70-W212NMA300SC-M208P [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 70-W212NMA300SC-M208P |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总28页 (文件大小：2896K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W212NMA300SC-M208P
datasheet
VINcoMNPC X4
Features
1200 V / 300 A
VINco X4 housing
● Mixed-voltage NPC
● Low inductive
● High power screw interface
● Integrated DC-snubber capacitors
Target Applications
● Solar inverter
● UPS
Schematic
● High speed motor drive
Types
● 70-W212NMA300SC-M208P
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Buck Switch ( T1 , T4 )
V CE
I C
Collector-emitter breakdown voltage
1200
270
900
646
±20
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC collector current
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Repetitive peak collector current
Power dissipation
A
W
V
Gate-emitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
10
µs
V
V GE = 15 V
800
V CE max = 1200V
T vj max= 150°C
I cmax
T jmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
600
175
A
°C
Buck Diode ( D2 , D3 )
V RRM
Peak Repetitive Reverse Voltage
600
244
V
A
I F
T j = T jmax
T s = 80 °C
T vj < 150°C
DC forward current
Surge forward current
I2t-value
I FSM
698
A
A2s
A
t p = 10 ms, sine halfwave
I 2
I FRM
P tot
t
2440
T vj < 150°C
T s = 80 °C
Repetitive peak forward current
Power dissipation per FWD
tP = 1 ms
600
357
175
T j = T jmax
W
T jmax
Maximum Junction Temperature
°C
copyright Vincotech
1
28 Sep. 2021 / Revision 7
70-W212NMA300SC-M208P
datasheet
Maximum Ratings
T j = 25 °C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Boost Switch ( T2 , T3 )
V CE
I C
Collector-emitter breakdown voltage
600
252
900
476
±20
V
A
T j = T jmax
T s = 80 °C
T s = 80 °C
DC collector current
I CRM
P tot
V GE
t p limited by T jmax
T j = T jmax
Repetitive peak collector current
Power dissipation
A
W
V
Gate-emitter peak voltage
Short circuit ratings
t SC
V CC
T j ≤ 150 °C
6
µs
V
V GE = 15 V
360
V CE max = 1200V
T vj max= 150°C
I cmax
T jmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
600
175
A
°C
Boost Diode ( D1 , D4 )
V RRM
Peak Repetitive Reverse Voltage
1200
222
V
A
I F
T j = T jmax
T s = 80 °C
T j=150°C
DC forward current
Surge forward current
I2t-value
I FSM
1720
3700
A
A2s
A
t p=10ms , sin 180°
I 2
I FRM
P tot
t
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation per FWD
900
476
175
T s = 80 °C
W
T jmax
Maximum Junction Temperature
°C
DC link Capacitor
V MAX
T c=25°C
Max.DC voltage
630
V
General Module Properties
Material of module baseplate
Cu
Material of internal isulation
Al2O3
Thermal Properties
T stg
T op
Storage temperature
-40…+125
°C
°C
-40…+(T jmax - 25)
Operation temperature under switching condition
Isolation Properties
DC Test Voltage*
AC Voltage
t p = 2 s
6000
2500
V
V isol
Isolation voltage
t p = 1 min
V
Creepage distance
Clearance
min 12,7
min 12,7
>200
mm
mm
Comparative Tracking Index
CTI
*100% tested in production
28 Sep. 2021 / Revision 7
copyright Vincotech
2
70-W212NMA300SC-M208P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V GS [V]
V CE [V] I F [A]
V DS [V] I D [A]
T j [°C]
Min
Max
Buck Switch ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl.
