10-FY07ZAA055F7-L513B78 [VINCOTECH]
Extremly low losses;Improved reverse diode commutation ruggedness;Ultra-fast body diode;
| 型号： | 10-FY07ZAA055F7-L513B78 |
| 厂家： | 
VINCOTECH |
| 描述： | Extremly low losses;Improved reverse diode commutation ruggedness;Ultra-fast body diode |
| 文件： | 总30页 (文件大小：8811K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07ZAA055F7-L513B78
datasheet
flowRPI 1
600 V / 46 mΩ
Topology features
flow 1 12 mm housing
● Kelvin Emitter for improved switching performance
● Open Emitter configuration
● Rectifier + Dual Booster + H-Bridge
● Temperature sensor
Component features
● Extremly low losses
● Improved reverse diode commutation ruggedness
● Ultra-fast body diode
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Charging Stations
● Welding & Cutting
Types
● 10-FY07ZAA055F7-L513B78
Copyright Vincotech
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14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Switch
VDSS
Drain-source voltage
600
16
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
IDM
tp limited by Tjmax
VDD = 50 V
100
105
0,53
80
A
EAS
Avalanche energy, single pulse
Avalanche energy, repetitive
MOSFET dv/dt ruggedness
Total power dissipation
Gate-source voltage
ID = 5,1 A
ID = 5,1 A
Ts = 25 °C
Ts = 80 °C
mJ
mJ
V/ns
W
EAR
dv/dt
Ptot
VDD = 50 V
VDS= 0..400 V
Tj = Tjmax
48
VGSS
dv/dt
Tjmax
±20
50
V
Reverse diode dv/dt
V/ns
°C
Maximum Junction Temperature
150
PFC Diode
VRRM
Peak repetitive reverse voltage
650
14
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
I2t
tp limited by Tjmax
45,9
70
A
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
24,5
30
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
15
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
A
Ptot
36
W
°C
Tjmax
Maximum junction temperature
175
Inverter Switch
VDSS
Drain-source voltage
600
25
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
IDM
tp limited by Tjmax
VDD = 50 V
VDD = 50 V
VDS= 0..400 V
Tj = Tjmax
153
180
0,9
120
63
A
EAS
Avalanche energy, single pulse
Avalanche energy, repetitive
MOSFET dv/dt ruggedness
Total power dissipation
Gate-source voltage
ID = 6,7 A
ID = 6,7 A
Ts = 25 °C
Ts = 80 °C
mJ
mJ
V/ns
W
EAR
dv/dt
Ptot
VGSS
dv/dt
Tjmax
±20
70
V
Reverse diode dv/dt
V/ns
°C
Maximum Junction Temperature
150
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
53
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
400
800
60
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
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14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
7,58
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
25
94,4
168
99(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
10,5
mΩ
V
125
VDS = VGS
0,00053 25
3
3,5
4
100
1
20
0
0
25
25
nA
µA
Ω
600
5,9
45
Qg
0/10
0
400
400
10,5
0
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
1952
33
f = 250 kHz
pF
Coss
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,47
K/W
25
41,13
38,75
8,28
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
9,25
Rgon = 16 Ω
Rgoff = 16 Ω
137,53
152,14
17,45
18,03
0,053
0,064
0,097
0,105
td(off)
Turn-off delay time
Fall time
ns
125
25
0/10
400
15
tf
ns
125
25
QrFWD=0,112 µC
QrFWD=0,107 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,56
1,75
1,83
1,7(1)
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
10
60
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
3,12
K/W
25
11,56
10,69
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
15,59
trr
ns
125
25
16,33
0,112
di/dt=2261 A/µs
di/dt=1800 A/µs
Qr
0/10
400
15
μC
125
25
0,107
0,037
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
0,035
1670,13
1567,25
(dirf/dt)max
125
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,72
1,58
1,54
1,87(1)
VF
IR
Forward voltage
6
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
0,1
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,65
K/W
Copyright Vincotech
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14 Oct. 2022 / Revision 1
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Switch
Static
25
49,7
89,5
55(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
10
0
18
mΩ
V
125
VDS = VGS
0,0009
25
25
25
3,5
4
4,5
100
1
20
0
0
nA
µA
Ω
600
5,8
79
Qg
Gate charge
VDD = 400 V
f = 250 kHz
0/10
0
12,4
0
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
3194
62
400
pF
Coss
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,11
K/W
25
461,74
433,8
56,57
65,91
127,81
139
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
td(off)
tf
125
25
Rgon = 120 Ω
Rgoff = 16 Ω
Turn-off delay time
Fall time
ns
125
25
8,15
ns
125
25
7,83
QrFWD=1,11 µC
QrFWD=2,15 µC
0,865
1,37
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
mWs
mWs
A
125
25
0,063
0,066
23,83
32,86
85,01
123,67
1,11
Eoff
-5/10
350
15
125
25
IRRM
125
25
trr
ns
125
25
di/dt=296 A/µs
di/dt=277 A/µs
Qr
μC
125
25
2,15
0,073
0,13
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
4006,45
4365,28
(dirf/dt)max
125
Copyright Vincotech
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14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,09
1,03
1,02
1,5(1)
VF
IR
Forward voltage
35
