10-PZ07FCA100RG-LQ35L60Y [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-PZ07FCA100RG-LQ35L60Y |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总47页 (文件大小：12275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PZ07FCA100RG-LQ35L60Y
datasheet
flowFC 0
1200 V / 100 A
Features
flow 0 12 mm housing
● Three-level flying capacitor topology
● Ultra-fast 650V components
● Integrated capacitor
● Integrated NTC
Schematic
Target applications
● Solar Inverters
Types
● 10-PZ07FCA100RG-LQ35L60Y
Copyright Vincotech
1
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 1 Switch L
VCES
Collector-emitter voltage
650
80
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
400
130
±30
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 1 Diode L
VRRM
Peak repetitive reverse voltage
650
76
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
400
104
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
AC 1 Switch H
VCES
Collector-emitter voltage
650
80
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
400
130
±30
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 1 Diode H
VRRM
Peak repetitive reverse voltage
650
76
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
400
104
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
AC 2 Switch L
VCES
Collector-emitter voltage
650
80
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
400
130
±30
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 2 Diode L
VRRM
Peak repetitive reverse voltage
650
76
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
400
104
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
3
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 2 Switch H
VCES
Collector-emitter voltage
650
80
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
400
130
±30
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 2 Diode H
VRRM
Peak repetitive reverse voltage
650
76
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
400
104
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Flying Capacitor
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
8,45
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
4
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Switch L
Static
VGE(th)
Gate-emitter threshold voltage
5
0,066
100
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,02
0,4
mA
µA
Ω
30
None
8400
208
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
158
15
400
100
282
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,73
K/W
25
145,12
136,32
134,08
25,76
26,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
26,4
Rgon = 21,3 Ω
Rgoff = 21,3 Ω
430,72
462,56
472,32
15,52
16,76
22,68
2,98
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
70
tf
125
150
25
ns
QrFWD=2,23 µC
QrFWD=3,92 µC
QrFWD=4,72 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,72
mWs
mWs
4,04
2,41
Eoff
125
150
2,82
2,98
Copyright Vincotech
5
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Diode L
Static
25
1,5
1,9(1)
VF
IR
Forward voltage
100
125
150
1,57
1,54
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,92
K/W
25
74,4
87,77
93,12
69,37
97,24
102,46
2,23
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3223 A/µs
di/dt=3036 A/µs
di/dt=3069 A/µs
Qr
Recovered charge
-5/15
600
70
125
150
25
3,92
μC
4,72
0,546
1,04
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,28
4566
2784
2162
(dirf/dt)max
125
150
Copyright Vincotech
6
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Switch H
Static
VGE(th)
Gate-emitter threshold voltage
5
0,066
100
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,02
0,4
mA
µA
Ω
30
None
8400
208
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
158
15
400
100
282
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,73
K/W
25
145,12
136,32
134,08
25,76
26,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
26,4
Rgon = 21,3 Ω
Rgoff = 21,3 Ω
430,72
462,56
472,32
15,52
16,76
22,68
2,98
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
70
tf
125
150
25
ns
QrFWD=2,23 µC
QrFWD=3,92 µC
QrFWD=4,72 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,72
mWs
mWs
4,04
2,41
Eoff
125
150
2,82
2,98
Copyright Vincotech
7
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Diode H
Static
25
1,5
1,9(1)
VF
IR
Forward voltage
100
125
150
1,57
1,54
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,92
K/W
25
74,4
87,77
93,12
69,37
97,24
102,46
2,23
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3223 A/µs
di/dt=3036 A/µs
di/dt=3069 A/µs
Qr
Recovered charge
-5/15
600
70
125
150
25
3,92
μC
4,72
0,546
1,04
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,28
4566
2784
2162
(dirf/dt)max
125
150
Copyright Vincotech
8
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Switch L
Static
VGE(th)
Gate-emitter threshold voltage
5
0,066
100
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,02
0,4
mA
µA
Ω
30
None
8400
208
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
158
15
400
100
282
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,73
K/W
25
113,12
106,88
105,28
20,64
21,12
21,12
327,52
355,68
363,84
6,58
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
70
tf
125
150
25
29,31
35,84
2,54
ns
QrFWD=2,25 µC
QrFWD=4,13 µC
QrFWD=4,91 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,32
mWs
mWs
3,6
2,07
Eoff
125
150
2,5
2,65
Copyright Vincotech
9
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Diode L
Static
25
1,5
1,9(1)
VF
IR
Forward voltage
100
125
150
1,57
1,54
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,92
K/W
25
79,53
95,04
100,2
67,91
89,42
95,11
2,25
