10-0B06PPA010RC01-L025A19

datasheet

flow PIM 0B + PFC

Features

600 V / 10 A

flow 0 B housing

● Converter, PFC, inverter in one housing

● New high speed IGBT for PFC

● One screw heatsink mounting

Target applications

Schematic

● Embedded drives

Types

● 10-0B06PPA010RC01-L025A19

Maximum Ratings

Tj=25°C, unless otherwise specified

Inverter Switch

Copyright Vincotech

1

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switch

PFC Diode

PFC Switch Protection Diode

Rectifier Diode

Copyright Vincotech

2

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Characteristic Values

Inverter Switch

Copyright Vincotech

3

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switch

Copyright Vincotech

4

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Diode

PFC Protection Diode

Copyright Vincotech

5

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Rectifier Diode

Thermistor

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

100

25

22

kΩ

%

R₁₀₀= 1484 Ω

-5

5

mW

mW/K

K

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech NTC Reference

I

Module Properties

Copyright Vincotech

6

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switch Characteristics

Typical output characteristics

IGBT

Typical output characteristics

IGBT

I_C= f(V_CE

)

I_C= f(V_CE)

35

45

40

35

30

25

20

15

10

5

30

25

20

15

10

5

0

0,5

1

1,5

2

2,5

3

3,5

4

4,5

5

1

2

3

4

5

V_CE(V)

t_p

=

250

15

μs

25 °C

125 °C

150 °C

t_p

=

250

150

7 V to 17 V in steps of 1 V

μs

V_GE

=

V

T_j:

T_j=

°C

V_GEfrom

Typical transfer characteristics

IGBT

Transient thermal impedance as a function of pulse width

IGBT

I_C= f(V_CE

)

Z _thJH= f(t_p)

10

8

6

4

2

1

0.5

0,1

0.2

0.1

0.05

0.02

0.01

0.005

0

0,01

1,00E-04

0

1,00E-03

1,00E-02

1,00E-01

1,00E+00

1,00E+01

1,00E+02

2

4

6

8

10

12

t_p(s)

V_CE(V)

t_p

=

100

10

μs

25 °C

125 °C

150 °C

D =

R _thJH

t_p/ T

V_CE

=

V

T_j:

=

2,15

K/W

IGBT thermal model values

R (K/W) Tau (s)

7,60E-02

1,59E-01

1,01E+00

6,48E-01

2,57E-01

2,82E+00

4,19E-01

6,63E-02

2,63E-02

3,72E-03

Copyright Vincotech

7

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switch Characteristics

Gate voltage vs Gate charge

IGBT

V_GE= f(Q _g)

16

480V

14

12

10

8

120V

6

4

2

0

10

20

30

40

50

60

70

80

Qg (nC)

At

I_C=

10

A

Short circuit withstand time as a function of V_GE

IGBT

Typical short circuit collector current as a function of V_GE

IGBT

t_sc= f(V_GE

)

I_SC= f(V_GE)

10

160

9

8

7

6

5

4

3

2

1

140

120

100

80

60

40

20

0

12

13

14

15

16

17

18

19

20

12

13

14

15

16

17

V_GE(V)

At

V_CE

=

V_CE

≤

400

150

V

400

25

V

T_j

≤

ºC

T_j

≤

ºC

Copyright Vincotech

8

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switch Characteristics

Typical output characteristics

IGBT

Typical output characteristics

IGBT

I_C= f(V_CE

)

I_C= f(V_CE)

90

I

75

60

45

30

15

60

45

30

15

0

1

2

3

4

5

1

2

3

4

5

V_{C E}(V)

t_p

=

250

15

μs

25 °C

125 °C

150 °C

t_p

T_j=

V_GEfrom

=

250

125

μs

°C

T

:

V_GE

=

V

7 V to 17 V in steps of 1 V

Typical transfer characteristics

IGBT

Transient Thermal Impedance as function of Pulse duration

IGBT

I_C= f(V_GE

)

Z _th(j-s)= f(t_p)

