20-1B06IPB010RC02-L815A49 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 20-1B06IPB010RC02-L815A49 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总28页 (文件大小：2589K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20-1B06IPB010RC02-L815A49
datasheet
flow IPM 1B
600 V / 10 A
Features
flow 1B 17 mm housing
● CIP-topology (converter + inverter + PFC)
● Optimized for PFC frequencies up to 150 kHz *
● Integrated PFC controller circuit with programmable
DC output voltage and PWM frequency
● Inverter gate drive including bootstrap circuit
for high side power supply
● Over current and short circuit protection
● Open emitter or emitter shunts
● Temperature sensor
Schematic
Target Applications
● Embedded Drives
● Industrial Drives
Types
● 20-1B06IPB010RC02-L815A49
● 20-1B06IPB010RC02-L815A49-/3/
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
VRRM
IFAV
IFSM
1600
13
V
A
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
Tj = Tjmax
Surge (non-repetitive) forward current
I2t-value
130
80
A
tp = 10 ms
50 Hz half sine wave
I2t
A2s
W
°C
Ptot
Tj = Tjmax
Power dissipation
15
Tjmax
Maximum Junction Temperature
150
copyright Vincotech
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18 Sept. 2020 / Revision 5
20-1B06IPB010RC02-L815A49
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Switch
VCE
IC
Collector-emitter breakdown voltage
DC collector current
650
12
V
A
Ts = 80 °C
Tj = Tjmax
ICRM
tp limited by Tjmax
VCE ≤ 650 V, Tj ≤ Top
Tj = Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
90
A
90
A
max
Ts = 80 °C
Ptot
VGE
19
W
V
Gate-emitter peak voltage
Maximum Junction Temperature
±20
175
Tjmax
°C
* The integrated PFC controller operating at switching frequencies > 100 kHz might show some limitations depending on the application.
Please contact our sales representative for further details.
PFC Inverse Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
650
5
V
A
Ts = 80 °C
Ts = 80 °C
Tj = Tjmax
tp limited by Tjmax
Tj = Tjmax
Repetitive peak forward current
Power dissipation
12
A
10
W
°C
Tjmax
Maximum Junction Temperature
175
PFC Diode
V RRM
I F
Peak Repetitive Reverse Voltage
DC forward current
650
7
V
A
T s = 80 °C
T s = 80 °C
T j = T jmax
I FRM
P tot
T jmax
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
35
A
11
W
°C
Maximum Junction Temperature
175
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datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Switch
V CE
I C
Collector-emitter breakdown voltage
DC collector current
600
8
V
A
T s = 80 °C
T j = T jmax
I CRM
t p limited by T jmax
V CE ≤ 600 V, T j ≤ 150 °C
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
30
A
20
A
P tot
V GE
T s = 80 °C
16
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
t SC
T j ≤ 150 °C
V GE = 15 V
5
µs
V
V CC
400
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
P tot
T jmax
Peak Repetitive Reverse Voltage
DC forward current
600
8
V
A
T s = 80 °C
T s = 80 °C
T j = T jmax
T j = T jmax
Power dissipation
14
W
°C
Maximum Junction Temperature
175
PFC Shunt
I F
T c = 25 °C
T c = 25 °C
DC forward current
Power dissipation
10
4
A
P tot
W
PFC Controller*
VCC supply voltage
Vsense voltage
V CC
V CC common with gate driver IC
26
26
V
V
V VSENSE
I VSENSE
V FREQ
T jmax
Vsense current
800
5,3
125
µA
V
FREQ pin voltage
Maximum Junction Temperature
°C
