30-PT073AA100SM02-LN55L88Y

datasheet

flow3xANPFC 2

650 V / 100 A

Features

flow 2 12 mm housing

● 3x Advanced Neutral Boost PFC

● SiC Boost Diodes

● High speed IGBT

● High power low inductive package

● Temperature sensor

Schematic

Target applications

● Power Supply

Types

● 30-PT073AA100SM02-LN55L88Y

Copyright Vincotech

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18 Feb. 2021 / Revision 1

30-PT073AA100SM02-LN55L88Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Negative Neutral Point Switch

V_CES

Collector-emitter voltage

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

650

92

V

A

I_C

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

400

155

±30

175

A

P_tot

W

V

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Positive Neutral Point Switch

V_CES

Collector-emitter voltage

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

650

92

V

A

I_C

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

400

155

±30

175

A

P_tot

W

V

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Negative Boost Diode

V_RRM

Peak repetitive reverse voltage

650

54

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

160

103

175

A

Single Half Sine Wave,

t_p= 8,3 ms

T_j= 25 °C

T_s= 80 °C

A

T_j= T_jmax

W

°C

T_jmax

Maximum junction temperature

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30-PT073AA100SM02-LN55L88Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode

V_RRM

Peak repetitive reverse voltage

650

54

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

P_tot

t_plimited by T_jmax

160

103

175

A

Single Half Sine Wave,

t_p= 8,3 ms

T_j= 25 °C

T_s= 80 °C

A

T_j= T_jmax

W

°C

T_jmax

Maximum junction temperature

Negative Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

99

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

600

1800

120

150

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

Positive Neutral Point Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

128

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

890

A

Single Half Sine Wave,

t_p= 10 ms

3960

152

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

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30-PT073AA100SM02-LN55L88Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

650

25

V

A

I_F

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

40

A

P_tot

43

W

°C

T_jmax

Maximum junction temperature

175

Positive Boost Blocking Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

99

V

A

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

600

1800

120

150

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

Capacitor (DC)

V_MAX

Maximum DC voltage

630

V

T_op

Operation Temperature

-55 ... 125

°C

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

AC Voltage

t_p= 2 s

4000

2500

V

t_p= 1 min

V

>12,7

≥ 200

mm

Comparative Tracking Index

*100 % tested in production

CTI

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Negative Neutral Point Switch

Static

V_GE(th)

Gate-emitter threshold voltage

5

0,066

100

25

5

6

7

V

25

1,5

1,66

1,7

1,9⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

0,02

0,4

mA

µA

Ω

30

None

8400

208

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

30

25

Reverse transfer capacitance

Gate charge

158

15

400

100

282

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,61

K/W

25

35,2

33,28

32,64

13,12

14,4

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

14,4

R_gon= 4 Ω

R_goff= 4 Ω

166,72

187,2

193,28

25,95

35,94

39,66

0,366

0,46

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

0/15

400

90

t_f

125

150

25

ns

Q_rFWD=0,062 µC

Q_rFWD=0,066 µC

Q_rFWD=0,062 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

0,482

1,59

E_off

125

150

2,12

2,25

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Positive Neutral Point Switch

Static

V_GE(th)

Gate-emitter threshold voltage

5

0,066

100

25

5

6

7

V

25

1,5

1,66

1,7

1,9⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

650

0

25

0,02

0,4

mA

µA

Ω

30

None

8400

208

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

30

25

Reverse transfer capacitance

Gate charge

158

15

400

100

282

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,61

K/W

25

34,2

32,6

31,7

16

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

17

17,3

129

146

155

32,6

50

R_gon= 4 Ω

R_goff= 4 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

0/15

400

90

t_f

125

150

25

ns

54,3

0,356

0,4

Q_rFWD=0,075 µC

Q_rFWD=0,072 µC

Q_rFWD=0,074 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

0,407

1,88

2,56

2,75

E_off

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Negative Boost Diode

Static

25

1,38

1,52

1,57

8

1,55⁽¹⁾

800

V_F

I_R

Forward voltage

40

125

150

25

V

Reverse leakage current

V_r= 650 V

µA

150

120

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,92

K/W

Dynamic

25

26,7

25,94

25,37

8,99

I_RRM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

9,13

ns

9,06

0,062

0,066

0,062

0,033

0,031

6963

6573

6500

di/dt=7262 A/µs

di/dt=6770 A/µs

di/dt=6617 A/µs

Q_r

Recovered charge

0/15

400

90

125

150

25

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

(di_rf/dt)_max

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Positive Boost Diode

Static

25

1,38

1,52

1,57

8

1,55⁽¹⁾

800

V_F

I_R

Forward voltage

40

125

150

25

V

Reverse leakage current

V_r= 650 V

µA

150

120

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,92

K/W

Dynamic

25

23,16

22,04

22,22

9,69

I_RRM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

10,1

ns

10,2

0,075

0,072

0,074

0,033

0,031

0,032

6230

5620

5520

di/dt=5670 A/µs

di/dt=5300 A/µs

di/dt=5290 A/µs

Q_r

Recovered charge

0/15

400

90

125

150

25

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

(di_rf/dt)_max

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Negative Neutral Point Diode