10¹

30

I

25

Z

10⁰

20

15

10

5

0,5

0,2

0,1

10^-1

0,05

0,02

0,01

0,005

0

10^-2

10^-4

0

10^-3

10^-2

10^-1

10

10¹

t_p(s)

10²

2

4

6

8

V_{G E}(V)

t_p

=

100

10

μs

25 °C

125 °C

150 °C

D =

R _th(j-s)

t_p/ T

1,74

T :

V_CE

=

V

=

K/W

IGBT thermal model values

R _th(K/W)

τ (s)

1,29E-01

7,29E-01

6,55E-01

1,29E-01

9,92E-02

5,83E-01

6,38E-02

2,28E-02

2,24E-03

3,38E-04

Copyright Vincotech

9

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switch Characteristics

Gate voltage vs Gate charge

IGBT

V_GE= f(Q_G

)

15

130V

V

12,5

520V

10

7,5

5

2,5

0

10

20

30

40

50

60

70

80

Q_G(nC)

At

I_C=

30

A

PFC Diode Characteristics

Typical forward characteristics

FWD

Transient thermal impedance as a function of pulse width

FWD

I_F= f(V_F)

Z

thJH

= f(t_p)

10

24

20

16

12

8

1

D = 0,5

0,2

0,1

0,05

0,02

0,01

4

0,005

0.000

0

0,01

0

0,5

1

1,5

2

2,5

3

3,5

4

4,5

V_F(V)

5

1,00E-04 1,00E-03 1,00E-02 1,00E-01 1,00E+00 1,00E+01 1,00E+02

t_p(s)

250

μs

25 °C

125 °C

150 °C

D =

R_thJH

t_p

=

t_p/ T

2,80

T_j:

K/W

=

FWD thermal model values

R (K/W)

Tau (s)

5,38E-02

3,99E+00

5,17E-01

5,71E-02

1,18E-02

2,38E-03

1,47E-01

1,06E+00

8,73E-01

6,63E-01

Copyright Vincotech

10

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Protection Diode characteristics

Typical forward characteristics

FWD

Transient thermal impedance as a function of pulse width

FWD

I_F= f(V_F)

Z _th(j-s)= f(t_p)

10¹

18

15

12

9

Z

10⁰

D = 0,5

10^-1

0,2

6

0,1

0,05

0,02

0,01

0,005

0.000

3

10^-2

0

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

0

0,5

1

1,5

2

2,5

3

V_F(V)

t_p(s)

t_p

=

250

μs

25 °C

125 °C

150 °C

T _j:

D =

R _th(j-s)

t_p/ T

3,01

=

K/W

FWD thermal model values

R (K/W)

τ (s)

5,15E-02

9,53E-02

3,22E-01

1,35E+00

8,32E-01

3,58E-01

9,38E+00

8,91E-01

1,25E-01

2,97E-02

8,19E-03

1,78E-03

Copyright Vincotech

11

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Rectifier characteristics

Typical forward characteristics

Rectifier Diode

Transient thermal impedance as a function of pulse width

Rectifier Diode

I_F= f(V_F)

Z _th(j-s)= f(t_p)

10¹

21

18

15

12

9

Z

10⁰

D = 0,5

10^-1

0,2

0,1

6

0,05

0,02

0,01

0,005

0.000

3

10^-2

0

10^-4

=

10^-3

10^-2

10^-1

10⁰

10¹

10²

t_p(s)

0

0,5

1

1,5

2

2,5

3

V_F(V)

t_p

=

250

μs

25 °C

125 °C

150 °C

D =

t_p/ T

2,09

T _j:

R _th(j-s)

K/W

Diode thermal model values

R (K/W)

τ(s)

4,86E-02

1,45E-01

1,18E+00

5,40E-01

1,74E-01

1,03E+01

6,91E-01

6,09E-02

1,88E-02

1,96E-03

Thermistor Characteristics

figure 1.