*For more information please contact VIN sales representative for the updated release of ICE3PCS02 datasheet
DC - Shunt
I F
DC forward current
Power dissipation
8
2
A
P tot
W
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datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
DC link Capacitor
V MAX
T c = 25 °C
Maximum DC voltage
500
V
Gate Driver*
U CC
U IN
Supply voltage
20
10
V
V
V
Input voltage (LIN, HIN, EN)
Output voltage (FAULT)
U OUT
VCC+0,5
* for more information see infineon's datasheet 6ED003L02-F2
Thermal Properties
T stg
T op
Storage temperature
-40…+125
°C
°C
Operation temperature under switching cond
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
V is
t = 2 s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
V r [V]
V GE [V]
I C [A]
I F [A]
I D [A]
V CE [V]
V DS [V]
T j [°C]
Min
Max
V GS [V]
Input Rectifier Diode
25
125
25
125
25
125
1,04
0,97
0,87
0,74
25
V F
V to
r t
Forward voltage
7
7
7
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
33
I r
1600
25
0,01
phase-change
R th(j-s)
material
K/W
Thermal resistance junction to sink
4,56
λ = 3,4 W/mK
PFC Switch
V GE(th) V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Turn-on delay time
Rise time
0,0003
10
25
3,3
4
4,7
1,9
V
V
25
125
1,28
1,28
V CEsat
I CES
t d(on)
t r
15
0
650
400
25
0,04
mA
25
125
25
125
25
125
25
125
25
125
25
125
21
20
6
8
ns
160
192
2
t d(off)
t f
Turn-off delay time
Fall time
U CC =15 V
10
2
0,086
0,084
0,034
0,061
E on
E off
C ies
Turn-on energy loss
Turn-off energy loss
Input capacitance
mWs
pF
2100
C oss
C rss
Output capacitance
Reverse transfer capacitance
f = 1 MHz
0
25
25
45
7,7
phase-change
material
R th(j-s)
Thermal resistance junction to sink
4,96
K/W
λ = 3,4 W/mK
PFC Inverse Diode
25
125
1,23
1,73
0,97
2,15
V F
Diode forward voltage
6
V
phase-change
material
R th(j-s)
Thermal resistance junction to sink
9,56
K/W
λ = 3,4 W/mK
PFC Diode
25
1,65
1,55
2,1
V F
I rm
Forward voltage
8
V
µA
125
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
400
400
10
25
160
25
125
25
125
25
125
25
125
25
125
3
3
16,7
16
I RRM
t rr
A
ns
0,03
0,04
0,0060
0,009
711
Q rr
U CC =15 V
10
µC
E rec
mWs
A/µs
( di rf/dt )max
893
phase-change
material
R th(j-s)
Thermal resistance junction to sink
9,02
K/W
λ = 3,4 W/mK
PFC Shunt
R 4 value
R
40
mΩ
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
V r [V]
V GE [V]
I C [A]
I F [A]
I D [A]
V CE [V]
V DS [V]
T j [°C]
Min
Max
V GS [V]
Inverter Switch
V GE(th) V CE = V GE
Gate emitter threshold voltage
Collector-emitter saturation voltage*
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time **
Rise time
0,00017 25
4,4
1,7
5
5,6
V
V
25
10
2,20
2,32
2,95
V CEsat
I CES
I GES
R gint
t d(on)
t r
15
125
0
600
0
25
0,1
mA
nA
Ω
20
25
120
none
25
125
25
125
25
582
631
20
25
ns
837
t d(off)
t f
Turn-off delay time **
Fall time
U CC =15 V
U IN = 5 V
125
25
950
400
6
16
125
25
125
25
125
22
0,1950
0,3241
0,1611
0,2042
E on
E off
C ies
Turn-on energy loss
mWs
pF
Turn-off energy loss
Input capacitance
655
C oss
C rss
Q G
Output capacitance
f = 1 MHz
0
25
25
25
37
Reverse transfer capacitance
Gate charge
22
15
480
10
64
nC
phase-change
material
R th(j-s)
Thermal resistance junction to sink
5,79
K/W
λ = 3,4 W/mK
* chip data
** including gate driver
Inverter Diode
25
125
25
125
25
125
25
125
25
125
25
125
1,5
2,23
2,18
6
2,85
V F
I RRM
