10-FY12B2A036MR-L387L18 [VINCOTECH]
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode;
| 型号： | 10-FY12B2A036MR-L387L18 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode |
| 文件： | 总22页 (文件大小：7289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY12B2A036MR-L387L18
datasheet
flowBOOST 1 dual SiC
1200 V / 36 mΩ
Topology features
flow 1 12 mm housing
● Kelvin Emitter for improved switching performance
● Dual Booster
● Bypass Diode
● Integrated DC capacitor
● Temperature sensor
Component features
● Fast reverse recovery
● High speed SiC-MOSFET technology
● Low on-resistance
Housing features
● Base isolation: Al2O3
Schematic
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Energy Storage Systems
● Solar Inverters
Types
● 10-FY12B2A036MR-L387L18
Copyright Vincotech
1
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VDSS
Drain-source voltage
1200
26
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
84
A
Ptot
Total power dissipation
57
W
-4 / 21
-4 / 23
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
39
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
100
72
A
Single Half Sine Wave,
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
A
Tj = Tjmax
119
175
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
44
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
370
51
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
2
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
ByPass Diode
VRRM
Peak repetitive reverse voltage
1600
44
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
370
51
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Capacitor (DC)
VMAX
Maximum DC voltage
1000
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,6
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
3
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Switch
Static
25
37,9
66,4
76,8
45(1)
rDS(on)
Drain-source on-state resistance
18
21
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
0
0,0111
25
25
25
2,8
3,5
4,8
100
80
V
21
0
0
nA
µA
Ω
1200
1
1
Qg
91
20
24
2335
70
5
QGS
QGD
Ciss
Coss
Crss
VSD
Gate to source charge
0/18
800
21
25
nC
Gate to drain charge
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 1 Mhz
0
0
800
0
25
25
pF
V
21
3,3
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,67
K/W
25
24,99
21,46
20,88
15,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
13,45
12,73
90,79
104,81
108,14
9,18
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/18
700
30
tf
125
150
25
9,1
ns
8,47
QrFWD=0,076 µC
QrFWD=0,086 µC
QrFWD=0,09 µC
0,536
0,444
0,427
0,216
0,232
0,237
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,4
1,72
1,86
20
1,6(1)
400
VF
IR
Forward voltage
20
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
160
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,8
K/W
25
10,79
12,46
13,1
IRM
Peak recovery current
125
150
25
A
11,94
11,5
trr
Reverse recovery time
125
150
25
ns
11,54
0,076
0,086
0,09
di/dt=2333 A/µs
di/dt=2623 A/µs
di/dt=2745 A/µs
Qr
Recovered charge
0/18
700
30
125
150
25
μC
0,011
0,014
0,015
2794,21
3090,02
3344,03
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,1
1,5(1)
VF
IR
Forward voltage
28
125
150
25
1,04
1,03
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,37
K/W
ByPass Diode
Static
25
1,1
1,5(1)
VF
IR
Forward voltage
28
125
150
25
1,04
1,03
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,37
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
47
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
2,5
Copyright Vincotech
6
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
7
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
80
80
VGS
:
-4 V
-2 V
0 V
60
40
14 V
15 V
16 V
17 V
18 V
19 V
20 V
60
40
20
0
20
0
-20
-40
-60
-80
0,0
2,5
5,0
7,5
10,0
12,5
-15
-10
-5
0
5
10
15
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
60
10
50
40
30
20
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,672
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,22E-01
3,62E-01
8,39E-01
2,77E-01
7,32E-02
2,51E+00
2,54E-01
5,37E-02
7,82E-03
8,42E-04
Copyright Vincotech
8
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switch Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
100
22,5
20,0
17,5
15,0
12,5
10,0
7,5
10
1
0,1
0,01
5,0
2,5
0,0
1
10
100
1000
10000
0
20
40
60
80
100
V
DS(V)
Qg(μC)
D =
ID
=
single pulse
21
25
A
Ts =
Tj =
80
15
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
9
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
60
50
40
30
20
10
0
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,8
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,98E-02
9,04E-02
2,65E-01
1,68E-01
1,66E-01
7,14E-02
3,29E+00
5,06E-01
8,56E-02
1,77E-02
4,16E-03
8,53E-04
Copyright Vincotech
10
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Sw. Protection Diode Characteristics
figure 9.
