20-1B06IPB010RC-P955A4 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 20-1B06IPB010RC-P955A4 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总31页 (文件大小：2547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
flow IPM 1B
600 V / 10 A
Features
flow IPM 1B
● CIP-topology (converter + inverter + PFC)
● Optimized for PFC frequencies of 20kHz..100kHz
and inverter frequencies of 4kHz..20kHz
● Integrated PFC controller circuit with programmable
DC output voltage and PWM frequency
● Inverter gate drive inclusive bootstrap for high side
power supply
Solder pins
● Over current and short circuit protection
● Integrated DC-capacitor
● Sense output of DC-current
● Temperature sensor
● Conclusive power flow, all power connections on
one side, no input output X-ing
Press-fit
● Optional pre-applied thermal interface material
Schematic
Target Applications
● Fans and Pumps
● AirCon
● Electrical Tools
● Low power industrial drive
Types
● 20-1B06IPB010RC-P955A40
● 20-PB06IPB010RC-P955A40Y
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
V
A
A
T s = 80 °C
T c = 80 °C
13
14
T j = T jmax
I FSM
Surge (non-repetitive) forward current
I 2t-value
130
80
t p = 10 ms
50 Hz half sine wave
T j = 150 °C
I 2t
A2s
W
T s = 80 °C
T c = 80 °C
15
23
P tot
T j = T jmax
Power dissipation
T jmax
Maximum Junction Temperature
150
°C
PFC IGBT
V CE
I C
Collector-emitter breakdown voltage
DC collector current
650
V
A
T s = 80 °C
T c = 80 °C
12
14
T j = T jmax
I CRM
t p limited by T jmax
V CE ≤ 650 V, T j ≤ T op max
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
90
90
A
A
T s = 80 °C
T c = 80 °C
19
29
P tot
V GE
W
V
Gate-emitter peak voltage
Maximum Junction Temperature
±20
175
T jmax
°C
copyright Vincotech
1
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
V RRM
I F
I FRM
P tot
650
V
A
T s = 80 °C
T c = 80 °C
5
7
T j = T jmax
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
12
A
T s = 80 °C
T c = 80 °C
10
15
W
°C
T jmax
Maximum Junction Temperature
175
PFC Diode
V RRM
I F
Peak Repetitive Reverse Voltage
DC forward current
650
V
A
T s = 80 °C
T c = 80 °C
10
14
T j = T jmax
I FSM
Surge forward current
180
130
60
A
t p = 8,3 ms
60 Hz half sine wave
I 2t-value
I 2t
I FRM
P tot
A
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
A
T s = 80 °C
T c = 80 °C
17
26
W
°C
T jmax
Maximum Junction Temperature
175
Inverter Transistor
Collector-emitter breakdown voltage
DC collector current
V CE
I C
600
V
A
T s = 80 °C
T c = 80 °C
8
T j = T jmax
10
I CRM
t p limited by T jmax
V CE ≤ 600 V, T j ≤ 150 °C
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
30
20
A
A
T s = 80 °C
T c = 80 °C
16
25
P tot
V GE
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
T j ≤ 150 °C
V GE = 15 V
5
µs
V
V CC
400
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
P tot
T jmax
Peak Repetitive Reverse Voltage
DC forward current
600
V
A
T s = 80 °C
T c = 80 °C
T s = 80 °C
T c = 80 °C
8
T j = T jmax
T j = T jmax
10
14
22
Power dissipation
W
°C
Maximum Junction Temperature
175
copyright Vincotech
2
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Shunt
I F
T c = 25 °C
T c = 25 °C
DC forward current
Power dissipation
10
10
A
P tot
W
PFC Controller*
VCC supply voltage
VSENSE voltage
V CC
V CC common with gate driver IC
26
26
V
V
V VSENSE
I VSENSE
V FREQ
T jmax
Vsense Current
800
5,3
125
µA
V
FREQ pin voltage
Maximum Junction Temperature
°C
* for more information see infineon's datasheet ICE3PCS02