Diode forward voltage
10
6
V
A
Peak reverse recovery current
Reverse recovery time
6
179
276
0,3566
0,6738
181
46
0,0867
0,1610
t rr
ns
U CC =15 V
U IN = 5 V
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
400
µC
( di rf/dt )max
A/µs
mWs
E rec
phase-change
material
R th(j-s)
Thermal resistance junction to sink
6,66
K/W
λ = 3,4 W/mK
DC - Shunt
R 2 value
R
25
30
mΩ
nF
DC link Capacitor
C value
C
100
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
V r [V]
V GE [V]
I C [A]
I F [A]
I D [A]
V CE [V]
V DS [V]
T j [°C]
Min
Max
V GS [V]
Gate Driver
U CC
I QCC
Supply voltage
13
15
17,5
2
V
U LIN = 0 V; U HIN = 3,3 V
Quiescent Vcc supply current
Input voltage (LIN, HIN, EN)
Logic "0" input voltage (LIN, HIN)
Logic "1" input voltage (LIN, HIN)
Positive going threshold voltage (EN)
Negative going threshold voltage (EN)
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
Input bias current LIN high
1,3
mA
U IN
0
5
U I H
1,7
0,7
1,9
1,1
9
2,1
0,9
2,1
1,3
10,3
445
70
2,4
1,1
2,3
1,5
12
U IL
U CC = 15 V
V
U EN, TH+
U EN, TH-
U IN, CLAMP I IN = 4 mA
U TR, TH+
380
510
100
200
100
120
120
U CC
mV
μA
I LIN+
I LIN-
I HIN+
I HIN-
I EN+-
U FLT
U LIN = 3,3 V
U LIN = 0 V
25
Input bias current LIN low
110
70
U HIN = 3,3 V
U HIN = 0 V
Input bias current HIN high
Input bias current HIN low
110
45
U HIN = 3,3 V
Input bias current EN high
Output voltage (FAULT)
0
V
Ω
R ON, FLT U FAULT = 0,5 V
Low on resistor of pull down trans. (FAULT)
Pulse width for ON or OFF
45,0
100
t IN
1
μs
t ON
Turn-on propagation delay (LIN, HIN)
Turn-off propagation delay (LIN, HIN)
FAULT reset time
400
360
530
490
4
800
760
U LIN/HIN = 0 V or 3,3 V
ns
t OFF
t RST
t DT
ms
ns
U LIN/HIN = 0 V & 3,3 V
Fixed deadtime between high and low side
150
310
PFC Controller
V CC
V CCon
V CCUVLO
I CCHG
Supply voltage*
15
26
12,9
11,9
8,5
V
V
VCC turn-on threshold
11,5
10,5
12,0
11,0
6,4
VCC turn-off threshold
V
C L = 1 nF
Operating current with active GATE
Operating current during standby
PFC switching frequency
mA
mA
kHz
V
I CCstby
3,5
4,7
F SWnom Set with an internal resistor R FREQ = 91 kΩ**
50
pull Vsense higher than Vdis PFC to disable PFC
operation
V dis PFC
PFC disable threshold
14
DC2+ Set with an internal resistor divider***
25
DC link voltage
325
410
V
V OVP1L2H
DC link treshold (OVP1) low to high
DC link treshold (OVP1) high to low
Blanking time for OVP1
108
100
12
%
%
µs
%
V
relative to output voltage with VSENSE pin
unconnected
VSENSE pin voltage V DClink/130
V OVP1H2L
t OVP1
V OVP1_HYS
V OVP2_L2H
V OVP2_H2L
DC link treshold (OVP1) hysteresis
DC link treshold (OVP2) low to high
DC link treshold (OVP2) high to low
6
8
11
428
443
92
460
relative to OVP2
%
µs
t OVP2
Blanking time for OVP2
12
*recommended supply voltage range: 15-18 V
**switching frequency is setable by an external resistor between pins 14-16 (see figure on page24 for values)
***DC link voltage is setable by an external resistor between pins 14-15 (see figure on page24 for values)
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22000
Ω
%
Deviation of R 100
R 100 = 1486 Ω
-12
12
Power dissipation
Power dissipation constant
B-value
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B ( 25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
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datasheet
Output Inverter
figure 1.
