10-0B06PRA004RC-L022C09 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 10-0B06PRA004RC-L022C09 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总17页 (文件大小：4177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-0B06PRA004RC-L022C09
datasheet
flow PIM 0B
600 V / 4 A
Features
flow 0 B housing
● IGBT in TRENCHSTOP RC technology
● Open emitter topology
● New ultra-compact housing
● Single-screw heat sink mounting
Target applications
Schematic
● Embedded drives
● Industrial Drives
Types
● 10-0B06PRA004RC-L022C09
Maximum Ratings
Tj=25°C, unless otherwise specified
Inverter Switch
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23 Mar. 2021 / Revision 3
10-0B06PRA004RC-L022C09
datasheet
Rectifier Diode
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23 Mar. 2021 / Revision 3
10-0B06PRA004RC-L022C09
datasheet
Characteristic Values
Inverter Switch
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10-0B06PRA004RC-L022C09
datasheet
Rectifier Diode
Thermistor
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
100
25
25
25
25
22
kΩ
%
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Module Properties
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datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
IGBT
I C = f(VCE
)
I C = f(VCE)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
Typical transfer characteristics
IGBT
Transient thermal impedance as a function of pulse w
IGBT
I C = f(VCE
)
Z thJH = f(tp)
tp(s)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R thJH
tp / T
VCE
=
V
Tj:
=
2,60
K/W
IGBT thermal model values
R (K/W) Tau (s)
7,48E-02
1,91E-01
1,40E+00
4,54E-01
4,75E-01
2,66E+00
2,47E-01
4,11E-02
1,27E-02
2,92E-03
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10-0B06PRA004RC-L022C09
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
IGBT
VGE = f(Q G
)
I C = f(VCE)
V
I
At
At
D =
single pulse
80 ºC
I C=
4
A
Ts
VGE
Tj
=
=
±15
V
=
Tjmax
ºC
Short circuit duration as a function of V GE
IGBT
Typical short circuit current as a function of V GE
IGBT
tpSC = f(VGE
)
I SC = f(VGE)
t
I
V
At
At
VCE
=
400
VCE
≤
400
V
Start at Tj ≤ 150
ºC
Start at Tj ≤25
ºC
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datasheet
Rectifier characteristics
Typical forward characteristics
Rectifier Diode
Transient thermal impedance as a function of pulse width
Rectifier Diode
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
2,09
T j:
R th(j-s)
K/W
Diode thermal model values
R (K/W)
τ(s)
4,86E-02
1,45E-01
1,18E+00
5,40E-01
1,74E-01
1,03E+01
6,91E-01
6,09E-02
1,88E-02
1,96E-03
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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datasheet
Inverter Switching Definitions
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E
= f(I C
)
E
= f(R G)
Eoff
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
V CE
V GE
=
=
=
=
400
±15
64
V
V
Ω
Ω
T j:
V CE
V GE
I C
=
=
=
400
±15
4
V
V
A
T j:
125 °C
150 °C
R gon
R goff
64
Figure 3.
Typical reverse recovery energy loss as a function of collector current
FWD
Figure 4.
Typical reverse recovery energy loss as a function of gate resistor
FWD
E rec = f(I c
)
E rec = f(R G)
25 °C
With an inductive load at
25 °C
125 °C
150 °C
With an inductive load at
V CE
V GE
R gon
=
=
=
400
±15
64
V
V
Ω
T j:
V CE
V GE
I C
=
=
=
400
±15
4
V
V
A
T j:
125 °C
150 °C
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datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t
= f(I C
)
t
= f(R G)
With an inductive load at
With an inductive load at
T j
V CE
V GE
R gon
R goff
=
=
=
=
=
125
400
±15
64
°C
V
T j
V CE
V GE
I C
=
=
=
=
125
400
±15
4
°C
V
V
V
Ω
Ω
A
64
Figure 7.
Typical reverse recovery time as a function of collector current
FWD
Figure 8.
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(R gon
FWD
t rr = f(I C
)
)
At
V CE
=
400
±15
64
V
V
Ω
25 °C
125 °C
150 °C
At
V CE
V GE
I C
=
400
±15
4
V
V
A
25 °C
V GE
=
=
T j:
=
=
T j:
125 °C
R gon
150 °C
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datasheet
Inverter Switching Definitions
Figure 9.
