70-W612M3A1K8SC02-L300FP7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 70-W612M3A1K8SC02-L300FP7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总26页 (文件大小：2984K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
flow MNPC 12w
1200 V / 1800 A
Features
3x flow SCREW 4w 12mm housing
● Mixed voltage NPC
● Low inductive
● High power screw interface
● Integrated DCꢀsnubber capacitors
● High accuracy NTC
Target Applications
● Solar inverter
● UPS
Schematic
● High Speed Motor Drive
Types
● 70ꢀW612M3A1K8SC02ꢀL300FP70
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Half Bridge IGBT( T1 ,T4 )
V CE
I C
Collectorꢀemitter break down voltage
1200
V
A
T s = 80°C
T c = 80°C
1383
1618
T j = T jmax
DC collector current
I CRM
t p limited by T jmax
Pulsed collector current
Turn off safe operating area
Power dissipation
5400
3600
A
V CE ≤ 1200V, T j ≤ T op max
T j = T jmax
A
T s = 80°C
T c = 80°C
3123
4004
P tot
V GE
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150°C
V GE = 15V
10
µs
V
800
T jmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Neutral Point Diode( D5 ,D6 )
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
650
V
A
T s = 80°C
T c = 80°C
1005
1220
T j = T jmax
DC forward current
t p = 10ms, sin 180°
T j = T jmax
Repetitive peak forward current
Power dissipation
3600
A
T s = 80°C
T c = 80°C
1321
1693
W
°C
T jmax
Maximum Junction Temperature
175
Neutral Point IGBT( T2 ,T3 )
V CE
I C
Collectorꢀemitter break down voltage
650
V
A
T s = 80°C
T c = 80°C
1063
1447
T j = T jmax
DC collector current
I CRM
t p limited by T jmax
V CE ≤ 1200V, T j ≤ T op max
T j = T jmax
Pulsed collector current
Turn off safe operating area
Power dissipation
5400
3600
A
A
T s = 80°C
T c = 80°C
1985
2544
P tot
V GE
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
V CC
T j ≤ 150°C
V GE = 15V
6
µs
V
360
T jmax
Maximum Junction Temperature
175
°C
Half Bridge Diode( D2 ,D3 )
V RRM
I F
I FRM
P tot
Peak Repetitive Reverse Voltage
1200
V
A
T s = 80°C
T c = 80°C
1021
1218
T j = T jmax
DC forward current
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
5400
A
T s = 80°C
T c = 80°C
2075
2660
W
°C
T jmax
Maximum Junction Temperature
175
copyright Vincotech
2
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
DC link Capacitor
V MAX
TOP
Max.DC voltage
630
ꢀ40...+105
39
V
°C
A
Operation Temperature
RMS Current
f = 10KHz
ΔT = 10°C
IRMS
Ta
≤ 85°C
Thermal Properties
Storage temperature
T stg
T op
ꢀ40…+125
°C
°C
ꢀ40…+(T jmax ꢀ 25)
Operation temperature under switching condition
Insulation Properties
Insulation voltage
V is
t = 2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Stage
CTI
copyright Vincotech
3
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Characteristic Values
Conditions
V r [V]
or
Value
Typ
Parameter
Symbol
Unit
I C [A]
or
V GE [V]
or
V CE [V] I F [A]
T j [°C]
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Half Bridge IGBT( T1 ,T4 )
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0684
25
5,3