Thermistor

Typical Thermistor resistance values

Typical NTC characteristic as a function of temperature

as a function of temperature

R = f(T)

NTC-typical temperature characteristic

25000

20000

15000

10000

5000

0

25

50

75

100

125

T (°C)

Copyright Vincotech

12

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

Figure 1.

IGBT

Figure 2.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C

)

E = f(R _G)

0,8

E_on

0,6

0,4

0,2

0,6

0,4

0,2

E_on

E_off

Eoff

E_off

0

5

10

15

20

32

64

96

128

160

R_G(W)

I_C(A)

25 °C

125 °C

150 °C

With an inductive load at

25 °C

125 °C

150 °C

With an inductive load at

V_CE

V_GE

=

400

±15

32

V

Ω

T_j:

V_CE

V_GE

I_C

=

400

±15

10

V

A

T_j:

R _gon

R _goff

32

Figure 3.

FWD

Figure 4.

Typical reverse recovery energy loss as a function of gate resistor

FWD

Typical reverse recovery energy loss as a function of collector current

E_rec= f(I_c)

E_rec= f(R _G)

0,4

0,3

0,2

0,1

0

E_rec

0,3

0,2

0,1

E_rec

0

32

64

96

128

160

0

5

10

15

20

I_C(A)

R_G(W)

With an inductive load at

25 °C

125 °C

150 °C

With an inductive load at

25 °C

125 °C

150 °C

V_CE

V_GE

=

400

±15

32

V

Ω

T_j:

V_CE=

V_GE=

I_C=

400

±15

10

V

A

T_j:

R _gon

Copyright Vincotech

13

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

Figure 5.

IGBT

Figure 6.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C

)

t = f(R _G)

1

t_doff

t_don

t_doff

t_don

t_r

0,1

t_r

t_f

0,01

0,001

0

0,001

0

32

64

96

128

160

5

10

15

20

R_G(Ω)

With an inductive load at

T_j

V_CE

=

125

400

±15

32

°C

V

T_j

V_CE

V_GE

I_C

=

125

400

±15

10

°C

V

V_GE

V

R _gon

R _goff

Ω

A

32

Figure 7.

Typical reverse recovery time as a function of collector current

FWD

Figure 8.

Typical reverse recovery time as a function of IGBT turn on gate resistor

t _rr= f(R _gon

FWD

t _rr= f(I _C

)

0,32

0,4

0,3

0,2

0,1

0

t_rr

0,24

0,16

0,08

t_rr

0

5

10

15

20

0

32

400

64

96

128

160

R_Gon(Ω)

I_C(A)

At

V_CE

V_GE

R _gon

=

400

±15

32

V

Ω

25 °C

125 °C

150 °C

At

V_CE

V_GE

I_C

=

V

A

25 °C

125 °C

150 °C

=

T_j:

=

±15

T_j:

=

10

Copyright Vincotech

14

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

Figure 9.

FWD

Figure 10.

FWD

Typical reverse recovery charge as a function of collector current

Typical reverse recovery charge as a function of IGBT turn on gate resistor

Q_rr= f(I_C

)

Q_rr= f(R _gon)

1,6

1,2

Q_rr

1,2

0,8

0,4

0

0,9

0,6

0,3

Q_rr

0

At

0

5

10

15

20

32

64

96

128

160

R_Gon(Ω)

I_C(A)

At

V_CE

=

400

±15

32

V

Ω

25 °C

125 °C

150 °C

At

V_CE

V_GE

I_C

=

400

±15

10

V

A

25 °C

125 °C

150 °C

V_GE

=

T_j:

=

T_j:

R _gon

=

Figure 11.

FWD

Figure 12.

Typical reverse recovery current as a function of IGBT turn on gate resistor

FWD

Typical reverse recovery current as a function of collector current

I_RRM= f(I_C

)

I_RRM= f(R _gon)

12

20

I_RRM

9

6

3

15

10

5

I_RRM

0

32

64

96

128

160

5

10

15

20

R_Gon(Ω)

I_C(A)

At

V_CE

V_GE

R _gon

=

400

±15

32

V

Ω

25 °C

125 °C

150 °C

At

V_CE

=

400

±15

10

V

A

25 °C

125 °C

150 °C

=

T_j:

V_GE

=

T_j:

=

I_C

Copyright Vincotech

15

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

Figure 13.

