10-PZ074PA030SM-L623F08Y [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;型号: | 10-PZ074PA030SM-L623F08Y |
厂家: | VINCOTECH |
描述: | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
文件: | 总16页 (文件大小:1491K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
650 V / 30 A
fastPACK 0 H C
Features
flow 0 housing
● High speed H-Bridge
● High efficiency IGBT H5
● Full current fast FWD
● Integrated capacitors
● Thermistor
Schematic
Target applications
● Power Supply
● Solar Inverters
● UPS
● Welding & Cutting
Types
● 10-FZ074PA030SM-L623F08
● 10-PZ074PA030SM-L623F08Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
31
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
60
W
V
±20
175
Maximum Junction Temperature
°C
Copyright Vincotech
1
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
H-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum Junction Temperature
175
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-55…+125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
9,55 / 9,57
> 200
mm
mm
with solder pins / with press-fit pins
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
2
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
H-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0003 25
25
3,3
4
4,7
V
V
1,67
1,80
1,84
2,22
Collector-emitter saturation voltage
VCEsat
15
30
125
150
ICES
IGES
Rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
none
2100
7,7
Cies
Cres
Qg
f = 1MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
30
70
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,57
K/W
Dynamic
25
67
72
68
td(on)
Turn-on delay time
125
150
25
8
tr
Rise time
125
150
25
9
10
71
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
83
88
6
7
±15
350
30
tf
8
0,575
0,645
0,742
0,117
0,280
0,267
Qr
FWD
Qr
FWD
Qr
FWD
= 1,1 μC
= 1,9 μC
= 2,3 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
3
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
H-Bridge Diode
Static
25
1,52
1,46
1,44
1,92
1,6
VF
Ir
Forward voltage
30
125
150
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic
25
18
28
31
IRRM
125
150
25
Peak recovery current
A
92
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
115
125
1,09
1,94
2,27
0,204
0,435
0,485
619
311
272
ns
di/dt = 3056 A/μs
di/dt = 2584 A/μs
di/dt = 2520 A/μs
Recovered charge
±15
350
30
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Capacitor (DC)
Capacitance
C
150
nF
%
%
Tolerance
-10
+10
2,5
Dissipation factor
f = 1 kHz
25
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
4
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,57
K/W
IGBT thermal model values
R (K/W)
τ
(s)
7,66E-02
2,00E-01
6,54E-01
3,77E-01
1,51E-01
1,13E-01
1,73E+00
2,58E-01
5,93E-02
1,31E-02
2,99E-03
3,69E-04
Copyright Vincotech
5
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,92
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
6
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
16
V
V
Ω
Ω
T
j
:
125 °C
150 °C
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
16
V
V
Ω
:
350
±15
30
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
7
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
16
°C
V
150
350
±15
30
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
8
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
25 °C
350
V
V
Ω
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
16
:
Tj
125 °C
150 °C
=
±15
30
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
350
25 °C
At
VCE
=
V
V
Ω
At
VCE
=
V
V
A
25 °C
±15
16
:
Tj
125 °C
150 °C
±15
30
:
125 °C
150 °C
VGE
=
=
VGE
I C
=
Tj
R gon
=
Copyright Vincotech
9
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c
)
di F/dt,di rr/dt = f(R g)
d
iF
/
d
t
t
d
iF
/
d
t
t
t
t
t
dir r/d
i
i
i
i
t
t
t
t
dir r
/dt
i
i
i
i
At
VCE
=
350
±15
16
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
Ω
Tj
=
=
=
16
16
R gon
R goff
Ω
Copyright Vincotech
10
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
T j
Rgon
R goff
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VCE
tEoff
VGE
VGE
VCE
tEon
-15
VGE (0%) =
-15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
30
V
350
30
V
A
A
0,083
0,137
μs
μs
0,072
0,195
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
30
V
350
30
V
VC (100%) =
I C (100%) =
VC (100%) =
I C (100%) =
A
A
0,007
μs
0,009
μs
t f
=
tr =
Copyright Vincotech
11
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
10,55
0,28
0,14
kW
mJ
μs
P on (100%) =
Eon (100%) =
10,55
0,65
0,20
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
30
V
A
-28
0,115
A
μs
t rr
=
Copyright Vincotech
12
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
H-Bridge Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
IF
Qr
tErec
Prec
30
A
10,55
0,43
0,23
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
1,94
0,23
μC
μs
t Qr
=
tErec =
Copyright Vincotech
13
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
1
X
Y
Function
G11
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
2
2,9
S11
DC-1
DC-1
DC+
DC+
S12
3
8,3
4
10,8
19,6
22,1
29,1
32
5
6
7
8
G12
9
33,5
33,5
Ph1
10
Ph1
11
12
13
33,5
33,5
32
7,2
4,7
0
Ph2
Ph2
G14
14
15
16
17
18
19
20
21
22
29,1
22,1
19,6
10,8
8,3
2,9
0
0
0
S14
DC+
0
DC+
0
DC-2
DC-2
S13
0
0
0
G13
0
8
Therm1
Therm2
0
14,5
Copyright Vincotech
14
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T11-T14
D11-D14
30 A
30 A
H-Bridge Switch
H-Bridge Diode
Capacitor (DC)
Thermistor
FWD
650 V
C10, C20
Rt
Capacitor
NTC
630 V
Copyright Vincotech
15
18 Oct 2017 / Revision 2
10-FZ074PA030SM-L623F08
10-PZ074PA030SM-L623F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xZ074PA030SM-L623F08x-D2-14
18 Oct 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
18 Oct 2017 / Revision 2
相关型号:
10-PZ074PA050SM-L624F08Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ074PA075RG-L625F88Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ074PA075SM-L625F08Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07ANA100RG02-LK39L88Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07ANA100RG03-LK39L38Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07BIA030RW-P894E88Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07BIA030SG-P894E38Y
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH
10-PZ07BIA030SM02-P894E58Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07BVA020SM-LD44E08Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07FCA100RG-LQ35L60Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07NBA100SM10-M305L68Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-PZ07NIA075S5-P926F53Y
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
©2020 ICPDF网 联系我们和版权申明