5,8
6,3
2,5
V
V
25
125
2,16
2,42
15
0
1800
1200
0
25
25
0,6
mA
nA
ꢁ
20
9000
All gates paralleling
0,42
25
125
25
125
25
125
25
125
25
125
25
288
284
103
105
447
373
63
96
40,95
48,01
73,51
107,89
Rise time
ns
t d(off)
t f
Turnꢀoff delay time
R goff = 0,5 ꢁ
R gon = 0,5 ꢁ
+15/ꢀ10
350
1800
Fall time
E on
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
E off
C ies
C oss
C rss
Q G
125
112200
6960
Output capacitance
f = 1MHz
0
25
25
25
pF
nC
Reverse transfer capacitance
Gate charge
4200
±15
600
1800
14400
phaseꢀchange
material
λ = 3,4 W/mK
R th(j-s)
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,03
0,02
K/W
R th(j-c)
Rth(jꢀc)= 0,75*Rth(jꢀs)
Neutral Point Diode( D5 ,D6 )
Diode forward voltage
25
125
1,64
1,61
2,4
V F
I R
1800
1800
V
µA
Reverse leakage current
650
350
25
21,6
25
125
25
125
25
125
25
125
25
125
588
883
223
I RRM
Peak reverse recovery current
Reverse recovery time
A
t rr
ns
302
60,94
124,39
10380
9556
12,36
24,83
Q rr
R gon = 0,5 ꢁ
Reverse recovered charge
+15/ꢀ10
µC
( di rf/dt )max
E rec
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
phaseꢀchange
material λ = 3,4
W/mK
R th(j-s)
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,07
0,06
K/W
R th(j-c)
Rth(jꢀc)= 0,75*Rth(jꢀs)
copyright Vincotech
4
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Characteristic Values
Conditions
V r [V]
or
Value
Typ
Parameter
Symbol
Unit
I C [A]
or
V GE [V]
or
V CE [V] I F [A]
T j [°C]
Min
Max
V GS [V]
or or
V DS [V] I D [A]
Neutral Point IGBT( T2 ,T3 )
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff incl diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0288
25
5,1
5,80
6,4
2,0
V
V
25
125
1,57
1,80
15
0
1800
1200
0
25
25
0,14
mA
nA
ꢁ
20
9000
All gates paralleling
0,16
25
125
25
125
25
125
25
125
25
125
25
197
201
89
Rise time
94
ns
246
268
44
t d(off)
t f
Turnꢀoff delay time
R goff = 0,5 ꢁ
R gon = 0,5 ꢁ
+15/ꢀ8
350
1800
Fall time
65
26,5
33,5
50,1
71,7
E on
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
E off
C ies
C oss
C rss
Q G
125
110880
6912
Output capacitance
f = 1MHz
0
25
1800
1800
25
25
pF
nC
Reverse transfer capacitance
Gate charge
3288
15
960
19200
phaseꢀchange
material λ = 3,4
W/mK
R th(j-s)
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,05
0,04
K/W
R th(j-c)
Rth(jꢀc)= 0,75*Rth(jꢀs)
Half Bridge Diode( D2 ,D3 )
Diode forward voltage
25
125
2,51
2,54
2,9
V F
1800
1800
V
ꢂA
I r
I RRM
Reverse leakage current
1200
350
25
2160
25
125
25
125
25
125
25
125
125
125
910
1244
111
117
62
Peak reverse recovery current
Reverse recovery time
A
t rr
ns
Q rr
R gon = 0,5 ꢁ
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
+15/ꢀ8
µC
165
20865
20295
11,52
35,92
( di rf/dt )max
E rec
A/µs
mWs
phaseꢀchange
material λ = 3,4
W/mK
R th(j-s)
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,05
0,04
K/W
R th(j-c)
Rth(jꢀc)= 0,75*Rth(jꢀs)
DC link Capacitor
C value
C
25
25
3450
ꢀ10
4080
1,58
4800
µF
mΩ
%
Equivalent series resistance
Tolerance
ESR
f = 10KHz
f = 1KHz
+10
Dissipation factor