FWD

Figure 14.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of

IGBT turn on gate resistor

dI₀/dt,dI_rec/dt = f(I_c)

2000

600

dI₀/dt

dI_rec/dt

dI₀/dt

dI_rec/dt

1500

1000

500

0

450

300

150

0

32

64

96

128

160

R_Gon(Ω)

0

5

10

15

20

I_C(A)

At

V_CE

=

400

±15

32

V

Ω

At

V_CE

V_GE

I_C

=

400

±15

10

V

A

V_GE

=

R _gon

=

Figure 15.

Reverse bias safe operating area

IGBT

I_C= f(V_CE

)

25

I_{C MAX}

20

15

10

5

0

100

200

300

400

500

600

700

V_CE(V)

At

T_j

R _gon

R _goff

=

175

°C

Ω

32

Ω

Copyright Vincotech

16

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

General conditions

T _j

=

125 °C

R_gon

R_goff

32 Ω

Figure 1.

IGBT

Figure 2.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_Eoff= integrating time for E_off)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

125

200

t_doff

%

I_C

%

V_CE

100

150

100

V_GE90%

V_CE90%

75

50

25

0

V_GE

I_C

t_don

V_GE

t_Eoff

V_CE

50

0

I_{C 1%}

V_CE3%

V_GE10%

I_{C 10%}

t_Eon

-25

-0,2

-50

2,85

-0,1

0

0,1

0,2

0,3

time (us)

2,93

3,01

3,09

3,17

3,25

time(us)

V_GE(0%) =

-15

V

A

V_GE(0%) =

-15

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

15

V_GE(100%) =

V_C(100%) =

I_C(100%) =

15

V

400

10

400

10

V

A

t_doff

t_Eoff

=

0,105

0,292

μs

t_don

t_Eon

=

0,071

0,215

μs

Figure 3.

IGBT

Figure 4.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

200

125

%

I_C

fitted

%

V_CE

I_C

100

150

I_{C 90%}

75

50

25

0

V_CE

100

I_{C 90%}

I_{C 60%}

I_{C 40%}

t_r

50

I_{C 10%}

I_C10%

0

t_f

-25

-0,05

-50

0

0,05

0,1

0,15

3

3,05

3,1

3,15

3,2

time (us)

time(us)

V_C(100%) =

I_C(100%) =

400

10

V

V_C(100%) =

I_C(100%) =

400

10

V

A

t_f

=

0,035

μs

t_r

=

0,022

μs

Copyright Vincotech

17

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

Figure 5.

IGBT

Figure 6.

IGBT

Turn-off Switching Waveforms & definition of t_Eoff

Turn-on Switching Waveforms & definition of t_Eon

125

200

%

P_on

%

I_{C 1%}

P_off

E_off

100

150

100

50

75

50

E_on

25

V_CE3%

V_GE90%

V_GE10%

0

t_Eoff

t_Eon

-25

-50

-0,2

-0,1

0

0,1

0,2

0,3

2,9

2,95

3

3,05

3,1

3,15

3,2

3,25

time(us)

time (us)

P_off(100%) =

E_off(100%) =

4,00

0,18

0,29

kW

mJ

μs

P_on(100%) =

E_on(100%) =

4,00

kW

mJ

μs

0,36

0,21

t_Eoff

=

t_Eon=

Figure 7.

FWD

Turn-off Switching Waveforms & definition of t_rr

150

%

I_d

100

t_rr

50

V_d

0

I_RRM10%

fitted

-50

I_{RRM 90%}

I_RRM100%

-100

-150

3

3,05

3,1

3,15

3,2

3,25

3,3

3,35

time(us)

3,4

V_d(100%) =

I_d(100%) =

I_RRM(100%) =

400

10

V

A

-10

A

t_rr

=

0,233

μs

Copyright Vincotech

18

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Inverter Switching Definitions

Figure 8.