Output inverter IGBT
figure 2.
Output inverter IGBT
Typical output characteristics
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
At
At
t p
=
t p =
250
25
μs
°C
250
125
μs
°C
T j =
T j =
U CC from
U CC from
10 V to 17 V in steps of 1 V
10 V to 17 V in steps of 1 V
figure 3.
Output inverter FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Tj = Tjmax-25°C
Tj = 25°C
At
t p
=
250
μs
copyright Vincotech
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datasheet
Output Inverter
figure 4.
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
With an inductive load at
T j =
°C
V
25/125
400
V CE
U CC
=
=
15
V
figure 5.
Output inverter FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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datasheet
Output Inverter
figure 6.
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(I C)
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
=
V
figure 7.
Output inverter FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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datasheet
Output Inverter
figure 8.
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 9.
Output inverter FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
At
T j =
25/125
400
°C
V CE
U CC
=
V
V
=
15
copyright Vincotech
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datasheet
Output Inverter
figure 10.
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
dI0/dt
µ
µ
µ
µ
dIrec/dt
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 11.
Output inverter IGBT
figure 12.
Output inverter FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
102
100
101
10-5
10-4
10-3
10-2
10-1
102
100
101
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
5,79
K/W
6,66
K/W
IGBT thermal model values
Tau (s)
FWD thermal model values
Tau (s)
R (K/W)
R (K/W)
3,03E-01 6,63E+00
6,11E-01 2,13E-01
3,21E+00 4,88E-02
8,43E-01 1,03E-02
5,62E-01 2,85E-03
2,59E-01 7,40E-04
6,16E-01 3,13E-01
3,07E+00 5,41E-02
7,56E-01 2,30E-02
1,19E+00 4,70E-03
9,47E-01 9,78E-04
7,59E-02 7,51E-04
copyright Vincotech
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datasheet
Output Inverter
figure 17.
Output inverter IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
103
1ms
100µs
10ms
100ms
102
101
100
DC
10-1
103
100
101
102
At
T jmax
15
T j ≤
U CC
=
V
figure 18.
Reverse bias safe operating area
Output inverter IGBT
I C = f(V CE
)
I
At
T j =
T jmax-25
ºC
copyright Vincotech
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datasheet
PFC
figure 1.
PFC IGBT
figure 2.
Typical output characteristics
I C = f(V CE
PFC IGBT
Typical output characteristics
I C = f(V CE
)
)
At
At
t p
T j =
U CC from
t p
=
=
250
25
μs
°C
250
125
μs
°C
T j =
U CC from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
figure 3.
PFC FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Tj = 25°C
Tj = Tjmax-25°C
At
t p
=
250
μs
copyright Vincotech
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18 Sept. 2020 / Revision 5
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datasheet
PFC
figure 4.
PFC IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
figure 5.
PFC IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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datasheet
PFC
figure 6.
PFC IGBT
Typical switching times as a
function of collector current
t = f(I C)
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
=
V
figure 7.
PFC FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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datasheet
PFC
figure 8.
PFC FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
figure 9.
PFC FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
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datasheet
PFC
figure 10.
PFC FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
dI0/dt
dIrec/dt
At
T j =
25/125
400
°C
V CE
U CC
=
V
V
=
15
figure 11.
PFC IGBT
figure 12.
PFC FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
D = 0,5
0,2
0,1
0,2
0,1
10-1
10-1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
2
1
102
10-5
10-4
10-3
10-2
10-1
100
10
10
10-5
10-4
10-3
10-2
10-1
100
101
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
4,96
K/W
9,02
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
4,18E-01 7,75E-01
2,55E+00 1,04E-01
1,29E+00 3,31E-02
5,60E-01 3,97E-03
1,42E-01 5,99E-04
2,70E-01 2,21E+00
9,02E-01 2,29E-01
5,68E+00 5,28E-02
1,76E+00 9,35E-03
4,06E-01 1,91E-03
copyright Vincotech
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20-1B06IPB010RC02-L815A49
datasheet
PFC
figure 17.