Climatic category
20
0,0004
40/105/56
copyright Vincotech
5
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Characteristic Values
Conditions
V r [V]
or
Value
Typ
Parameter
Symbol
Unit
I C [A]
or
V GE [V]
or
V CE [V] I F [A]
or or
V DS [V] I D [A]
T j [°C]
Min
Max
V GS [V]
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
Bꢀvalue
R
Δ R/R
P
25
100
25
25
25
25
22000
ꢁ
%
R 100 = 1484 ꢁ
ꢀ5
+5
5
mW
mW/K
K
1,5
B (25/50)
Tol. ±1%
Tol. ±1%
3962
4000
B (25/100)
Bꢀvalue
K
Vincotech NTC Reference
I
Module Properties
LsCE
MS
Mt
M
Module inductance (from chips to PCB)
Mounting torque for screws to heatsink
Mounting torque for terminal screws
Mounting torque for Interconn PCB screws
Weight
2
nH
Nm
Nm
Nm
g
Screw M5 –according to the valid handling instructions
FSWBꢀMꢀ*ꢀHI
Screw M6 –according to the valid handling instructions
FSWBꢀMꢀ*ꢀHI
Screw M4 –according to the valid handling instructions
FSWBꢀMꢀ*ꢀHI
4
2,5
2
6
5
2,2
1930
m
copyright Vincotech
6
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Half Bridge T1, T4 / D5, D6
Half Bridge IGBT and Neutral Point FWD
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
3200
3200
2800
2400
2000
1600
1200
800
2800
2400
2000
1600
1200
800
400
400
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
350
25
ꢂs
°C
350
125
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
1500
3200
2800
2400
2000
1600
1200
1200
900
600
300
Tj = 125°C
800
Tj = 125°C
Tj = 25°C
Tj = 25°C
400
0
0
0
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
3
VGE (V)
VF (V)
At
At
t p
=
t p
=
350
10
ꢂs
V
350
ꢂs
V CE
=
copyright Vincotech
7
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Half Bridge T1, T4 / D5, D6
Half Bridge IGBT and Neutral Point FWD
Figure 5
IGBT
Figure 6
FWD
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
150
120
90
60
30
0
30
25
20
15
10
5
Eoff High T
Erec High T
Eoff Low T
Erec Low T
Eon High T
Eon Low T
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I
C (A)
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
350
25/125
25/125
V CE
=
V CE
V GE
R gon
=
350
V GE
R gon
R goff
=
=
ꢀ8 / +15
0,5
V
ꢀ8 / +15
0,5
V
=
=
ꢁ
ꢁ
ꢁ
=
0,5
Figure 7
IGBT
Figure 8
FWD
Typical switching times as a
function of collector current
t = f(I C)
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
1,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
tdoff
trr High T
tdon
trr Low T
tf
0,10
tr
0,01
0,00
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
At
T j =
T j =
125
°C
V
°C
V
25/125
V CE
=
V CE
V GE
R gon
=
350
350
V GE
R gon
R goff
=
=
ꢀ8 / +15
0,5
V
ꢀ8 / +15
0,5
V
=
=
ꢁ
ꢁ
ꢁ
=
0,5
copyright Vincotech
8
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Half Bridge T1, T4 / D5, D6
Half Bridge IGBT and Neutral Point FWD
Figure 9
FWD
Figure 10
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
150
120
90
60
30
0
1000
800
600
400
200
0
IRRM High T
Qrr High T
IRRM Low T
Qrr Low T
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
At
At
T j =
25/125
T j =
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V CE
