30-F2166BA150RW-L267G09 [VINCOTECH]
High inrush current capability;![30-F2166BA150RW-L267G09](http://pdffile.icpdf.com/pdf2/p00361/img/icpdf/30-F2166BA15_2213466_icpdf.jpg)
型号: | 30-F2166BA150RW-L267G09 |
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描述: | High inrush current capability |
文件: | 总21页 (文件大小:7199K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-F2166BA150RW-L267G09
datasheet
flowCON 2
1600 V / 150 A
Features
flow 2 17 mm housing
● High Efficiency input rectifier
● Brake
● Complementary to flowPACK2
Schematic
Target applications
● Charging Stations
● Industrial Drives
● UPS
● Welding & Cutting
Types
● 30-F2166BA150RW-L267G09
Copyright Vincotech
1
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Switch
VCES
Collector-emitter voltage
1200
114
300
291
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
49
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
94
A
Ptot
W
°C
Tjmax
Maximum junction temperature
150
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
17
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
15
A
Ptot
38
W
°C
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
180
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
1650
13600
218
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
4000
>12,7
>12,7
≥ 200
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0038
100
25
5,1
5,8
6,4
V
V
25
1,53
1,94
2,23
2,31
1,97(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6300
270
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
800
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,33
K/W
25
53,6
55,2
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
34,8
tr
125
25
37,6
Rgon = 4 Ω
Rgoff = 4 Ω
533,2
633,8
52,87
106,72
7,14
td(off)
Turn-off delay time
Fall time
ns
125
25
0/15
600
100
tf
ns
125
25
QrFWD=8,75 µC
QrFWD=15,44 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
9,51
6,33
125
10,17
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
1,23
1,85
1,89
1,95(1)
27
VF
IR
Forward voltage
50
V
125
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,75
K/W
25
71,6
87,32
273,71
446,34
8,75
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=3488 A/µs
di/dt=2550 A/µs
Qr
0/15
600
100
μC
125
25
15,44
3,56
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
6,59
516,65
748,94
(dirf/dt)max
125
Brake Sw. Protection Diode
Static
25
1,23
1,66
1,62
1,97(1)
27
VF
IR
Forward voltage
7,5
V
125
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,83
K/W
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Rectifier Diode
Static
25
1,12
1,04
1,21(1)
1,1(1)
VF
IR
Forward voltage
106
V
125
Reverse leakage current
Vr = 1600 V
25
100
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,32
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
250
VGE
:
7 V
8 V
250
200
150
100
50
9 V
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,326
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,80E-02
9,16E-02
1,25E-01
2,35E-02
1,82E-02
1,50E+00
1,41E-01
3,64E-02
1,13E-02
8,50E-04
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,746
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
3,50E-02
7,36E-02
1,83E-01
3,18E-01
8,17E-02
5,49E-02
5,35E+00
8,54E-01
1,14E-01
2,85E-02
7,22E-03
8,83E-04
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,833
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
4,59E-02
1,15E-01
5,63E-01
6,02E-01
2,37E-01
2,71E-01
4,62E+00
3,62E-01
3,63E-02
8,92E-03
1,88E-03
3,97E-04
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Rectifier Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
500
400
300
200
100
0
10
-1
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00 0,25 0,50 0,75 1,00 1,25 1,50 1,75 2,00 2,25
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,321
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
2,12E-02
9,26E-02
1,22E-01
7,77E-02
7,59E-03
1,24E+01
1,14E+00
1,41E-01
2,51E-02
1,97E-03
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
175
200
IC(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
Ω
125 °C
600
0/15
100
V
125 °C
V
A
Rgon
Rgoff
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
10
7
6
5
4
3
2
1
0
Erec
Erec
8
6
Erec
Erec
4
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
600
0/15
100
V
125 °C
V
A
Copyright Vincotech
13
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(off)
0
10
-1
10
tf
td(on)
tr
-1
td(on)
10
10
tf
tr
-2
10
-2
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
0/15
4
°C
V
125
600
0/15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
600
0/15
100
V
125 °C
V
A
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
30
25
20
15
10
5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
600
0/15
100
V
125 °C
V
A
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
125
100
75
50
25
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
600
0/15
100
V
125 °C
V
A
Copyright Vincotech
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28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
4500
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
0/15
4
V
V
Ω
125 °C
600
0/15
100
V
V
A
125 °C
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
16
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
17
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Brake Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
18
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-F2166BA150RW-L267G09
30-F2166BA150RW-L267G09-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Function 26
BG 27
Pin
1
X
70
67
49,8
47
47
47
2,8
2,8
2,8
5,6
0
Y
0
9
20,1
17,3
20,1
17,3
20,1
17,3
20,1
17,3
20,1
17,4
20,2
17,4
20,2
17,4
20,2
R
R
R
S
S
S
S
S
S
T
T
T
T
T
T
11,8
11,8
20,8
20,8
23,6
23,6
26,4
26,4
35,4
35,4
38,2
38,2
41
2
0
BS
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
3
0
NEG BUS
NEG BUS
NEG BUS
NEG BUS
NEG OUT
NEG OUT
NEG OUT
NEG OUT
NEG OUT
NEG OUT
NEG OUT
NEG OUT
POS OUT
POS OUT
POS OUT
POS OUT
POS OUT
POS OUT
POS OUT
POS OUT
R
4
0
5
2,8
5,6
0
6
7
8
2,8
5,6
0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
0
0
2,8
5,6
8,4
27,6
30,4
33,2
36
0
0
41
0
47
30,4
33,2
POS BUS
POS BUS
POS BUS
BR
0
47
0
47
36
0
61,6
64,4
67,2
70
22,85
22,85
22,85
22,85
36,55
36,55
2,8
2,8
2,8
2,8
6,2
6,2
27,6
30,4
33,2
36
BR
BR
BR
64,2
70,6
NTC1
NTC2
16,45
19,25
R
25
9
17,3
R
Copyright Vincotech
19
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Pinout
POS OUT
POS BUS
41,42,43
15,16,17,18,19,20,21,22
D1
D3
D5
D7
BR
R
44,45,46,47
23,24,25,26,27,28
S
T1
D8
29,30,31,32,33,34
BG
1
T
BS
2
35,36,37,38,39,40
D2
D4
D6
Rt
NEG OUT
NEG BUS
3,4,5,6
NTC1
48
NTC2
49
7,8,9,10,11,12,13,14
Identification
Component
Voltage
Current
Function
Comment
ID
T1
IGBT
FWD
FWD
1200 V
1200 V
1200 V
100 A
50 A
Brake Switch
Brake Diode
D7
D8
7,5 A
Brake Sw. Protection Diode
D2, D1, D4, D3, D6,
Rectifier
1600 V
170 A
Rectifier Diode
Thermistor
D5
Rt
Thermistor
Copyright Vincotech
20
28 Sep. 2021 / Revision 5
30-F2166BA150RW-L267G09
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Correct Characteristic Values of Brake Sw. Protection Diode
30-F2166BA150RW-L267G09-D5-14
28 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
21
28 Sep. 2021 / Revision 5
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