30-F2127PA100SC-L179E09 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 30-F2127PA100SC-L179E09 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总29页 (文件大小：8832K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-F2127PA100SC-L179E09
datasheet
flow7PACK 2
1200 V / 100 A
Features
flow 2 17 mm housing
● Compact Flow 2 housing
● Trench Fieldstop IGBT4 Technology
● Compact and Low Inductance Design
● Built-in NTC
Schematic
Target applications
● Motor Drive
● Power Generation
Types
● 30-F2127PA100SC-L179E09
Copyright Vincotech
1
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
118
300
307
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
96
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
176
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
Collector-emitter voltage
1200
66
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
185
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
38
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
50
A
Ptot
87
W
°C
Tjmax
Maximum junction temperature
175
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
24
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
59
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0034
100
25
5,3
5,8
6,3
V
V
25
1,58
1,88
2,19
2,27
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
240
2
Cies
Cres
Qg
5600
200
760
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,31
K/W
25
103,8
107,8
17,6
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
23
Rgon = 4 Ω
Rgoff = 4 Ω
218,6
293,2
71,68
110,56
4,04
td(off)
Turn-off delay time
Fall time
ns
150
25
±15
600
100
tf
ns
150
25
QrFWD=9,32 µC
QrFWD=18,66 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
6,73
5,25
150
8,77
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,35
1,83
1,87
2,05(1)
18
VF
IR
Forward voltage
100
V
150
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,54
K/W
25
163,67
186,62
130,08
294,35
9,32
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
150
25
trr
ns
150
25
di/dt=6900 A/µs
di/dt=5512 A/µs
Qr
±15
600
100
μC
150
25
18,66
3,87
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
7,96
8743
(dirf/dt)max
150
3702
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0017
50
25
5,3
5,8
6,3
V
25
1,58
1,85
2,28
2,07(1)
15
0
V
150
1200
0
25
25
1
µA
nA
Ω
20
120
4
Cies
Cres
Qg
2800
100
380
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,51
K/W
25
116,8
121,2
121,4
18
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
23,2
24,4
Rgon = 8 Ω
Rgoff = 8 Ω
244,8
301
td(off)
Turn-off delay time
Fall time
125
150
25
ns
315,8
87,45
109,52
124,52
2,39
±15
600
50
tf
125
150
25
ns
QrFWD=3,21 µC
QrFWD=5,83 µC
QrFWD=6,53 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,19
mWs
mWs
3,43
2,96
Eoff
125
150
4,36
4,8
Copyright Vincotech
6
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,35
1,9
1,9
2,05(1)
VF
IR
Forward voltage
25
125
150
V
1,88
Reverse leakage current
Thermal
Vr = 1200 V
25
5,2
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,09
K/W
25
54,29
52,86
54,28
158,7
311,99
336,58
3,21
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3279 A/µs
di/dt=2629 A/µs
di/dt=2485 A/µs
Qr
Recovered charge
±15
600
50
125
150
25
5,83
μC
6,53
1,23
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,47
mWs
A/µs
2,78
4114
1240
1190
(dirf/dt)max
125
150
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Brake Sw. Protection Diode
Static
25
1,35
1,77
1,69
2,05(1)
2,7
VF
IR
Forward voltage
10
V
150
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,62
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
2,5
5,0
7,5
10,0
12,5
2,5
5,0
7,5
10,0
12,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,309
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,00E-02
7,30E-02
1,19E-01
4,31E-02
1,45E-02
1,67E+00
2,35E-01
5,35E-02
1,45E-02
1,21E-03
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,539