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3999 A/µs
di/dt=3924 A/µs
di/dt=3777 A/µs
Qr
Recovered charge
-5/15
600
70
125
150
25
4,13
μC
4,91
0,576
1,17
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,43
4919
2743
1906
(dirf/dt)max
125
150
Copyright Vincotech
10
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Switch H
Static
VGE(th)
Gate-emitter threshold voltage
5
0,066
100
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,02
0,4
mA
µA
Ω
30
None
8400
208
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
158
15
400
100
282
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,73
K/W
25
113,12
106,88
105,28
20,64
21,12
21,12
327,52
355,68
363,84
6,58
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
70
tf
125
150
25
29,31
35,84
2,54
ns
QrFWD=2,25 µC
QrFWD=4,13 µC
QrFWD=4,91 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
3,32
mWs
mWs
3,6
2,07
Eoff
125
150
2,5
2,65
Copyright Vincotech
11
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Diode H
Static
25
1,5
1,9(1)
VF
IR
Forward voltage
100
125
150
1,57
1,54
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,92
K/W
25
79,53
95,04
100,2
67,91
89,42
95,11
2,25
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3999 A/µs
di/dt=3924 A/µs
di/dt=3777 A/µs
Qr
Recovered charge
-5/15
600
70
125
150
25
4,13
μC
4,91
0,576
1,17
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,43
4919
2743
1906
(dirf/dt)max
125
150
Copyright Vincotech
12
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Flying Capacitor
Static
DC bias voltage =
0 V
C
Capacitance
Tolerance
25
100
nF
%
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
13
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switch L Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,733
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,27E-02
1,24E-01
3,66E-01
1,28E-01
5,34E-02
3,01E+00
4,67E-01
7,22E-02
1,58E-02
1,74E-03
Copyright Vincotech
14
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switch L Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Diode L Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,916
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,07E-02
1,48E-01
4,69E-01
1,61E-01
6,79E-02
3,18E+00
4,44E-01
7,12E-02
9,29E-03
6,09E-04
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switch H Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,733
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,27E-02
1,24E-01
3,66E-01
1,28E-01
5,34E-02
3,01E+00
4,67E-01
7,22E-02
1,58E-02
1,74E-03
Copyright Vincotech
17
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switch H Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Diode H Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,916
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,07E-02
1,48E-01
4,69E-01
1,61E-01
6,79E-02
3,18E+00
4,44E-01
7,12E-02
9,29E-03
6,09E-04
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switch L Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 17.
IGBT
figure 18.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,733
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,27E-02
1,24E-01
3,66E-01
1,28E-01
5,34E-02
3,01E+00
4,67E-01
7,22E-02
1,58E-02
1,74E-03
Copyright Vincotech
20
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switch L Characteristics
figure 19.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Diode L Characteristics
figure 20.
FWD
figure 21.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,916
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,07E-02
1,48E-01
4,69E-01
1,61E-01
6,79E-02
3,18E+00
4,44E-01
7,12E-02
9,29E-03
6,09E-04
Copyright Vincotech
22
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switch H Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 24.
IGBT
figure 25.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,733
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,27E-02
1,24E-01
3,66E-01
1,28E-01
5,34E-02
3,01E+00
4,67E-01
7,22E-02
1,58E-02
1,74E-03
Copyright Vincotech
23
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switch H Characteristics
figure 26.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Diode H Characteristics
figure 27.
FWD
figure 28.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,916
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,07E-02
1,48E-01
4,69E-01
1,61E-01
6,79E-02
3,18E+00
4,44E-01
7,12E-02
9,29E-03
6,09E-04
Copyright Vincotech
25
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Thermistor Characteristics
figure 29.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics L
figure 30.
IGBT
figure 31.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
10
Eon
Eon
Eon
Eon
Eoff
Eoff
8
Eon
Eon
Eoff
6
Eoff
Eoff
Eoff
4
2
0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
21,3
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
figure 32.
FWD
figure 33.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics L
figure 34.
IGBT
figure 35.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(on)
td(off)
td(on)
-1
10
0
10
tr
tf
-2
10
-1
10
tr
tf
-3
10
-2
10
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
°C
V
150
600
-5/15
70
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
-5/15
21,3
21,3
V
Ω
Ω
figure 36.
FWD
figure 37.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics L
figure 38.
FWD
figure 39.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 40.
FWD
figure 41.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
125
100
75
50
25
0
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
25
0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics L
figure 42.