FWD

Figure 9.

FWD

Turn-on Switching Waveforms & definition of t_Qrr(t_Qrr= integrating time for Q_rr)

Turn-on Switching Waveforms & definition of t_Erec(t_Erec= integrating time for E_rec)

125

150

%

E_rec

Q_rr

I_d

100

t_Erec

75

t_Qrr

50

25

0

-50

P_rec

0

-100

-25

2,9

3,1

3,3

3,5

3,7

3,9

4,1

time(us)

4,3

2,9

3,1

3,3

3,5

3,7

3,9

4,1

time(us)

4,3

I_d(100%) =

Q_rr(100%) =

10

A

P_rec(100%) =

E_rec(100%) =

4,00

0,24

1,00

kW

mJ

μs

0,89

1,00

μC

μs

t_{Q rr}

=

t_Erec=

Copyright Vincotech

19

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

Figure 1.

IGBT

Figure 2.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C

)

E = f(R _G)

0,25

0,2

E_on

0,2

0,15

0,1

0,16

0,12

0,08

0,04

Eoff

E_off

0,05

0

5

10

15

20

16

32

48

64

80

R_G(W)

I_C(A)

25 °C

125 °C

150 °C

With an inductive load at

25 °C

125 °C

150 °C

With an inductive load at

V_CE

V_GE

=

400

15/0

16

V

Ω

T_j:

V_CE

V_GE

I_C

=

400

15/0

10

V

A

T_j:

R _gon

R _goff

16

Figure 3.

FWD

Figure 4.

Typical reverse recovery energy loss as a function of gate resistor

FWD

Typical reverse recovery energy loss as a function of collector current

E_rec= f(I_c)

E_rec= f(R _G)

0,015

0,012

0,009

0,006

0,003

0

E_rec

0,012

0,009

0,006

0,003

E_rec

0

16

32

48

64

80

0

5

10

15

20

I_C(A)

R_G(W)

With an inductive load at

25 °C

125 °C

150 °C

With an inductive load at

25 °C

125 °C

150 °C

V_CE

V_GE

=

400

15/0

16

V

Ω

T_j:

V_CE=

V_GE=

I_C=

400

15/0

10

V

A

T_j:

R _gon

Copyright Vincotech

20

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

Figure 5.

IGBT

Figure 6.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C

)

t = f(R _G)

1

t_doff

0,1

t_don

t_r

t_don

t_r

t_f

0,01

t_f

0,001

0

0,001

0

16

32

48

64

80

5

10

15

20

R_G(Ω)

I_C(A)

With an inductive load at

T_j

V_CE

=

125

400

15/0

16

°C

V

T_j

V_CE

V_GE

I_C

=

125

400

15/0

10

°C

V

V_GE

V

R _gon

R _goff

Ω

A

16

Figure 7.

Typical reverse recovery time as a function of collector current

FWD

Figure 8.

Typical reverse recovery time as a function of IGBT turn on gate resistor

t _rr= f(R _gon

FWD

t _rr= f(I _C

)

0,02

0,025

0,02

0,015

0,01

0,005

0

t_rr

0,016

0,012

0,008

0,004

t_rr

0

5

10

15

20

0

16

32

48

64

80

R_Gon(Ω)

I_C(A)

At

V_CE

=

400

15/0

16

V

Ω

25 °C

125 °C

150 °C

At

V_CE

V_GE

I_C

=

400

15/0

10

V

A

25 °C

125 °C

150 °C

V_GE

R _gon

T_j:

=

T_j:

Copyright Vincotech

21

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

Figure 9.

FWD

Figure 10.