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
2000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,18
K/W
Thermistor
Static
R
Rated resistance
Deviation of R25
25
22
kΩ
%
R25 = 22 kΩ
25
-5
5
ΔR/R
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
100
-12
14
P
d
200
2
mW
mW/K
K
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
PFC Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
30
30
25
20
15
10
5
VGS
:
-4 V
-2 V
0 V
25
20
15
10
5
2 V
4 V
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
-5
-10
-15
-20
-25
-30
0
0
1
2
3
4
5
6
7
8
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
V
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,469
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,02E-01
3,83E-01
6,43E-01
2,21E-01
1,22E-01
1,98E+00
1,58E-01
4,63E-02
6,10E-03
7,22E-04
Copyright Vincotech
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14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
PFC Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
10
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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14 Oct. 2022 / Revision 1
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datasheet
PFC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-2
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
3,118
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,23E-01
7,72E-01
9,48E-01
8,15E-01
4,59E-01
1,64E+00
1,09E-01
2,05E-02
3,30E-03
4,35E-04
Copyright Vincotech
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datasheet
PFC Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,646
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,02E-01
3,50E-01
9,53E-01
7,66E-01
4,76E-01
2,56E+00
1,72E-01
3,96E-02
5,83E-03
9,87E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 10.
MOSFET
figure 11.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
40
40
VGS
:
-4 V
-2 V
0 V
30
20
2 V
30
20
10
4 V
6 V
8 V
10
10 V
12 V
14 V
16 V
18 V
20 V
0
-10
-20
-30
-40
0
0
1
2
3
4
5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
V
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 12.
MOSFET
figure 13.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
20,0
10
17,5
15,0
12,5
10,0
7,5
0
10
-1
10
0,5
0,2
-2
5,0
10
0,1
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,106
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
7,52E-02
1,86E-01
6,08E-01
1,63E-01
7,34E-02
1,94E+00
3,22E-01
7,08E-02
9,85E-03
9,16E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 14.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
10
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,175
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,14E-02
1,33E-01
5,37E-01
3,38E-01
1,26E-01
6,95E+00
9,25E-01
1,26E-01
2,82E-02
2,80E-03
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
PFC Switching Characteristics
figure 18.
MOSFET
figure 19.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
16
V
V
Ω
Ω
125 °C
400
0/10
15
V
V
A
125 °C
Rgon
Rgoff
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
16
V
V
Ω
125 °C
400
0/10
15
V
V
A
125 °C
Rgon
Copyright Vincotech
18
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
PFC Switching Characteristics
figure 22.
MOSFET
figure 23.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
td(on)
tr
tf
tf
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/10
16
°C
V
125
400
0/10
15
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
16
V
V
Ω
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
0/10
15
125 °C
Rgon
Copyright Vincotech
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14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
PFC Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
400
V
V
Ω
At
400
0/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
0/10
16
125 °C
125 °C
Rgon
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
15,0
12,5
10,0
7,5
25
20
15
10
5
IRM
IRM
5,0
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/10
15
V
25 °C
25 °C
Tj:
Tj:
0/10
16
125 °C
V
A
125 °C
Rgon
Copyright Vincotech
20
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
PFC Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
3000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
400
V
V
Ω
At
400
0/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
0/10
16
125 °C
125 °C
Rgon
figure 32.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
25
ID MAX
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
21
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Inverter Switching Characteristics
figure 33.
MOSFET
figure 34.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
1,75
1,50
1,25
1,00
0,75
0,50
0,25
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0,00
0
5
10
15
20
25
30
0
25
50
75
100
125
150
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
350
-5/10
120
16
V
V
Ω
Ω
125 °C
350
-5/10
15
V
V
A
125 °C
Rgon
Rgoff
figure 35.
MOSFET
figure 36.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
350
-5/10
120
V
V
Ω
125 °C
350
-5/10
15
V
V
A
125 °C
Rgon
Copyright Vincotech
22
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Inverter Switching Characteristics
figure 37.
