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10-FY07NBA160RV-M506L78 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FY07NBA160RV-M506L78
型号： 10-FY07NBA160RV-M506L78
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
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10-FY07NBA160RV-M506L78  
datasheet  
flowBOOST 1 symmetric  
650 V / 160 A  
Features  
flow 1 12 mm housing  
● High efficient and compact symmetric booster  
● High switching frequency and low inductive design  
● Low losses due to latest IGBT technology  
● Integrated temperature sensor  
 
 
Schematic  
Target applications  
● Solar Inverters  
● UPS  
Types  
● 10-FY07NBA160RV-M506L78  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Boost Switch  
VCES  
IC  
Collector-emitter voltage  
650  
110  
640  
171  
±30  
2
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 25 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 360 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
1
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
102  
300  
127  
175  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
650  
30  
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
Ptot  
60  
A
Tj = Tjmax  
53  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
min. 12,7  
8,44  
mm  
mm  
Clearance  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
5
0,1142 25  
25  
5
6
7
V
V
1,65  
1,69  
1,75  
1,9  
VCEsat  
Collector-emitter saturation voltage  
15  
160  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
20  
µA  
nA  
Ω
30  
25  
400  
none  
9620  
368  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
158  
15  
400  
160  
342  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,56  
K/W  
Dynamic  
25  
54  
51  
51  
Turn-on delay time  
td(on)  
125  
150  
25  
21  
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
24  
23  
171  
183  
186  
33  
Rgon = 4 Ω  
Rgoff = 4 Ω  
ns  
Turn-off delay time  
Fall time  
td(off)  
0 / 15  
400  
160  
tf  
43  
45  
3,48  
5,29  
5,62  
2,76  
3,70  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 4,1 μC  
= 8,3 μC  
= 9,6 μC  
Turn-on energy (per pulse)  
Eon  
mWs  
125  
Eoff  
Turn-off energy (per pulse)  
150  
3,91  
Copyright Vincotech  
3
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Diode  
Static  
25  
125  
150  
1,53  
1,49  
1,47  
1,92  
7,6  
Forward voltage  
VF  
IR  
150  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,75  
K/W  
Dynamic  
25  
70  
103  
110  
IRRM  
125  
150  
25  
Peak recovery current  
A
76  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
104  
116  
ns  
di/dt = 5969 A/μs  
di/dt = 5231 A/μs 0 / 15  
di/dt = 5177 A/μs  
4,07  
8,28  
9,65  
0,976  
1,93  
2,29  
5263  
5407  
4815  
400  
160  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Boost Sw. Protection Diode  
Static  
25  
150  
1,64  
1,56  
1,87  
0,36  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
30  
V
650  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,80  
K/W  
Copyright Vincotech  
4
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1486 Ω  
-12  
+14  
200  
2
mW  
mW/K  
K
B(25/50) Tol. ±3%  
B(25/100) Tol. ±3%  
3950  
3998  
B-value  
K
Vincotech NTC Reference  
B
Copyright Vincotech  
5
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE  
)
500  
500  
VGE  
:
7
8
9
V
V
V
I
I
I
I
I
I
I
I
400  
300  
200  
100  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
400  
300  
200  
100  
0
0
0
1
2
3
4
5
0
1
2
3
4
VC E (V)  
VC E (V)  
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
=
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(t p)  
100  
160  
I
I
I
I
Z
Z
Z