V GE
R gon
=
350
=
=
ꢀ8 / +15
0,50
V
ꢀ8 / +15
0,50
V
=
=
ꢁ
ꢁ
Figure 11
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
20000
dIrec/dt T
dIo/dt T
15000
10000
5000
0
0
500
1000
1500
2000
2500
I C (A)
At
T j =
25/125
°C
V
V CE
V GE
R gon
=
350
=
ꢀ8 / +15
0,5
V
=
ꢁ
copyright Vincotech
9
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Half Bridge T1, T4 / D5, D6
Half Bridge IGBT and Neutral Point FWD
Figure 12
IGBT
Figure 13
FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
100
100
10-1
10-1
10-2
10-3
10-2
10-3
10-4
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
At
D =
At
D =
t
p / T
t p / T
IGBT thermal model values with phaseꢀchange material
FWD thermal model values with phaseꢀchange material
R th(j-s)
=
R thJC
=
R th(j-s)
=
R thJC
=
0,030
K/W
0,024
K/W
0,072
K/W
0,056
K/W
IGBT thermal model values
FWD thermal model values
With phase change material
R (K/W) Tau (s)
With phase change material
R (K/W) Tau (s)
0,0127
0,007
0,008
0,001
0,002
1,195
0,185
0,036
0,008
0,001
0,013
0,015
0,011
0,020
0,007
0,002
0,003
5,38
1,123
0,259
0,050
0,017
0,003
0,0004
Figure 14
IGBT
Figure 15
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Collector current as a
function of heatsink temperature
I C = f(T h)
6000
5000
4000
3000
2000
1000
0
2000
1800
1600
1400
1200
1000
800
600
400
200
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
copyright Vincotech
10
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Half Bridge T1, T4 / D5, D6
Half Bridge IGBT and Neutral Point FWD
Figure 16
FWD
Figure 17
FWD
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Forward current as a
function of heatsink temperature
I F = f(T h)
2500
2000
1500
1000
500
1800
1600
1400
1200
1000
800
600
400
200
0
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
T j =
T j =
175
°C
175
°C
Figure 18
IGBT
Figure 19
Reverse bias safe operating area
IGBT
Safe operating area as a function
of collectorꢀemitter voltage
I C = f(V CE
)
I C = f(V CE)
4000
IC MAX
10uS
3600
3200
2800
2400
2000
1600
1200
800
103
100uS
102
1mS
101
10mS
100mS
DC
100
10-1
400
0
0
200
400
600
800
1000
1200
1400
VCE (V)
103
102
VCE (V)
101
100
At
At
D =
Uccminus=Uccplus
single pulse
V GE
=
15
T jmax
V
T h
=
T j =
80
ºC
ºC
Switching mode :
3 level switching
copyright Vincotech
11
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Neutral Point T2, T3 / D2, D3
Neutral Point IGBT and Half Bridge FWD
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
3200
3200
2800
2400
2000
1600
1200
800
2800
2400
2000
1600
1200
800
400
400
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
350
25
ꢂs
°C
350
125
ꢂs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
1500
3200
2800
2400
2000
1600
1200
900
600
300
1200
Tj = 125°C
Tj = 125°C
Tj = 25°C
800
400
0
Tj = 25°C
0
0
2
4
6
8
10
12
0
1
2
3
4
VGE (V)
VF (V)
At
At
t p
=
t p
=
350
10
ꢂs
V
350
ꢂs
V CE
=
copyright Vincotech
12
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Neutral Point T2, T3 / D2, D3
