HE8051G-E-T92-B [UTC]
Small Signal Bipolar Transistor, 1.5A I(C), NPN;
| 型号： | HE8051G-E-T92-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 1.5A I(C), NPN 放大器 晶体管 |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
HE8051
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC HE8051 is a low voltage high current small signal NPN
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
1
TO-92
FEATURES
* Collector current up to 1.5A
* Collector-Emitter voltage up to 25 V
* complimentary to UTC HE8551
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
2
B
B
3
C
C
HE8051L-x-T92-B
HE8051L-x-T92-K
HE8051G-x-T92-B
HE8051G-x-T92-K
TO-92
TO-92
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R201-046.C
HE8051
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (TA=25°C)
Collector Current
40
25
V
6
1
V
W
A
IC
1.5
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=100μA, IE=0
IC=2mA, IB=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
40
25
6
V
V
IE=100μA, IC=0
VCB=35V, IE=0
V
100
100
nA
nA
Emitter Cut-Off Current
IEBO
VEB=6V, IC=0
hFE1
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
45
85
40
135
160
110
DC Current Gain
hFE2
500
hFE3
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT)
VBE(SAT)
VBE
0.5
1.2
1.0
V
V
V
Current Gain Bandwidth Product
Output Capacitance
fT
100
MHz
pF
Cob
9.0
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
250-500
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R201-046.C
HE8051
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R201-046.C
HE8051
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-046.C
www.unisonic.com.tw
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