10-PZ123BA040MR01-M909L68Y [VINCOTECH]
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode;
| 型号： | 10-PZ123BA040MR01-M909L68Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode |
| 文件： | 总19页 (文件大小：7801K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PZ123BA040MR01-M909L68Y
datasheet
flow3xBOOST 0 SIC
1200 V / 45 mΩ
Features
flow 0 12 mm housing
● 3x booster with SiC MOSFET and SiC diode
● ultrafast switching
● low inductive design
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 10-PZ123BA040MR01-M909L68Y
Copyright Vincotech
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19 Sep. 2021 / Revision 1
10-PZ123BA040MR01-M909L68Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VDSS
Drain-source voltage
1200
33
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
137
A
Ptot
Total power dissipation
Gate-source voltage
68
W
V
VGSS
-4 / 22
175
Tjmax
Maximum Junction Temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
19
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
50
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
36
A
Tj = Tjmax
56
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
0 ... 125
°C
Copyright Vincotech
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10-PZ123BA040MR01-M909L68Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
10,19
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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19 Sep. 2021 / Revision 1
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Switch
Static
25
39
51
60
50(1)
rDS(on)
Drain-source on-state resistance
18
20
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,01
25
25
25
2,7
3,9
5,6
100
10
V
22
0
0
nA
µA
Ω
1200
1
7
Qg
VDD = 600 V
18
0
20
0
25
25
25
107
1337
76
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 1 Mhz
800
pF
V
27
0
20
3,2
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,41
K/W
25
11,45
10,53
10,46
7,57
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
7,3
7,3
Rgon = 4 Ω
Rgoff = 4 Ω
65,75
77,98
81,09
6,89
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/18
700
32
tf
125
150
25
7,29
ns
7,17
QrFWD=0,048 µC
QrFWD=0,053 µC
QrFWD=0,056 µC
0,329
0,309
0,307
0,435
0,484
0,497
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,45
1,76
1,89
10
1,6(1)
200
VF
IR
Forward voltage
10
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
80
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,7
K/W
25
12,82
13,5
IRRM
Peak recovery current
125
150
25
A
13,85
6,89
trr
Reverse recovery time
125
150
25
7,35
ns
7,61
0,048
0,053
0,056
9,723x10-3
0,011
0,012
6588,31
6038,64
6120,43
di/dt=4100 A/µs
di/dt=4306 A/µs
di/dt=4470 A/µs
Qr
Recovered charge
0/18
700
32
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
47
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
175
175
150
125
100
75
VGS
:
-20 V
-18 V
-16 V
-14 V
-12 V
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
150
125
100
75
50
25
0
2 V
-25
-50
-75
-100
-125
-150
-175
4 V
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
50
25
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
DS(V)
-25
-20 -15
-10
-5
0
5
10
15
20
25
V
VDS(V)
tp
=
tp
=
250
18
μs
V
250
150
μs
°C
25 °C
VGS
=
Tj =
125 °C
150 °C
Tj:
VGS from -20 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
90
80
10
70
60
50
40
30
20
10
0
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,407
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,24E-01
3,91E-01
6,76E-01
1,21E-01
9,55E-02
1,00E+00
1,66E-01
6,11E-02
5,50E-03
8,02E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
18
°C
V
VGS
=
Tj =
Tjmax
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datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,699
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,56E-02
1,65E-01
7,86E-01
3,27E-01
2,54E-01
1,20E-01
3,21E+00
3,88E-01
6,52E-02
1,11E-02
2,71E-03
6,15E-04
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Boost Switching Characteristics
figure 9.
MOSFET
figure 10.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,25
1,00
0,75
0,50
0,25
0,00
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
700
0/18
4
V
125 °C
150 °C
700
0/18
32
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Rgon
Rgoff
Ω
Ω
4
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
700
0/18
4
V
V
Ω
125 °C
150 °C
700
0/18
32
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
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datasheet
Boost Switching Characteristics
figure 13.
MOSFET
figure 14.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
tr
td(on)
tf
td(on)
-2
10
-2
tr
10
tf
-3
10
-3
10
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/18
4
°C
150
700
0/18
32
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
Ω
Ω
V
V
A
VGS
Rgon
Rgoff
VGS
ID
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,012
0,010
0,008
0,006
0,004
0,002
0,000
0,012
0,010
0,008
0,006
0,004
0,002
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
700
0/18
4
V
V
Ω
At
700
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
0/18
32
125 °C
150 °C
Tj:
Tj:
Rgon
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datasheet
Boost Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
0/18
4
V
V
At
700
0/18
32
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0,0
0
10
20
30
40
50
60
70
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
0/18
4
V
V
At
700
0/18
32
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
Copyright Vincotech
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Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
8000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
700
0/18
4
V
V
Ω
At
700
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
0/18
32
125 °C
150 °C
Tj:
Tj:
Rgon
figure 23.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
45
ID MAX
40
35
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
4
4
Ω
Ω
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datasheet
Boost Switching Definitions
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
MOSFET
figure 27.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
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datasheet
Boost Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 30.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PZ123BA040MR01-M909L68Y
10-PZ123BA040MR01-M909L68Y-/7/
10-PZ123BA040MR01-M909L68Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+
DC-
E5
33,4
25,4
25,05
25,05
22,25
22,25
22,25
14,25
8
0
2
0
3
2,8
5,6
5,6
2,8
0
4
G5
5
G3
6
E3
7
DC-
DC+
DC+
DC-
E1
8
0
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
0
0
0
2,8
5,6
22,2
22,2
19,2
16,4
10,2
11,5
16,4
19,2
22,2
22,2
22,2
22,2
19,2
16,4
0
G1
0
PH11
PH12
G2
7,15
7,75
7,75
8,35
11,15
13,75
13,75
13,15
19,65
25,65
33,4
31,55
31,55
E2
NTC1
NTC2
E4
G4
PH21
PH22
PH31
PH32
G6
E6
Copyright Vincotech
17
19 Sep. 2021 / Revision 1
10-PZ123BA040MR01-M909L68Y
datasheet
Pinout
DC+
9
DC+
8
DC+
1
D1
D3
D5
PH11
13
PH22
22
PH31
23
C1
C2
C3
T1
T3
T5
NTC
G1
12
G3
5
G5
4
E1
11
E3
6
E5
3
NTC1
17
NTC2
18
DC-
10
DC-
7
DC-
2
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T3, T5
D1, D3, D5
C2, C3, C1
NTC
MOSFET
FWD
1200 V
1200 V
1000 V
40 mΩ
10 A
Boost Switch
Boost Diode
Capacitor (DC)
Thermistor
Capacitor
NTC
Copyright Vincotech
18
19 Sep. 2021 / Revision 1
10-PZ123BA040MR01-M909L68Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PZ123BA040MR01-M909L68Y-D1-14
19 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
19 Sep. 2021 / Revision 1
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