Static

25

1,07

1

1,5⁽¹⁾

V_F

I_R

Forward voltage

50

125

150

25

V

0,983

100

2

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,58

K/W

Positive Neutral Point Diode

Static

25

1,04

0,973

0,956

1,5⁽¹⁾

V_F

I_R

Forward voltage

60

125

150

25

V

100

2

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,46

K/W

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Positive Boost Diode Protection Diode

Static

25

1,23

1,74

1,66

1,61

1,87⁽¹⁾

0,24

V_F

I_R

Forward voltage

20

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,21

K/W

Positive Boost Blocking Diode

Static

25

1,07

1

1,5⁽¹⁾

V_F

I_R

Forward voltage

50

125

150

25

V

0,983

100

2

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,58

K/W

Capacitor (DC)

Static

DC bias voltage =

0 V

C

Capacitance

25

100

nF

%

Tolerance

-10

10

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

22

kΩ

%

R₁₀₀= 1484 Ω

100

-5

5

mW

mW/K

K

d

25

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech Thermistor Reference

I

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

Copyright Vincotech

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datasheet

Negative Neutral Point Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

300

V_GE

:

7 V

8 V

250

200

150

100

50

250

200

150

100

50

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0

0,0

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

0,5

1,0

1,5

2,0

2,5

3,0

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

=

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

100

10

-1

75

50

25

0

10

-2

10

0,5

0,2

0,1

-3

10

0,05

0,02

0,01

0,005

0

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0

2

4

6

8

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,614

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

5,95E-02

9,24E-02

1,75E-01

2,27E-01

5,96E-02

4,07E+00

6,84E-01

1,03E-01

2,65E-02

2,79E-03

Copyright Vincotech

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datasheet

Negative Neutral Point Switch Characteristics

figure 5.

IGBT

Safe operating area

I_C= f(V_CE

)

1000

100

10

1

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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Positive Neutral Point Switch Characteristics

figure 6.

IGBT

figure 7.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

300

V_GE

:

7 V

8 V

250

200

150

100

50

250

200

150

100

50

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0

0,0

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

0,5

1,0

1,5

2,0

2,5

3,0

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

=

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 8.

IGBT

figure 9.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

100

10

-1

75

50

25

0

10

-2

10

0,5

0,2

0,1

-3

10

0,05

0,02

0,01

0,005

0

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0

2

4

6

8

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,614

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

5,95E-02

9,24E-02

1,75E-01

2,27E-01

5,96E-02

4,07E+00

6,84E-01

1,03E-01

2,65E-02

2,79E-03

Copyright Vincotech

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Positive Neutral Point Switch Characteristics

figure 10.

IGBT

Safe operating area

I_C= f(V_CE

)

1000

100

10

1

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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Negative Boost Diode Characteristics

figure 11.

FWD

figure 12.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

100

75

50

25

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,922

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

5,50E-02

1,08E-01

4,65E-01

1,72E-01

1,21E-01

3,13E+00

2,90E-01

4,41E-02

9,20E-03

1,23E-03

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datasheet

Positive Boost Diode Characteristics

figure 13.

FWD

figure 14.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

100

75

50

25

0

10

-1

10

-2

10

0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

0,922

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

5,50E-02

1,08E-01

4,65E-01

1,72E-01

1,21E-01

3,13E+00

2,90E-01

4,41E-02

9,20E-03

1,23E-03

Copyright Vincotech

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datasheet

Negative Neutral Point Diode Characteristics

figure 15.

Rectifier

figure 16.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

150

125

100

75

10

-1

10

-2

10

50

0,5

0,2

-3

10

0,1

0,05

0,02

0,01

0,005

0

25

-4

0

0,00

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

V_F(V)

10

t_p(s)

t_p

=

250

D =

t_p/ T

0,584

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

2,94E-02

7,44E-02

1,37E-01

2,92E-01

5,17E-02

5,74E+00

1,14E+00

1,81E-01

4,42E-02

4,02E-03

Copyright Vincotech

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datasheet

Positive Neutral Point Diode Characteristics

figure 17.

