UG2A-E3/51 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, MINIATURE, PLASTIC, DO-15, 2 PIN;型号: | UG2A-E3/51 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, MINIATURE, PLASTIC, DO-15, 2 PIN 功效 二极管 |
文件: | 总4页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UG2A thru UG2D
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Soft recovery characteristics
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
DO-204AC (DO-15)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
MAJOR RATINGS AND CHARACTERISTICS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
IF(AV)
VRRM
IFSM
trr
2.0 A
50 V to 200 V
80 A
15 ns
MECHANICAL DATA
Case: DO-204AC (DO-15)
Epoxy meets UL 94V-0 flammability rating
VF
0.95 V
Tj max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
UG2A
50
UG2B
100
70
UG2C
150
UG2D
200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
V
V
V
VRMS
35
105
140
Maximum DC blocking voltage
VDC
50
100
150
200
Maximum average forward rectified current at 0.375" (9.5 mm)
lead length at TL = 75 °C (see Fig. 1)
IF(AV)
2.0
80
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88761
16-May-06
www.vishay.com
1
UG2A thru UG2D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage (1) at IF = 2.0 A
VF
0.95
V
Maximum DC reverse current at rated DC
blocking voltage
T
A = 25 °C
5.0
200
IR
trr
trr
µA
ns
ns
TA = 100 °C
Maximum reverse recovery time
Typical reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
at IF = 2.0 A, VR = 30 V, di/dt = 50 A/µs, TJ = 25 °C
15
25
35
Irr = 10 % IRM
TJ = 100 °C
IF = 2.0 A, VR = 30 V, di/dt = 50 A/µs,
Irr = 10 % IRM
TJ = 25 °C
TJ = 100 °C
10
22
Typical stored charge
QRR
CJ
nC
pF
Typical junction capacitance
at 4 V, 1 MHz
15
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
UG2A
UG2B
UG2C
UG2D
UNIT
Typical thermal resistance (1)
RθJA
45
°C/W
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
UG2D-E3/54
0.404
54
73
4000
2000
UG2D-E3/73
0.404
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
100
3.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
Lead Temperature
TL
2.5
2.0
1.5
1.0
0.5
0
T
L = 75 °C
8.3 ms Single Half Sine-Wave
10
T
A
, Ambient Temperature
P.C.B. Mounted on
0.5 x 0.5" (12.0 x 12.0 mm)
Copper Pad Areas
1
0
25
50
75
100
125
150
175
1
10
100
Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curves
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 88761
16-May-06
UG2A thru UG2D
Vishay General Semiconductor
100
10
60
50
40
30
20
trr
IF = 2.0 A
Qrr
VR
= 30 V
di/dt = 150 A/µs
di/dt = 100 A/µs
TJ = 150 °C
di/dt = 20 A/µs
di/dt = 50 A/µs
di/dt = 100 A/µs
di/dt = 150 A/µs
di/dt = 50 A/µs
1
0.1
TJ = 125 °C
TJ = 100 °C
di/dt = 20 A/µs
10
0
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
25
50
75
100
125
150
175
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Charateristics
10000
100
T
J
= 25 °C
f = 1.0 MHz
sig = 50 mVp-p
V
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
1
TJ = 25 °C
1
0.1
0.1
0
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88761
16-May-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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