DC - Shunt
I F
DC forward current
Power dissipation
8
A
P tot
3,2
W
DC link Capacitor
V MAX
T c = 25 °C
Maximum DC voltage
500
V
Gate Driver*
U CC
U IN
Supply voltage
20
10
V
V
V
Input voltage (LIN, HIN, EN)
Output voltage (FAULT)
U OUT
VCC+0,5
* for more information see infineon's datasheet 6ED003L02-F2
Thermal Properties
T stg
T op
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
V is
t = 2 s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
3
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Characteristic Values
Symbol
Conditions
Value
Typ
Parameter
Unit
V r [V]
V GE [V]
I C [A]
I F [A]
I D [A]
V CE [V]
V DS [V]
T j [°C]
Min
Max
V GS [V]
Input Rectifier Diode
25
125
25
125
25
125
1,04
0,97
0,87
0,74
25
V F
V to
r t
Forward voltage
7
7
7
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
33
I r
1600
25
0,01
phase-change
R th(j-s)
material
K/W
Thermal resistance junction to sink
4,56
λ = 3,4W/mK
PFC IGBT
V GE(th) V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Turn-on delay time
Rise time
0,0003
10
25
3,3
4
4,7
1,9
V
V
25
125
1,28
1,28
V CEsat
I CES
t d(on)
t r
15
0
650
400
25
0,04
mA
25
125
25
125
25
125
25
125
25
125
25
125
27
28
5
7
ns
122
154
2
t d(off)
t f
Turn-off delay time
Fall time
U CC = 15 V
10
2
0,1516
0,2417
0,0317
0,0583
E on
E off
C ies
C oss
C rss
Turn-on energy loss
Turn-off energy loss
Input capacitance
mWs
pF
2100
Output capacitance
Reverse transfer capacitance
f = 1 MHz
0
25
25
45
7,7
phase-change
R th(j-s) material
λ = 3,4W/mK
Thermal resistance junction to sink
4,96
K/W
PFC Inverse Diode
25
125
1,23
1,73
1,59
2,15
V F
Diode forward voltage
6
V
phase-change
material
R th(j-s)
Thermal resistance junction to sink
9,56
K/W
λ = 3,4W/mK
PFC Diode
25
1,64
1,63
2,26
5
V F
I rm
Forward voltage
10
10
V
µA
125
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
650
400
25
25
125
25
125
25
125
25
125
25
125
15
19
22
36
0,2008
0,4358
0,0150
0,0504
2033
891
I RRM
t rr
A
ns
Q rr
U CC = 15 V
µC
E rec
mWs
A/µs
( di rf/dt )max
phase-change
R th(j-s) material
λ = 3,4W/mK
Thermal resistance junction to sink
5,48
K/W
PFC Shunt
R1 value
R
40
mΩ
copyright Vincotech
4
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Characteristic Values
Symbol
Conditions
Value
Typ
Parameter
Unit
V r [V]
V GE [V]
I C [A]
I F [A]
I D [A]
V CE [V]
V DS [V]
T j [°C]
Min
Max
V GS [V]
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage*
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time **
Rise time
V GE(th) V CE = V GE
0,00017 25
4,4
1,7
5
5,6
V
V
25
10
2,20
2,32
2,95
V CEsat
I CES
I GES
R gint
t d(on)
t r
15
125
0
600
0
25
0,1
mA
nA
Ω
20
25
120
none
25
125
25
125
25
582
631
20
25
ns
837
t d(off)
t f
Turn-off delay time **
Fall time
U CC = 15 V
U IN = 5 V
125
25
950
400
6
16
125
25
125
25
125
22
0,1950
0,3241
0,1611
0,2042
E on
E off
C ies
C oss
C rss
Q G
Turn-on energy loss
mWs
pF
Turn-off energy loss
Input capacitance
655
Output capacitance
f = 1 MHz
0
25
25
25
37
Reverse transfer capacitance
Gate charge
22
15
480
10
64
nC
phase-change
R th(j-s) material
λ = 3,4W/mK
Thermal resistance junction to sink
5,79
K/W
* chip data
** including gate driver
Inverter Diode
25
125
25
125
25
125
25
125
25
125
25
125
1,5
2,23
2,18
6
2,85
V F
I RRM
Diode forward voltage
10
6
V
A
Peak reverse recovery current
Reverse recovery time
6
179
276
0,3566
0,6738
181
46
0,0867
0,1610
t rr
ns
U CC = 15 V
U IN = 5 V
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