Rectifier

figure 18.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

175

150

125

100

75

10

-1

10

-2

10

0,5

50

0,2

-3

10

0,1

0,05

0,02

0,01

0,005

0

25

-4

0

0,00

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,25

0,50

0,75

1,00

1,25

1,50

10

V_F(V)

t_p(s)

t_p

=

250

μs

D =

t_p/ T

0,461

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

2,68E-02

5,67E-02

1,37E-01

2,04E-01

3,57E-02

6,12E+00

1,17E+00

1,54E-01

3,99E-02

2,89E-03

Copyright Vincotech

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18 Feb. 2021 / Revision 1

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datasheet

Positive Boost Diode Protection Diode Characteristics

figure 19.

FWD

figure 20.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

60

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,209

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

8,86E-02

2,06E-01

1,06E+00

4,76E-01

1,85E-01

1,98E-01

2,28E+00

2,30E-01

3,33E-02

1,15E-02

2,22E-03

3,49E-04

Copyright Vincotech

20

18 Feb. 2021 / Revision 1

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datasheet

Positive Boost Blocking Diode Characteristics

figure 21.

Rectifier

figure 22.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

0

150

125

100

75

10

-1

10

-2

10

50

0,5

0,2

-3

10

0,1

0,05

0,02

0,01

0,005

0

25

-4

0

0,00

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

V_F(V)

10

t_p(s)

t_p

=

250

D =

t_p/ T

0,584

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

2,94E-02

7,44E-02

1,37E-01

2,92E-01

5,17E-02

5,74E+00

1,14E+00

1,81E-01

4,42E-02

4,02E-03

Copyright Vincotech

21

18 Feb. 2021 / Revision 1

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datasheet

Thermistor Characteristics

figure 23.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

25000

20000

15000

10000

5000

0

20

40

60

80

100

120

140

T(°C)

Copyright Vincotech

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datasheet

Negative Neutral Point Switching Characteristics

figure 24.

IGBT

figure 25.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

5

4

3

2

1

0

4,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_off

E_on

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

400

0/15

4

V

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

Ω

4

figure 26.

FWD

figure 27.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,040

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

0,125

0,100

0,075

0,050

0,025

0,000

E_rec

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

23

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datasheet

Negative Neutral Point Switching Characteristics

figure 28.

IGBT

figure 29.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(off)

-1

10

-1

10

t_d(on)

t_r

t_f

t_r

-2

10

-2

10

-3

10

-3

10

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

400

0/15

4

°C

150

400

0/15

90

°C

V_CE

=

V_CE

=

V

Ω

V

A

V_GE

R_gon

R_goff

V_GE

I_C

4

figure 30.

FWD

figure 31.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

t_rr

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

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datasheet

Negative Neutral Point Switching Characteristics

figure 32.

FWD

figure 33.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

0,150

0,125

0,100

0,075

0,050

0,025

0,000

0,08

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

Q_r

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

figure 34.

FWD

figure 35.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

30

25

20

15

10

5

50

40

30

20

10

0

I_RM

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

Ω

Copyright Vincotech

25

18 Feb. 2021 / Revision 1

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datasheet

Negative Neutral Point Switching Characteristics

figure 36.

FWD

figure 37.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

9000

15000

12500

10000

7500

5000

2500

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

8000

di_rr/dt ──────

7000

6000

5000

4000

3000

2000

1000

0

25

50

75

100

125

150

175

I_C(A)

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

A

125 °C

150 °C

T_j:

figure 38.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

225

I_{C MAX}

200

175

150

125

100

75

50

25

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

4

°C

Ω

R_gon

R_goff

=

4

Ω

Copyright Vincotech

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18 Feb. 2021 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 39.

IGBT

figure 40.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

7

6

5

4

3

2

1

0

4,5

4,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_off

E_on

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

400

0/15

4

V

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

Ω

4

figure 41.

FWD

figure 42.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,040

0,035

0,030

0,025

0,020

0,015

0,010

0,005

0,000

0,10

0,08

0,06

0,04

0,02

0,00

E_rec

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

27

18 Feb. 2021 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 43.

IGBT

figure 44.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(off)

-1

10

-1

10

t_d(on)

t_f

t_d(on)

t_f

t_r

-2

10

-2

10

-3

10

-3

10

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

400

0/15

4

°C

150

400

0/15

90

°C

V_CE

=

V_CE

=

V

Ω

V

A

V_GE

R_gon

R_goff

V_GE

I_C

4

figure 45.

FWD

figure 46.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

0,0150

0,0125

0,0100

0,0075

0,0050

0,0025

0,0000

t_rr

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

28

18 Feb. 2021 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 47.

FWD

figure 48.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

0,150

0,125

0,100

0,075

0,050

0,025

0,000

0,12

0,10

0,08

0,06

0,04

0,02

0,00

Q_r

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

figure 49.

FWD

figure 50.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

30

25

20

15

10

5

45

40

35

30

25

20

15

10

5

I_RM

0

0,0

0

25

50

75

100

125

150

175

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

125 °C

150 °C

400

0/15

90

V

125 °C

150 °C

T_j:

V

A

Ω

Copyright Vincotech

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18 Feb. 2021 / Revision 1

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datasheet

Positive Neutral Point Switching Characteristics

figure 51.

