30-F2126PA100M7-L289F79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 30-F2126PA100M7-L289F79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总16页 (文件大小：1960K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
flowPACK 2
1200 V / 100 A
Features
flow 2 17mm housing
● IGBT Mitsubishi gen 7 technology with low
V CEsat
and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Built-in NTC
Solder pin
Press-fit pin
Schematic
Target applications
● Industrial Drives
● Power Supply
● UPS
Types
● 30-P2126PA100M7-L289F79Y
● 30-F2126PA100M7-L289F79
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
109
200
232
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
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30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
89
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
165
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
-40…(Tjmax - 25)
Visol
DC Test Voltage
tp = 2 s
4000
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
CTI
Copyright Vincotech
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13 Feb. 2019 / Revision 2
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30-F2126PA100M7-L289F79
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,01
100
25
5,4
6
6,6
V
V
25
1,61
1,82
1,91
2,05
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
110
500
µA
nA
Ω
20
none
21000
700
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
280
15
600
100
650
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,41
K/W
Dynamic
25
118
118
118
10
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
12
13
174
200
206
83
Rgoff = 2 Ω
Rgon = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
100
tf
96
107
3,255
4,868
5,368
6,605
8,774
9,490
Qr
FWD
Qr
FWD
Qr
FWD
= 11,6 μC
= 17,3 μC
= 19,2 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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30-F2126PA100M7-L289F79
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
1,82
1,96
1,97
2,1
VF
Forward voltage
100
125
150
V
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,58
K/W
Dynamic
25
178
166
165
IRRM
125
150
25
Peak recovery current
A
149
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
312
339
ns
di/dt = 9387 A/μs
di/dt = 7872 A/μs ±15
di/dt = 8350 A/μs
11,601
17,270
19,181
5,138
7,753
8,588
4044
2649
2147
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
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30-F2126PA100M7-L289F79
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,41
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,27E-02
6,06E-02
1,38E-01
1,39E-01
1,46E-02
1,57E-02
4,21E+00
6,46E-01
1,09E-01
2,79E-02
2,35E-03
4,10E-04
Copyright Vincotech
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30-F2126PA100M7-L289F79
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,58
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,89E-02
7,07E-02
2,02E-01
1,90E-01
3,24E-02
3,35E-02
3,41E+00
4,06E-01
7,46E-02
2,27E-02
3,47E-03
4,78E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
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30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
2
V
V
Ω
:
600
±15
100
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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13 Feb. 2019 / Revision 2
30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
2
°C
V
150
600
±15
100
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
100
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
8
13 Feb. 2019 / Revision 2
30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
600
±15
100
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I I
I I
I
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
100
V
V
A
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
9
13 Feb. 2019 / Revision 2
30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
d
iF
/
d
t
diF/dt
dirr/dt
t
t
t
t
t
t
t
t
i
i
i
i
dirr
/dt
i
i
i
i
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
R gon
=
=
=
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
2
2
Ω
Copyright Vincotech
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30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Definitions
General conditions
=
=
=
125 °C
2 Ω
T j
Rgon
R goff
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
VCE
IC
IC
VGE
VCE
tEoff
VGE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
V
600
V
100
A
100
A
0,200
0,717
μs
μs
0,118
0,318
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
V
600
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
100
A
100
A
0,096
μs
0,012
μs
tr
=
Copyright Vincotech
11
13 Feb. 2019 / Revision 2
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30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
59,87
8,77
0,72
kW
mJ
μs
P on (100%) =
Eon (100%) =
59,87
4,87
0,32
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
600
V
100
A
-166
0,312
A
I RRM (100%) =
t rr
μs
=
Copyright Vincotech
12
13 Feb. 2019 / Revision 2
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30-F2126PA100M7-L289F79
datasheet
Halfbridge Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qr
Erec
IF
Prec
tErec
100
A
59,87
7,75
0,69
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
17,27
0,69
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
13
13 Feb. 2019 / Revision 2
30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
datasheet
Ordering Code & Marking
Version
with thermal paste 17mm housing with Press-fit pins
with thermal paste 17mm housing with Solder pins
without thermal paste 17mm housing with Press-fit pins
without thermal paste 17mm housing with Solder pins
Ordering Code
30-P2126PA100M7-L289F79Y-/3/
30-F2126PA100M7-L289F79-/3/
30-P2126PA100M7-L289F79Y
30-F2126PA100M7-L289F79
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
Outline
Pin table [mm]
Pin table [mm]
Pin
1
X
Y
0
Function
Pin
X
Y
Function
L289F79
0,9
S11
G11
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
68,5
68,5
64,7
61,7
58,7
56
0
DC+3
DC+3
G16
S16
PH3
PH3
PH3
PH3
G14
S14
PH2
PH2
PH2
PH2
G12
S12
PH1
PH1
PH1
PH1
2
0,9
3
2,7
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
3
3,9
0
DC-1
DC-1
DC-1
DC-1
DC+1
DC+1
DC+1
DC+1
S13
4
3,9
2,7
5,4
0
5
3,9
6
6,6
7
15,2
15,2
17,9
17,9
26,2
26,2
29,2
29,2
29,2
31,9
32,2
40,5
40,5
43,2
43,2
51,5
51,5
54,5
54,5
54,5
57,2
65,8
65,8
0
53,3
50,6
39,4
36,4
33,4
30,7
28
8
2,7
0
L289F79Y
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
2,7
0
3
G13
0
DC-2
DC-2
DC-2
DC-2
NTC
2,7
5,4
0
25,3
14,1
11,1
8,1
4,05
0
47
48
49
5,4
2,7
0
36
36
36
DC+2
DC+2
DC+2
2,7
0
2,7
0
DC+2
S15
3
G15
0
DC-3
DC-3
DC-3
DC-3
DC+3
DC+3
2,7
5,4
0
0
2,7
Copyright Vincotech
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30-F2126PA100M7-L289F79
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11,T12,T13
T14,T15,T16
IGBT
1200 V
100 A
100 A
Half-Bridge Switch
D11,D12,D13
D14,D15,D16
FWD
1200 V
Half-Bridge Diode
Thermistor
NTC
Thermistor
Copyright Vincotech
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30-F2126PA100M7-L289F79
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-x2126PA100M7-L289F79x-D2-14
13 Feb. 2019
Added solder pin version to ordering code
1,14
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
13 Feb. 2019 / Revision 2
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