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,012
25
5
5,8
6,5
2,4
V
V
25
125
1,6
2,03
2,29
15
0
300
1200
0
25
25
0,6
mA
nA
Ω
20
3000
2,5
25
125
25
125
25
125
25
125
25
125
25
201
212
42
50
260
318
50
82
8
Rise time
ns
t d(off)
t f
Turn-off delay time
R goff = 1 Ω
R gon = 1 Ω
±15
350
300
Fall time
E on
Turn-on energy loss
11
9
16
mWs
pF
E off
C ies
C oss
C rss
Q G
Turn-off energy loss
125
Input capacitance
17600
1160
940
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
960
300
1400
nC
λ paste = 0,8 W/mK
(P12)
R th(j-s)
Thermal resistance junction to sink
0,15
K/W
Buck Diode ( D2 , D3 )
FWD forward voltage
25
125
25
125
25
125
25
125
25
125
25
1,2
1,61
1,58
180
217
154
274
14
2,2
V F
I RRM
300
300
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
Q rr
R gon = 1 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
±15
350
µC
25
2014
1364
3
( di rf/dt )max
E rec
A/µs
mWs
125
5
λ paste = 0,8 W/mK
(P12)
R th(j-s)
Thermal resistance junction to sink
0,27
K/W
Boost Switch ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl.
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
0,0048
300
25
5
1
5,8
6
V
V
25
125
1,59
1,82
2,2
15
0
600
0
25
25
0,1
mA
nA
Ω
20
3000
1
25
125
25
125
25
125
25
125
25
125
25
179
185
29
34
231
258
43
65
4
Rise time
ns
t d(off)
t f
Turn-off delay time
R goff = 1 Ω
R gon = 1 Ω
±15
350
300
Fall time
E on
Turn-on energy loss
7
8
12
mWs
pF
E off
C ies
C oss
C rss
Q G
Turn-off energy loss
125
Input capacitance
18800
1200
580
Output capacitance
f = 1 MHz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
480
75
1860
nC
λ paste = 0,8 W/mK
(P12)
R th(j-s)
Thermal resistance junction to sink
0,20
K/W
28 Sep. 2021 / Revision 7
copyright Vincotech
3
70-W212NMA300SC-M208P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] I C [A]
V GE [V]
V GS [V]
V CE [V] I F [A]
V DS [V] I D [A]
T j [°C]
Min
Max
Boost Diode ( D1 , D4 )
FWD forward voltage
25
125
1
2,28
2,40
2,9
V F
300
V
μA
I r
I RRM
Reverse leakage current
1200
25
480
25
125
25
125
25
125
25
125
25
125
309
384
62
152
18
Peak reverse recovery current
Reverse recovery time
A
t rr
ns
Q rr
R gon = 1 Ω
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
350
300
µC
36
14916
10204
4
( di rf/dt )max
E rec
A/µs
mWs
9
λ paste = 0,8 W/mK
(P12)
R th(j-s)
Thermal resistance junction to sink
0,20
K/W
DC link Capacitor
C value
C
2 * 0,68
µF
Stray inductance of on board capacitors
Series resistance of on board capacitors
ESL
ESR
26/2
14/2
nH
mΩ
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
R
Δ R/R
P
25
100
25
25
25
25
25
22000
Ω
%
R 100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B (25/100)
B-value
K
Vincotech NTC Reference
B
Module Properties
Module inductance (from chips to PCB)
Module inductance (from PCB to PCB using Intercon
Resistance of Intercon boards (from PCB to PCB usin
Mounting torque
LsCE
5
3
nH
nH
mΩ
Nm
Nm
Nm
g
LsCE
Tc=25°C, per switch
Rcc'1+EE'
1,5
Screw M4 - mounting according to valid application note
VINcoX-*-HI
Screw M5 - mounting according to valid application note
VINcoX-*-HI
Screw M6 - mounting according to valid application note
VINcoX-*-HI
M
M
M
G
2
4
2,2
6
Mounting torque
Terminal connection torque
Weight
2,5
5
710
28 Sep. 2021 / Revision 7
copyright Vincotech
4
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
1000
1000
800
600
400
200
800
600
400
200
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
350
25
μs
°C
350
125
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
350
300
250
200
150
100
50
1000
800
600
400
Tj = Tjmax-25°C
Tj = Tjmax-25°C
200