Z
120  
80  
10-1  
10-2  
10-3  
0,5  
0,2  
0,1  
40  
0,05  
0,02  
0,01  
0,005  
0
0
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
0
2
4
6
8
10  
VG E (V)  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
0,56  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
3,72E-02  
7,76E-02  
1,95E-01  
1,82E-01  
4,71E-02  
1,64E-02  
4,49E+00  
1,06E+00  
1,62E-01  
4,81E-02  
7,51E-03  
7,15E-04  
Copyright Vincotech  
6
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
1000  
1ms  
10µs  
100µs  
10ms  
I
I
I
I
100ms  
DC  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
VC E (V)  
D =  
single pulse  
80 ºC  
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
7
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Z th(j-s) = f(tp)  
100  
500  
400  
300  
200  
100  
0
Z
Z
Z
Z
10-1  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
5
VF (V)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
0,75  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
2,88E-02  
7,02E-02  
1,95E-01  
2,65E-01  
1,21E-01  
3,39E-02  
3,36E-02  
7,46E+00  
1,27E+00  
2,04E-01  
6,33E-02  
1,27E-02  
3,05E-03  
3,74E-04  
Copyright Vincotech  
8
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Sw. Protection Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,80  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
5,88E-02  
1,26E-01  
5,91E-01  
5,13E-01  
2,57E-01  
1,01E-01  
1,52E-01  
5,09E+00  
6,40E-01  
8,94E-02  
2,64E-02  
6,46E-03  
1,53E-03  
2,46E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical NTC characteristic  
Thermistor  
as a function of temperature  
R = f(T)  
NTC-typical temperature characteristic  
25000  
20000  
15000  
10000  
5000  
0
25  
50  
75  
100  
125  
T (°C)  
Copyright Vincotech  
9
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
16  
12  
E
E
E
E
E
E
E
E
Eon  
Eon  
Eon  
Eon  
12  
8
9
6
3
0
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
4
0
0
50  
100  
150  
200  
250  
300  
350  
IC (A)  
0
2
4
6
8
10  
12  
25 °C  
14  
16  
Rg (Ω)  
18  
With an inductive load at  
25 °C  
With an inductive load at  
VCE  
VGE  
=
=
=
=
400  
0 / 15  
4
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
400  
0 / 15  
160  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
3
3
Erec  
Erec  
E
E
E
E
E
E
E
E
2,5  
2
2,5  
2
Erec  
Erec  
1,5  
1
1,5  
1
Erec  
Erec  
0,5  
0
0,5  
0
0
2
4
6
8
10  
12  
14  
16  
18  
0
50  
100  
150  
200  
250  
300  
350  
IC (A)  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
400  
0 / 15  
4
V
V
Ω
400  
0 / 15  
160  
V
V
A
VCE  
VGE  
=
=
=
Tj:  
VCE  
VGE  
I C  
=
=
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
10  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
td(off )  
t
t
t
t
t
t
t
t
td(off )  
0,1  
0,1  
td(on)  
tr  
td(on)  
tf  
tf  
0,01  
0,01  
tr  
0,001  
0,001  
0
2
4
6
8
10  
12  
14  
16  
18  
0
50  
100  
150  
200  
250  
300  
350  
Rg (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
150  
400  
0 / 15  
4
°C  
V
150  
400  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
0 / 15  
160  
V
Ω
Ω
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
0,16  
0,16  
trr  
trr  
t
t
t
t
t
t
t
t
trr  
trr  
0,12  
0,08  
0,04  
0
0,12  
0,08  
0,04  
0
trr  
trr  
0
50  
400  
100  
150  
200  
250  
300  
350  
0
2
4
6
8
10  
12  
25 °C  
14  
16  
18  
IC (A)  
Rg on (Ω)  
At  
VCE  
=
V
V
Ω
At  
VCE  
=
400  
V
V
A
25 °C  
VGE  
R gon  
=
=
0 / 15  
4
Tj:  
VGE  
I C  
=
0 / 15  
160  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
Copyright Vincotech  
11  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
15  
12  
Q
Q
Q
Q
Q
Q
Q