400
µC
( di rf/dt )max
A/µs
mWs
E rec
phase-change
material
R th(j-s)
Thermal resistance junction to sink
6,66
K/W
λ = 3,4W/mK
DC - Shunt
R2 value
R
25
25
mΩ
nF
DC link Capacitor
C Value
C
100
copyright Vincotech
5
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Characteristic Values
Symbol
Conditions
Value
Typ
Parameter
Unit
V r [V]
V GE [V]
I C [A]
I F [A]
I D [A]
V CE [V]
V DS [V]
T j [°C]
Min
Max
V GS [V]
Gate Driver
U CC
I QCC
Supply voltage
13
15
17,5
2
V
U LIN = 0 V; U HIN=3,3 V
Quiescent Vcc supply current
Input voltage (LIN, HIN, EN)
Logic "0" input voltage (LIN, HIN)
Logic "1" input voltage (LIN, HIN)
Positive going threshold voltage (EN)
Negative going threshold voltage (EN)
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
Input bias current LIN high
1,3
mA
U IN
0
5
U I H
1,7
0,7
1,9
1,1
9
2,1
0,9
2,1
1,3
10,3
445
70
2,4
1,1
2,3
1,5
12
U IL
U CC = 15 V
V
U EN, TH+
U EN, TH-
U IN, CLAMP I IN = 4 mA
U TR, TH+
380
510
100
200
100
120
120
U CC
mV
μA
I LIN+
I LIN-
I HIN+
I HIN-
I EN+-
U FLT
U LIN = 3,3 V
U LIN = 0 V
25
Input bias current LIN low
110
70
U HIN = 3,3 V
U HIN = 0 V
U HIN = 3,3 V
Input bias current HIN high
Input bias current HIN low
110
45
Input bias current EN high
Output voltage (FAULT)
0
V
Ω
R ON, FLT U FAULT = 0,5 V
Low on resistor of pull down trans. (FAULT)
Pulse width for ON or OFF
45,0
100
t IN
1
μs
t ON
Turn-on propagation delay (LIN, HIN)
Turn-off propagation delay (LIN, HIN)
FAULT reset time
400
360
530
490
4
800
760
U LIN/HIN = 0 V or 3,3 V
ns
t OFF
t RST
t DT
ms
ns
U LIN/HIN = 0 V & 3,3 V
Fixed deadtime between high and low side
150
310
PFC Controller
V CC
V CCon
V CCUVLO
I CCHG
Supply voltage*
15
26
12,9
11,9
8,5
V
V
VCC turn-on threshold
11,5
10,5
12,0
11,0
6,4
VCC turn-off threshold
V
C L = 1 nF
Operating current with active GATE
Operating current during standby
PFC switching frequency
mA
mA
kHz
V
I CCstby
3,5
4,7
F SWnom Set with an internal resistor R FREQ = 220 kΩ**
20
pull Vsense higher than Vdis PFC to disable PFC
operation
V dis PFC
PFC disable threshold
14
25
DC2+ Set with an internal resistor divider***
DC link voltage
325
410
V
V OVP1L2H
DC link treshold (OVP1) low to high
DC link treshold (OVP1) high to low
Blanking time for OVP1
108
100
12
%
%
µs
%
V
relative to output voltage
OVP1 values varies with external resistor
Feedback voltage V DClink/130 can be measured at
VSENSE pin
V OVP1H2L
t OVP1
V OVP1_HYS
DC link treshold (OVP1) hysteresis
DC link treshold (OVP2) low to high
DC link treshold (OVP2) high to low
6
8
11
V OVP2_L2H
428
443
92
460
V OVP2_H2L
relative to OVP2
%
µs
t OVP2
Blanking time for OVP2
12
*recommended supply voltage range: 15-18 V
**switching frequency is setable by an external resistor between pins 14-16 (see figure on page27 for values)
***DC link voltage is setable by an external resistor between pins 14-15 (see figure on page27 for values)
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22000
Ω
%
Deviation of R 100
R 100 = 1486 Ω
-12
12
Power dissipation
Power dissipation constant
B-value
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B ( 25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
6
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
35
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
t p
=
t p =
250
25
μs
°C
250
125
μs
°C
T j =
T j =
U CC from
U CC from
10 V to 17 V in steps of 1 V
10 V to 17 V in steps of 1 V
Figure 3