Tj = 25°C
Tj = 25°C
0
0
0
0
0,5
1
1,5
2
2,5
3
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
t p
=
t p
=
350
10
μs
V
350
μs
V CE
=
28 Sep. 2021 / Revision 7
copyright Vincotech
5
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
30
25
20
15
10
5
30
25
20
15
10
5
Eon High T
Eoff High T
Eon High T
Eon Low T
Eoff Low T
Eoff High T
Eon Low T
Eoff Low T
0
0
0
100
200
300
400
500
600
0
2
4
6
8
10
I
C (A)
R
G ( Ω)
With an inductive load at
With an inductive load at
T j =
T j =
°C
V
°C
V
25/125
350
±15
1
25/125
350
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
V
=
I C =
Ω
Ω
300
A
=
1
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
8
6
4
2
0
8
6
4
2
0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
100
200
300
400
500
600
I C (A)
0
2
4
6
8
10
R G ( Ω)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
±15
V
=
I C =
Ω
300
A
28 Sep. 2021 / Revision 7
copyright Vincotech
6
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
1,00
tdoff
tdon
tdoff
tdon
tf
0,10
0,10
tf
tr
tr
0,01
0,01
0,00
0,00
0
100
200
300
400
500
600
0
2
4
6
8
10
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
T j =
T j =
125
350
±15
1
°C
V
125
350
±15
300
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
1
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,4
0,3
0,2
0,1
0,0
0,4
trr
High T
trr High T
0,3
0,2
0,1
trr Low T
trr Low T
0,0
0
0
100
200
300
400
500
600
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
25/125
350
°C
V
V CE
V GE
=
=
V
V
Ω
300
A
R gon
=
V GE =
±15
V
28 Sep. 2021 / Revision 7
copyright Vincotech
7
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
40
30
Qrr High T
25
20
15
10
5
Qrr High T
30
Qrr Low T
20
10
0
Qrr Low T
0
0
2
4
6
8
10
I C (A)
R gon ( Ω)
0
150
300
450
600
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V CE
V GE
=
=
V
300
A
R gon
=
V GE =
Ω
±15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
300
300
250
200
150
100
50
IRRM High T
250
200
150
100
50
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
2
4
6
8
10
0
100
200
300
400
500
600
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
25/125
350
°C
V
V CE
V GE
R gon
=
V
V
Ω
=
300
A
=
V GE =
±15
V
28 Sep. 2021 / Revision 7
copyright Vincotech
8
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
12000
10000
dIrec/dt T
dIrec/dt T
dIo/dt T
dIo/dt T
10000
8000
6000
4000
2000
0
8000
6000
4000
2000
0
0
2
4
6
8
10
0
100
200
300
400
500
600
I
C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
=
V
300
A
=
V GE =
Ω
±15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
100
10-1
10-2
10-3
10-1
10-2
10-3
D = 0,5
0,2
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
0,1
0,05
0,02
0,01
0,005
0,000
10-5
10-4
10-3
10-2
10-1
100
101
102
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
102
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,15
K/W
0,27
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
4,1E-02 3,0E+00
3,4E-02 4,9E-01
4,4E-02 5,7E-02
1,8E-02 1,4E-02
9,1E-03 5,7E-04
R (K/W) Tau (s)
2,5E-02 9,7E+00
5,8E-02 1,8E+00
4,0E-02 3,0E-01
8,5E-02 4,3E-02
3,8E-02 9,8E-03
1,9E-02 5,4E-04
28 Sep. 2021 / Revision 7
copyright Vincotech
9
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
1200
1000
800
600
400
200
0
400
300
200
100
0
T s (
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
800
600
400
200
0
400
300
200
100
0
0
50
100
150
200
T s (
o C)
0
50
100
150
200
T s (
o C)
At
At
T j =
T j =
175
°C
175
°C
28 Sep. 2021 / Revision 7
copyright Vincotech
10
70-W212NMA300SC-M208P
datasheet
Buck
half bridge IGBT and neutral point FWD
figure 25.
IGBT
figure 26.