Neutral Point IGBT and Half Bridge FWD
Figure 5
IGBT
Figure 6
FWD
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
80
60
40
20
0
30
25
20
15
10
5
Erec High T
Eoff High T
Eoff Low T
Erec Low T
Eon High T
Eon Low T
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
350
°C
V
25/125
350
°C
V
V CE
=
V CE
V GE
R gon
=
V GE
R gon
R goff
=
=
+15/ꢀ8
0,5
V
+15/ꢀ8
0,5
V
=
=
ꢁ
ꢁ
ꢁ
=
0,5
Figure 7
IGBT
Figure 8
FWD
Typical switching times as a
function of collector current
t = f(I C)
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
1
0,25
0,20
0,15
0,10
0,05
0,00
tdoff
tdon
trr High T
0,1
tf
tr
trr Low T
0,01
0,001
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I C (A)
I C (A)
With an inductive load at
At
T j =
R gon
R goff
=
T j =
125
°C
V
0,5
0,5
ꢁ
25/125
°C
V
V CE
V GE
=
=
V CE
V GE
R gon
=
350
ꢁ
350
=
=
+15/ꢀ8
V
+15/ꢀ8
0,5
V
=
ꢁ
copyright Vincotech
13
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Neutral Point T2, T3 / D2, D3
Neutral Point IGBT and Half Bridge FWD
Figure 9
FWD
Figure 10
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
150
120
90
60
30
0
1500
1200
900
600
300
0
Qrr High T
IRRM High T
IRRM Low T
Qrr Low T
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
I
C (A)
I C (A)
At
At
T j =
T j =
25/125
350
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V CE
V GE
R gon
=
=
=
+15/ꢀ8
0,5
V
+15/ꢀ8
0,5
V
=
=
ꢁ
ꢁ
Figure 11
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
30000
dIrec/dt T
di0/dt T
25000
20000
15000
10000
5000
0
0
500
1000
1500
2000
2500
I C (A)
At
T j =
25/125
°C
V
V CE
V GE
R gon
=
350
=
+15/ꢀ8
0,5
V
=
ꢁ
copyright Vincotech
14
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Neutral Point T2, T3 / D2, D3
Neutral Point IGBT and Half Bridge FWD
Figure 12
IGBT
Figure 13
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
10-1
10-1
10-2
10-2
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,05
0,02
0,01
0,02
0,01
0,005
0.000
0,005
0.000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
At
D =
At
D =
t
p / T
t p / T
IGBT thermal model values with phaseꢀchange material
FWD thermal model values with phaseꢀchange material
R th(j-s)
=
R thJC
=
R th(j-s)
=
R thJC
=
0,048
K/W
0,037
K/W
0,046
K/W
0,036
K/W
IGBT thermal model values
FWD thermal model values
With phaseꢀchange material
R (K/W) Tau (s)
With phaseꢀchange material
R (K/W) Tau (s)
0,014
0,008
0,008
0,011
0,004
0,001
0,001
4,40
0,007
0,011
0,009
0,014
0,003
0,002
5,78
1,38
0,26
0,05
0,02
0,002
1,10
0,24
0,050
0,017
0,003
0,0005
Figure 14
IGBT
Figure 15
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Collector current as a
function of heatsink temperature
I C = f(T h)
4000
3500
3000
2500
2000
1500
1000
500
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
0
50
100
150
200
o C)
T h (
o C)
0
50
100
150
200
T h
(
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
copyright Vincotech
15
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Neutral Point T2, T3 / D2, D3
Neutral Point IGBT and Half Bridge FWD