Output inverter FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
40
35
30
25
20
15
10
Tj = Tjmax-25°C
5
Tj = 25°C
0
0
1
2
3
4
5
VF (V)
At
t p
=
250
μs
copyright Vincotech
7
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 4
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon High T
Eon Low T
Eoff High T
Eoff Low T
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j =
°C
V
25/125
400
V CE
U CC
=
=
15
V
Figure 5
Output inverter FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
0,20
Erec
Tj = Tjmax -25°C
0,15
0,10
0,05
0,00
Tj = 25°C
Erec
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
8
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 6
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(I C)
10,00
1,00
0,10
0,01
0,00
tdoff
tdon
tr
tf
0
2
4
6
8
I C (A)
10
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
=
V
Figure 7
Output inverter FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
0,35
trr
Tj = Tjmax -25°C
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
Tj = 25°C
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
9
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 8
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
1,0
0,8
0,6
0,4
0,2
0,0
Tj = Tjmax -25°C
Qrr
Tj = 25°C
Qrr
0
2
4
6
8
10
12
I
C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 9
Output inverter FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
6
IRRM
IRRM
Tj = Tjmax -25°C
5
Tj = 25°C
4
3
2
1
0
0
2
4
6
8
10
12
I
C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
10
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 10
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
600
dI0/dt
µ
µ
µ
µ
dIrec/dt
500
400
300
200
100
0
I
C (A)
0
2
4
6
8
10
12
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 11
Output inverter IGBT
Figure 12
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
10-5
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
5,79
K/W
6,66
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,30
Tau (s)
6,6E+00
2,1E-01
4,9E-02
1,0E-02
2,9E-03
7,4E-04
R (K/W)
0,62
Tau (s)
3,1E-01
5,4E-02
2,3E-02
4,7E-03
9,8E-04
7,5E-04
0,61
3,07
3,21
0,76
0,84
1,19
0,56
0,95
0,26
0,08
copyright Vincotech
11
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 13
Output inverter IGBT
Figure 14
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
35
30
25
20
15
10
5
12
10
8
6
4
2
0
0
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T s
(
At
At
T j =
T j =
175
°C
175
15
°C
V
U CC
=
Figure 15
Power dissipation as a
Output inverter FWD
Figure 16
Forward current as a
Output inverter FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
30
25
20
15
10
5
12
10
8
6
4
2
0
0
0
50
100
150
200
o C)
T s (
o C)
0
50
100
150
200
T s
(
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
12
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Output Inverter
Figure 17
Output inverter IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
103
1ms
100µs
10ms
100ms
102
101
100
10-1
DC
103
100
VCE (V)
101
102
At
T jmax
15
T j ≤
U CC
=
V
Figure 18
Reverse bias safe operating area
Output inverter IGBT
I C = f(V CE
)
25
20
15
10
5
0
0
VCE (V)
700
100
200
300
400
500
600
At
T j =
T jmax-25
ºC
copyright Vincotech
13
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 1
PFC IGBT
Figure 2
Typical output characteristics
I C = f(V CE
PFC IGBT
Typical output characteristics
I C = f(V CE
)
)
120
120
100
80
60
40
20
0
100
80
60
40
20
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE (V)