IGBT
Safe operating area as a function
of collector-emitter voltage
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
18
16
14
12
10
8
103
240 V
960 V
102
101
6
100
4
10-1
2
0
0
400
800
1200
1600
2000
2400
102
103
101
Q g (nC)
100
VCE (V)
At
At
D =
single pulse
I C
=
300
A
T s =
80
ºC
V GE
=
±15
T jmax
V
T j =
ºC
figure 27.
Reverse bias safe operating area
IGBT
I C = f(V CE
)
700
IC MAX
600
500
400
300
200
100
0
0
200
400
600
800
1000
1200
1400
VCE (V)
At
T j =
T jmax-25
ºC
3 level switching
Uccminus=Uccplus
Switching mode :
28 Sep. 2021 / Revision 7
copyright Vincotech
11
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT and half bridge FWD
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
1000
1000
800
600
400
200
800
600
400
200
0
0
0
0
1
2
3
4
5
VCE (V)
1
2
3
4
VCE (V)
5
At
At
t p
=
t p =
350
25
μs
°C
350
125
μs
°C
T j =
T j =
V GE from
V GE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
FWD
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
350
300
250
200
150
100
50
1000
800
600
400
200
0
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
Tj = Tjmax-25°C
0
0
2
4
6
8
10
12
0
1
2
3
4
5
VGE (V)
VF (V)
At
At
t p
=
t p
=
350
10
μs
V
350
μs
V CE
=
28 Sep. 2021 / Revision 7
copyright Vincotech
12
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT and half bridge FWD
figure 5.
IGBT
figure 6.
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
20
15
10
5
30
25
20
15
10
5
Eon High T
Eoff High T
Eon Low T
Eoff Low T
Eon High T
Eoff High T
Eoff Low T
Eon Low T
0
0
0
100
200
300
400
500
600
0
2
4
6
8
10
I
C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
T j =
T j =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
V
=
I C =
Ω
Ω
300
A
=
1
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
15
12
9
10
Erec High T
8
Erec High T
6
Erec Low T
6
4
Erec Low T
3
2
0
0
0
100
200
300
400
500
600
0
2
4
6
8
10
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
V CE
V GE
=
=
=
V
±15
V
=
I C =
Ω
300
A
28 Sep. 2021 / Revision 7
copyright Vincotech
13
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT and half bridge FWD
figure 9.
IGBT
figure 10.
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
1
tdoff
tdon
tdoff
tdon
tf
0,1
0,1
tr
tf
0,01
0,01
tr
0,001
0,001
0
100
200
300
400
500
600
0
2
4
6
8
10
I
C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
T j =
T j =
125
350
±15
1
°C
V
125
350
±15
300
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
Ω
Ω
A
=
1
figure 11.
FWD
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,2
0,2
0,1
0,1
0,0
0,8
trr High T
trr High T
0,6
0,4
0,2
trr Low T
trr Low T
0
0
0
100
200
300
400
500
600
2
4
6
8
10
R gon ( Ω)
I C (A)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
25/125
350
°C
V
V CE
V GE
=
=
V
V
Ω
300
A
R gon
=
V GE =
±15
V
28 Sep. 2021 / Revision 7
copyright Vincotech
14
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT and half bridge FWD
figure 13.
FWD
figure 14.
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
50
40
30
20
10
0
40
Qrr High T
Qrr High T
30
20
10
Qrr Low T
Qrr Low T
0
0
0
100
200
300
400
500
600
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
25/125
350
°C
V
V CE
V GE
=
=
V
V
Ω
300
A
R gon
=
V GE =
±15
V
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
600
450
300
150
0
500
IRRM High T
400
300
200
100
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
100
200
300
400
500
600
I C (A)
2
4
6
8
10
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
25/125
350
°C
V
V CE
V GE
R gon
=
V
V
Ω
=
300
A
=
V GE =
±15
V
28 Sep. 2021 / Revision 7
copyright Vincotech
15
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT and half bridge FWD
figure 17.
FWD
figure 18.