MOSFET
figure 38.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(on)
td(on)
td(off)
td(off)
tr
-1
10
-1
10
tr
tf
-2
10
-2
10
tf
-3
10
-3
10
0
5
10
15
20
25
30
0
25
50
75
100
125
150
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
-5/10
120
16
°C
V
125
350
-5/10
15
°C
V
VDS
=
=
=
=
VDS
=
=
=
VGS
Rgon
Rgoff
VGS
ID
V
V
Ω
Ω
A
figure 39.
MOSFET
figure 40.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
350
V
V
Ω
At
350
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
-5/10
120
125 °C
-5/10
15
125 °C
Rgon
Copyright Vincotech
23
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Inverter Switching Characteristics
figure 41.
MOSFET
figure 42.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
25
50
75
100
125
150
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-5/10
120
V
V
Ω
At
350
-5/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
125 °C
Rgon
figure 43.
MOSFET
figure 44.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
45
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-5/10
120
V
V
Ω
At
350
-5/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
125 °C
Rgon
Copyright Vincotech
24
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Inverter Switching Characteristics
figure 45.
MOSFET
figure 46.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
ID(A)
0
25
50
75
100
125
150
R
gon(Ω)
VDS
=
=
=
VDS
=
=
=
At
350
V
V
Ω
At
350
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
-5/10
120
125 °C
-5/10
15
125 °C
Rgon
figure 47.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
40
ID MAX
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
120
16
°C
Ω
Rgon
Rgoff
=
=
Ω
Copyright Vincotech
25
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Switching Definitions
figure 48.
MOSFET
figure 49.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
MOSFET
figure 51.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
26
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 54.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
E
rec
tErec
P
rec
t (µs)
Copyright Vincotech
27
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FY07ZAA055F7-L513B78
10-FY07ZAA055F7-L513B78-/7/
10-FY07ZAA055F7-L513B78-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G13
52,9
49,9
41,9
39,2
36,2
33,2
22
0
2
0
S13
3
0
Ph2
4
0
Ph2
5
0
S14
6
0
G14
7
0
PFC+
8
22
3,5
0
PFC+
9
13,4
10,7
2,7
DC+Rect
DC+Rect
DC-Rect
DC-Rect
ACIn1
ACIn1
ACIn2
ACIn2
Therm1
Therm2
S25
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
0
0
0
0
0
13
0
15,7
23,7
26,4
28,8
28,8
28,8
28,8
28,8
28,8
28,8
28,8
28,8
28,8
28,8
28,8
15,9
12,9
12,9
15,9
14,4
14,4
9,2
9,2
17,4
17
0
0
7,7
10,7
14,6
17,6
20,6
23,6
33,2
36,2
39,2
41,9
49,9
52,9
49,8
49,8
52,9
52,9
41,8
39,1
29,2
15
G25
G27
S27
G12
S12
Ph1
Ph1
S11
G11
DC-Inv1
DC-Inv2
DC-Inv2
DC-Inv1
DC+Inv
DC+Inv
PFC2-
PFC1-
PFC2in2
PFC1in2
PFC2in1
PFC1in1
25
16,5
25
20,9
20,5
17
Copyright Vincotech
28
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Pinout
DC+Inv
33,34
DC+Rect
9,10
PFC+
7,8
D25
D27
PFC2in2
PFC1in2
38
37
T12
T14
D32
D34
6
23
24
G12
S12
G14
S14
5
Ph1
25,26
ACIn1
13,14
PFC2in1
39
PFC1in1
40
Ph2
ACIn2
15,16
3,4
T11
T13
T25
D31
D33
T27
21
D47
D45
28
27
1
20
19
G11
S11
G13
S13
G25
S25
G27
S27
22
2
Rt
DC-Rect
11,12
PFC1-
36
PFC2-
35
DC-Inv1
29,32
DC-Inv2
30,31
Therm2
18
Therm1
17
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14
MOSFET
MOSFET
FWD
600 V
600 V
650 V
650 V
1600 V
46 mΩ
77 mΩ
10 A
Inverter Switch
PFC Switch
T25, T27
D25, D27
PFC Diode
D45, D47
FWD
6 A
PFC Sw. Protection Diode
Rectifier Diode
D31, D32, D33, D34
Rt
Rectifier
Thermistor
35 A
Thermistor
Copyright Vincotech
29
14 Oct. 2022 / Revision 1
10-FY07ZAA055F7-L513B78
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY07ZAA055F7-L513B78-D1-14
14 Oct. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
14 Oct. 2022 / Revision 1
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