10-PC094PB035ME02-L629F36Y [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-PC094PB035ME02-L629F36Y |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总26页 (文件大小：11073K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PC094PB035ME02-L629F36Y
datasheet
fastPACK 0 SiC
900 V / 33 mΩ
Features
flow 0 12 mm housing
● 900V SiC MOS
● Switching frequency up to 400kHz
● Suitable for hard switching/soft switching
● Increased power density
● NTC
Schematic
Target applications
● Power Supply
● Special Application
● Welding & Cutting
Types
● 10-PC094PB035ME02-L629F36Y
Copyright Vincotech
1
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Switch - Lo side
VDSS
Drain-source voltage
900
40
V
A
ID
Drain current
Tj = Tjmax
Ts = 80 °C
IDM
EAS
Ptot
Peak drain current
tp limited by Tjmax
VDD = 50 V
Tj = Tjmax
180
220
76
A
Avalanche energy, single pulse
Total power dissipation
Gate-source voltage
ID = 44
mJ
W
V
Ts = 80 °C
VGSS
-4 / 15
175
Tjmax
Maximum Junction Temperature
°C
H-Bridge Switch - Hi side
VDSS
Drain-source voltage
900
40
V
A
ID
Drain current
Tj = Tjmax
Ts = 80 °C
IDM
EAS
Ptot
Peak drain current
tp limited by Tjmax
VDD = 50 V
Tj = Tjmax
180
220
76
A
Avalanche energy, single pulse
Total power dissipation
Gate-source voltage
ID = 44
mJ
W
V
Ts = 80 °C
VGSS
-4 / 15
175
Tjmax
Maximum Junction Temperature
°C
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
-55 ... 125
°C
Copyright Vincotech
2
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
9,6
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
3
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
H-Bridge Switch - Lo side
Static
25
34
42
47
39
rDS(on)
Drain-source on-state resistance
15
76
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,005
25
25
25
1,7
2,4
20
3,5
500
200
V
15
0
0
nA
µA
Ω
0
0
2
2,35
60,8
15
Qg
QGS
QGD
Ciss
Coss
Crss
VSD
Gate to source charge
-4/15
400
600
40
25
nC
Gate to drain charge
24
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
1320
120
8
f = 1 Mhz
0
0
0
0
25
25
pF
V
4,8
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,25
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
12,8
12,8
13,6
5,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
5
5
Rgon = 4 Ω
Rgoff = 4 Ω
42,6
42,8
43,4
10,9
11,7
10,8
0,459
0,447
0,471
0,082
0,055
0,048
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
40
tf
125
150
25
ns
QrFWD=0,455 µC
QrFWD=0,875 µC
QrFWD=0,825 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
11 Feb. 2020 / Revision 2
10ꢀPC094PB035ME02ꢀL629F36Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Dynamic
25
54
58
63
IRRM
125
150
25
Peak recovery current
A
15
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
15
15
ns
di/dt = 7344 A/µs
di/dt = 7855 A/µs
di/dt = 8439 A/µs
0,455
0,875
0,825
0,028
0,196
0,106
11049
13683
15876
-5/15
Recovered charge
600
40
µC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
5
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
H-Bridge Switch - Hi side
Static
25
34
42
47
39
rDS(on)
Drain-source on-state resistance
15
76
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,005
25
25
25
1,7
2,4
20
3,5
500
200
V
15
0
0
nA
µA
Ω
0
0
2
2,35
60,8
15
Qg
QGS
QGD
Ciss
Coss
Crss
VSD
Gate to source charge
-4/15
400
600
40
25
nC
Gate to drain charge
24
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
1320
120
8
f = 1 Mhz
0
0
0
0
25
25
pF
V
4,8
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink*
1,25
K/W
*Only valid with pre-applied Vincotech thermal interface material.