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
20000
25000
dIrec/dt T
dIrec/dt T
dI0/dt T
di0/dt T
20000
15000
10000
5000
0
15000
10000
5000
0
0
100
200
300
400
500
600
0
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125
350
±15
1
°C
V
25/125
350
°C
V
V CE
V GE
R gon
=
=
V
300
A
=
V GE
=
Ω
±15
V
figure 19.
IGBT
figure 20.
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z th(j-s) = f(t p)
Z th(j-s) = f(t p)
100
100
10-1
10-2
10-3
10-1
10-2
10-3
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-5
10-4
10-3
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
t p (s)
t p (s)
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
0,20
K/W
0,20
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
2,3E-02 9,7E+00
6,4E-02 1,9E+00
2,8E-02 3,6E-01
5,9E-02 4,3E-02
1,5E-02 8,0E-03
1,1E-02 4,7E-04
R (K/W) Tau (s)
1,2E-02 1,0E+01
4,0E-02 1,6E+00
4,5E-02 3,0E-01
6,9E-02 4,5E-02
2,0E-02 8,9E-03
1,3E-02 8,0E-04
28 Sep. 2021 / Revision 7
copyright Vincotech
16
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT and half bridge FWD
figure 21.
IGBT
figure 22.
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
1000
800
600
400
200
0
400
300
200
100
0
o C)
0
50
100
150
200
T s (
o C)
T s
(
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
figure 23.
Power dissipation as a
FWD
figure 24.
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
1000
800
600
400
200
0
400
300
200
100
0
0
50
100
150
200
T s (
o C)
T s (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
28 Sep. 2021 / Revision 7
copyright Vincotech
17
70-W212NMA300SC-M208P
datasheet
Boost
neutral point IGBT
figure 25.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
1400
IC MAX
1200
1000
800
600
400
200
0
0
100
200
300
400
500
600
700
VCE (V)
At
T j =
T jmax-25
ºC
Uccminus=Uccplus
Switching mode :
3 level switching
28 Sep. 2021 / Revision 7
copyright Vincotech
18
70-W212NMA300SC-M208P
datasheet
Thermistor
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
28 Sep. 2021 / Revision 7
copyright Vincotech
19
70-W212NMA300SC-M208P
datasheet
Switching Definitions Buck IGBT
General conditions
T j
=
=
=
125 °C
1 Ω
1 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
150
200
%
%
IC
VCE
tdoff
150
100
50
0
VCE 90%
IC
VGE 90%
VCE
100
VGE
tdon
tEoff
50
IC 1%
VCE 3%
IC 10%
VGE 10%
VGE
0
tEon
-50
-50
-0,3
0
0,3
0,6
0,9
1,2
3,9
4,1
4,3
4,5
4,7
time (us)
time(us)
V GE (0%) =
-15
V
V
V
A
V GE (0%) =
-15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V GE (100%) =
V C (100%) =
I C (100%) =
V
350
400
0,32
1,04
350
400
0,21
0,54
V
A
t doff
=
=
μs
μs
t don
=
=
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
200
fitted
%
%
VCE
IC
IC
100
150
IC 90%
75
50
25
0
100
IC 60%
IC 90%
tr
IC 40%
50
VCE
IC 10%
IC 10%
0
tf
-50
-25
4,1
4,2
4,3
4,4
4,5
0,1
0,2
0,3
0,4
0,5
0,6
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
350
V
A
V C (100%) =
I C (100%) =
t r =
350
400
0,05
V
400
A
0,08
μs
μs
28 Sep. 2021 / Revision 7
copyright Vincotech
20
70-W212NMA300SC-M208P
datasheet
Switching Definitions Buck IGBT
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
125
%
%
IC 1%
Pon
Eon
Eoff
100
75
50
25
0
100
Poff
75
50
25
VGE 90%
VGE10%
VCE3%
0
tEon
tEoff
-25
-25
3,9
4,1
4,3
4,5
4,7
4,9
-0,2
0,2
0,6
1
1,4
time (us)
time(us)
P off (100%) =
E off (100%) =
140
kW
mJ
μs
P on (100%) =
E on (100%) =
140
kW
mJ
μs
15,62
1,04
11,38
0,54
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
-50
IRRM 10%
IRRM 90%
IRRM 100%
-100
4,2
4,3
4,4
4,5
4,6
4,7
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
350
V
400
A
-217
0,27
A
t rr
=
μs
28 Sep. 2021 / Revision 7
copyright Vincotech
21
70-W212NMA300SC-M208P
datasheet
Switching Definitions Buck IGBT
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
%
150
%
Qrr
Id
100
Erec
100
tQrr
tErec
50
50
0
0
-50
Prec
-50
-100
4
4,2
4,4
4,6
4,8
5
4
4,2
4,4
4,6
4,8
5
time(us)
time(us)
I d (100%) =
Q rr (100%) =
400
A
P rec (100%) =
E rec (100%) =
140
kW
mJ
μs
25,32
0,58
μC
μs
5,33
0,58
t Q rr
=
t E rec =
Buck IGBT switching measurement circuit
figure 10.