FWD

Typical reverse recovery charge as a function of collector current

Typical reverse recovery charge as a function of IGBT turn on gate resistor

Q_rr= f(I_C

)

Q_rr= f(R _gon)

0,08

0,06

0,04

0,02

0

0,06

0,04

0,02

Q_rr

0

At

0

5

10

15

20

16

400

32

48

64

80

R_Gon(Ω)

I_C(A)

At

V_CE

=

400

15/0

16

V

Ω

25 °C

125 °C

150 °C

At

V_CE

V_GE

I_C

=

V

A

25 °C

125 °C

150 °C

V_GE

=

T_j:

=

15/0

10

T_j:

R _gon

=

Figure 11.

FWD

Figure 12.

Typical reverse recovery current as a function of IGBT turn on gate resistor

FWD

Typical reverse recovery current as a function of collector current

I_RRM= f(I_C

)

I_RRM= f(R _gon)

8

16

6

4

2

12

8

I_RRM

4

I_RRM

0

16

32

48

64

80

5

10

15

20

R_Gon(Ω)

I_C(A)

At

V_CE

V_GE

R _gon

=

400

15/0

16

V

Ω

25 °C

125 °C

150 °C

At

V_CE

=

400

15/0

10

V

A

25 °C

125 °C

150 °C

=

T_j:

V_GE

=

T_j:

=

I_C

Copyright Vincotech

22

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

Figure 13.

FWD

Figure 14.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of

IGBT turn on gate resistor

dI₀/dt,dI_rec/dt = f(I_c)

10000

2000

dI₀/dt

dI_rec/dt

dI₀/dt

dI_rec/dt

8000

6000

4000

2000

0

1500

1000

500

0

16

32

48

64

80

R_Gon(Ω)

0

5

10

15

20

I_C(A)

At

V_CE

=

400

15/0

16

V

Ω

At

V_CE

V_GE

I_C

=

400

V

A

V_GE

=

15/0

10

R _gon

=

Figure 15.

Reverse bias safe operating area

IGBT

I_C= f(V_CE

)

25

I_{C MAX}

20

15

10

5

0

100

200

300

400

500

600

700

V_CE(V)

At

T_j

R _gon

R _goff

=

175

°C

Ω

16

Ω

Copyright Vincotech

23

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

General conditions

T _j

=

125 °C

R_gon

R_goff

16 Ω

Figure 1.

IGBT

Figure 2.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_Eoff= integrating time for E_off)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

150

%

I_C

t_doff

V_CE

100

50

V_CE90%

V_GE90%

100

V_GE

I_C

t_Eoff

V_CE

I_{C 1%}

t_don

0

50

-50

-100

-150

V_CE3%

V_GE10%

I_{C 10%}

V_GE

0

t_Eon

-50

2,95

-0,15

-0,05

0,05

0,15

0,25

time (us)

3

3,05

3,1

3,15

time(us)

V_GE(0%) =

0

V

V_GE(0%) =

0

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

15

V

V_GE(100%) =

V_C(100%) =

I_C(100%) =

15

V

400

10

V

400

V

A

10

A

t_doff

t_{E off}

=

0,192

0,218

μs

t_don

t_{E on}

=

0,020

0,070

μs

Figure 3.

IGBT

Figure 4.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

150

125

%

I_C

fitted

%

V_CE

I_C

125

100

V_CE

I_{C 90%}

100

75

50

25

0

I_{C 90%}

I_{C 60%}

I_{C 40%}

75

t_r

50

25

I_C10%

t_f

I_{C 10%}

-25

0

-50

0,08

-25

2,975

0,11

0,14

0,17

0,2

3

3,025

3,05

3,075

time (us)

time(us)

V_C(100%) =

I_C(100%) =

400

10

V

V_C(100%) =

I_C(100%) =

400

10

V

A

t_f

=

0,002

μs

t_r

=

0,008

μs

Copyright Vincotech

24

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

Figure 5.

IGBT

Figure 6.