Dynamic
25
12,8
12,8
13,6
5,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
5
5
Rgon = 4 Ω
Rgoff = 4 Ω
42,6
42,8
43,4
10,9
11,7
10,8
0,459
0,447
0,471
0,082
0,055
0,048
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
600
40
tf
125
150
25
ns
QrFWD=0,455 µC
QrFWD=0,875 µC
QrFWD=0,825 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
11 Feb. 2020 / Revision 2
10ꢀPC094PB035ME02ꢀL629F36Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Dynamic
25
54
58
63
IRRM
125
150
25
Peak recovery current
A
15
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
15
15
ns
di/dt = 7344 A/µs
di/dt = 7855 A/µs
di/dt = 8439 A/µs
0,455
0,875
0,825
0,028
0,196
0,106
11049
13683
15876
-5/15
Recovered charge
600
40
µC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
7
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
C
Capacitance
94
25
nF
%
%
Tolerance
-20
20
Dissipation factor
f = 1 kHz
25
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
Copyright Vincotech
8
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switch - Lo side Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
150
100
VGS
:
5 V
6 V
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
125
100
75
50
25
0
50
0
-50
-100
-150
0
1
2
3
4
5
6
7
8
9
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGS
Tj =
Tj:
VGS from 5 V to 15 V in steps of 1 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
tp(s)
D =
tp / T
1,247
Rth(j-s)
=
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,45E-02
1,36E-01
4,22E-01
3,45E-01
2,11E-01
6,79E-02
3,56E+00
5,08E-01
9,62E-02
2,46E-02
5,94E-03
1,44E-03
Copyright Vincotech
9
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switch - Lo side Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Gate voltage vs gate charge
VGS = f(Qg)
17,5
15,0
400
12,5
10,0
7,5
5,0
2,5
0,0
-2,5
-5,0
0
10
20
30
40
50
60
70
Qg (µC)
At
ID
=
40
A
Copyright Vincotech
10
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switch - Hi side Characteristics
figure 7.
MOSFET
figure 8.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
150
100
VGS
:
5 V
6 V
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
125
100
75
50
25
0
50
0
-50
-100
-150
0
1
2
3
4
5
6
7
8
9
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGS
Tj =
Tj:
VGS from 5 V to 15 V in steps of 1 V
figure 9.
MOSFET
figure 10.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
tp(s)
D =
tp / T
1,247
Rth(j-s)
=
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,45E-02
1,36E-01
4,22E-01
3,45E-01
2,11E-01
6,79E-02
3,56E+00
5,08E-01
9,62E-02
2,46E-02
5,94E-03
1,44E-03
Copyright Vincotech
11
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switch - Hi side Characteristics
figure 11.
MOSFET
figure 12.
MOSFET
Gate voltage vs gate charge
VGS = f(Qg)
17,5
15,0
12,5
10,0
7,5
400
5,0
2,5
0,0
-2,5
-5,0
0
10
20
30
40
50
60
70
Qg (µC)
At
ID
=
40
A
Copyright Vincotech
12
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Thermistor Characteristics
figure 13.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
13
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Lo side
figure 14.
MOSFET
figure 15.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
40
V
125 °C
150 °C
Tj:
Tj:
VGS
V
A
Rgon
Rgoff
4
figure 16.
MOSFET
figure 17.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
VDS
VGS
ID
=
=
=
600
-5/15
4
V
V
Ω
125 °C
150 °C
600
-5/15
40
V
125 °C
150 °C
Tj:
Tj:
VGS
V
A
Rgon
Copyright Vincotech
14
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Lo side
figure 18.
MOSFET
figure 19.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
-1
10
-1
10
td(off)
td(off)
td(on)
td(on)
tf
tr
-2
10
-2
10
tr
tf
-3
10
-3
0,0
10
0
10
20
30
40
50
60
70
80
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-5/15
4
°C
V
150
600
-5/15
40
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 20.
MOSFET
figure 21.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
4
V
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
-5/15
40
Tj:
Tj:
Rgon
Ω
Copyright Vincotech
15
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Lo side
figure 22.
MOSFET
figure 23.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
4
V
V
Ω
At
600
-5/15
40
V
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
A
Tj:
Tj:
Rgon
figure 24.
