10-PY126PA040MR-L226F28Y [VINCOTECH]
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode;
| 型号： | 10-PY126PA040MR-L226F28Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode |
| 文件： | 总15页 (文件大小：1596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY126PA040MR-L226F28Y
datasheet
flowPACK 1
1200 V / 40 mΩ
Features
flow 1 12 mm housing
● 3x half-bridge
● Thermistor
Schematic
Target applications
● Power Supply
Types
● 10-PY126PA040MR-L226F28Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VDSS
ID
Drain-source voltage
1200
28
V
A
Drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
Peak drain current
tp limited by Tjmax
Tj = Tjmax
137
61
A
Ptot
VGSS
Tjmax
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
W
V
-4/22
175
°C
Copyright Vincotech
1
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
11,89
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
25
39
52
60
50
rDS(on)
125
150
Drain-source on-state resistance
18
20
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0,01
25
25
25
2,7
5,6
±100
10
V
-4/22
0
0
nA
µA
Ω
1200
7
107
22
Qg
QGS
QGD
Ciss
Coss
Crss
Gate to source charge
18
600
800
20
25
25
25
nC
pF
Gate to drain charge
41
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Reverse Diode Static
Diode forward voltage
1337
76
f = 1MHz
0
27
VSD
0
20
3,2
V
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,55
K/W
Copyright Vincotech
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07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Dynamic
25
18
td(on)
Turn-on delay time
125
150
25
18
17
7
tr
td(off)
tf
Rise time
125
150
25
125
150
8
7
57
65
66
9
10
9
0,619
0,649
0,698
0,197
0,219
Rgoff = 4 Ω
Rgon = 4 Ω
ns
Turn-off delay time
Fall time
16/-4
700
32
25
125
150
25
125
150
25
Qr
FWD
Qr
FWD
Qr
FWD
= 0,5 μC
= 0,5 μC
= 0,7 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
Peak recovery current
150
25
0,222
38
IRRM
A
125
150
25
37
45
19
trr
Qr
Reverse recovery time
Recovered charge
125
150
25
125
150
25
125
150
25
21
23
ns
μC
di/dt = 4760 A/μs
di/dt = 4654 A/μs
di/dt = 5136 A/μs
0,464
0,546
0,655
0,096
0,131
0,152
4997
8656
16/-4
700
32
Erec
Reverse recovered energy
mWs
125
(dirf/dt)max
Peak rate of fall of recovery current
A/µs
150
8100
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
= f(
)
VDS
= f(
)
VDS
I D
I D
VGS
:
=
250
18
μs
V
25 °C
125 °C
150 °C
=
=
250
150
μs
°C
tp
tp
=
:
Tj
VGS
Tj
from
-4 V to 20 V in steps of 2 V
VGS
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
I D = f(VGS
)
Z th(j-s)= f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
10-3
10-2
10-1
100
101
tp(s)
102
D =
R th(j-s)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
tp / T
1,55
VDS
=
Tj:
=
K/W
MOSFET thermal model values
(K/W) (s)
R
τ
1,78E-01
4,55E-01
5,31E-01
2,36E-01
1,48E-01
1,04E+00
1,44E-01
4,34E-02
8,88E-03
1,76E-03
Copyright Vincotech
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07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switch Characteristics
figure 5.
