10-PY126TA040SH-L827F68Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;型号: | 10-PY126TA040SH-L827F68Y |
厂家: | VINCOTECH |
描述: | Easy paralleling;High speed switching;Low switching losses |
文件: | 总16页 (文件大小:2278K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PY126TA040SH-L827F68Y
datasheet
flowPACK 1
1200 V / 40 A
Features
flow 1 12 mm housing
● High speed IGBT4
● Tandem diodes for improved thermal performance
● Integrated thermal sensor
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PY126TA040SH-L827F68Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
44
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
120
111
±20
10
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1300
34
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
80
A
Tj = Tjmax
88
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
7,9
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0015 25
25
5,3
5,8
6,3
V
V
1,78
1,94
2,24
2,32
2,42
Collector-emitter saturation voltage
VCEsat
15
40
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
5
µA
nA
Ω
20
120
none
2330
150
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
130
15
960
40
185
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,86
K/W
Dynamic
25
62
63
64
Turn-on delay time
td(on)
125
150
25
13
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
15
16
165
217
229
55
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
±15
600
40
tf
63
79
1,170
1,709
1,840
1,463
2,332
Qr
FWD
Qr
FWD
Qr
FWD
= 1,4 μC
= 2,7 μC
= 2,9 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
2,535
Copyright Vincotech
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16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
3,05
2,92
2,86
3,84
2,1
VF
IR
Forward voltage
40
125
150
V
Reverse leakage current
1300
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,08
K/W
Dynamic
25
41
48
50
IRRM
125
150
25
Peak recovery current
A
74
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
126
133
ns
di/dt = 3039 A/μs
di/dt = 3062 A/μs
di/dt = 2575 A/μs
1,442
2,660
2,927
0,500
0,965
1,062
2993
705
±15
600
40
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
751
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
4
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
120
120
VGE
:
7
V
V
V
I
I
8
9
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
90
60
30
0
90
60
30
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
40
I
Z
30
10-1
20
10
0,5
10-2
0,2
0,1
0,05
0,02
0,01
0,005
0
10-3
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
14
VG E (V)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,86
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,40E-01
4,53E-01
1,58E-01
7,22E-02
3,25E-02
7,98E-01
1,20E-01
3,69E-02
8,08E-03
8,12E-04
Copyright Vincotech
5
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
16
1000
240 V
V
I
14
1ms
10µs
100µs
10ms
100
100ms
DC
960 V
12
10
8
10
1
6
4
0,1
2
0
0
0,01
40
80
120
160
200
QG (nC)
1
10
100
1000
10000
VC E (V)
D =
single pulse
80
IC
=
40
A
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
50
300
I
t
250
40
200
150
100
50
30
20
10
0
0
10
12
14
16
18
10
12
14
16
18
20
VG E (V)
VGE (V)
VCE
Tj
=
VCE
Tj
≤
600
150
V
ºC
600
25
V
ºC
≤
≤
Copyright Vincotech
6
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
120
Z
90
60
30
0
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,08
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,47E-02
1,14E-01
4,25E-01
3,22E-01
1,30E-01
4,74E-02
5,62E+00
8,52E-01
1,42E-01
3,69E-02
5,98E-03
7,52E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
5
5
Eon
Eon
E
Eoff
E
4
4
Eoff
Eon
Eon
Eon
3
2
1
0
3
2
1
0
Eoff
Eon
Eoff
Eoff
Eoff
0
20
40
60
25 °C
80
0
10
20
30
25 °C
40
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1,6
2
E
E
Erec
Erec
1,2
1,5
0,8
0,4
0
1
0,5
0
Erec
Erec
Erec
Erec
0
10
20
30
40
0
20
40
60
80
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
600
±15
8
V
V
Ω
600
±15
40
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
8
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
1
1
t
t
td(off )
td(on)
td(off )
0,1
0,1
tf
tf
td(on)
tr
tr
0,01
0,01
0,001
0,001
0
10
20
30
40
0
20
40
60
80
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
600
±15
8
°C
V
Tj =
150
600
±15
40
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
0,2
0,25
trr
trr
trr
trr
t
t
0,2
0,15
trr
0,15
0,1
trr
0,1
0,05
0
0,05
0
0
0
20
40
60
80
10
20
30
25 °C
40
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
600
±15
8
V
V
Ω
600
±15
40
V
V
A
VCE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
9
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
5
4
Q
Qr
Qr
Q
4
3
Qr
Qr
3
2
1
2
1
Qr
Qr
0
0
0
0
20
40
60
25 °C
80
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
600
±15
40
V
V
A
VCE
VGE
=
=
=
Tj:
VCE=
VGE =
I C=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
80
100
I
I
80
IRM
60
IRM
IRM
60
40
20
40
20
IRM
IRM
IRM
0
0
0
0
10
20
30
25 °C
40
Rgo n (Ω)
20
40
60
25 °C
80
IC (A)
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
600
±15
40
V
V
A
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
10
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
15000
6000
diF/dt
diF/
dt
t
t
dirr/dt
dirr
/
dt
i
i
5000
12000
4000
3000
2000
1000
9000
6000
3000
0
0
0
0
10
20
30
25 °C
40
Rg on (Ω)
20
40
60
80
IC (A)
With an inductive load at
25 °C
With an inductive load at
600
±15
8
V
V
Ω
600
±15
40
V
VCE
VGE
=
=
=
Tj:
VCE
VGE
I C
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
90
IC MAX
I
80
70
60
50
40
30
20
10
0
I
I
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj
=
=
=
125
°C
Ω
8
8
R gon
R goff
Ω
Copyright Vincotech
11
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
8 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
40
V
600
40
V
A
A
217
ns
63
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
600
40
V
600
40
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
63
ns
tr
=
15
ns
Copyright Vincotech
12
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
600
40
V
I F (100%) =
Q r (100%) =
40
A
A
2,66
μC
48
A
t rr
=
126
ns
Copyright Vincotech
13
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with Press-fit pins
with thermal paste 12mm housing with Press-fit pins
Ordering Code
10-PY126TA040SH-L827F68Y
10-PY126TA040SH-L827F68Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
0
0
0
0
0
0
0
0
0
Functions
DC-123
52,6
49,9
42,65
39,65
35,15
28,4
24
1
2
DC-123
G15
3
4
S15
5
Therm1
Therm2
G13
6
7
8
21
S13
9
12,2
9,2
G11
10
S11
11
12
13
2,7
0
0
0
0
DC-123
DC-123
DC+123
14,65
14
15
16
17
18
19
20
21
22
2,7
0
14,65
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
DC+123
Ph1
2,7
5,4
9,6
12,6
19,6
22,3
25
Ph1
Ph1
S12
G12
Ph2
Ph2
Ph2
23
24
25
26
27
28
29
30
31
29,7
32,7
39,7
42,7
47,2
49,9
52,6
52,6
49,9
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,65
14,65
S14
G14
S16
G16
Ph3
Ph3
Ph3
DC+123
DC+123
Copyright Vincotech
14
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
40 A
40 A
Inverter Switch
D11, D12, D13, D14,
D15, D16
FWD
NTC
1300 V
Inverter Diode
Thermistor
Rt
Copyright Vincotech
15
16 May. 2019 / Revision 2
10-PY126TA040SH-L827F68Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY126TA040SH-L827F68Y-D2-14
16 May. 2019
Correction of Ic/If values
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
16 May. 2019 / Revision 2
相关型号:
10-PY12B2A040MS-LP25L08Y
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
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