VCE (V)
At
At
t p
T j =
t p
=
=
250
25
7 V to 17 V in steps of 1 V
μs
250
125
7 V to 17 V in steps of 1 V
μs
T j =
°C
°C
U CC from
U CC from
Figure 3
PFC FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
120
100
80
60
Tj = 25°C
40
Tj = Tjmax-25°C
20
0
0
1
2
3
4
5
6
7
VF (V)
At
t p
=
250
μs
copyright Vincotech
14
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 4
PFC IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eoff
Eoff
0
5
10
15
20
I
C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
Figure 5
PFC IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
0,08
Erec
Tj = Tjmax -25°C
0,06
0,04
0,02
0,00
Tj = 25°C
Erec
0
5
10
15
20
I C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
15
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 6
PFC IGBT
Typical switching times as a
function of collector current
t = f(I C)
1,00
0,10
0,01
0,00
tdoff
tdon
tr
tf
I D (A)
0
5
10
15
20
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
=
V
Figure 7
PFC FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
0
5
10
15
I C (A)
20
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
16
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 8
PFC FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
0,6
Qrr
0,5
Tj = Tjmax - 25°C
0,4
0,3
Qrr
Tj = 25°C
0,2
0,1
0,0
I C (A)
0
5
10
15
20
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 9
PFC FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
20
Tj = Tjmax - 25°C
IRRM
15
Tj = 25°C
IRRM
10
5
0
0
5
10
15
20
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
17
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 10
PFC FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
12000
10000
8000
6000
4000
2000
0
dI0/dt
dIrec/dt
0
5
10
15
20
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 11
PFC IGBT
Figure 12
PFC FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
D = 0,5
10-1
0,2
0,1
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
4,96
K/W
5,48
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,42
Tau (s)
0,775
0,104
0,033
0,004
0,001
R (K/W)
0,20
Tau (s)
2,872
0,254
0,055
0,007
0,001
2,554
1,288
0,560
0,142
0,69
3,28
0,98
0,33
copyright Vincotech
18
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 13
PFC IGBT
Figure 14
Collector current as a
PFC IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
function of heatsink temperature
I C = f(T s)
40
30
20
10
0
25
20
15
10
5
0
T s
(
o C)
T s
(
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
15
ºC
V
U CC
=
Figure 15
Power dissipation as a
PFC FWD
Figure 16
Forward current as a
PFC FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
35
30
25
20
15
10
5
15
12
9
6
3
0
0
0
50
100
150
200
T s
(
o C)
T s (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
19
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC
Figure 17
PFC IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
102
100mS
101
10uS
DC
100uS
100
1mS
10mS
10-1
102
101
103
VCE (V)
At
single pulse
D =
T s =
80
ºC
U CC
=
15
V
T jmax
T j =
Figure 18
Reverse bias safe operating area
PFC IGBT
I C = f(V CE
)
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE (V)
At
T j =
T jmax-25
ºC
copyright Vincotech
20
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Input Rectifier Diode
Figure 1
Rectifier Diode
Figure 2
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
25
20
15
10
5
101
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
Tj = 25°C
