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
400
350
300
250
200
150
100
50
500
400
300
200
100
0
IRM
IRM
IRM
IRM
0
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
Copyright Vincotech
22
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Buck Switching Characteristics
figure 34.
FWD
figure 35.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
200
400
600
800
1000
1200
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
figure 36.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
1
1
Ω
Copyright Vincotech
23
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
60
50
40
30
20
10
0
125
100
75
50
25
0
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
Ω
350
±15
600
V
V
A
VGE
Rgon
Rgoff
1
figure 39.
FWD
figure 40.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
20,0
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
Erec
Erec
Erec
Erec
5,0
2,5
0,0
0
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
Copyright Vincotech
24
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Switching Characteristics
figure 41.
IGBT
figure 42.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
td(off)
0
10
tr
tf
-1
10
tr
-1
10
tf
-2
10
-2
10
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
1
°C
V
125
350
±15
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
1
figure 43.
FWD
figure 44.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
Copyright Vincotech
25
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
Qr
Qr
Qr
Qr
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
figure 47.
FWD
figure 48.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
500
400
300
200
100
0
600
500
400
300
200
100
0
IRM
IRM
IRM
IRM
0
250
500
750
1000
1250
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
Copyright Vincotech
26
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Boost Switching Characteristics
figure 49.
FWD
figure 50.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
250
500
750
1000
1250
IC(A)
0
1
2
3
4
5
6
7
8
9
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
1
V
V
Ω
350
±15
600
V
V
A
figure 51.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
125
1
°C
Ω
Rgon
Rgoff
=
=
1
Ω
Copyright Vincotech
27
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Switching Definitions
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Switching Definitions
figure 56.
FWD
figure 57.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste (3,4 W/mK, PSX-P7)
70-W212NMA600M7-LC09F71
70-W212NMA600M7-LC09F71-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Driver pins
Pin
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
X1
4,5
Y1
Function
G11-1
78,65
81,55
78,65
81,55
30,15
30,15
68,4
68,4
68,4
68,4
44,65
44,65
46
4,5
S11-1
39,5
39,5
19,45
24,55
1,95
4,85
39,15
G11-2
S11-2
DC+desat
DC+desat
S14-1
G14-1
G14-2
1.10 42,05
1.11 19,45
1.12 24,55
1.13
1.14
1.15
1.16
1.17
1.18
1.19 50,75
1.20 50,75
1.21 67,65
1.22 67,65
S14-2
GND_desat
GND_desat
G13-1
-2,2
-2,2
46,2
46,2
-6,75
-6,75
48,9
46
S13-1
G13-2
48,9
29,2
32,1
29,2
32,1
86,7
89,8
S13-2
S12-1
G12-1
S12-2
G12-2
Therm2
Therm1
Power interconnections
M6 screw
2.1
X2
0
Y2
0
Function
Phase
Phase
Phase
DC+
2.2
22
44
0
0
2.3
2.4
0
110,4
110,4
110,4
2.5
2.6
22
44
GND
DC-
Low current connections
M4 screw
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
X3
Y3
Function
DC+
DC+
EH
-37,4
81,4
-37,4
81,4
-37,4
81,4
-37,4
81,4
89,8
89,8
65,2
65,2
45,2
45,2
20,6
20,6
EH
Phase
Phase
DC-
DC-
Copyright Vincotech
30
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Pinout
DC+
n = 1-2
DC+desat
T11-n
D13
D41
C10
G11-n
S11-n
G14-n
S14-n
T14-n
D11
D43
Phase
i
D44
D12
Ph
i
GND
EH
T13-n
G13-n
GND_desat
S13-n
DC+
GND
GND
GND
GND
D14
D42
T12-n
C20
EH
G12-n
S12-n
Phase
DC-
Rt
Low current connections
DC-
Therm1
Therm2
NOTE: Driver pins for parallel devices are not connected inside the module!
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
D41, D42
T13, T14
D13, D14
D43, D44
C10, C20
Rt
IGBT
FWD
FWD
IGBT
FWD
FWD
Capacitor
NTC
1200 V
650 V
1200 V
650 V
1200 V
650 V
630 V
600 A
600 A
20 A
600 A
600 A
40 A
Buck Switch
Buck Diode
Buck Sw. Protection Diode
Boost Switch
Boost Diode
Boost Sw. Protection Diode
Capacitor (DC)
Thermistor
Copyright Vincotech
31
15 Jul. 2022 / Revision 3
70-W212NMA600M7-LC09F71
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 8
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco X4 packages see vincotech.com website.
Package data
Package data for VINco X4 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Correct tau values of thermal characteristic
70-W212NMA600M7-LC09F71-D3-14
15 Jul. 2022
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The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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15 Jul. 2022 / Revision 3
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