30-PT10B2A200S706-PA79L98Y [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | 30-PT10B2A200S706-PA79L98Y |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总21页 (文件大小：5156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-PT10B2A200S706-PA79L98Y
datasheet
flowBOOST 2 dual
950 V / 200 A
Features
flow 2 12 mm housing
● Dual Booster
● High Performance Flying Capacitor Topology
● Optimized for 1500 V applications
● Latest Si Technology
● Integrated flying snubber capacitor
● Integrated NTC
● Low Inductance Design
Schematic
Target applications
● Energy Storage Systems
● Solar Inverters
Types
● 30-PT10B2A200S706-PA79L98Y
Copyright Vincotech
1
26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
950
139
400
261
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
950
110
400
198
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
52
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
96
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Flying Capacitor
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
-55 ... 125
°C
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (DC)
VMAX
Maximum DC voltage
1500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
>12,7
>12,7
≥ 600
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
15
0
460
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,36
K/W
25
259,85
258,71
258,39
25,63
28,06
29,12
182,5
208,82
216,26
21,26
42,49
47,76
10,16
11,99
12,42
4,1
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
170
tf
125
150
25
ns
QrFWD=4,18 µC
QrFWD=9,83 µC
QrFWD=11,69 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
6,62
7,38
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,48
K/W
25
103,93
145,58
159,43
125,49
183,62
197,84
4,18
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=6201 A/µs
di/dt=5610 A/µs
di/dt=5882 A/µs
Qr
Recovered charge
±15
600
170
125
150
25
9,83
μC
11,69
0,936
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,71
mWs
A/µs
3,37
6221,25
4201,78
4090,98
(dirf/dt)max
125
150
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,66
1,78
1,79
2,1(1)
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
40
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,99
K/W
Flying Capacitor
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
33
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
2,5
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,363
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,25E-02
8,12E-02
1,47E-01
2,64E-02
1,62E-02
2,69E+00
4,10E-01
4,37E-02
5,33E-03
3,22E-04
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,479
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,14E-02
7,77E-02
2,04E-01
1,19E-01
2,76E-02
3,38E+00
5,08E-01
6,60E-02
1,31E-02
1,47E-03
Copyright Vincotech
10
26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
50
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,991
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
9,66E-02
1,54E-01
5,19E-01
1,59E-01
6,34E-02
3,26E+00
3,87E-01
3,68E-02
5,49E-03
4,34E-04
Copyright Vincotech
11
26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Thermistor Characteristics
figure 10.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Switching Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
25
20
15
10
5
60
50
40
30
20
10
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
170
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 13.
FWD
figure 14.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
170
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Switching Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
tr
tf
-1
10
td(off)
-1
10
tr
tf
-2
10
-2
10
-3
10
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
150
600
±15
170
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
8
figure 17.
FWD
figure 18.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
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26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Boost Switching Characteristics
figure 19.
FWD
figure 20.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
5,0
Qr
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 21.
FWD
figure 22.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
175
150
125
100
75
350
300
250
200
150
100
50
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
125 °C
150 °C
600
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
15000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
50
100
150
200
250
300
350
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
170
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 25.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
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datasheet
Boost Switching Definitions
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
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26 Oct. 2021 / Revision 1
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datasheet
Boost Switching Definitions
figure 30.
FWD
figure 31.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
18
26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-PT10B2A200S706-PA79L98Y
30-PT10B2A200S706-PA79L98Y-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
Boost2
DC-
Boost2
DC-
66,4
63,7
61
2
3
0
0
Boost2
DC+Boost2
DC+Boost2
DC+Boost2
DC+Boost1
DC+Boost1
DC+Boost1
DC-
4
5
50
0
0
0
0
0
0
0
47,3
44,6
25,9
23,2
20,5
9,5
6
7
8
9
10
Boost1
DC-
Boost1
DC-
11
12
6,8
4,1
0
0
Boost1
S17
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
0
2,75
5,75
18,9
21,9
28,4
31,1
33,8
36,5
36,5
36,5
36,5
36,5
36,5
36,5
36,5
36,5
36,5
33,8
31,1
28,4
21,9
18,9
5,75
2,75
21,6
21,6
15,6
8,8
0
G17
0
S15
0
G15
0
Boost1
Boost1
Boost1
Boost1
C12
0
0
0
15
17,7
24,2
26,9
43,6
46,3
52,8
55,5
70,5
70,5
70,5
70,5
70,5
70,5
70,5
70,5
18,3
24,8
32,5
32,5
45,7
52,2
C12
C11
C11
C21
C21
C22
C22
Boost2
Boost2
Boost2
Boost2
G25
S25
G27
S27
C12
C11
Therm1
Therm2
C21
21,6
21,6
C22
Copyright Vincotech
19
26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Pinout
DC+Boost2
4-6
DC+Boost1
7-9
D17
D27
C11
23,24,38
C21
25,26,41
D25
D15
C25
C15
C27
C17
Boost1
17-20
Boost2
29-32
T25
T15
D55
D45
G15
16
G25
33
S15
15
S25
34
C12
21,22,37
C22
27,28,42
T27
T17
D57
D47
G17
G27
14
35
S27
36
S17
13
Rt
DC-Boost2
1-3
DC-Boost1
10-12
Therm1
39
Therm2
40
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T17, T25, T27
D15, D17, D25, D27
D45, D47, D55 , D57
C15, C25
IGBT
FWD
950 V
950 V
200 A
200 A
50 A
Boost Switch
Boost Diode
FWD
1200 V
1000 V
1500 V
Boost Sw. Protection Diode
Flying Capacitor
Capacitor (DC)
Capacitor
Capacitor
Thermistor
C17, C27
Rt
Thermistor
Copyright Vincotech
20
26 Oct. 2021 / Revision 1
30-PT10B2A200S706-PA79L98Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-PT10B2A200S706-PA79L98Y-D1-14
26 Oct. 2021
Initial Release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
21
26 Oct. 2021 / Revision 1
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