28 Sep. 2021 / Revision 7
copyright Vincotech
22
70-W212NMA300SC-M208P
datasheet
Switching Definitions Boost IGBT
General conditions
T j
=
=
=
125 °C
1 Ω
1 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on
)
125
250
tdoff
%
%
IC
100
200
VGE 90%
VCE 90%
75
50
25
0
150
IC
VCE
100
tEoff
VGE
tdon
50
VCE 3%
VCE
VGE 10%
IC 10%
tEon
0
IC
VGE
1%
-25
-50
-0,1
0,1
0,3
0,5
0,7
3,9
4,1
4,3
4,5
4,7
time (us)
time(us)
V GE (0%) =
-15
15
V
V GE (0%) =
-15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
350
302
0,23
0,58
V
350
302
0,19
0,38
V
A
A
t doff
=
=
μs
μs
t don
=
=
μs
μs
t E off
t E on
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
%
250
%
fitted
VCE
IC
100
75
50
25
0
200
Ic
90%
150
Ic
60%
VCE
100
IC 90%
Ic
40%
tr
50
Ic 10%
Ic
IC 10%
tf
0
-25
-50
0,10
0,15
0,20
0,25
0,30
0,35
time (us)
0,40
4,1
4,15
4,2
4,25
4,3
4,35
4,4
time(us)
V C (100%) =
I C (100%) =
t f =
350
V
V C (100%) =
I C (100%) =
t r =
350
V
302
A
302
A
0,065
μs
0,034
μs
28 Sep. 2021 / Revision 7
copyright Vincotech
23
70-W212NMA300SC-M208P
datasheet
Switching Definitions Boost IGBT
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
125
%
%
Ic
1%
Pon
Eon
Eon
100
75
50
25
0
100
75
50
25
0
Poff
Uge 90%
Uce 3%
Uge 10%
tEoff
tEon
-25
-25
3,9
4
4,1
4,2
4,3
4,4
4,5
time(us)
-0,2
0
0,2
0,4
0,6
0,8
time (us)
P off (100%) =
E off (100%) =
106
kW
mJ
μs
P on (100%) =
E on (100%) =
106
kW
mJ
μs
11,52
0,58
13,39
0,38
t E off
=
t E on =
figure 7.
FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
fitted
IRRM 10%
Ud
0
-50
-100
-150
IRRM 90%
IRRM 100%
4,1
4,15
4,2
4,25
4,3
4,35
4,4
time(us)
V d (100%) =
I d (100%) =
350
V
302
A
I RRM (100%) =
t rr
-384
0,15
A
=
μs
28 Sep. 2021 / Revision 7
copyright Vincotech
24
70-W212NMA300SC-M208P
datasheet
Switching Definitions Boost IGBT
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Qrr= integrating time for Q rr)
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
125
%
%
Erec
Id
Qrr
100
100
tQint
tErec
50
75
0
-50
50
25
Prec
0
-100
-150
-25
4
4,3
4,6
4,9
5,2
5,5
4
4,3
4,6
4,9
5,2
5,5
time(us)
time(us)
I d (100%) =
Q rr (100%) =
302
A
P rec (100%) =
E rec (100%) =
106
kW
mJ
μs
35,60
0,33
μC
μs
8,89
0,33
t Qint
=
t E rec =
Boost IGBT switching measurement circuit
figure 10.