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
3,25E-02
5,01E-02
1,38E-01
2,22E-01
5,69E-02
3,92E-02
4,14E+00
9,90E-01
1,45E-01
3,37E-02
9,51E-03
7,97E-04
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,512
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,12E-02
1,15E-01
2,22E-01
6,59E-02
3,86E-02
1,13E+00
1,65E-01
3,78E-02
1,21E-02
9,52E-04
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,091
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,34E-02
9,71E-02
4,43E-01
3,93E-01
1,05E-01
2,93E+00
3,59E-01
4,79E-02
1,21E-02
2,46E-03
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Sw. Protection Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,623
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,84E-02
1,62E-01
6,14E-01
5,11E-01
2,69E-01
2,41E+00
1,88E-01
3,05E-02
7,89E-03
1,18E-03
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eon
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
150 °C
600
±15
100
V
150 °C
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
12
10
8
10
Erec
8
Erec
6
6
Erec
4
4
Erec
2
2
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
-1
10
tf
tr
-1
10
tr
-2
10
-3
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
4
°C
V
150
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
30
25
20
15
10
5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
250
200
150
100
50
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
150 °C
600
±15
100
V
150 °C
V
A
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
150 °C
600
±15
100
V
V
A
150 °C
V
Ω
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
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07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
10
7
6
5
4
3
2
1
0
Eon
Eon
Eoff
8
Eon
Eoff
Eoff
Eon
Eon
Eoff
6
Eoff
Eon
Eoff
4
2
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
td(on)
tf
-1
10
tf
tr
-1
10
tr
-2
10
-3
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
6
Qr
Qr
4
2
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
70
60
50
40
30
20
10
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
24
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-F2127PA100SC-L179E09
30-F2127PA100SC-L179E09-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
6
Function
BRCE
BRCE
BRCG
BRCS
INV+
INV+
INV+
SI6
70,9
70,9
70,9
67,9
56,8
56,8
54,1
46
2
3
3
0
4
0
5
3
6
0
7
0
8
0
9
43
0
GI6
EI6
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
40
3
40
0
EI6
34,9
34,9
31,9
28,9
18,8
18,8
16,1
16,1
6
3
EI5
0
EI5
0
GI5
SI5
0
3
INV+
INV+
INV+
INV+
SI4
0
3
0
0
3
0
GI4
EI4
0
3
0
0
EI4
0
34,1
36,9
36,9
36,9
36,9
36,9
36,9
36,9
34,1
36,9
34,1
36,9
36,9
36,9
36,9
37,05
37,05
21,5
18,5
U
0
U
3
U
6
SI1
9
GI1
GI2
SI2
20
23
26
V
29
V
29
V
40
W
40
W
43
W
46
SI3
49
GI3
NTC1
NTC2
BRC+
BRC+
64,65
71,05
70,2
70,2
Copyright Vincotech
27
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Pinout
INV+
16-19
INV+
5-7
TI1
TI2
TI3
DI1
DI2
DI3
DB2
GI1
28
GI2
29
GI3
38
SI1
27
SI2
30
SI3
37
BRC+
41,42
U
V
24-26
31-33
W 34-36
TI4
TI5
TI6
TB
DI4
DI5
DI6
DB1
GI4
21
GI5
14
GI6
9
BRCG
3
NTC
SI4
20
SI5
15
SI6
8
BRCS
4
BRCE
1,2
NTC2
40
EI4
EI5
EI5
NTC1
39
22,23
12,13
10,11
Identification
Component
Voltage
Current
Function
Comment
ID
TB
IGBT
FWD
FWD
1200 V
1200 V
1200 V
50 A
25 A
10 A
Brake Switch
Brake Diode
DB2
DB1
Brake Sw. Protection Diode
TI4, TI1, TI5, TI2, TI6,
IGBT
1200 V
1200 V
100 A
100 A
Inverter Switch
TI3
DI1, DI4, DI2, DI5,
DI3, DI6
FWD
Inverter Diode
Thermistor
NTC
Thermistor
Copyright Vincotech
28
07 Sep. 2021 / Revision 6
30-F2127PA100SC-L179E09
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Thermistor change
New datasheet format
30-F2127PA100SC-L179E09-D6-14
7 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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07 Sep. 2021 / Revision 6
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