FWD

figure 52.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

8000

12500

10000

7500

5000

2500

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

7000

6000

5000

4000

3000

2000

1000

0

di_rr/dt ──────

0

25

50

75

100

125

150

175

0,0

2,5

5,0

7,5

10,0

12,5

15,0

17,5

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

0/15

4

V

Ω

125 °C

150 °C

400

0/15

90

V

A

125 °C

150 °C

T_j:

figure 53.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

225

I_{C MAX}

200

175

150

125

100

75

50

25

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

4

°C

Ω

R_gon

R_goff

=

4

Ω

Copyright Vincotech

30

18 Feb. 2021 / Revision 1

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datasheet

Switching Definitions

figure 54.

IGBT

figure 55.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 56.

IGBT

figure 57.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

%

I_{C 90%}

I_C

I_{C 60%}

V_CE

I_{C 40%}

I_{C 90%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

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18 Feb. 2021 / Revision 1

30-PT073AA100SM02-LN55L88Y

datasheet

Switching Definitions

figure 58.

FWD

figure 59.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

%

t_Qr

t_rr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

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30-PT073AA100SM02-LN55L88Y

datasheet

Ordering Code

Marking

Version

Ordering Code

Without thermal paste

With thermal paste

30-PT073AA100SM02-LN55L88Y

30-PT073AA100SM02-LN55L88Y-/3/

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Pin table [mm]

1

X

Y

Function

TM61

Ph3

67,8

65,4

57,9

55,2

42,4

35,2

32,5

25

0

2

0

3

0

4

0

Ph3

5

0

Therm1

Therm2

Ph2

6

3

7

0

8

0

Ph2

9

0

TM51

TM41

Ph1

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

22,6

17,1

14,7

7,2

0

4,5

0

Ph1

0

13,75

16,45

36,5

33,5

36,5

33,5

36,5

33,5

16,45

13,75

11,15

13,75

16,45

13,75

11,15

13,75

16,45

13,75

11,15

DC-1

G14

0

5,7

8,7

G13

7,2

S1

31

G23

34,01

32,5

56,4

59,4

57,9

67,8

60,6

57,9

50,7

39,7

32,5

29,8

22,6

17,1

9,9

G24

S2

G34

G33

S3

DC+3

GND3

DC-3

DC-2

GND2

DC+2

DC+1

GND1

7,2

Copyright Vincotech

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18 Feb. 2021 / Revision 1

30-PT073AA100SM02-LN55L88Y

datasheet

Pinout

DC+1

38,39

DC+2

36,37

DC+3

26,27

D24

D14

D34

D52

C22

D42

C12

D62

C32

TM51

9,10

TM41

11,12

TM61

1,2

D51

D41

D61

D54

D53

T23

D44

D43

T13

D64

D63

T33

GND2

34,35

GND1

40,41

GND3

28,29

T14

T24

T34

G14

17

G24

21

G34

23

G23

G33

G13

18

20

24

C21

C11

C31

S2

22

S3

25

S1

19

D23

D13

D33

Rt

Ph1

13,14

DC-1

15,16

Ph2

7,8

DC-2

32,33

Ph3

3,4

DC-3

30,31

Therm2

6

Therm1

5

Identification

Component

Voltage

Current

Function

Comment

ID

T13, T23, T33

T14, T24, T34

D13, D23, D33

D14, D24, D34

D43, D53, D63

D44, D54, D64

IGBT

650 V

1600 V

100 A

40 A

50 A

60 A

Negative Neutral Point Switch

Positive Neutral Point Switch

Negative Boost Diode

FWD

Positive Boost Diode

Rectifier

Negative Neutral Point Diode

Positive Neutral Point Diode

Positive Boost Diode Protection

Diode

D42, D52, D62

D41, D51, D61

FWD

650 V

1600 V

630 V

20 A

50 A

Rectifier

Positive Boost Blocking Diode

C11, C12, C21, C22,

Capacitor

Thermistor

Capacitor (DC)

Thermistor

C31, C32

Rt

Copyright Vincotech

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30-PT073AA100SM02-LN55L88Y

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 36

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow 2 packages see vincotech.com website.

Package data

Package data for flow 2 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

30-PT073AA100SM02-LN55L88Y-D1-14

18 Feb. 2021

Initial Release

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

35

18 Feb. 2021 / Revision 1


型号：	30-PT073AA100SM02-LN55L88Y
厂家：	VINCOTECH
描述：	High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件：	总35页 (文件大小：9545K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

30-PT073AA100SM02-LN55L88Y [VINCOTECH]

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