Rectifier
figure 10.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,372
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,28E-02
1,59E-01
6,89E-01
3,22E-01
1,49E-01
6,37E+00
6,68E-01
8,84E-02
1,74E-02
2,00E-03
Copyright Vincotech
11
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
ByPass Diode Characteristics
figure 11.
Rectifier
figure 12.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,372
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,28E-02
1,59E-01
6,89E-01
3,22E-01
1,49E-01
6,37E+00
6,68E-01
8,84E-02
1,74E-02
2,00E-03
Copyright Vincotech
12
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Thermistor Characteristics
figure 13.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
13
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switching Characteristics
figure 14.
MOSFET
figure 15.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
700
0/18
16
V
V
Ω
Ω
125 °C
150 °C
700
0/18
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 16.
FWD
figure 17.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
700
0/18
16
V
V
Ω
125 °C
150 °C
700
0/18
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
14
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switching Characteristics
figure 18.
MOSFET
figure 19.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tr
td(on)
tr
tf
-2
10
-2
10
tf
-3
10
-3
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/18
16
°C
V
150
700
0/18
30
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
0/18
16
V
V
Ω
At
700
V
V
A
25 °C
25 °C
125 °C
150 °C
0/18
30
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
15
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switching Characteristics
figure 22.
FWD
figure 23.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
=
=
=
At
700
V
V
Ω
At
700
0/18
30
V
V
A
25 °C
25 °C
VGS
ID
0/18
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 24.
FWD
figure 25.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
17,5
15,0
12,5
10,0
7,5
30
25
20
15
10
5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
2,5
0,0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
700
V
V
Ω
At
700
0/18
30
V
25 °C
25 °C
0/18
16
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
16
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
6000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
700
V
V
Ω
At
700
0/18
30
V
V
A
25 °C
25 °C
VGS
VGS
ID
0/18
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 28.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
50
ID MAX
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
17
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switching Definitions
figure 29.
MOSFET
figure 30.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 31.
MOSFET
figure 32.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
18
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Boost Switching Definitions
figure 33.
FWD
figure 34.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 35.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
19
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FY12B2A036MR-L387L18
10-FY12B2A036MR-L387L18-/7/
10-FY12B2A036MR-L387L18-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
Function
Boost2
Boost2
52,2
49,2
2
3
not assembled
4
34,7
0
DC+In2
5
not assembled
6
31,7
20,5
17,5
0
0
0
DC+In2
7
DC+In1
DC+In1
8
9
not assembled
not assembled
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
3
0
0
0
Boost1
Boost1
not assembled
0
0
0
0
6
DC+
DC+
DC-
DC-
9
20,5
23,5
not assembled
28,2
8,1
G1
E1
11,1
28,2
not assembled
23,55
28,65
28,2
28,2
NTC1
NTC2
not assembled
41,1
44,1
28,2
E2
28,2
G2
not assembled
52,2
52,2
52,2
52,2
23,5
DC-
DC-
20,5
9
DC+
DC+
6
not assembled
Copyright Vincotech
20
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Pinout
DC+
14,15,30,31
D3
D4
DC+In1
7,8
DC+In2
4,6
D2 -a,-b,-c,-d
-a,-b,-c,-d
D1
C1
C2
Boost1
11,12
Boost2
1,2
T1
T2
D5
D6
G1
G2
E2
19
20
26
25
E1
NTC
DC-
DC-
28,29
16,17
NTC1
22
NTC2
23
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2
D1, D2
D5, D6
D3, D4
C1, C2
Rt
MOSFET
FWD
1200 V
1200 V
1600 V
1600 V
1000 V
36 mΩ
20 A
Boost Switch
Boost Diode
Rectifier
Rectifier
Capacitor
Thermistor
28 A
Boost Sw. Protection Diode
ByPass Diode
28 A
Capacitor (DC)
Thermistor
Copyright Vincotech
21
05 Aug. 2022 / Revision 2
10-FY12B2A036MR-L387L18
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY12B2A036MR-L387L18-D2-14
5 Aug. 2022
Dynamic measurement change
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
05 Aug. 2022 / Revision 2
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