PFC IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
102
100mS
10uS
101
DC
100uS
100
1mS
10mS
10-1
101
102
103
At
single pulse
D =
T s =
80
ºC
U CC
=
15
V
T jmax
T j =
figure 18.
Reverse bias safe operating area
PFC IGBT
I C = f(V CE
)
I
At
T j =
T jmax-25
ºC
copyright Vincotech
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20-1B06IPB010RC02-L815A49
datasheet
Input Rectifier Diode
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F = f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
Tj = 25°C
Tj = Tjmax-25°C
10-2
102
10-5
10-4
10-3
10-2
10-1
100
101
At
At
t p / T
t p
=
250
μs
D =
R th(j-s)
=
4,56
K/W
Thermistor
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T )
copyright Vincotech
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18 Sept. 2020 / Revision 5
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datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
125 °C
figure 1.
Output inverter IGBT
figure 2.
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
IC
tdoff
VCE
IC
VGE
VGE
VCE
tEoff
tEon
U IN (0%) =
0
V
U IN (0%) =
0
V
U IN (100%) =
V C (100%) =
I C (100%) =
5
V
U IN (100%) =
V C (100%) =
I C (100%) =
5
V
400
6
V
400
6
V
A
A
t doff
t Eoff
=
=
0,95
1,11
μs
μs
t don
t Eon
=
=
0,63
0,83
μs
μs
figure 3.
Output inverter IGBT
figure 4.
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
VCE
tr
tf
Ic
V C (100%) =
I C (100%) =
t f =
400
V
V C (100%) =
I C (100%) =
t r =
400
6
V
6
A
A
0,02
μs
0,03
μs
copyright Vincotech
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datasheet
Switching Definitions Output Inverter
figure 5.
Output inverter IGBT
figure 6.
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEon
tEoff
P off (100%) =
E off (100%) =
2,39
kW
mJ
μs
P on (100%) =
E on (100%) =
2,39
0,32
0,83
kW
0,20
1,11
mJ
μs
t Eoff
=
t Eon =
figure 7.
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
Id
fitted
Vd
V d (100%) =
I d (100%) =
I RRM (100%) =
400
6
V
A
-6
A
t rr
=
0,28
μs
copyright Vincotech
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datasheet
Switching Definitions Output Inverter
figure 8.
Output inverter FWD
figure 9.
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
Erec
Id
Qrr
tErec
Prec
time(μs)
I d (100%) =
Q rr (100%) =
6
A
P rec (100%) =
E rec (100%) =
2,39
0,16
0,59
kW
mJ
μs
0,67
0,59
μC
μs
t Qrr
=
t Erec =
copyright Vincotech
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datasheet
Application data
Static logic funtion table
V CC
<V CCUV–
15V
V BS
X
<V BSUV–
RCIN
X
X
ITRIP
X
0
ENABLE
X
3.3V
FAULT
0
High imp /LIN1,2,3
LO1,2,3 HO1,2,3
0
0
0
15V
15V
15V
15V
15V
15V
15V
15V
<3.2V↓
X
> V RCIN,TH
> V RCIN,TH
0
3.3V
3.3V
3.3V
0
0
0
0
0
0
0
> V IT,TH+
0
0
High imp /LIN1,2,3 /HIN1,2,3
High imp
0
0
References for externally setable parameters
copyright Vincotech
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datasheet
PFC enable circuit
Pin Descriptions
Pin #
Pin Name
Pin Description
1
Therm1
COM
Temperature sensor connector 1
Low-side gate driver reference
Analog input for over-current shot down, activates FAULT
Enable I/O functionality
2
3
ITRIP
4
EN
5
¬Fault
¬LIN3
¬LIN2
¬LIN1
¬HIN3
¬HIN2
¬HIN1
VCC
GND_INV
GND_PFC
VSENSE
FREQ
Fault output, indicates over current or under voltage (negative logic, open-drain o
Signal input for low-side Ph3 phase
Signal input for low-side Ph2 phase
Signal input for low-side Ph1 phase
Signal input for high-side Ph3 phase
Signal input for high-side Ph2 phase