FWD
Figure 10.
FWD
Typical reverse recovery charge as a function of collector current
Typical reverse recovery charge as a function of IGBT turn on gate resistor
Qrr = f(I C
)
Qrr = f(R gon)
At
V CE
=
400
±15
64
V
V
Ω
25 °C
125 °C
150 °C
At
V CE
=
400
±15
4
V
V
A
25 °C
V GE
=
=
T j:
V GE
I C
=
=
T j:
125 °C
R gon
150 °C
Figure 11.
Typical reverse recovery current as a function of collector current
FWD
Figure 12.
Typical reverse recovery current as a function of IGBT turn on gate resistor
I RRM = f(R gon
FWD
I RRM = f(I C
)
)
At
V CE
=
400
±15
64
V
V
Ω
25 °C
125 °C
150 °C
At
V CE
V GE
I C
=
400
±15
4
V
V
A
25 °C
V GE
=
=
T j:
=
=
T j:
125 °C
R gon
150 °C
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23 Mar. 2021 / Revision 3
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datasheet
Inverter Switching Definitions
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of
IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I c
)
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
At
V CE
=
400
V
V
Ω
At
V CE
=
400
±15
4
V
V
A
V GE
=
=
±15
V GE
I C
=
=
R gon
64
Figure 15.
Reverse bias safe operating area
IGBT
I C = f(V CE
)
IC MAX
At
T j
=
=
=
175
°C
Ω
R gon
R goff
64
64,015
Ω
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datasheet
Inverter Switching Definitions
General conditions
Tj
=
=
=
125 °C
R gon
R goff
64 Ω
64 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
VCE
IC
VGE
IC
VCE
VGE
tEoff
tEon
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
400
4
V
400
4
V
A
A
t doff
=
=
0,098
0,293
μs
μs
t don
=
=
0,081
0,220
μs
μs
t E off
t E on
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
VCE
tr
tf
V C (100%) =
I C (100%) =
400
V
V C (100%) =
I C (100%) =
400
V
4
A
4
A
t f
=
0,047
μs
t r
=
0,018
μs
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datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
P off (100%) =
E off (100%) =
1,59
0,08
0,29
kW
mJ
μs
P on (100%) =
E on (100%) =
1,59
0,16
0,22
kW
mJ
μs
t E off
=
t E on =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
V d (100%) =
I d (100%) =
I RRM (100%) =
400
V
4
A
-4
A
t rr
=
0,219
μs
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datasheet
Inverter Switching Definitions
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Id
Qrr
tErec
Prec
I d (100%) =
Qrr (100%) =
4
A
P rec (100%) =
E rec (100%) =
1,59
kW
mJ
μs
0,38
0,44
μC
μs
0,10
0,44
t Qrr
=
t E rec =
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datasheet
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 17mm housing
10-0B06PRA004RC-L022C09
L022C09
L022C09
Name
Date code
WWYY
UL & Vinco
UL Vinco
Lot
LLLLL
Serial
SSSS
NN-NNNNNNNNNNNNNN
TTTTTTT WWYY UL
Vinco LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTT
Type
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTT-TTT
LLLLL
Outline
Pin table [mm]
Pin
X
Y
0
Function
DC-Rect
1
2
24,7
not assembled
not assembled
3
4
15
0
0
0
0
0
0
3
DC-3
5
12
9
G15
DC-2
G13
6
7
6
8
3
DC-1
G11
9
0
10
0
Therm2
11
12
0
0
5,8
10,8
Therm1
G12
13
14
15
16
17
18
19
20
21
22
0
13,8
13,8
13,8
13,8
10,8
9,3
Ph1
G14
Ph2
Ph3
G16
DC+
5,7
8,7
14,4
14,4
19,7
not assembled
27,9
13,8
6,95
ACIn1
ACIn2
27,9
23,05
6,95 DC+Rect
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datasheet
Pinout
Identification
ID
T11-T16
D31-D34
Rt
Component
IGBT
Voltage
600V
1600V
-
Technology
Comment
Current
Function
Inverter switch
4A
Rectifier Diode
Thermistor
Diode
7A
-
NTC
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 160
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 B packages see vincotech.com website.
Package data
Package data for flow 0 B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-0B06PRA004RC-L022C09-D3-14
23 Mar. 2021
Update Thermistor
4, 7
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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