UT20N03 [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UT20N03 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT20N03
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) = 20mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
*Pb-free plating product number: UT20N03L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
UT20N03-TN3-R
UT20N03-TN3-T
UT20N03L-TN3-R
UT20N03L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-139.B
UT20N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
30
V
V
±20
Continuous Drain Current
20
A
Pulsed Drain Current (Note 1)
IDM
120
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
15
Avalanche Energy
mJ
EAR
6
6
Peak Diode Recovery (Note 3)
Power Dissipation
dv/dt
PD
KV/µs
W
℃
60
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
℃
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
1.7
MAX
100
2.5
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0 V, ID =250µA
30
V
VDS =30V,VGS =0V
1
µA
nA
IGSS
VDS =0 V, VGS = ±20V
±100
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID =25 µA
VGS=4.5V, ID =15A
VGS=10V, ID =15A
1.2
1.6
2
V
22.9
15.5
31
20
Drain-Source On-State Resistance
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
530
200
60
700
275
90
VDS =25 V, VGS =0V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
6.2
11
9.3
17
VGS=10V,VDD=15V, RG=12.7Ω,
ID=15A
ns
Turn-Off Delay Time
Turn-Off Fall-Time
23
24
18
27
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
QG
2.5
6.4
8.4
3.1
9.6
11
V
DD=15V,ID=15A
nC
Gate Charge Total
VDD=15V,ID=15A, VGS=0~5V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
VGS=0V,IF=30A
1.1
1.4
30
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
120
Reverse Recovery Time
tRR
15
2
18
3
ns
VR=15V,IF=IS, dIF/dt=100A/µs
Reverse Recovery Charge
QRR
nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. ID = 15A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. IS=30A, VDS=24V, di/dt=200A/μs, TJ(MAX)=175℃
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-139.B
www.unisonic.com.tw
UT20N03
Power MOSFET
TYPICAL CHARACTERISTICS
Gate Charge
Transfer Characteristics
ID=f(VGS
DS≥2×ID×RDS(ON)max
60
55
16
14
12
)
VGS=f(QGate
)
V
ID=15A Pulse
50
45
40
35
30
25
tp=80μs
0.2 VDS max
10
8
0.5 VDS max
0.8 VDS max
6
4
20
15
10
2
0
5
0
0
2
4
6
8
10 12 14 16 18 20 21
2
4
0
1
3
5
5.5
Gate Charge, QG (nC)
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-139.B
www.unisonic.com.tw
UT20N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-139.B
www.unisonic.com.tw
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