MOSFET
figure 25.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-5/15
40
V
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
-5/15
4
V
A
Tj:
Tj:
Rgon
Copyright Vincotech
16
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Lo side
figure 26.
MOSFET
figure 27.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
22500
45000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
20000
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
0
0,0
0
10
20
30
40
50
60
70
80
ID(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
4
V
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
-5/15
40
Tj:
Tj:
Rgon
Ω
figure 28.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
175
ID MAX
150
125
100
75
50
25
0
0
200
400
600
800
1000
V
DS(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
17
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Hi side
figure 29.
MOSFET
figure 30.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
40
V
125 °C
150 °C
Tj:
Tj:
VGS
V
A
Rgon
Rgoff
4
figure 31.
MOSFET
figure 32.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
VDS
VGS
ID
=
=
=
600
-5/15
4
V
V
Ω
125 °C
150 °C
600
-5/15
40
V
125 °C
150 °C
Tj:
Tj:
VGS
V
A
Rgon
Copyright Vincotech
18
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Hi side
figure 33.
MOSFET
figure 34.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
-1
10
-1
10
td(off)
td(off)
td(on)
td(on)
tf
tr
-2
10
-2
10
tr
tf
-3
10
-3
0,0
10
0
10
20
30
40
50
60
70
80
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-5/15
4
°C
V
150
600
-5/15
40
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 35.
MOSFET
figure 36.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
4
V
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
-5/15
40
Tj:
Tj:
Rgon
Ω
Copyright Vincotech
19
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Hi side
figure 37.
MOSFET
figure 38.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
4
V
V
Ω
At
600
-5/15
40
V
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
A
Tj:
Tj:
Rgon
figure 39.
MOSFET
figure 40.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
80
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
-5/15
40
V
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
-5/15
4
V
A
Tj:
Tj:
Rgon
Copyright Vincotech
20
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
H-Bridge Switching Characteristics - Hi side
figure 41.
MOSFET
figure 42.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
22500
45000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
20000
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
0
0,0
0
10
20
30
40
50
60
70
80
ID(A)
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
4
V
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
-5/15
40
Tj:
Tj:
Rgon
Ω
figure 43.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
175
ID MAX
150
125
100
75
50
25
0
0
200
400
600
800
1000
V
DS(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
21
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Switching Definitions
figure 44.
MOSFET
figure 45.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 46.
MOSFET
figure 47.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
22
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Switching Definitions
figure 48.
FWD
figure 49.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 50.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
23
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Ordering Code
Marking
Version
Ordering Code
10-PC094PB035ME02-L629F36Y
10-PC094PB035ME02-L629F36Y-/3/
Without thermal paste
With thermal paste
Name
Date code
UL & VIN
Lot
Serial
Text
Datamatrix
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
TTTTTTTVV
LLLLL
Outline
Pin table [mm]
Pin
1
2
3
4
5
6
7
8
X
0
2,9
8,3
Y
Function
G11
S11
DC-1
DC-1
DC+
DC+
S12
G12
Ph1
Ph1
Ph2
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
0
0
0
0
0
0
0
8
10,8
19,6
22,1
29,1
32
33,5
33,5
33,5
33,5
32
29,1
22,1
19,6
10,8
8,3
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Ph2
G14
S14
DC+
DC+
DC-2
DC-2
S13
G13
Therm1
Therm2
2,9
0
0
0
14,5
Copyright Vincotech
24
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T13
T12, T14
C10, C20
Rt
MOSFET
MOSFET
Capacitor
NTC
900 V
900 V
1000 V
32,5 mΩ
32,5 mΩ
H-Bridge Switch - Lo side
H-Bridge Switch - Hi side
Capacitor (DC)
Thermistor
Copyright Vincotech
25
11 Feb. 2020 / Revision 2
10-PC094PB035ME02-L629F36Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PC094PB035ME02-L629F36Y-D2-14
11 Feb. 2020
Correct output characteristic of H-bridge switch
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
26
11 Feb. 2020 / Revision 2
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