HE8550L-E-AB3-B [UTC]

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR; 低压大电流小信号PNP晶体管
HE8550L-E-AB3-B
型号: HE8550L-E-AB3-B
厂家: Unisonic Technologies    Unisonic Technologies
描述:

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
低压大电流小信号PNP晶体管

晶体 晶体管
文件: 总4页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
HE8550  
PNP SILICON TRANSISTOR  
LOW VOLTAGE HIGH  
CURRENT SMALL SIGNAL PNP  
TRANSISTOR  
3
1
SOT-89  
1
1
2
SOT-23  
DESCRIPTION  
The UTC HE8550 is a low voltage high current small signal PNP  
transistor, designed for Class B push-pull 2W audio amplifier for  
portable radio and general purpose applications.  
TO-92  
FEATURES  
1
* Collector current up to 1.5A  
TO-92NL  
* Collector-Emitter voltage up to 25 V  
* Complimentary to UTC HE8050  
*Pb-free plating product number: HE8550L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
B
E
E
E
E
E
E
2
C
B
C
C
C
C
C
3
E
C
B
B
B
B
B
HE8550-x-AB3-R  
HE8550-x-AE3-R  
HE8550-x-T92-B  
HE8550-x-T92-K  
HE8550-x-T9N-B  
HE8550-x-T9N-K  
HE8550-x-T9N-R  
HE8550L-x-AB3-R  
HE8550L-x-AE3-R  
HE8550L-x-T92-B  
HE8550L-x-T92-K  
HE8550L-x-T9N-B  
HE8550L-x-T9N-K  
HE8550L-x-T9N-R  
SOT-89  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
TO-92  
TO-92NL  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
Tape Reel  
HE8550L-x-AE3-R  
(1) B: Tape Box, K: Bulk, R: Tape Reel  
(1)Packing Type  
(2) AB3: SOT-89, AE3: SOT-23, T92: TO-92,  
T9N: TO-92NL  
(2)Package Type  
(3)Rank  
(3) x: refer to Classification of h  
FE2  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
MARKING(For SOT-23 Package)  
BA  
www.unisonic.com.tw  
1 of 4  
Copyright © 2005 Unisonic Technologies Co., Ltd  
QW-R206-031,B  
HE8550  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
V
Collector-Base Voltage  
-40  
-25  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
V
VEBO  
-6  
V
SOT-23  
SOT-89  
350  
mW  
W
Collector Dissipation (Ta=25  
)  
PC  
0.5  
TO-92/TO-92NL  
1
W
Collector Current  
IC  
-1.5  
A
Junction Temperature  
TJ  
+150  
-40 ~ +150  
-65 ~ +150  
Operating Ambient Temperature  
Storage Temperature  
TOPR  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25  
PARAMETER SYMBOL TEST CONDITIONS  
Collector-Base Breakdown Voltage BVCBO IC=-100 A, IE=0  
Collector-Emitter Breakdown Voltage BVCEO IC=-2mA, IB=0  
, unless otherwise specified)  
MIN  
-40  
-25  
-6  
TYP  
MAX  
UNIT  
V
µ
V
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
BVEBO IE=-100  
µ
A, IC=0  
V
ICBO  
IEBO  
hFE1  
hFE2  
hFE3  
VCB=-35V, IE=0  
-100  
-100  
nA  
nA  
VEB=-6V, IC=0  
VCE=-1V, IC=-5mA  
VCE=-1V, IC=-100mA  
VCE=-1V, IC=-800mA  
45  
85  
40  
170  
160  
80  
DC Current Gain  
500  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(SAT) IC=-800mA, IB=-80mA  
-0.28  
-0.98  
-0.66  
190  
9.0  
-0.5  
-1.2  
-1.0  
V
V
VBE(SAT  
VBE  
fT  
)
IC=-800mA, IB=-80mA  
VCE=-1V,IC=-10mA  
V
Current Gain Bandwidth Product  
Output Capacitance  
VCE=-10V,IC=-50mA  
VCB=-10V, IE=0 f=1MHz  
100  
MHz  
pF  
Cob  
CLASSIFICATION OF hFE2  
RANK  
C
D
E
RANGE  
120-200  
160-300  
250-500  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-031,B  
www.unisonic.com.tw  
HE8550  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristics  
DC Current Gain  
VCE=-1V  
103  
102  
-0.5  
-0.4  
IB=-3.0mA  
-0.3  
-0.2  
IB=-2.5mA  
IB=-2.0mA  
IB=-1.5mA  
101  
100  
IB=-1.0mA  
-0.1  
0
IB=-0.5mA  
-10-1  
-100  
-101  
-102  
-103  
-0  
-0.4  
-0.8 -1.2 -1.6 -2.0  
Collector-Emitter Voltage ( V)  
Collector Current, IC (mA)  
Base-Emitter on Voltage  
VCE=-1V  
Saturation Voltage  
IC=10*IB  
-103  
-102  
-104  
-103  
VBE(SAT)  
-101  
-100  
-102  
-101  
VCE(SAT)  
-10-1  
-100  
-101  
-102  
-103  
0
-0.2 -0.4  
-0.6  
-0.8 -1.0  
Collector Curren,t IC (mA)  
Base-Emitter Voltage (V)  
Current Gain-Bandwidth Product  
VCE=-10V  
Collector Output Capacitance  
f=1MHz  
103  
102  
103  
102  
IE=0  
101  
100  
101  
100  
-100  
-101  
-102  
-103  
-100  
-101  
-102  
-103  
Collector Current, IC (mA)  
Collector-Base Voltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-031,B  
www.unisonic.com.tw  
HE8550  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-031,B  
www.unisonic.com.tw  

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