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UG25N45_15 [UTC]

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR;
UG25N45_15
型号： UG25N45_15
厂家： Unisonic Technologies    Unisonic Technologies
描述：

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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UNISONIC TECHNOLOGIES CO., LTD  
UG25N45  
Preliminary  
NPN SILICON TRANSISTOR  
N-CHANNEL INSULATED  
GATE BIPOLAR TRANSISTOR  
„
DESCRIPTION  
UTC UG25N45 is an N-channel NPN transistor. It can be used  
in strobe flash applications  
„
FEATURES  
* Very high input impedance  
* Very high pick current capability  
* Gate drive: 4.5V  
„
SYMBOL  
Lead-free:  
UG25N45L  
Halogen-free: UG25N45G  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220  
Packing  
Tube  
Normal  
Lead Free  
Halogen Free  
1
2
3
UG25N45-TA3-T  
UG25N45L-TA3-T  
UG25N45G-TA3-T  
G
C
E
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R203-037.a  
UG25N45  
Preliminary  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCEO  
VGEO  
IGEP  
RATINGS  
450  
UNIT  
V
Collector-Emitter Voltage  
Gate-Emitter Voltage  
±6  
V
Pulsed Gate-Emitter Current  
Pulsed Collector Current  
Power Dissipation @ TC=25°C  
Junction Temperature  
±8  
A
ICP  
150  
A
PD  
2.5  
W
°C  
°C  
°C  
TJ  
+150  
Operating Temperature  
Storage Temperature  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
50  
UNIT  
℃/W  
Junction-to-Ambient  
θJA  
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Saturation Voltage  
Collector-Emitter Leakage Current  
Gate-Emitter Leakage Current  
ON CHARACTERISTICS  
Gate Threshold Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VCE(SAT)  
ICES  
VGE=4.5V, ICP=150A (Pulsed)  
VCE=450V, VGE=0 V  
6
8
V
10  
10  
uA  
IGES  
VGE=±6V, VCE=0V  
V
VGE(TH)  
VCE=VGE, IC=250uA  
0.35  
1.2  
pF  
pF  
pF  
CIES  
COES  
CRES  
2227  
200  
79  
Output Capacitance  
VGE=0V, VCE=25V, f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
ns  
ns  
11.5  
24.5  
150  
3.3  
64.5  
7
Turn-On Rise Time  
VCC=225V, IC =50A, RG=25Ω,  
VGE=10V  
Turn-Off Delay Time  
ns  
Turn-Off Fall Time  
ns  
nC  
nC  
nC  
Total Gate Charge  
Gate-Emitter Charge  
QG  
VCE=360V, VGE=4.5V, IC=50A  
QGE  
QGC  
Gate-Collector Charge  
30  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
www.unisonic.com.tw  
QW-R203-037.a  
UG25N45  
Preliminary  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Application Test Circuit  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R203-037.a  
www.unisonic.com.tw  

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