Tj = Tjmax-25°C
0
10-2
0,0
0,5
1,0
1,5
2,0
10-5
10-4
10-3
10-2
10-1
100
10110
t p (s)
VF (V)
At
t p
At
t p / T
=
250
μs
D =
R th(j-s)
=
4,56
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
40
30
20
10
0
15
12
9
6
3
0
o C)
0
30
60
90
120 T s
(
o C)
150
0
30
60
90
120
150
T s
(
At
At
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
21
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Shunt
Figure 1
PFC Shunt
Figure 2
Pulse Power R2
DC Shunt
Pulse Power R1
103
103
Single
Repetitive
Single
Repetitive
102
102
101
101
100
100
10-1
100
102
103
104
t pulse (ms)
t pulse (ms)
101
10-1
100
101
102
103
104
dR /R 0 < 5% after 1 pulse
dR /R 0 < 5% after 10.000 cycles; duty cycle< 0,1%
dR /R 0 < 1% after 1 pulse
dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1%
copyright Vincotech
22
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
45
65
85
105
125
T (°C)
copyright Vincotech
23
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
125 °C
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
125
200
%
IC
tdoff
%
VCE
100
75
50
25
0
150
100
VCE 90%
VGE 90%
IC
VGE
VGE
VCE
tdon
tEoff
50
VCE 3%
VGE10%
IC10%
IC 1%
0
tEon
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
2,9
3,1
3,3
3,5
3,7
3,9
time(us)
time (us)
U IN (0%) =
0
V
U IN (0%) =
0
V
U IN (100%) =
V C (100%) =
I C (100%) =
5
V
U IN (100%) =
V C (100%) =
I C (100%) =
5
V
400
6
V
400
6
V
A
A
t doff
t Eoff
=
=
0,95
1,11
μs
μs
t don
t Eon
=
=
0,63
0,83
μs
μs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
200
%
fitted
%
VCE
IC
175
150
125
100
IC 90%
75
50
25
0
VCE
IC
60%
100
IC90%
IC 40%
75
tr
50
25
IC10%
tf
IC10%
Ic
0
-25
-25
0,6
0,7
0,8
0,9
1
1,1
1,2
3,5
3,6
3,7
3,8
3,9
4
time(us)
time (us)
V C (100%) =
I C (100%) =
t f =
400
6
V
V C (100%) =
I C (100%) =
t r =
400
6
V
A
A
0,02
μs
0,03
μs
copyright Vincotech
24
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
%
Pon
%
Eoff
100
150
Poff
75
50
Eon
100
50
0
IC
1%
25
VGE 10%
VCE
3%
VGE 90%
tEon
0
tEoff
-50
-25
2,9
3,1
3,3
3,5
3,7
3,9
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
time(us)
time (us)
P off (100%) =
E off (100%) =
2,39
kW
mJ
μs
P on (100%) =
E on (100%) =
2,39
0,32
0,83
kW
mJ
μs
0,20
1,11
t Eoff
=
t Eon =
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
120
Id
%
80
trr
40
fitted
Vd
0
IRRM10%
-40
-80
IRRM 90%
IRRM 100%
-120
3,5
3,6
3,7
3,8
3,9
4
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
400
6
V
A
-6
A
t rr
=
0,28
μs
copyright Vincotech
25
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
125
%
%
Erec
Id
Qrr
100
100
tQrr
tErec
50
75
50
25
0
0
-50
Prec
-100
-150
-25
3,5
3,6
3,7
3,8
3,9
4
4,1
4,2
4,3
3,6
3,8
4
4,2
4,4
time(us)
time(us)
I d (100%) =
Q rr (100%) =
6
A
P rec (100%) =
E rec (100%) =
2,39
0,16
0,59
kW
0,67
0,59
μC
μs
mJ
μs
t Qrr
=
t Erec =
copyright Vincotech
26
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Application data
Static logic funtion table
V CC
<V CCUV–
15V
V BS
X
RCIN
ITRIP
ENABLE
X
FAULT
0
LO1,2,3 HO1,2,3
X
X
X
0
0
0
0
<V BSUV–
3.3V
High imp /LIN1,2,3
15V
15V
15V
15V
15V
15V
15V
15V
<3.2V↓
X
0
3.3V
3.3V
3.3V
0
0
0
0
0
0
0
> V IT,TH+
> V RCIN,TH
> V RCIN,TH
0
0
High imp /LIN1,2,3 /HIN1,2,3
High imp
0
0
copyright Vincotech
27
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
PFC enable circuit
Pin Descriptions
Pin #
Pin Name
Pin Description
1
2
NTC2
NTC1
InvS +
InvS -
EN
Temperature sensor connector 1
Temperature sensor connector 2
Inverter sense resistor high-side