Figure 16
FWD
Figure 17
FWD
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Forward current as a
function of heatsink temperature
I F = f(T h)
4000
3500
3000
2500
2000
1500
1000
500
1800
1600
1400
1200
1000
800
600
400
200
0
0
0
50
100
150
200
0
50
100
150
200
Th
(
o C)
Th (
o C)
At
At
T j =
T j =
175
ºC
175
ºC
Figure 18
Reverse bias safe operating area
IGBT
I C = f(V CE
)
4000
IC MAX
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
200
400
600
800
V
CE (V)
At
Uccminus=Uccplus
Switching mode :
3 level switching
copyright Vincotech
16
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
copyright Vincotech
17
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Switching Definitions Half Bridge
General conditions
T j
=
=
=
125 °C
0,5 ꢁ
0,5 ꢁ
R gon
R goff
Figure 1
Half Bridge IGBT
Figure 2
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on
)
150
150
%
VCE
%
IC
125
125
tdoff
VGE
VGE
VCE
100
75
50
25
0
100
75
50
25
0
VGE 90%
VCE 90%
IC
tdon
tEoff
VCE 3%
VGE 10%
IC 1%
IC 10%
tEon
-25
-25
-0,3
-0,1
0,1
0,3
0,5
0,7
0,9
1,1
time (us)
2,8
3
3,2
3,4
3,6
3,8
time(us)
V GE (0%) =
ꢀ10
V
V GE (0%) =
ꢀ10
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
350
1816
0,37
1,00
V
350
1816
0,28
0,69
V
A
A
t doff
=
=
ꢂs
ꢂs
t don
=
=
ꢂs
ꢂs
t E off
t E on
Figure 3
Half Bridge IGBT
Figure 4
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
150
150
%
VCE
%
Ic
125
125
fitted
IC
VCE
100
100
IC 90%
IC 90%
75
75
tr
IC 60%
50
50
25
IC 40%
25
IC 10%
IC 10%
0
0
tf
-25
-25
0,1
0,2
0,3
0,4
0,5
0,6
0,7
time(us)
0,8
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
V C (100%) =
I C (100%) =
t f =
350
V
V C (100%) =
I C (100%) =
t r =
350
V
1816
0,10
A
1816
0,11
A
ꢂs
ꢂs
copyright Vincotech
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09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Switching Definitions Half Bridge
Figure 5
Half Bridge IGBT
Figure 6
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
%
125
%
IC
1%
Poff
Eon
Eoff
100
75
100
75
50
50
Pon
25
25
VCE 3%
VGE 90%
VGE 10%
0
0
tEon
tEoff
-25
-25
2,8
3
3,2
3,4
3,6
3,8
-0,2
0
0,2
0,4
0,6
0,8
1
time (us)
time(us)
P off (100%) =
E off (100%) =
635,53
107,89
1,00
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
635,53
kW
mJ
ꢂs
48,01
0,69
t E off
=
t E on =
Figure 7
Buck FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
I
RRM
10%
IRRM 90%
IRRM 100%
-50
-100
3,2
3,3
3,4
3,5
3,6
3,7
3,8
time(us)
V d (100%) =
I d (100%) =
350
V
1816
ꢀ883
0,30
A
I RRM (100%) =
t rr
A
=
ꢂs
copyright Vincotech
19
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Switching Definitions Half Bridge
Figure 8
Buck FWD
Figure 9
Buck FWD
Turnꢀon Switching Waveforms & definition of t Qrr
Turnꢀon Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec
)
125
125
%
%
Qrr
Id
Erec
100
75
50
25
0
100
tErec
75
tQrr
50
25
Prec
0
-25
-50
-25
2,9
3,2
3,5
3,8
4,1
4,4
2,9
3,2
3,5
3,8
4,1
4,4
time(us)
time(us)
I d (100%) =
Q rr (100%) =
1816
A
P rec (100%) =
E rec (100%) =
635,53
24,83
0,65