Signal input for high-side Ph1 phase
Driver circuit supply voltage
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Inverter ground
PFC ground
PFC Bulk voltage sense
PFC Switching frequency adjust
Rectifier input
ACIn1
ACIn2
DC+Rect
PFC
Rectifier input
Rectifier output DC +
PFC coil connector
DC-Rect
DC-SH
DC-PFC
DC+PFC
DC+INV
Ph3
Rectifier output DC -
Current Sense Input for PFC Controller
PFC capacitor GND (internally connected to GND_PFC)
PFC capacitor + (output of the PFC stage)
Inverter input DC +
Output for Ph3 phase
Ph2
Output for Ph2 phase
Ph1
Output for Ph1 phase
DC-3
Inverter input DC - for Ph3
DC-3SH+
DC-2SH+
DC-2
Inverter Sense Resistor for Ph3 - High Side
Inverter Sense Resistor for Ph2 - High Side
Inverter input DC - for Ph2
DC-1
DC-1SH+
Inverter input DC - for Ph1
Inverter Sense Resistor for Ph2 - High Side
copyright Vincotech
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20-1B06IPB010RC02-L815A49
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
20-1B06IPB010RC02-L815A49
20-1B06IPB010RC02-L815A49-/3/
Name
Date code
UL
&
VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL VIN
Date code
WWYY
LLLLL
SSSS
Type&Ver
Lot number
Serial
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin table [mm]
Pin
1
Function
X
Y
Function
Pin
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
X
Y
45,2
42,2
39,2
36,2
33,2
30,2
27,2
24,2
21,2
18,2
15,2
12,2
9,2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
NTC
COM
10
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
21,9
20,1
17,6
14,2
14,2
10,9
6,3
DC+Rect
PFC
2
15
3
ITRIP
EN
20
DC-Rect
DC-SH
DC-PFC
DC+PFC
DC+Inv
Ph3
4
22,7
25,4
30,4
33,1
38,1
43,1
45,4
28,3
27,3
32,4
34,9
41,5
39
5
FAULT
LIN3
6
7
LIN2
8
LIN1
9
HIN3
HIN2
HIN1
VCC
Ph2
10
11
12
13
14
15
16
17
18
Ph1
DC-3
DC-3SH
DC-2SH
DC-2
GND_INV
GND_PFC
VSEN
FREQ
6,2
3,2
DC-1
0,2
DC-1SH
0
5
26,4
26,4
ACIn1
ACIn2
18 Sept. 2020 / Revision 5
copyright Vincotech
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20-1B06IPB010RC02-L815A49
datasheet
Pinout
Identification
Current
ID
Component
Voltage
Function
Comment
T1-T6
T27
IGBT
IGBT
600 V
650 V
650 V
650 V
10 A
30 A
8 A
Inverter Switch
PFC Switch
D27
FWD
PFC Diode
D47
FWD
6 A
PFC Inverse Diode
PFC Shunt
R4
Resistor
Rectifier
Resistor
Capacitor
Thermistor
D31-D34
R1-R3
C1
1600 V
500 V
7 A
Rectifier Diode
DC Link Shunt
Capacitor (DC)
Thermistor
Rt
copyright Vincotech
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20-1B06IPB010RC02-L815A49
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instructions for flow 1B packages see vincotech.com website.
Package data for flow 1B packages see vincotech.com website.
Package data
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Update condition of OVP parameters
Pages
7
20-1B06IPB010RC02-L815A49-D5-14
18 Sept. 2020
Add simplified schematic to show Rvset, Rfset resistor
Correct Pin description table
24
25
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be
accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes
without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or
completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or
that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for
reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use provided in la
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
copyright Vincotech
28
18 Sept. 2020 / Revision 5
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