Inverter sense resistor low-side
3
4
5
Enable I/O functionality
6
¬Fault
¬LIN3
¬LIN2
¬LIN1
¬HIN3
¬HIN2
¬HIN1
VCC
Fault output, indicates over current or under voltage (negative logic, open-drain output)
Signal input for low-side W phase
Signal input for low-side V phase
Signal input for low-side U phase
Signal input for high-side W phase
Signal input for high-side V phase
Signal input for high-side U phase
Driver circuit supply voltage
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
GND2
VSENSE
FREQ
Inverter ground
PFC Bulk voltage sense
PFC Switching frequency adjust
Rectifier input
AC1
AC2
Rectifier input
DC1 + (coil)
PFC + (coil)
DC1 -
PFC -
Rectifier output DC +
PFC coil connector
Rectifier output DC -
PFC return
DC2 -
DC2 +
W
Inverter input DC -
Inverter input DC +
Output for W phase
Output for V phase
Output for U phase
V
U
copyright Vincotech
28
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
without thermal paste, solder pins
with thermal paste, solder pins
20-1B06IPB010RC-P955A40
20-1B06IPB010RC-P955A40-/3/
20-PB06IPB010RC-P955A40Y
20-PB06IPB010RC-P955A40Y-/3/
without thermal paste, press fit pins
with thermal paste, press fit solder pins
Name
Type&Ver
TTTTTTTVV
Serial
Date code
VIN&Lot
Serial&UL
Text
NN-NNNNNNNNNNNNNN
WWYY
VIN LLLLL
SSSS UL
Type&Ver
Lot number
LLLLL
Date code
WWYY
Datamatrix
TTTTTTTVV
SSSS
Outline
Pin table
Pin
X
Y
1
45
42
0
0
2
3
39
0
4
36
0
5
33
0
6
30
0
7
27
0
8
24
0
9
21
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
18
0
15
0
12
0
9
0
6
0
3
0
0
0
-0,2
4,8
9,8
14,8
19,8
22,5
25,2
30,2
35,2
40,2
45,2
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
copyright Vincotech
29
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
Identification
ID
Component
IGBT
Voltage
600 V
650 V
650 V
650 V
Current
10 A
Function
Inverter Transistor
PFC IGBT
Comment
T1,T2,T3,T4,T5,T6
T7
IGBT
30 A
D12
FWD
30 A
PFC Diode
D11
FWD
6 A
PFC Inverse Diode
PFC Shunt
R3
Resistor
Rectifier
Resistor
Capacitor
Thermistor
D7,D8,D9,D10
1600 V
500 V
12 A
Input Rectifier Diode
DC Shunt
R2
C1
T
DC Link Capacitor
Thermistor
copyright Vincotech
30
08 Apr. 2017 / Revision 8
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instructions for flow 1B packages see vincotech.com website.
Package data for flow 1B packages see vincotech.com website.
Package data
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
20-xB06IPB010RC-P955A40x-D8-14
08 Apr. 2017
Page number correction
6
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be
accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes
without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or
completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that
the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for
reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use provided in la
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
copyright Vincotech
31
08 Apr. 2017 / Revision 8
相关型号：
20-1B06IPB010RC01-P955A45
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels
VINCOTECH
20-1B06IPB010RC02-L815A49
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels
VINCOTECH
20-1B06IPB010RC03-P955A65
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels
VINCOTECH
20-1B12IPA008SC-L239C09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
20-1B12IPA015SC-L579F09
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
20-1C12IBA015SH-LB18A08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明