Q
Qr  
Qr  
12  
9
9
6
3
0
Qr  
Qr  
6
Qr  
Qr  
3
0
0
50  
100  
150  
200  
250  
300  
350  
0
2
4
6
8
10  
12  
14  
16  
18  
Rg on (Ω)  
IC (A)  
400  
V
V
Ω
400  
V
V
A
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
25 °C  
25 °C  
0 / 15  
4
0 / 15  
160  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
120  
160  
IRM  
IRM  
I
I
I I  
I I  
I
I
90  
60  
30  
0
120  
80  
40  
0
IRM  
IRM  
IRM  
IRM  
0
2
4
6
8
10  
12  
25 °C  
14  
16  
18  
Rgo n (Ω)  
0
50  
100  
150  
200  
250  
300  
350  
IC (A)  
400  
V
V
Ω
400  
V
V
A
At  
VCE  
=
At  
VCE =  
25 °C  
0 / 15  
4
0 / 15  
160  
VGE  
=
=
Tj:  
VGE  
I C  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
12  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
dirr/dt  
d
iF  
/
/
dt  
dt  
t
t
t t  
t t  
t
t
dirr  
i
i
i i  
i i  
i
i
At  
VCE  
=
400  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
400  
0 / 15  
160  
V
V
A
25 °C  
125 °C  
150 °C  
0 / 15  
4
:
Tj  
:
Tj  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
150  
°C  
Ω
4
4
R gon  
R goff  
Ω
Copyright Vincotech  
13  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
4 Ω  
4 Ω  
T j  
Rgon  
R goff  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t
(µs)  
t (µs)  
VGE (0%) =  
0
V
VGE (0%) =  
0
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
400  
160  
183  
V
400  
160  
51  
V
A
A
ns  
ns  
t doff  
=
tdon  
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t
(µs)  
t
(µs)  
VC (100%) =  
I C (100%) =  
t f =  
400  
160  
43  
V
VC (100%) =  
I C (100%) =  
400  
160  
24  
V
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
14  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Boost Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr  
=
integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t
(µs)  
t
(µs)  
400  
160  
103  
104  
V
160  
A
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
I F (100%) =  
Q r (100%) =  
A
8,28  
μC  
A
ns  
t rr  
=
Copyright Vincotech  
15  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Ordering Code & Marking  
Version  
Ordering Code  
without thermal paste 12 mm housing with solder pins  
10-FY07NBA160RV-M506L78  
Name  
Date code  
WWYY  
Serial  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
X
0
Y
Function  
N2  
2,8  
1
2
0
5,4  
N2  
3
0
8
N2  
4
0
10,6  
17,6  
20,2  
22,8  
25,4  
28,2  
28,2  
28,2  
28,2  
28,2  
28,2  
20,5  
20,5  
17,9  
17,9  
10,4  
N2  
5
0
N1  
6
0
N1  
7
0
N1  
8
0
N1  
9
16,6  
19,2  
21,8  
24,4  
44,2  
52,2  
49,6  
52,2  
49,6  
52,2  
49,6  
DC-Boost  
DC-Boost  
DC-Boost  
DC-Boost  
Therm1  
Therm2  
Boost-  
Boost-  
Boost-  
Boost-  
Boost+  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
52,2  
49,6  
52,2  
10,4  
7,8  
Boost+  
Boost+  
Boost+  
7,8  
23  
24  
25  
26  
27  
28  
29  
30  
24,4  
21,8  
19,2  
16,6  
21,8  
21,8  
8,4  
0
0
DC+Boost  
DC+Boost  
DC+Boost  
DC+Boost  
S25  
0
0
18,3  
15,5  
12,7  
9,9  
G25  
G27  
S27  
8,4  
Copyright Vincotech  
16  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Pinout  
Identification  
ID  
Component  
MOSFET  
FWD  
Voltage  
650 V  
Current  
Function  
Comment  
T25, T27  
D25, D27  
D45, D47  
Rt  
160 A  
150 A  
30 A  
Boost Switch  
Boost Diode  
650 V  
FWD  
650 V  
Boost Sw. Protection Diode  
Thermistor  
NTC  
Copyright Vincotech  
17  
18 May. 2018 / Revision 1  
10-FY07NBA160RV-M506L78  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-FY07NBA160RV-M506L78-D1-14  
18 May. 2018  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
18  
18 May. 2018 / Revision 1  

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