MOSFET
Gate voltage vs Gate charge
VGS = f(Q g)
600 V
At
=
20
A
I C
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switching Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I D
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
VDS
VGS
=
=
=
=
700
16/-4
4
V
V
Ω
Ω
T
j
VDS
VGS
I D
=
=
=
700
16/-4
32
V
V
A
Tj:
125 °C
150 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I D
)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
=
=
=
700
16/-4
4
V
V
Ω
Tj:
VDS
VGS
I D
=
=
=
700
16/-4
32
V
V
A
:
Tj
VDS
VGS
R gon
Copyright Vincotech
7
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switching Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(I D
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
Tj =
150
700
16/-4
4
°C
V
Tj =
150
700
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
R gon
R goff
V
VGS
I D
16/-4
32
V
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(I D
)
trr = f(R gon)
t
t
t
t
t
t
t
t
25 °C
25 °C
At
VDS
=
700
16/-4
4
V
V
Ω
At
VDS
=
700
V
V
A
VGS
=
=
:
125 °C
150 °C
VGS
I D
=
=
16/-4
32
:
Tj
125 °C
150 °C
Tj
R gon
Copyright Vincotech
8
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Q r = f(I D
)
Q r = f(R gon
)
Q
Q
Q
Q
Q
Q
Q
Q
At
VDS
=
=
=
700
16/-4
4
V
V
Ω
25 °C
125 °C
150 °C
At
VDS
VGS
I D
=
=
=
700
V
V
A
25 °C
125 °C
150 °C
:
16/-4
32
:
Tj
VGS
Tj
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
I RM = f(I D
)
I RM = f(R gon
)
I
I
I
I
I
I
I
I
At
VDS
VGS
=
=
=
700
16/-4
4
V
V
Ω
25 °C
125 °C
150 °C
At
VDS
VGS
I D
=
=
=
700
V
V
A
25 °C
:
16/-4
32
:
125 °C
150 °C
Tj
Tj
R gon
Copyright Vincotech
9
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of MOSFET turn on gate resistor
di F/dt,di rr/dt =f(I D
)
di F/dt,di rr/dt =f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
dir r/dt
dir r
/dt
t
t
t
t
i
i
i
i
i
i
i
i
25 °C
At
VDS
VGS
=
=
=
700
V
At
VDS
VGS
I D
=
=
=
700
16/-4
32
V
V
A
25 °C
125 °C
150 °C
16/-4
4
V
:
125 °C
150 °C
:
Tj
Tj
R gon
Ω
figure 15.
MOSFET
Reverse bias safe operating area
I D =f(VDS
)
ID MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
10
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
T j
R gon
125 °C
4 Ω
R goff
4 Ω
figure 1.
MOSFET
figure 2.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
ID
tdoff
VDS
VGS
VGS
ID
tEoff
VDS
tEon
VGS (0%) =
-6
V
VGS (0%) =
-6
V
V
V
A
V
V
GS (100%) =
DS (100%) =
16
V
VGS (100%) =
VDS (100%) =
I D (100%) =
16
700
32
V
700
32
I
D (100%) =
A
tdoff
=
0,065
μs
tdon
=
0,018
μs
figure 3.
MOSFET
figure 4.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VDS
ID
VDS
tr
ID
tf
V
A
V
A
VDS (100%) =
I D (100%) =
tf =
700
32
VDS (100%) =
I D (100%) =
700
32
μs
μs
0,010
tr
=
0,008
Copyright Vincotech
11
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Inverter Switching Definitions
figure 7.
FWD
figure 8.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQrr (tQrr
=
integrating time for Qrr)
Qrr
IF
fitted
VF
IF
VF (100%) =
700
32
V
I F (100%) =
32
A
I
I
F (100%) =
A
Q rr (100%) =
0,55
μC
RRM (100%) =
37
A
trr
=
0,021
μs
Copyright Vincotech
12
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
Ordering Code
10-PY126PA040MR-L226F28Y
10-PY126PA040MR-L226F28Y-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
2,7
0
Functions
DC-3
52,2
52,2
45,5
42,5
41,2
38,5
33,1
30,4
25
1
2
DC-3
G15
3
4
12
13
0
S15
5
DC+3
DC+3
DC+2
DC+2
G13
6
0
7
0
8
0
9
10
11
10
22
S13
11
12
13
19,4
16,7
13,7
0
0
0
DC-2
DC-2
DC-1
14
15
16
17
18
19
20
21
22
11
8,7
5,7
0
0
DC-1
G11
12
13
S11
0
DC+1
DC+1
THERM2
THERM1
PH1
0
2,7
15,6
12,6
28,2
28,2
14,3
16,1
0
2,7
PH1
23
24
25
26
27
28
29
30
31
32
5,7
8,7
26,7
25,7
28,2
28,2
25,2
24,2
28,2
28,2
26,7
25,7
S12
G12
PH2
PH2
S14
G14
PH3
PH3
S16
G16
19,4
22,1
23,1
26,1
36,3
39
42
45
Copyright Vincotech
13
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13,
T14, T15, T16
MOSFET
1200 V
40 mΩ
Inverter Switch
Thermistor
NTC
Thermistor
Copyright Vincotech
14
07 Aug. 2018 / Revision 2
10-PY126PA040MR-L226F28Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY126PA040MR-L226F28Y-D2-14
07 Aug. 2018
Product features has been updated
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
15
07 Aug. 2018 / Revision 2
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