IGBT

Turn-off Switching Waveforms & definition of t_Eoff

Turn-on Switching Waveforms & definition of t_Eon

150

%

E_off

P_on

E_on

100

50

I_{C 1%}

P_off

V_GE90%

V_CE3%

V_GE10%

0

t_Eon

t_Eoff

-50

-0,1

0

0,1

0,2

0,3

2,95

2,98

3,01

3,04

3,07

3,1

time(us)

time (us)

P_off(100%) =

E_off(100%) =

4,01

0,06

0,22

kW

mJ

μs

P_on(100%) =

E_on(100%) =

4,01

0,08

0,07

kW

mJ

μs

t_{E off}

=

t_{E on}=

Figure 7.

FWD

Turn-off Switching Waveforms & definition of t_rr

150

%

I_d

100

t_rr

50

fitted

V_d

0

-50

I_RRM10%

I_RRM

90%

I_RRM100%

-100

-150

3

3,015

3,03

3,045

3,06

3,075

time(us)

V_d(100%) =

I_d(100%) =

I_RRM(100%) =

400

10

V

A

-3

A

t_rr

=

0,016

μs

Copyright Vincotech

25

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

PFC Switching Definitions

Figure 8.

FWD

Figure 9.

FWD

Turn-on Switching Waveforms & definition of t_Qrr(t_Qrr= integrating time for Q_rr)

Turn-on Switching Waveforms & definition of t_Erec(t_Erec= integrating time for E_rec)

200

150

%

I_d

150

Q_rr

E_rec

100

t_Erec

t_Qrr

50

P_rec

0

-50

2,98

-50

2,98

3,01

3,04

3,07

3,1

3,01

3,04

3,07

3,1

time(us)

I_d(100%) =

Q_rr(100%) =

10

A

P_rec(100%) =

E_rec(100%) =

4,01

0,01

0,03

kW

mJ

μs

0,04

0,03

μC

μs

t_{Q rr}

=

t_{E rec}=

Copyright Vincotech

26

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Ordering Code & Marking

Version

Ordering Code

in DataMatrix as

in packaging barcode as

without thermal paste 17mm housing

10-0B06PPA010RC01-L025A19

L025A19

Name

Text

Date code

WWYY

UL & Vinco

UL Vinco

Lot

LLLLL

Serial

SSSS

NN-NNNNNNNNNNNNNN

TTTTTTT WWYY UL

Vinco LLLLL SSSS

NN-NNNNNNNNNNNNNN-TTTTTTT

Type

Lot number

Serial

SSSS

Date code

WWYY

Datamatrix

TTTT-TTT

LLLLL

Outline

Pin table [mm]

X

Y

Function

1

2

24,7

21,7

18,7

15

12

9

0

3

DC-Rect

DC-PFC

G27

3

4

DC-3

G15

5

6

DC-2

G13

7

6

8

3

DC-1

G11

9

0

10

0

Therm2

11

12

0

5,8

10,8

Therm1

G12

13

14

15

16

17

18

19

20

21

22

0

13,8

10,8

9,3

Ph1

G14

5,7

8,7

Ph2

14,4

19,7

22,9

27,9

23,05

Ph3

G16

DC+

PFC

13,8

6,95

ACIn1

ACIn2

6,95 DC+Rect

Copyright Vincotech

27

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Copyright Vincotech

28

23 Mar. 2021 / Revision 4

10-0B06PPA010RC01-L025A19

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 160

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow 0 B packages see vincotech.com website.

Package data

Package data for flow 0 B packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

10-0B06PPA010RC01-L025A19-D4-14

23 Mar. 2021

Update Thermistor

6, 12

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

29

23 Mar. 2021 / Revision 4


型号：	10-0B06PPA010RC01-L025A19
厂家：	VINCOTECH
描述：	Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管
文件：	总29页 (文件大小：5766K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10-0B06PPA010RC01-L025A19 [VINCOTECH]

相关型号：

10-0B06PPA010RC02-L025A89

10-0B06PRA004RC-L022C09

10-0B166BA028SC-M989G09

10-1

10-1%-FA4-20PPM-TANDR

10-1-208/KIT

10-10

10-10-1021

10-10-1023

10-10-1031

10-10-1033

10-10-1034