kW
mJ
ꢂs
124,39
0,65
ꢂC
ꢂs
t Q rr
=
t E rec =
copyright Vincotech
20
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Switching Definitions Neutral Point
General conditions
T j
=
=
=
125 °C
0,5 ꢁ
0,5 ꢁ
R gon
R goff
Figure 1
Neutral Point IGBT
Figure 2
Neutral Point IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
150
%
200
%
IC
125
tdoff
150
100
VGE
VCE
VGE 90%
VCE
90%
100
75
50
25
0
VGE
tdon
IC
50
tEoff
VCE 3%
VGE 10%
IC 10%
tEon
0
VCE
IC
1%
-50
-25
2,85
2,97
3,09
3,21
3,33
3,45
3,57
time(us)
-0,2
0
0,2
0,4
0,6
0,8
time (us)
V GE (0%) =
ꢀ8
V
V
V
A
V GE (0%) =
ꢀ8
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
350
350
1797
0,20
0,42
V
1797
0,27
0,55
A
t doff
=
=
ꢂs
ꢂs
t don
=
=
ꢂs
ꢂs
t E off
t E on
Figure 3
Neutral Point IGBT
Figure 4
Neutral Point IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
150
200
%
%
VCE
125
fitted
IC
Ic
150
100
Ic
VCE
90%
100
75
IC
90%
Ic
60%
tr
50
50
Ic
40%
25
IC 10%
Ic 10%
0
tf
0
-50
-25
3
3,1
3,2
3,3
3,4
3,5
0,1
0,2
0,3
0,4
0,5
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
350
V
V C (100%) =
I C (100%) =
t r =
350
V
1797
0,065
A
1797
A
ꢂs
0,094
ꢂs
copyright Vincotech
21
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Switching Definitions Neutral Point
Figure 5
Neutral Point IGBT
Figure 6
Neutral Point IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
%
125
%
IC
1%
Poff
Eon
Eoff
100
100
75
50
75
50
Pon
25
25
Uge 90%
Uge 10%
Uce 3%
0
0
tEon
tEoff
-25
-25
2,9
3
3,1
3,2
3,3
3,4
3,5
-0,1
0
0,1
0,2
0,3
0,4
0,5
0,6
time (us)
time(us)
P off (100%) =
E off (100%) =
629,03
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
629,026 kW
71,68
0,55
33,50
0,42
mJ
ꢂs
t E off
=
t E on =
Figure 7
Neutral Point FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Ud
fitted
0
IRRM 10%
-50
IRRM 90%
IRRM 100%
-100
-150
3,1
3,2
3,3
3,4
3,5
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
350
V
1797
ꢀ1244
0,18
A
A
t rr
=
ꢂs
copyright Vincotech
22
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Switching Definitions Neutral Point
Figure 8
Neutral Point FWD
Figure 9
Neutral Point FWD
Turnꢀon Switching Waveforms & definition of t Qrr
Turnꢀon Switching Waveforms & definition of t Erec
(t Qrr= integrating time for Q rr
)
(t Erec= integrating time for E rec
)
150
%
125
%
Id
Qrr
100
100
Erec
tErec
75
tQint
50
0
50
Prec
25
-50
-100
0
-25
3
3,2
3,4
3,6
3,8
4
4,2
4,4
time(us)
3
3,2
3,4
3,6
3,8
4
4,2
4,4
time(us)
I d (100%) =
Q rr (100%) =
1797
A
P rec (100%) =
E rec (100%) =
629,03
kW
mJ
ꢂs
165,13
1,00
ꢂC
ꢂs
35,92
1,00
t Qint
=
t E rec =
copyright Vincotech
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09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Outline
Outline
Driver pins
Low current connections
Pin
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
X1
4,5
Y1
Function
Group
T1
M6
screw
X2
Y2
Function
78,65
G1ꢀ1
4,5
81,55
78,65
81,55
30,15
30,15
68,4
68,4
68,4
68,4
44,65
44,65
46
E1ꢀ1
G1ꢀ2
T1
T1
T1
T1
T1
T2
T2
T2
T2
T2
T2
T3
T3
T3
T3
T4
T4
T4