28 Sep. 2021 / Revision 7
copyright Vincotech
25
70-W212NMA300SC-M208P
datasheet
Ordering Code & Marking
Version
Ordering Code
without PCM
with PCM
70-W612M3A300SC-M208P
70-W612M3A300SC-M208P-/3/
Name
Date code
UL
&
VIN
Lot
Serial
Name
Text
Date code
Lot
Serial
UL
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
Date code
WWYY
LLLLL
SSSS
Type&Ver
Lot number
Serial
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Vincotech
Outline
Driver pins
Y1
Capacitor positions
Pin
1.1
X1
Function
Capacitor
X4
Y4
4,5
78,65
81,55
78,65
81,55
68,4
68,4
68,4
68,4
46
G1-1
E1-1
4.1
4.2
4.3
4.4
-0,75
44,8
-0,3
44,8
16,65
16,65
93,25
93,25
1.2
4,5
1.3
39,5
G1-2
1.4
39,5
E1-2
1.5
1,95
E2-1
1.6
4,85
G2-1
1.7
39,15
42,05
-2,2
G2-2
1.8
E2-2
1.9
G3-1
1.10
1.11
1.12
1.13
1.14
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
-2,2
48,9
46
E3-1
46,2
G3-2
46,2
48,9
29,2
32,1
29,2
32,1
30,15
30,15
44,65
44,65
86,7
89,8
E3-2
-6,75
-6,75
50,75
50,75
19,45
24,55
19,45
24,55
67,65
67,65
E4-1
G4-1
E4-2
G4-2
Desat-DC+
Desat-DC+
Desat-GND
Desat-GND
NTC
NTC
Power interconnections
M6 screw
2.1
X2
0
Y2
0
Function
Phase
Phase
Phase
DC+
2.2
22
44
0
0
2.3
0
2.4
110,4
110,4
110,4
2.5
22
44
Neutral
DC-
2.6
Low current connections
M4 screw
3.1
X3
Y3
Function
DC+
DC+
CE
-37,4
81,4
-37,4
81,4
-37,4
81,4
-37,4
81,4
89,8
89,8
65,2
65,2
45,2
45,2
20,6
20,6
3.2
3.3
3.4
CE
3.5
Phase
Phase
DC-
3.6
3.7
3.8
DC-
28 Sep. 2021 / Revision 7
copyright Vincotech
26
70-W212NMA300SC-M208P
datasheet
Pinout
NOTE: Driver pins for parallel devices are not connectedinside the module!
Gx-1 to Gx-2 and Ex-1 to Ex-2 shall br connected on customer PCB!
Where x = 1 to 4
Identification
Current
ID
Component
Voltage
Function
Comment
T1, T4
T2, T3
D2, D3
D1, D4
C
IGBT
IGBT
1200 V
600 V
600 V
1200 V
630 V
300 A
300 A
300 A
300 A
Buck Switch
Boost Switch
Buck Diode
FWD
FWD
Boost Diode
Capacitor
NTC
DC Link Capacitor
Thermistor
NTC
28 Sep. 2021 / Revision 7
copyright Vincotech
27
70-W212NMA300SC-M208P
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
variable*
Handling instructions for VINco X4 packages see vincotech.com website.
Package data
Package data for VINco X4 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
*10 without PCM
6 with PCM
Document No.:
Date:
Modification:
Pages
1, 2, 3, 4
Correction in 'Maximum Ratings' and 'Characteristic Values' headline text
70-W612M3A300SC-M208P-D7-14
28 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
28 Sep. 2021 / Revision 7
copyright Vincotech
28
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