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HE8051-D-T92-B [UTC]

Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN;
HE8051-D-T92-B
型号： HE8051-D-T92-B
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
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UNISONIC TECHNOLOGIES CO., LTD  
HE8051  
NPN SILICON TRANSISTOR  
LOW VOLTAGE HIGH CURRENT  
SMALL SIGNAL NPN  
TRANSISTOR  
ꢀ
DESCRIPTION  
The UTC HE8051 is a low voltage high current small signal NPN  
transistor, designed for Class B push-pull 2W audio amplifier for  
portable radio and general purpose applications.  
1
TO-92  
ꢀ
FEATURES  
* Collector current up to 1.5A  
* Collector-Emitter voltage up to 25 V  
* complimentary to UTC HE8551  
*Pb-free plating product number: HE8051L  
ꢀ
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
E
E
2
B
B
3
C
C
HE8051-x-T92-B  
HE8051-x-T92-K  
HE8051L-x-T92-B  
HE8051L-x-T92-K  
TO-92  
TO-92  
Tape Box  
Bulk  
HE8051L-x-T92-B  
(1)Packing Type  
(1) B: Tape Box, K: Bulk  
(2) T92: TO-92  
(2)Package Type  
(3)Rank  
(3) x: refer to Classification of h  
FE2  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2007 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R201-046.B  
HE8051  
NPN SILICON TRANSISTOR  
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
PC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Dissipation (Ta=25  
Collector Current  
25  
V
6
1
V
℃
C)  
W
A
IC  
1.5  
℃
℃
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25  
PARAMETER SYMBOL TEST CONDITIONS  
BVCBO IC=100 A, IE=0  
BVCEO IC=2mA, IB=0  
BVEBO IE=100 A, IC=0  
℃, unless otherwise specified)  
MIN  
40  
25  
6
TYP  
MAX  
UNIT  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
µ
V
µ
V
ICBO  
IEBO  
hFE1  
hFE2  
hFE3  
VCB=35V, IE=0  
100  
100  
nA  
nA  
Emitter Cut-Off Current  
VEB=6V, IC=0  
VCE=1V, IC=5mA  
VCE=1V, IC=100mA  
VCE=1V, IC=800mA  
45  
85  
40  
135  
160  
110  
500  
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(SAT) IC=800mA, IB=80mA  
VBE(SAT) IC=800mA, IB=80mA  
0.5  
1.2  
1.0  
V
V
VBE  
fT  
VCE=1V, IC=10mA  
V
Current Gain Bandwidth Product  
Output Capacitance  
VCE=10V, IC=50mA  
VCB=10V, IE=0, f=1MHz  
100  
MHz  
pF  
Cob  
9.0  
ꢀ
CLASSIFICATION OF hFE2  
RANK  
C
D
E
RANGE  
120-200  
160-300  
250-500  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R201-046.B  
HE8051  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS  
Fig. 2 DC Current Gain  
Fig. 1 Static Characteristics  
IB=3.0mA  
103  
102  
101  
100  
0.5  
0.4  
IB=2.5mA  
IB=2.0mA  
VCE=1V  
0.3  
0.2  
IB=1.5mA  
IB=1.0mA  
IB=0.5mA  
0.1  
0
10-1  
100  
101  
102  
103  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Collector Current, IC (mA)  
Collector-Emitter Voltage, VCE ( V)  
Fig. 3 Base-Emitter On Voltage  
VCE=1V  
Fig. 4 Saturation Voltage  
IC=10·IB  
104  
103  
102  
VBE(SAT)  
103  
102  
101  
101  
100  
VCE(SAT)  
10-1  
100  
Collector Current, IC (mA)  
101  
102  
103  
0.2 0.4  
0.6 0.8  
1.0  
1.2  
Base-Emitter Voltage, VBE (V)  
Fig. 5 Current Gain-Bandwidth Product  
103  
Fig. 6 Collector Output Capacitance  
103  
102  
VCE=10V  
102  
101  
f=1MHz  
IE=0  
101  
100  
100  
100  
101  
102  
103  
100  
101  
102  
103  
Collector-Base Voltage, VCB (V)  
Collector Current, IC (mA)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R201-046.B  
www.unisonic.com.tw  
HE8051  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R201-046.B  
www.unisonic.com.tw  

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