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0
0
0
Phase
Phase
Phase
DC+
39,5
39,5
19,45
24,55
1,95
4,85
39,15
22
E1ꢀ2
44
0
DC+ desat
DC+ desat
E2ꢀ1
0
110,4
110,4
110,4
0
22
Neutral
DCꢀ
44
G2ꢀ1
101
123
145
Phase
Phase
Phase
DC+
G2ꢀ2
0
1.10 42,05
1.11 19,45
1.12 24,55
E2ꢀ2
0
GND desat
GND desat
G3ꢀ1
2.10 101
2.11 123
2.12 145
2.13 202
2.14 224
2.15 246
2.16 202
2.17 224
2.18 246
110,4
110,4
110,4
0
Neutral
DCꢀ
1.13
1.14
1.15
1.16
ꢀ2,2
ꢀ2,2
46,2
46,2
48,9
46
E3ꢀ1
Phase
Phase
Phase
DC+
G3ꢀ2
0
48,9
29,2
32,1
29,2
E3ꢀ2
0
1.17 ꢀ6,75
1.18 ꢀ6,75
1.19 50,75
E4ꢀ1
110,4
110,4
110,4
G4ꢀ1
Neutral
DCꢀ
E4ꢀ2
1.20 50,75
1.21 67,65
1.22 67,65
32,1
86,7
89,8
G4ꢀ2
T4
Rt1
Rt1
Therm12
Therm11
1.23 105,5
1.24 105,5
78,65
81,55
G1ꢀ3
E1ꢀ3
T1
T1
1.25 140,5
1.26 140,5
78,65
81,55
G1ꢀ4
E1ꢀ4
T1
T1
T1
T1
1.27 120,45 30,15
1.28 125,55 30,15
DC+ desat
DC+ desat
1.29 102,95
1.30 105,85
1.31 140,15
1.32 143,05
68,4
68,4
68,4
68,4
E2ꢀ3
G2ꢀ3
T2
T2
T2
T2
T2
T2
T3
T3
T3
T3
T4
T4
T4
T4
Rt2
Rt2
T1
T1
T1
T1
G2ꢀ4
E2ꢀ4
1.33 120,45 44,65
1.34 125,55 44,65
GND desat
GND desat
G3ꢀ3
1.35
1.36
98,8
98,8
46
48,9
46
E3ꢀ3
1.37 147,2
1.38 147,2
1.39 94,25
1.40 94,25
1.41 151,75
1.42 151,75
1.43 168,65
1.44 168,65
1.45 206,5
1.46 206,5
1.47 241,5
1.48 241,5
G3ꢀ4
48,9
29,2
32,1
29,2
32,1
86,7
89,8
78,65
81,55
78,65
81,55
E3ꢀ4
E4ꢀ3
G4ꢀ3
E4ꢀ4
G4ꢀ4
Therm22
Therm21
G1ꢀ5
E1ꢀ5
G1ꢀ6
E1ꢀ6
1.49 221,45 30,15
1.50 226,55 30,15
DC+ desat
DC+ desat
T1
T1
1.51 203,95
1.52 206,85
1.53 241,15
1.54 244,05
68,4
68,4
68,4
68,4
E2ꢀ5
G2ꢀ5
T2
T2
T2
T2
T2
T2
T3
T3
T3
T3
G2ꢀ6
E2ꢀ6
1.55 221,45 44,65
1.56 226,55 44,65
GND desat
GND desat
G3ꢀ5
1.57 199,8
1.58 199,8
1.59 248,2
1.60 248,2
46
48,9
46
E3ꢀ5
G3ꢀ6
Driver pins
48,9
E3ꢀ6
Pin
X1
Y1
Function
Group
1.61 195,25
1.62 195,25
1.63 252,75
29,2
32,1
29,2
E4ꢀ5
G4ꢀ5
E4ꢀ6
T4
T4
T4
1.64 252,8
1.65 269,7
1.66 269,7
32,1
86,7
89,8
G4ꢀ6
T4
Therm32
Therm31
Rt3
Rt3
copyright Vincotech
24
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout
Ordering Code & Marking
Version
Oredering Code
Standart
70ꢀW612M3A1K8SC02ꢀL300FP70
Name
NNꢀNNNNNNNNNNNNNNꢀNNNNNNNN
Date code
UL & Vinco
Lot
Serial
Date code
Text
WWYY
UL VIN
LLLLL
SSSS
Lot
Type&Ver
Lot number
Serial
Date code
Serial
Datamatrix
TTTTꢀTTT
LLLLL
SSSS
WWYY
VIN
UL
Pinout
Identification
Current
ID
Component
IGBT
Voltage
Function
Comment
T1, T4
D5, D6
1200V
650V
650V
1200V
ꢀ
1800A
Half Bridge Switch
FWD
1800A
1800A
1800A
ꢀ
Neutral Point Diode
Neutral Point Switch
Half Bridge Diode
Thermistor
T2, T3
IGBT
D1, D4
FWD
Rt1, Rt2, Rt3
NTC
copyright Vincotech
25
09 Mar. 2016 / Revision 1
70ꢀW612M3A1K8SC02ꢀL300FP70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
5
Handling instructions for Widebody 3phase packages see vincotech.com website.
Package data
Package data for Widebody 3phase packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
70ꢀW612M3A1K8SC02ꢀL300FP70ꢀD1ꢀ14
09 Marc. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
26
09 Mar. 2016 / Revision 1
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