HE8051S [HSMC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | HE8051S |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6111
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2002.03.06
Page No. : 1/4
MICROELECTRONICS CORP.
HE8051S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8051S is designed for general purpose amplifier applications.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
25
20
5
-
-
-
-
100
-
150
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
nA
V
IC=10uA
IC=1mA
IE=10uA
VCB=20V
VEB=6V
IC=0.5A, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=1V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz, IE=0
1
IEBO
100
0.5
1
500
-
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
V
140
-
-
-
10
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
C
C1
D
D1
E
hFE1
hFE2
100-180
-
100-180
>100
160-300
-
160-300
>100
250-500
-
HE8051S
HSMC Product Specification
Spec. No. : HE6111
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2002.03.06
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
100
10
CE(sat)
C
B
V
@ I =10I
125oC
75oC
75oC
25oC
125oC
25oC
CE
hFE @ V =1V
1
100
0.1
1
10
Collector Current-I (mA)
100
1000
1
10
100
1000
C
C
Collector Current-I (mA)
ON Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
1000
100
10
1
25oC
75oC
125oC
Cob
BE(ON)
V
CE
@ V =1V
100
0.1
1
10
100
0.1
1
10
Collector Current-I (mA)
100
1000
C
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
Safe Operating Area
1000
10000
1000
100
10
PT=1ms
PT=100ms
CE
V
=10V
PT=1s
100
10
1
1
10
100
1000
1
10
Forward Voltage-V (V)
100
CE
Collector Current (mA)
HE8051S
HSMC Product Specification
Spec. No. : HE6111
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2002.03.06
Page No. : 3/4
MICROELECTRONICS CORP.
PD-Ta
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature-Ta (oC)
HE8051S
HSMC Product Specification
Spec. No. : HE6111
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2002.03.06
Page No. : 4/4
MICROELECTRONICS CORP.
TO-92 Dimension
α2
α3
Marking:
A
H
E
8 0 5 1 S
B
C
Rank
1
2
3
Date Code
Control Code
Style: Pin 1.Emitter 2.Base 3.Collector
D
H
G
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Millimeters
DIM
Inches
Min. Max.
0.0142 0.0220
Millimeters
DIM
Min.
Max.
Min.
4.33
4.33
12.70
0.36
-
Max.
4.83
4.83
-
Min.
0.36
Max.
0.56
*2.54
*1.27
*5°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
G
H
I
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
-
0.56
*1.27
3.76
α1
α2
α3
-
*2°
*2°
*2°
3.36
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HE8051S
HSMC Product Specification
相关型号：
©2020 ICPDF网 联系我们和版权申明