FWD
figure 43.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 44.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
21,3
21,3
°C
Ω
Rgon
Rgoff
=
=
Ω
Copyright Vincotech
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12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics H
figure 45.
IGBT
figure 46.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
10
Eon
Eon
Eon
Eon
Eoff
Eoff
8
Eon
Eon
Eoff
6
Eoff
Eoff
Eoff
4
2
0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
21,3
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
figure 47.
FWD
figure 48.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
31
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics H
figure 49.
IGBT
figure 50.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(off)
td(on)
td(off)
td(on)
-1
10
0
10
tr
tf
-2
10
-1
10
tr
tf
-3
10
-2
10
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
°C
V
150
600
-5/15
70
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
-5/15
21,3
21,3
V
Ω
Ω
figure 51.
FWD
figure 52.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
32
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics H
figure 53.
FWD
figure 54.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 55.
FWD
figure 56.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
125
100
75
50
25
0
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
25
0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
33
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 1 Switching Characteristics H
figure 57.
FWD
figure 58.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
6000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
21,3
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 59.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
21,3
21,3
°C
Ω
Rgon
Rgoff
=
=
Ω
Copyright Vincotech
34
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics L
figure 60.
IGBT
figure 61.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 62.
FWD
figure 63.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
35
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics L
figure 64.
IGBT
figure 65.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
td(on)
tf
-1
10
tr
-2
10
tr
tf
-3
10
-2
10
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-5/15
16
°C
V
150
600
-5/15
70
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 66.
FWD
figure 67.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
36
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics L
figure 68.
FWD
figure 69.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 70.
FWD
figure 71.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
37
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics L
figure 72.
FWD
figure 73.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
7000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 74.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
38
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics H
figure 75.
IGBT
figure 76.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 77.
FWD
figure 78.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
39
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics H
figure 79.
IGBT
figure 80.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
td(on)
tf
-1
10
tr
-2
10
tr
tf
-3
10
-2
10
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-5/15
16
°C
V
150
600
-5/15
70
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 81.
FWD
figure 82.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
40
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics H
figure 83.
FWD
figure 84.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 85.
FWD
figure 86.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
41
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
AC 2 Switching Characteristics H
figure 87.
FWD
figure 88.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
7000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
-5/15
16
V
V
Ω
125 °C
150 °C
600
-5/15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 89.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
42
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Switching Definitions
figure 90.
IGBT
figure 91.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 92.
IGBT
figure 93.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
43
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Switching Definitions
figure 94.
FWD
figure 95.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
44
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PZ07FCA100RG-LQ35L60Y
10-PZ07FCA100RG-LQ35L60Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Therm1
Therm2
S12
33,6
33,6
25,05
25,05
0
6,3
0
2
3
3
4
0
G12
S14
5
0
6
0
3
G14
Ph
7
0
11,15
13,85
16,55
22,6
22,6
22,6
22,6
14,65
14,65
11,9
11,9
10,5
9,6
8
0
Ph
9
0
Ph
10
11
12
13
14
15
16
17
18
19
20
21
0
S13
3
G13
G11
S11
30,6
33,6
16,6
19,3
30,9
33,6
9,65
12,35
16,75
16,75
DC+
DC+
DC-
DC-
FC+
FC+
FC-
4,6
1,9
FC-
Copyright Vincotech
45
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Pinout
DC+
14,15
T11
T13
T14
T12
D12
D14
D13
D11
G11
12
S11
13
FC+
18,19
G13
11
S13
10
C30
Ph
07-09
G14
06
S14
05
FC-
20,21
G12
04
S12
03
Rt
DC-
16,17
Therm1
01
Therm2
02
Identification
Component
Voltage
Current
Function
Comment
ID
T12
D11
T11
D12
T14
D13
T13
D14
C30
Rt
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
650 V
650 V
650 V
630 V
100 A
100 A
100 A
100 A
100 A
100 A
100 A
100 A
AC 1 Switch L
AC 1 Diode L
AC 1 Switch H
AC 1 Diode H
AC 2 Switch L
AC 2 Diode L
AC 2 Switch H
AC 2 Diode H
Flying Capacitor
Thermistor
IGBT
FWD
IGBT
FWD
IGBT
FWD
Capacitor
Thermistor
Copyright Vincotech
46
12 Nov. 2020 / Revision 1
10-PZ07FCA100RG-LQ35L60Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PZ07FCA100RG-LQ35L60Y-D1-14
12 Nov. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
47
12 Nov. 2020 / Revision 1
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